AU2002212920A1 - Integrated circuit inductor structure and non-destructive etch depth measurement - Google Patents

Integrated circuit inductor structure and non-destructive etch depth measurement

Info

Publication number
AU2002212920A1
AU2002212920A1 AU2002212920A AU1292002A AU2002212920A1 AU 2002212920 A1 AU2002212920 A1 AU 2002212920A1 AU 2002212920 A AU2002212920 A AU 2002212920A AU 1292002 A AU1292002 A AU 1292002A AU 2002212920 A1 AU2002212920 A1 AU 2002212920A1
Authority
AU
Australia
Prior art keywords
destructive
integrated circuit
depth measurement
etch depth
inductor structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002212920A
Inventor
Carl Bjormander
Ted Johansson
Hans Norstrom
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefonaktiebolaget LM Ericsson AB
Original Assignee
Telefonaktiebolaget LM Ericsson AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefonaktiebolaget LM Ericsson AB filed Critical Telefonaktiebolaget LM Ericsson AB
Publication of AU2002212920A1 publication Critical patent/AU2002212920A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
    • H01F41/04—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
    • H01F41/041—Printed circuit coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/10—Inductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type 
    • H01F17/0006—Printed inductances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
AU2002212920A 2000-11-09 2001-11-05 Integrated circuit inductor structure and non-destructive etch depth measurement Abandoned AU2002212920A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
SE0004095A SE519893C2 (en) 2000-11-09 2000-11-09 Inductor structure of integrated circuit and non-destructive measurement of etching depth
SE0004095 2000-11-09
PCT/SE2001/002426 WO2002039497A1 (en) 2000-11-09 2001-11-05 Integrated circuit inductor structure and non-destructive etch depth measurement

Publications (1)

Publication Number Publication Date
AU2002212920A1 true AU2002212920A1 (en) 2002-05-21

Family

ID=20281752

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002212920A Abandoned AU2002212920A1 (en) 2000-11-09 2001-11-05 Integrated circuit inductor structure and non-destructive etch depth measurement

Country Status (7)

Country Link
US (1) US6720229B2 (en)
EP (1) EP1332518A1 (en)
CN (1) CN1293616C (en)
AU (1) AU2002212920A1 (en)
SE (1) SE519893C2 (en)
TW (1) TW508820B (en)
WO (1) WO2002039497A1 (en)

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US7193535B2 (en) * 1999-09-15 2007-03-20 Michael Shipman Illuminated keyboard
EP1130631A1 (en) * 2000-02-29 2001-09-05 STMicroelectronics S.r.l. Process for forming a buried cavity in a semiconductor material wafer
JP2002110908A (en) * 2000-09-28 2002-04-12 Toshiba Corp Spiral inductor and method for manufacturing semiconductor integrated circuit device having the same
US20040195650A1 (en) * 2003-04-04 2004-10-07 Tsung-Ju Yang High-Q inductor device with a shielding pattern embedded in a substrate
US7001846B2 (en) * 2003-05-20 2006-02-21 Sharp Laboratories Of America, Inc. High-density SOI cross-point memory array and method for fabricating same
DE102004022139B4 (en) * 2004-05-05 2007-10-18 Atmel Germany Gmbh A method for producing a spiral inductance on a substrate and a device produced by such a method
KR100615711B1 (en) * 2005-01-25 2006-08-25 삼성전자주식회사 Filter using the film bulk acoustic resonator and method of the same.
US7425485B2 (en) * 2005-09-30 2008-09-16 Freescale Semiconductor, Inc. Method for forming microelectronic assembly
US7795045B2 (en) * 2008-02-13 2010-09-14 Icemos Technology Ltd. Trench depth monitor for semiconductor manufacturing
KR101015525B1 (en) * 2008-08-18 2011-02-16 주식회사 동부하이텍 method for forming metal line of inductor
US7904273B2 (en) * 2009-02-16 2011-03-08 International Business Machines Corporation In-line depth measurement for thru silicon via
US8232115B2 (en) * 2009-09-25 2012-07-31 International Business Machines Corporation Test structure for determination of TSV depth
CN102087995A (en) * 2009-12-04 2011-06-08 中芯国际集成电路制造(上海)有限公司 Integrated circuit inductor and manufacturing method thereof
CN101908535A (en) * 2010-06-11 2010-12-08 上海宏力半导体制造有限公司 Integrated inductor and manufacturing method thereof
TWI452644B (en) * 2011-05-17 2014-09-11 Univ Nat Yunlin Sci & Tech Method and apparatus for measuring etching depth
US9431473B2 (en) 2012-11-21 2016-08-30 Qualcomm Incorporated Hybrid transformer structure on semiconductor devices
US10002700B2 (en) 2013-02-27 2018-06-19 Qualcomm Incorporated Vertical-coupling transformer with an air-gap structure
US9634645B2 (en) 2013-03-14 2017-04-25 Qualcomm Incorporated Integration of a replica circuit and a transformer above a dielectric substrate
US9059051B2 (en) 2013-05-08 2015-06-16 International Business Machines Corporation Inline measurement of through-silicon via depth
US9449753B2 (en) * 2013-08-30 2016-09-20 Qualcomm Incorporated Varying thickness inductor
US9208938B2 (en) * 2013-10-02 2015-12-08 Globalfoundries Inc. Inductor structure having embedded airgap
US9355972B2 (en) 2014-03-04 2016-05-31 International Business Machines Corporation Method for making a dielectric region in a bulk silicon substrate providing a high-Q passive resonator
US9906318B2 (en) 2014-04-18 2018-02-27 Qualcomm Incorporated Frequency multiplexer
US9435852B1 (en) * 2015-09-23 2016-09-06 GlobalFoundries, Inc. Integrated circuit (IC) test structure with monitor chain and test wires
US9607847B1 (en) * 2015-12-18 2017-03-28 Texas Instruments Incorporated Enhanced lateral cavity etch
US10461152B2 (en) 2017-07-10 2019-10-29 Globalfoundries Inc. Radio frequency switches with air gap structures
US10833153B2 (en) 2017-09-13 2020-11-10 Globalfoundries Inc. Switch with local silicon on insulator (SOI) and deep trench isolation
US10446643B2 (en) 2018-01-22 2019-10-15 Globalfoundries Inc. Sealed cavity structures with a planar surface
US11410872B2 (en) 2018-11-30 2022-08-09 Globalfoundries U.S. Inc. Oxidized cavity structures within and under semiconductor devices
US10923577B2 (en) 2019-01-07 2021-02-16 Globalfoundries U.S. Inc. Cavity structures under shallow trench isolation regions
US11127816B2 (en) 2020-02-14 2021-09-21 Globalfoundries U.S. Inc. Heterojunction bipolar transistors with one or more sealed airgap

