CN1475030A - 集成电路电感器结构以及非破坏性蚀刻深度测量 - Google Patents
集成电路电感器结构以及非破坏性蚀刻深度测量 Download PDFInfo
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- CN1475030A CN1475030A CNA018186548A CN01818654A CN1475030A CN 1475030 A CN1475030 A CN 1475030A CN A018186548 A CNA018186548 A CN A018186548A CN 01818654 A CN01818654 A CN 01818654A CN 1475030 A CN1475030 A CN 1475030A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
- H01F41/04—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
- H01F41/041—Printed circuit coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/10—Inductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (34)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE0004095A SE519893C2 (sv) | 2000-11-09 | 2000-11-09 | Induktorstruktur hos integrerad krets samt icke-förstörande mätning av etsningsdjup |
SE00040956 | 2000-11-09 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1475030A true CN1475030A (zh) | 2004-02-11 |
CN1293616C CN1293616C (zh) | 2007-01-03 |
Family
ID=20281752
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN01818654.8A Expired - Fee Related CN1293616C (zh) | 2000-11-09 | 2001-11-05 | 电子装置结构及其形成方法、蚀刻及测量蚀刻深度的方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6720229B2 (zh) |
EP (1) | EP1332518A1 (zh) |
CN (1) | CN1293616C (zh) |
AU (1) | AU2002212920A1 (zh) |
SE (1) | SE519893C2 (zh) |
TW (1) | TW508820B (zh) |
WO (1) | WO2002039497A1 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101908535A (zh) * | 2010-06-11 | 2010-12-08 | 上海宏力半导体制造有限公司 | 集成电感及其制造方法 |
TWI452644B (zh) * | 2011-05-17 | 2014-09-11 | Univ Nat Yunlin Sci & Tech | 蝕刻深度量測方法及其裝置 |
CN107037350A (zh) * | 2015-09-23 | 2017-08-11 | 格罗方德半导体公司 | 具有监控链及测试导线的集成电路测试结构 |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7193535B2 (en) * | 1999-09-15 | 2007-03-20 | Michael Shipman | Illuminated keyboard |
EP1130631A1 (en) * | 2000-02-29 | 2001-09-05 | STMicroelectronics S.r.l. | Process for forming a buried cavity in a semiconductor material wafer |
JP2002110908A (ja) * | 2000-09-28 | 2002-04-12 | Toshiba Corp | スパイラルインダクタおよびこれを備える半導体集積回路装置の製造方法 |
US20040195650A1 (en) * | 2003-04-04 | 2004-10-07 | Tsung-Ju Yang | High-Q inductor device with a shielding pattern embedded in a substrate |
US7001846B2 (en) * | 2003-05-20 | 2006-02-21 | Sharp Laboratories Of America, Inc. | High-density SOI cross-point memory array and method for fabricating same |
DE102004022139B4 (de) * | 2004-05-05 | 2007-10-18 | Atmel Germany Gmbh | Verfahren zur Herstellung einer Spiralinduktivität auf einem Substrat und nach einem derartigen Verfahren hergestelltes Bauelement |
KR100615711B1 (ko) * | 2005-01-25 | 2006-08-25 | 삼성전자주식회사 | 필름 벌크 어쿠스틱 공진기를 이용한 대역 필터 및 그제조방법. |
US7425485B2 (en) * | 2005-09-30 | 2008-09-16 | Freescale Semiconductor, Inc. | Method for forming microelectronic assembly |
US7795045B2 (en) * | 2008-02-13 | 2010-09-14 | Icemos Technology Ltd. | Trench depth monitor for semiconductor manufacturing |
KR101015525B1 (ko) * | 2008-08-18 | 2011-02-16 | 주식회사 동부하이텍 | 인덕터의 금속 배선 형성 방법 |
US7904273B2 (en) * | 2009-02-16 | 2011-03-08 | International Business Machines Corporation | In-line depth measurement for thru silicon via |
US8232115B2 (en) | 2009-09-25 | 2012-07-31 | International Business Machines Corporation | Test structure for determination of TSV depth |
CN102087995A (zh) * | 2009-12-04 | 2011-06-08 | 中芯国际集成电路制造(上海)有限公司 | 集成电路电感及其制作方法 |
US9431473B2 (en) | 2012-11-21 | 2016-08-30 | Qualcomm Incorporated | Hybrid transformer structure on semiconductor devices |
US10002700B2 (en) | 2013-02-27 | 2018-06-19 | Qualcomm Incorporated | Vertical-coupling transformer with an air-gap structure |
US9634645B2 (en) | 2013-03-14 | 2017-04-25 | Qualcomm Incorporated | Integration of a replica circuit and a transformer above a dielectric substrate |
US9059051B2 (en) | 2013-05-08 | 2015-06-16 | International Business Machines Corporation | Inline measurement of through-silicon via depth |
US9449753B2 (en) * | 2013-08-30 | 2016-09-20 | Qualcomm Incorporated | Varying thickness inductor |
US9208938B2 (en) * | 2013-10-02 | 2015-12-08 | Globalfoundries Inc. | Inductor structure having embedded airgap |
US9355972B2 (en) | 2014-03-04 | 2016-05-31 | International Business Machines Corporation | Method for making a dielectric region in a bulk silicon substrate providing a high-Q passive resonator |
US9906318B2 (en) | 2014-04-18 | 2018-02-27 | Qualcomm Incorporated | Frequency multiplexer |
