CN1470596A - 含有碱土金属和iiib族金属的氧化物的荧光粉和光源 - Google Patents
含有碱土金属和iiib族金属的氧化物的荧光粉和光源 Download PDFInfo
- Publication number
- CN1470596A CN1470596A CNA031480519A CN03148051A CN1470596A CN 1470596 A CN1470596 A CN 1470596A CN A031480519 A CNA031480519 A CN A031480519A CN 03148051 A CN03148051 A CN 03148051A CN 1470596 A CN1470596 A CN 1470596A
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- Prior art keywords
- fluorescent material
- earth metal
- metal
- alkaline
- rare earth
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 49
- 239000002184 metal Substances 0.000 title claims abstract description 49
- 239000000843 powder Substances 0.000 title description 6
- 239000003513 alkali Substances 0.000 title 1
- 229910044991 metal oxide Inorganic materials 0.000 title 1
- 150000004706 metal oxides Chemical class 0.000 title 1
- 239000000203 mixture Substances 0.000 claims abstract description 77
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 45
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims abstract description 41
- 150000001342 alkaline earth metals Chemical class 0.000 claims abstract description 41
- 239000011575 calcium Substances 0.000 claims abstract description 34
- 229910052693 Europium Inorganic materials 0.000 claims abstract description 32
- 229910052712 strontium Inorganic materials 0.000 claims abstract description 30
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910052788 barium Inorganic materials 0.000 claims abstract description 28
- 229910052791 calcium Inorganic materials 0.000 claims abstract description 28
- -1 rare-earth metal ions Chemical class 0.000 claims abstract description 27
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 22
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 22
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 21
- 229910052738 indium Inorganic materials 0.000 claims abstract description 19
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 19
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims abstract description 18
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims abstract description 17
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 150000002500 ions Chemical class 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims description 116
- 150000001875 compounds Chemical class 0.000 claims description 43
- 238000000034 method Methods 0.000 claims description 42