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0677407A (en) 1992-04-06 1994-03-18 Nippon Precision Circuits Kk Semiconductor device
WO1994017558A1 (en) 1993-01-29 1994-08-04 The Regents Of The University Of California Monolithic passive component
US5773870A (en) 1996-09-10 1998-06-30 National Science Council Membrane type integrated inductor and the process thereof
US5844299A (en) * 1997-01-31 1998-12-01 National Semiconductor Corporation Integrated inductor
EP0915513A1 (en) * 1997-10-23 1999-05-12 STMicroelectronics S.r.l. High quality factor, integrated inductor and production method thereof
US5930637A (en) 1997-10-31 1999-07-27 Taiwan Semiconductor Manufacturing Co., Ltd. Method of fabricating a microwave inductor
TW363278B (en) * 1998-01-16 1999-07-01 Winbond Electronics Corp Preparation method for semiconductor to increase the inductive resonance frequency and Q value
US6025261A (en) 1998-04-29 2000-02-15 Micron Technology, Inc. Method for making high-Q inductive elements
US6232654B1 (en) 1998-07-10 2001-05-15 Kabushiki Kaisha Toyoda Jidoshokki Seisakusho Semiconductor module
KR20000011585A (en) * 1998-07-28 2000-02-25 윤덕용 Semiconductor device and method for manufacturing the same
US6287931B1 (en) * 1998-12-04 2001-09-11 Winbond Electronics Corp. Method of fabricating on-chip inductor
WO2000054312A1 (en) * 1999-03-12 2000-09-14 California Institute Of Technology Ic-compatible parylene mems technology and its application in integrated sensors
DE69930099T2 (en) * 1999-04-09 2006-08-31 Stmicroelectronics S.R.L., Agrate Brianza Production of buried cavities in a monocrystalline semiconductor wafer and semiconductor wafer
US6140197A (en) * 1999-08-30 2000-10-31 Chartered Semiconductor Manufacturing Ltd. Method of making spiral-type RF inductors having a high quality factor (Q)

Also Published As

Publication number Publication date
SE0004095L (en) 2002-05-10
SE0004095D0 (en) 2000-11-09
US6720229B2 (en) 2004-04-13
WO2002039497A1 (en) 2002-05-16
CN1475030A (en) 2004-02-11
TW508820B (en) 2002-11-01
CN1293616C (en) 2007-01-03
SE519893C2 (en) 2003-04-22
US20020057176A1 (en) 2002-05-16
EP1332518A1 (en) 2003-08-06

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