AU2001263688A1 - Multiple match detection circuit and method - Google Patents

Multiple match detection circuit and method

Info

Publication number
AU2001263688A1
AU2001263688A1 AU2001263688A AU6368801A AU2001263688A1 AU 2001263688 A1 AU2001263688 A1 AU 2001263688A1 AU 2001263688 A AU2001263688 A AU 2001263688A AU 6368801 A AU6368801 A AU 6368801A AU 2001263688 A1 AU2001263688 A1 AU 2001263688A1
Authority
AU
Australia
Prior art keywords
detection circuit
match detection
multiple match
circuit
match
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001263688A
Inventor
Peter P. Ma
Stanley Jeh-Chun Ma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mosaid Technologies Inc
Original Assignee
Mosaid Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mosaid Technologies Inc filed Critical Mosaid Technologies Inc
Publication of AU2001263688A1 publication Critical patent/AU2001263688A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
    • G11C15/043—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements using capacitive charge storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
    • G11C15/046—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements using non-volatile storage elements
AU2001263688A 2000-05-31 2001-05-31 Multiple match detection circuit and method Abandoned AU2001263688A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CA2310295A CA2310295C (en) 2000-05-31 2000-05-31 Multiple match detection circuit and method
CA2310295 2000-05-31
PCT/CA2001/000797 WO2001093274A1 (en) 2000-05-31 2001-05-31 Multiple match detection circuit and method

Publications (1)

Publication Number Publication Date
AU2001263688A1 true AU2001263688A1 (en) 2001-12-11

Family

ID=4166343

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001263688A Abandoned AU2001263688A1 (en) 2000-05-31 2001-05-31 Multiple match detection circuit and method

Country Status (8)

Country Link
US (3) US6990001B2 (en)
KR (1) KR100810778B1 (en)
CN (1) CN1296938C (en)
AU (1) AU2001263688A1 (en)
CA (1) CA2310295C (en)
DE (1) DE10196292T1 (en)
GB (1) GB2379545B (en)
WO (1) WO2001093274A1 (en)

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US10229746B2 (en) 2010-08-20 2019-03-12 Attopsemi Technology Co., Ltd OTP memory with high data security
US9460807B2 (en) 2010-08-20 2016-10-04 Shine C. Chung One-time programmable memory devices using FinFET technology
US9496033B2 (en) 2010-08-20 2016-11-15 Attopsemi Technology Co., Ltd Method and system of programmable resistive devices with read capability using a low supply voltage
US9070437B2 (en) 2010-08-20 2015-06-30 Shine C. Chung Circuit and system of using junction diode as program selector for one-time programmable devices with heat sink
US8923085B2 (en) 2010-11-03 2014-12-30 Shine C. Chung Low-pin-count non-volatile memory embedded in a integrated circuit without any additional pins for access
US9019791B2 (en) 2010-11-03 2015-04-28 Shine C. Chung Low-pin-count non-volatile memory interface for 3D IC
US8988965B2 (en) 2010-11-03 2015-03-24 Shine C. Chung Low-pin-count non-volatile memory interface
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US10586832B2 (en) 2011-02-14 2020-03-10 Attopsemi Technology Co., Ltd One-time programmable devices using gate-all-around structures
US8848423B2 (en) 2011-02-14 2014-09-30 Shine C. Chung Circuit and system of using FinFET for building programmable resistive devices
US10192615B2 (en) 2011-02-14 2019-01-29 Attopsemi Technology Co., Ltd One-time programmable devices having a semiconductor fin structure with a divided active region
US9324849B2 (en) 2011-11-15 2016-04-26 Shine C. Chung Structures and techniques for using semiconductor body to construct SCR, DIAC, or TRIAC
US9136261B2 (en) 2011-11-15 2015-09-15 Shine C. Chung Structures and techniques for using mesh-structure diodes for electro-static discharge (ESD) protection
US9076526B2 (en) * 2012-09-10 2015-07-07 Shine C. Chung OTP memories functioning as an MTP memory
US9183897B2 (en) 2012-09-30 2015-11-10 Shine C. Chung Circuits and methods of a self-timed high speed SRAM
US9165650B2 (en) * 2013-02-07 2015-10-20 Qualcomm Incorporated Hybrid dynamic-static encoder with optional hit and/or multi-hit detection
US9412473B2 (en) 2014-06-16 2016-08-09 Shine C. Chung System and method of a novel redundancy scheme for OTP
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US9264021B1 (en) 2014-08-29 2016-02-16 Freescale Semiconductor, Inc. Multi-bit flip-flop with enhanced fault detection
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US9704575B1 (en) 2016-01-07 2017-07-11 Globalfoundries Inc. Content-addressable memory having multiple reference matchlines to reduce latency
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US10726914B2 (en) 2017-04-14 2020-07-28 Attopsemi Technology Co. Ltd Programmable resistive memories with low power read operation and novel sensing scheme
US11615859B2 (en) 2017-04-14 2023-03-28 Attopsemi Technology Co., Ltd One-time programmable memories with ultra-low power read operation and novel sensing scheme
US10535413B2 (en) 2017-04-14 2020-01-14 Attopsemi Technology Co., Ltd Low power read operation for programmable resistive memories
CN107508464A (en) * 2017-08-28 2017-12-22 东莞市长工微电子有限公司 A kind of current feedback unilateral hysteresis controls COT power management chip control circuits
US10770160B2 (en) 2017-11-30 2020-09-08 Attopsemi Technology Co., Ltd Programmable resistive memory formed by bit slices from a standard cell library
CN110082593A (en) * 2018-01-25 2019-08-02 深圳市英特瑞半导体科技有限公司 A kind of Method for Phase Difference Measurement and phase measurement device
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Also Published As

Publication number Publication date
KR20030014256A (en) 2003-02-15
CA2310295C (en) 2010-10-05
US6990001B2 (en) 2006-01-24
GB2379545A (en) 2003-03-12
CN1296938C (en) 2007-01-24
US7095640B2 (en) 2006-08-22
US20060083042A1 (en) 2006-04-20
GB0229175D0 (en) 2003-01-22
DE10196292T1 (en) 2003-06-18
KR100810778B1 (en) 2008-03-07
GB2379545B (en) 2004-11-10
WO2001093274A1 (en) 2001-12-06
CN1444767A (en) 2003-09-24
CA2310295A1 (en) 2001-11-30
US20060256601A1 (en) 2006-11-16
US20040130924A1 (en) 2004-07-08
US7298637B2 (en) 2007-11-20
GB2379545A8 (en) 2004-03-08

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