- 150000002910 rare earth metals Chemical class 0.000 claims description 35
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 27
- 230000005855 radiation Effects 0.000 claims description 24
- 239000004411 aluminium Substances 0.000 claims description 21
- 239000012298 atmosphere Substances 0.000 claims description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- 239000007789 gas Substances 0.000 claims description 11
- 239000002245 particle Substances 0.000 claims description 11
- 239000011248 coating agent Substances 0.000 claims description 10
- 238000000576 coating method Methods 0.000 claims description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims description 9
- 239000001257 hydrogen Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 229910052799 carbon Inorganic materials 0.000 claims description 8
- 239000011777 magnesium Substances 0.000 claims description 8
- 230000005284 excitation Effects 0.000 claims description 7
- 229910052749 magnesium Inorganic materials 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims description 5
- 229910052684 Cerium Inorganic materials 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 5
- 229920000642 polymer Polymers 0.000 claims description 5
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 claims description 4
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 4
- 229910052691 Erbium Inorganic materials 0.000 claims description 4
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 4
- 229910052689 Holmium Inorganic materials 0.000 claims description 4
- 241001062009 Indigofera Species 0.000 claims description 4
- 229910052765 Lutetium Inorganic materials 0.000 claims description 4
- 229910002651 NO3 Inorganic materials 0.000 claims description 4
- 229910052779 Neodymium Inorganic materials 0.000 claims description 4
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 4
- 229910052772 Samarium Inorganic materials 0.000 claims description 4
- 229910052775 Thulium Inorganic materials 0.000 claims description 4
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 4
- 238000000149 argon plasma sintering Methods 0.000 claims description 4
- 238000001354 calcination Methods 0.000 claims description 4
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 claims description 4
- 230000005670 electromagnetic radiation Effects 0.000 claims description 4
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 claims description 4