US9607847B1 (en) * | 2015-12-18 | 2017-03-28 | Texas Instruments Incorporated | Enhanced lateral cavity etch |
US10461152B2 (en) | 2017-07-10 | 2019-10-29 | Globalfoundries Inc. | Radio frequency switches with air gap structures |
US10833153B2 (en) | 2017-09-13 | 2020-11-10 | Globalfoundries Inc. | Switch with local silicon on insulator (SOI) and deep trench isolation |
US10446643B2 (en) | 2018-01-22 | 2019-10-15 | Globalfoundries Inc. | Sealed cavity structures with a planar surface |
US11410872B2 (en) | 2018-11-30 | 2022-08-09 | Globalfoundries U.S. Inc. | Oxidized cavity structures within and under semiconductor devices |
US10923577B2 (en) | 2019-01-07 | 2021-02-16 | Globalfoundries U.S. Inc. | Cavity structures under shallow trench isolation regions |
US11127816B2 (en) | 2020-02-14 | 2021-09-21 | Globalfoundries U.S. Inc. | Heterojunction bipolar transistors with one or more sealed airgap |
EP4093163A1 (en) * | 2021-05-18 | 2022-11-23 | AT & S Austria Technologie & Systemtechnik Aktiengesellschaft | Component carrier with inductive element included in layer build-up, and manufacturing method |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0677407A (ja) | 1992-04-06 | 1994-03-18 | Nippon Precision Circuits Kk | 半導体装置 |
WO1994017558A1 (en) | 1993-01-29 | 1994-08-04 | The Regents Of The University Of California | Monolithic passive component |
US5773870A (en) | 1996-09-10 | 1998-06-30 | National Science Council | Membrane type integrated inductor and the process thereof |
US5844299A (en) * | 1997-01-31 | 1998-12-01 | National Semiconductor Corporation | Integrated inductor |
EP0915513A1 (en) * | 1997-10-23 | 1999-05-12 | STMicroelectronics S.r.l. | High quality factor, integrated inductor and production method thereof |
US5930637A (en) | 1997-10-31 | 1999-07-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of fabricating a microwave inductor |
TW363278B (en) * | 1998-01-16 | 1999-07-01 | Winbond Electronics Corp | Preparation method for semiconductor to increase the inductive resonance frequency and Q value |
US6025261A (en) | 1998-04-29 | 2000-02-15 | Micron Technology, Inc. | Method for making high-Q inductive elements |
EP0971412B1 (en) | 1998-07-10 | 2013-03-13 | Kabushiki Kaisha Toyota Jidoshokki | Power Semiconductor with Attachable Protection Circuit |
KR20000011585A (ko) * | 1998-07-28 | 2000-02-25 | 윤덕용 | 반도체소자및그제조방법 |
US6287931B1 (en) * | 1998-12-04 | 2001-09-11 | Winbond Electronics Corp. | Method of fabricating on-chip inductor |
US6511859B1 (en) * | 1999-03-12 | 2003-01-28 | California Institute Of Technology | IC-compatible parylene MEMS technology and its application in integrated sensors |
DE69930099T2 (de) * | 1999-04-09 | 2006-08-31 | Stmicroelectronics S.R.L., Agrate Brianza | Herstellung von vergrabenen Hohlräumen in einer einkristallinen Halbleiterscheibe und Halbleiterscheibe |
US6140197A (en) * | 1999-08-30 | 2000-10-31 | Chartered Semiconductor Manufacturing Ltd. | Method of making spiral-type RF inductors having a high quality factor (Q) |
-
2000
- 2000-11-09 SE SE0004095A patent/SE519893C2/sv not_active IP Right Cessation
- 2000-12-26 TW TW089127874A patent/TW508820B/zh not_active IP Right Cessation
-
2001
- 2001-11-05 WO PCT/SE2001/002426 patent/WO2002039497A1/en not_active Application Discontinuation
- 2001-11-05 EP EP01981264A patent/EP1332518A1/en not_active Withdrawn
- 2001-11-05 AU AU2002212920A patent/AU2002212920A1/en not_active Abandoned
- 2001-11-05 CN CN01818654.8A patent/CN1293616C/zh not_active Expired - Fee Related
- 2001-11-08 US US09/986,394 patent/US6720229B2/en not_active Expired - Lifetime
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101908535A (zh) * | 2010-06-11 | 2010-12-08 | 上海宏力半导体制造有限公司 | 集成电感及其制造方法 |
TWI452644B (zh) * | 2011-05-17 | 2014-09-11 | Univ Nat Yunlin Sci & Tech | 蝕刻深度量測方法及其裝置 |
CN107037350A (zh) * | 2015-09-23 | 2017-08-11 | 格罗方德半导体公司 | 具有监控链及测试导线的集成电路测试结构 |
CN107037350B (zh) * | 2015-09-23 | 2019-10-01 | 格罗方德半导体公司 | 具有监控链及测试导线的集成电路测试结构 |
Also Published As
Publication number | Publication date |
---|---|
SE0004095L (sv) | 2002-05-10 |
US20020057176A1 (en) | 2002-05-16 |
WO2002039497A1 (en) | 2002-05-16 |
SE519893C2 (sv) | 2003-04-22 |
CN1293616C (zh) | 2007-01-03 |
EP1332518A1 (en) | 2003-08-06 |
TW508820B (en) | 2002-11-01 |
US6720229B2 (en) | 2004-04-13 |
AU2002212920A1 (en) | 2002-05-21 |
SE0004095D0 (sv) | 2000-11-09 |
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