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 claims description 4
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 claims description 4
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 claims description 4
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 4
- VLTRZXGMWDSKGL-UHFFFAOYSA-M perchlorate Inorganic materials [O-]Cl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-M 0.000 claims description 4
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 claims description 4
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 claims description 4
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 claims description 4
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 claims description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical group [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 3
- 239000000908 ammonium hydroxide Substances 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000007767 bonding agent Substances 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 3
- OTJFQRMIRKXXRS-UHFFFAOYSA-N (hydroxymethylamino)methanol Chemical compound OCNCO OTJFQRMIRKXXRS-UHFFFAOYSA-N 0.000 claims description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 claims description 2
- KGWDUNBJIMUFAP-KVVVOXFISA-N Ethanolamine Oleate Chemical compound NCCO.CCCCCCCC\C=C/CCCCCCCC(O)=O KGWDUNBJIMUFAP-KVVVOXFISA-N 0.000 claims description 2
- WUGQZFFCHPXWKQ-UHFFFAOYSA-N Propanolamine Chemical compound NCCCO WUGQZFFCHPXWKQ-UHFFFAOYSA-N 0.000 claims description 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 2
- ITBPIKUGMIZTJR-UHFFFAOYSA-N [bis(hydroxymethyl)amino]methanol Chemical compound OCN(CO)CO ITBPIKUGMIZTJR-UHFFFAOYSA-N 0.000 claims description 2
- 150000004703 alkoxides Chemical class 0.000 claims description 2
- 150000001412 amines Chemical class 0.000 claims description 2
- VBIXEXWLHSRNKB-UHFFFAOYSA-N ammonium oxalate Chemical compound [NH4+].[NH4+].[O-]C(=O)C([O-])=O VBIXEXWLHSRNKB-UHFFFAOYSA-N 0.000 claims description 2
- 125000003118 aryl group Chemical group 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 2
- 150000002148 esters Chemical class 0.000 claims description 2
- XMYQHJDBLRZMLW-UHFFFAOYSA-N methanolamine Chemical compound NCO XMYQHJDBLRZMLW-UHFFFAOYSA-N 0.000 claims description 2
- 150000003839 salts Chemical class 0.000 claims description 2
- LSNNMFCWUKXFEE-UHFFFAOYSA-L sulfite Chemical compound [O-]S([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-L 0.000 claims description 2
- 229960004418 trolamine Drugs 0.000 claims description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 3
- 235000000177 Indigofera tinctoria Nutrition 0.000 claims 2
- 125000004432 carbon atom Chemical group C* 0.000 claims 2
- 229940097275 indigo Drugs 0.000 claims 2
- COHYTHOBJLSHDF-UHFFFAOYSA-N indigo powder Natural products N1C2=CC=CC=C2C(=O)C1=C1C(=O)C2=CC=CC=C2N1 COHYTHOBJLSHDF-UHFFFAOYSA-N 0.000 claims 2
- 230000003287 optical effect Effects 0.000 claims 2
- 239000012780 transparent material Substances 0.000 claims 2
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 claims 1
- 238000009877 rendering Methods 0.000 abstract 1
- 238000001228 spectrum Methods 0.000 description 7
- 239000000243 solution Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 4
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
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- 150000001721 carbon Chemical group 0.000 description 3
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- 230000003595 spectral effect Effects 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000003081 coactivator Effects 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 229910052743 krypton Inorganic materials 0.000 description 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 2
- 229910052754 neon Inorganic materials 0.000 description 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 2
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- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- IRPGOXJVTQTAAN-UHFFFAOYSA-N 2,2,3,3,3-pentafluoropropanal Chemical compound FC(F)(F)C(F)(F)C=O IRPGOXJVTQTAAN-UHFFFAOYSA-N 0.000 description 1
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminum fluoride Inorganic materials F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 229910005793 GeO 2 Inorganic materials 0.000 description 1
- 206010023126 Jaundice Diseases 0.000 description 1
- 229910020068 MgAl Inorganic materials 0.000 description 1
- 241001025261 Neoraja caerulea Species 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 125000005595 acetylacetonate group Chemical group 0.000 description 1
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- 238000007605 air drying Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 1
- 230000006690 co-activation Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
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- 230000002596 correlated effect Effects 0.000 description 1
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- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 230000005923 long-lasting effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 150000007530 organic bases Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 150000002927 oxygen compounds Chemical class 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000000247 postprecipitation Methods 0.000 description 1
- 238000006862 quantum yield reaction Methods 0.000 description 1
- 238000007634 remodeling Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/7734—Aluminates
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/7729—Chalcogenides
- C09K11/7731—Chalcogenides with alkaline earth metals
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/7737—Phosphates
- C09K11/7738—Phosphates with alkaline earth metals
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7783—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals one of which being europium
- C09K11/7784—Chalcogenides
- C09K11/7786—Chalcogenides with alkaline earth metals
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7783—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals one of which being europium
- C09K11/7792—Aluminates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
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Abstract
一种荧光粉包括选自锶、钡、钙及其组合的至少一种碱土金属和选自铝、镓、铟及其组合的至少一种IIIB族金属的氧化物,该荧光粉是用至少包括铕的稀土金属离子激活的。该荧光粉的特征在于正离子和负离子的比例是偏离化学计量的。该荧光粉可有效地在近UV到蓝光范围内被激发。含有这些荧光粉的至少之一并结合至少一种个发光二极管(100)的混合物可提供具有高亮度和高彩色再现指数的光源(10)。
Description
技术领域
本发明涉及用稀土离子激活的、含有碱土金属和IIIB族金属的氧化物的荧光粉。特别是,本发明涉及用至少铕离子激活的、含有碱土金属和IIIB族金属的氧化物的荧光粉,其中正离子和负离子的比例是偏离化学计量的。本发明还涉及具有这种荧光粉的光源。
背景技术
荧光粉是吸收一部分电磁波谱中的辐射能量并发射在另一部分电磁波谱内的能量的发光材料。一种重要分类的荧光粉是具有非常高化学纯度和控制成分的晶体无机化合物,其中已经添加了少量的其它元素(称为“激活剂”)以将它们转换成有效的荧光材料。通过激活剂和无机化合物的正确组合,可控制发射光的颜色。最有用和公知的荧光粉响应由可见光范围外的电磁辐射的激发而发射在电磁波谱的可见部分内的辐射。公知的荧光粉已经用在汞蒸气放电灯中以将由受激汞蒸气发射的紫外(“UV”)辐射转换成可见光。其它荧光粉通过被电极(用在阴极射线管中)或X射线(例如在X射线检测系统中的闪烁器)激发而发射可见光。
采用荧光粉的发光器件的效率随着激励辐射的波长和发射辐射的波长之间的差变窄而增加。因此,在提高白光光源的效率问题上,已经尽了很大的努力发现了具有在近UV到可见蓝光范围内的波长和响应这种波长的荧光粉的激励辐射光源。术语“近UV”指的是具有在约315nm到约400nm范围内的波长的UV辐射。近年来发光二极管(“LED”)技术的发展已经研制了在近UV到蓝光范围内发射的有效LED。发射在近UV到蓝光范围内的辐射的这些LED以下将称为“UV/蓝LED”。如这里使用的,UV/蓝LED可发射具有在近UV范围内、在蓝光范围内、或在从近UV到蓝光的宽范围内的波长的辐射。光源技术的趋势是提供可以由从这些UV/蓝LED辐射源发射的辐射激发的荧光粉范围,以便允许在使用用于产生各种颜色LED的荧光粉时的灵活性。这种荧光粉当与来自UV/蓝LED的发射组合时可提供消耗较少功率的有效的和长的持久发光器件。
近年来已经出现了很多以铟、铝、和镓的氮化物的组合物为基础的近UV/蓝LED。例如,美国专利US5777350公开了一种LED,其包括铟和镓的氮化物和p型和n型AlGaN的多层,它们在约380到约420nm的波长范围内发射。这种LED的有源层可用其它材料掺杂以使LED峰值发射在UV到蓝光波长范围内偏移。峰值发射在蓝光波长内并与用铈激活的发射黄光的钇铝石榴石荧光粉(YAG∶Ce)的涂层组合以产生白光的LED在美国专利US5998925中公开了。虽然白光器件所需要的基本部分可用LED基器件填充,但是UV/蓝LED与荧光粉组合的能力受到限制,因为YAG∶Ce是仅有的可由蓝光范围内的辐射激发的公知发黄光的荧光粉。
还可以通过混合蓝、绿和红光而产生白光。因此,希望提供一种新的有效的荧光粉,可以在近UV到蓝光范围内被激发并发射这些颜色的光。特别希望提供一种有效的发绿光的荧光粉,因为公知的发绿光的荧光粉主要在中UV波长范围内(约200-300nm)被激发。还希望提供一种可与UV/蓝LED组合的新的荧光粉混合物以产生高效和/或高彩色再现指数(“CRI”)的白光。
发明概述
本发明提供用稀土金属离子激活的、含有碱土和IIIB族金属的氧化物的荧光粉,该荧光粉可由具有在近UV到蓝光范围内(从约315到约480nm)的波长的辐射激发,以便有效地在从约480到约600nm的绿色到黄色可见光范围内发射。通常,本发明的荧光粉是碱土和IIIB族金属的氧化物并用至少铕离子掺杂的,其中铕离子用作激活剂。一种或多种稀土金属离子可作为共激活剂包含在其中,其它稀土金属离子选自铈、镨、钕、钐、钆、镝、钬、铒、铥、镱、和镥的离子。本发明的荧光粉具有以下的通式:
(M1-xREx)yD2O4;
其中M是选自Sr、Ba、Ca及其组合的碱土金属;RE是至少包括铕的稀土金属;D是选自铝、镓、铟及其组合的周期表中IIIB族的至少一种金属;0.001<x<0.3,y满足选自0.75<y<1和1<y<1.1的一种条件。
在本发明的一个方案中,荧光粉可进一步包括镁。
在本发明的另一方案中,提供一种包含至少一种碱土金属和至少用铕激活的至少一种IIIB族金属的氧化物的荧光粉的制造方法,该方法包括以下步骤:(a)提供适量的以下化合物:至少包括铕的至少一种稀土金属;至少选自锶、钡、钙及其组合的碱土金属;以及至少选自铝、镓、铟及其组合的IIIB族金属;它们的量选择成可实现荧光粉的最后成分;(b)任选地添加至少选自锶、钡、钙、铝、镓、铟和稀土金属的金属卤化物的至少一种助熔剂;(c)将这些化合物混合在一起;(d)在一定温度下和时间内、在还原气氛中进行焙烧,其中焙烧温度和时间足以使该混合物转换成至少用铕激活的、包括至少一种碱土金属和至少一种IIIB族金属的氧化物的荧光粉。
在本发明的又一方案中,该方法还包括在还原气氛中进行焙烧之前将混合物的化合物转换成含氧化合物的步骤。
在本发明的再一方案中,辐射可见光的光源包括UV/蓝LED和至少所述荧光粉,该荧光粉包括至少一种碱土金属和至少一种IIIB族金属的氧化物并用至少铕激活。
参照本发明的下述详细说明和附图使本发明的其它特征和优点更明显,其中附图中相同的标记表示相同的部件。
附图的简要说明
图1表示荧光粉Sr0.8Eu0.1Al2O4的激发和发射光谱。
图2表示由Sr0.8Eu0.1Al2O4、Ca5(PO4)3Cl∶Mn2+,Eu2+、和(Sr,Ba,Ca,)5(PO4)3(Cl,OH)∶Eu2+构成的荧光粉混合物的吸收光谱。
图3表示图2的荧光粉混合物的发射光谱。
图4表示包括LED和至少本发明的荧光粉的光源的实施例。
具体实施方式
本发明提供可由具有在近UV到蓝光范围内(从约315到约480nm)的波长的辐射有效地激发并有效地在从约480到约600nm的绿到黄色可见光范围内发射的荧光粉。术语“电磁辐射”、“辐射”以及“光”这里可互换使用,指的是具有在从UV到深红(从约100到约800nm)范国内的波长的电磁辐射。特别是,本发明的荧光粉具有在人眼的最大灵敏度范围内的峰值发射。在本公开中,金属以与相反离子组合的形式存在而不是作为零价金属存在。本发明的荧光粉包括至少一种碱土金属和至少一种IIIB族金属的氧化物并用至少一种稀土金属离子掺杂,其中所述稀土金属离子至少包括铕。该荧光粉具有以下通式:
(M1-xREx)yD2O4;
其中M是选自Sr、Ba、Ca及其组合的碱土金属;RE是至少包括铕的稀土金属;D是至少选自铝、镓、铟及其组合的周期表中IIIB族的一种金属;0.001<x<0.3,y满足选自0.75<y<1和1<y<1.1的一种条件。
在一个优选实施例中,荧光粉具有(Sr1-xEux)yAl2O4的通式;其中0.001<x<0.3,y满足选自0.75<y<1和1<y<1.1的一种条件。
在本发明的另一实施例中,荧光粉还用另一稀土金属离子共激活,该稀土金属离子选自铈、镨、钕、钐、钆、镝、钬、铒、铥、镱、和镥的离子。这种其它稀土金属离子可包括总碱土金属和稀土金属的约0.001到约30原子%、优选约0.001到约20原子%、更优选约0.001到约10原子%。
在本发明的另一方案中,该荧光粉还可包括镁,其量是碱土金属的约0.001到约20原子%。
用至少铕激活的、包括至少碱土金属和IIIB族金属的氧化物的本发明的荧光粉可通过固态反应制造。该方法包括以下步骤:(a)提供以下成分的适量含氧化合物:(1)至少包括铕的至少稀土金属;(2)至少选自锶、钡、钙及其组合的碱土金属;以及(3)至少选自铝、镓、铟及其组合的IIIB族金属;所述量选择成可实现最后荧光粉的希望成分;(b)将所述含氧化合物混合在一起形成混合物;(c)在一定温度下和时间内、在还原气氛中进行焙烧,其中焙烧温度和时间足以使该混合物转换成至少用铕激活的、包括至少碱土金属和至少IIIB族金属的氧化物的荧光粉。
在优选实施例中,该方法还包括在将各种化合物混合在一起之前向含氧化合物中添加选自锶、钡、钙、铝、镓、铟、铕、及其组合的至少一种金属并作为助熔剂。可以混合物总重量的高达约20、优选高达约10、更优选高达约5重量百分比的量添加卤化物。优选的卤化物是氟化物。
在本发明的另一方案中,该方法还包括在混合之前,向合氧化合物的混合物中添加至少一种附加的稀土金属的至少一种含氧化合物。该至少附加的稀土金属用作荧光粉中的共激活剂并选自铈、镨、钕、钐、钆、镝、钬、铒、铥、镱、和镥的离子。
在优选实施例中,含氧化合物是氧化物。
在本发明的又一方案中,含氧化合物可以是可分解成氧化物的化合物,如碳酸盐、硝酸盐、氮化物、硫酸盐、亚硫酸盐、氯酸盐、高氯酸盐、卤氧化物、乙酸盐、柠檬酸盐、有机酸盐以及其组合。含氧化合物优选选择成使得它们在约400℃到约900℃范围内的温度下分解。该分解是在还原气氛中的焙烧步骤之前,通常在空气中或在空气和惰性气体的混合物中进行,其中惰性气体选自氮、氦、氩、氖、氙、氪、及其混合物。
可通过任何机械方法将该化合物混合在一起,包括(但不限于)在高速混料机或螺旋叶片式混合机中搅拌或混合。含氧化合物可在球磨机、锤式粉碎机、喷射研磨机中组合和研磨在一起。该混合可通过湿研磨进行,尤其是在含氧化合物的混合物被制成为用于后续沉淀反应的溶液。用于湿研磨的溶剂可以是醇,如甲醇、乙醇或丙醇。如果混合物是湿的,可以在焙烧步骤之前首先进行干燥。
含氧化合物的混合物或分解氧化物产物在约900到1300℃、优选从约1000℃到约1200℃范围内的温度下焙烧,焙烧时间足以将该混合物转换成最终荧光粉。焙烧可以在间歇或连续工艺中进行,优选使用搅拌或混合动作以促进良好的气体-固体接触。焙烧时间取决于要焙烧的混合物的量、通过焙烧设备引入的气体的速率以及焙烧设备中的气-固接触的品质。通常,焙烧时间为约1分钟到约10小时是合适的。还原气氛通常包括还原气体,如氢气、一氧化碳、或其混合物,任选地用惰性气体如氮、氦、氖、氩、氪、氙或其组合物稀释。合适的还原气氛是在氮气中包括约1-3体积百分比的氢。或者,含有该混合物的坩埚被封装在含有高纯碳颗粒的第二封闭坩埚中并在限制量的空气中焙烧,以便碳颗粒与空气中的氧反应,由此产生提供还原气氛所需要的一氧化碳。焙烧可在基本上恒定温度下进行,或者温度可以从室温开始升高,然后保持在最终焙烧温度用于持续焙烧。或者,焙烧可以在两个或多个温度下的阶段中进行,每个阶段可在不同的还原气氛中进行。
图1表示由固态反应制造的荧光粉Sr0.8Eu0.1Al2O4的激发和发射光谱,如前所述。在这个样品的制造中,氟化铝用作助熔剂,其量为混合物总重量的约2重量百分比。将该混合物在包括氮气中的1体积百分比氢的气氛下以约1100℃在第一坩埚中焙烧,其中第一坩埚设置在用碳颗粒封装的第二坩埚中。注意该荧光粉有效地在从约350到约430nm的波长内被激发。该荧光粉具有Sr4Al14O25∶Eu2+荧光粉(“SAE”)的约65-70%的相对量子效率、约80%的在405nm的吸收率以及x=0.276和y=0.571的CIE坐标。
或者,荧光粉可用湿方法制造。下列一种或多种化合物可以是可溶于水溶液中的氧化物以外的氧化物:至少包括铕的稀土金属;选自锶、钡、钙、及其组合的碱土金属;和至少选自铝、镓、铟、及其组合的IIIB族金属,其中所述水溶液例如为硝酸盐、硫酸盐、柠檬酸盐、氯酸盐、高氯酸盐、卤氧化物、或有机化合物。有机化合物的非限制例子是含有1-6个碳原子的一和二羧酸的金属盐、含有1-6个碳原子的二羧酸的酯、具有1或2个芳族环的芳香酸的金属盐、金属乙酰丙酮化物、含有1-6个碳原子的金属醇盐、和金属酚盐。例如,包括铕的至少一种稀土金属;选自锶、钡、钙、及其组合的至少一种碱土金属;和选自铝、镓、铟、及其组合的至少一种IIIB族金属的化合物在酸如硝酸溶液中混合和溶解。在本发明的一个实施例中,化合物的至少一种、优选IIIB族金属是卤化物,优选是氟化物。选择酸溶液的强度以快速溶解该化合物并在本领域技术人员范围内进行选择。然后以增量向含有这些金属的酸性溶液中添加氢氧化铵,同时搅拌以使含有选择元素的氢氧化物的混合物沉淀,直到沉淀完全为止。通常,当溶液的混合物的PH值升高到8以上时完成了这个步骤。其它铵化物如碳酸铵、或草酸铵也可用于被选元素的化合物的沉淀。可使用有机碱,如甲醇胺、乙醇胺、丙醇胺、二甲醇胺、二乙醇胺、二丙醇胺、三甲醇胺、三乙醇胺或三丙醇胺代替氢氧化铵。该沉淀物被过滤、清洗和任选地在空气中干燥。沉淀物可以任选地在空气中或在空气和惰性气体的混合物中在约400℃和约900℃之间的温度下加热,加热时间足以保证材料基本上完全脱水和使用的任何有机材料分解。希望在该加热之前研磨或粉碎该干燥沉淀物。分解之后,该混合物基本上包括至少铕、至少碱土金属和至少IIIB族金属的氧化物。然后在还原气氛中焙烧干燥沉淀物或分解沉淀物,如前面所述。
本发明的荧光粉可与用在具有高亮度和CRI的光源中的其它荧光粉混合。表1比较了包括本发明的荧光粉Sr0.8Eu0.1Al2O4的混合物和包括现有技术的荧光粉的混合物的模拟结果。在表1中,“HALO”、“SAE”、“SECA”、以及“BAMn”分别表示荧光粉Ca5(PO4)3Cl∶Mn2+,Eu2+(在黄-红区域发射)、Sr4Al14O25∶Eu2+(在蓝-绿区域辐射)、(Sr,Ba,Ca,)5(PO1)3(Cl,OH)∶Eu2+(在蓝光区域辐射)以及(Sr,Ba,Ca,)Mg3Al14O25∶Eu2+,Mn2+(分别在绿光区域发射)。
表1
混合物 | 亮度(1m/W电) | CRI | 红(%) | 绿(%) | 蓝(%) |
HALO/SAE | 296 | 75 | 15.1 | 6.92 | 2.95 |
HALO/SECA/BAMn | 306 | 93 | 15.7 | 6.54 | 7.97 |
HALO/SECA/Sr0.8Eu0.1Al2O4 | 318 | 87 | 14.1 | 9.25 | 7.8 |
本发明的Sr0.8Eu0.1Al2O4与HALO和SECA荧光粉的另一混合物的光谱功率分布的模拟表明HALO荧光粉的约90%的量子效率、约77%的在405nm的吸收率、约3401m/W电的亮度、82的CRI、约4000K的相关色温、以及x=0.387和y=0.395的CIE坐标,这将该光源近似放在黑体色点上。这种混合物的吸收率和发射光谱示于图2和3中。这种荧光粉混合物的光谱功率分布可提供近似于荧光灯的亮度。
LED基发白光器件
包括本发明的荧光粉和在蓝、黄和红光区发射的其它选择的荧光粉在器件中的结合应该提供有效地应用电功率的白光光源,其中该器件包括发射在约350到约450nm范围内的近UV到蓝光的LED。这种混合物可以是前面所述的混合物。发射蓝光的荧光粉(峰值发射在约400到约480nm范围内)的非限制性例子是(Sr,Ba,Ca,)5(PO4)3(Cl,F,OH)∶Eu2+和(Sr,Ba,Ca,)MgAl10O17∶Eu2+。发射蓝绿光的荧光粉(峰值发射在约480到500nm范围内)的非限制性例子是Sr4Al14O25∶Eu2+(“SAE”)、2SrO·0.84P2O3·0.16B2O3∶Eu2+、MgWO4、BaTiP2O8、和Ca5(PO4)3(Cl,F,OH)∶Sb3+,Mn2+。发射绿光的荧光粉(峰值发射在约500到约550nm范围内)的非限制性例子是LaPO4∶Ce3+,Tb3+(“LAP”)、CeMgAl11O19∶Tb3+、和GdMgB5O10∶Ce3+,Tb3+(“CBT”)。发射橙色光的荧光粉(峰值发射在约550到约630nm范围内)的非限制性例子是Y3Al5O12∶Ce3+(“YAG∶Ce”)和(Sr,Ba,Ca,)5(PO4)3(Cl,F,OH)∶Eu2+,Mn2+,Sb3+。发射红光的荧光粉(峰值发射在约610到700nm范围内)的非限制性例子是Y2O3∶Eu3+、(Sr,Mg)3(PO4)2∶Sn2+、YBO3∶Eu3+、和3.5MgO·0.5MgF2·GeO2∶Mn4+。
可通过采用一种UV/蓝LED制造白光光源以提供点光源,或通过采用多个UV/蓝LED提供大面积发光器件。术语“大面积”指的是比约10cm2大的面积。
在图4所示的本发明的一个实施例中,白光光源10包括在约350到约450nm范围内的近UV到蓝光区域发射的LED100和包括本发明的荧光粉的荧光粉混合物。LED100安装在具有与LED100相邻的反射表面140的杯状物120中。适合于发射白光器件的UV/蓝LED是InGaN半导体基LED,如在前述美国专利US5777350中公开的,这里引入其内容供参考。也可以采用其它UV/蓝LED,如以用各种金属掺杂的GaN半导体为基础的LED以提供大的带隙。提供电引线150和152以向LED100输送电功率。透明铸件160包括其中基本上均匀分散了本发明的荧光粉混合物的颗粒200的环氧树脂、硅酮或玻璃180。或者,荧光粉颗粒可涂敷在LED100上或只分散在一部分透明铸件160中。也可采用其它透明聚合物,如聚碳酸酯以形成透明铸件。此外,荧光粉颗粒当中在透明铸件中可包含光散射材料如TiO2或Al2O3的颗粒,以便提高从光源10发射的光的均匀性。LED的InGaN有源层的成分和实际在铸件中应用的荧光粉的量可以如此选择,使得由LED发射的且没有被荧光粉吸收的一部分蓝光和由荧光粉混合物发射的宽光谱光组合以提供所希望的色温和CRI的白光光源10。如这里公开的白光光源适用于背照光源或一般照明目的。
用于一般照明的大面积白光光源可通过以下步骤制造:在反射面板上设置多个蓝光LED,给各个LED提供合适的电引线,施加包括本发明的荧光粉混合物和聚合物粘接剂如环氧树脂的涂层,然后在透明和气密密封中密封整个组合结构。荧光粉混合物/聚合物涂层可直接涂敷在各个LED上或可以涂敷在整个面板表面上。在前种情况下,可以在已经将荧光粉混合物涂敷在LED上之后在整个面板表面上涂敷附加的聚合物涂层。此外,光散射固体的颗粒如TiO2或AL2O3可设置在聚合物基底中以增强从器件发射的光的均匀性。
这里已经介绍了各种实施例,应该理解,通过上述说明在所附权利要求书限定的本发明的范围内本领域技术人员可对元件、改型、等效形式或改进作各种组合。
Claims (64)
1.一种包括至少一种碱土金属的氧化物和至少一种IIIB族金属的氧化物的荧光粉,其中所述碱土金属选自锶、钡、钙、及其组合,所述IIIB族金属选自铝、镓、铟及其组合,所述荧光粉是用至少包括铕的至少一种稀土金属的离子激活的,所述荧光粉具有以下通式:
(M1-xREx)yD2O4;
其中M是所述至少一种碱土金属;RE是至少包括铕的所述稀土金属;D是所述至少一种IIIB族的金属;0.001<x<0.3,并且y满足选自0.75<y<1和4<y<1.1的一种条件。
2.根据权利要求1的荧光粉,其中所述荧光粉吸收在从约350到约480nm的波长范围内的电磁辐射,并具有在从约500到约600nm的波长范围内的发射峰值。
3.根据权利要求1的荧光粉,其中所述荧光粉还可用至少一种附加稀土金属掺杂,该稀土金属选自铈、镨、钕、钐、钆、镝、钬、铒、铥、镱、和镥。
4.根据权利要求3的荧光粉,其中所述至少一种附加稀土金属包括所述至少一种碱土金属、所述铕和所述至少一种附加稀土金属的总量的约0.001到约30原子百分比。
5.根据权利要求3的荧光粉,其中所述至少一种附加稀土金属包括所述至少一种碱土金属、所述铕和所述至少一种附加稀土金属的总量的约0.001到约20原子百分比。
6.根据权利要求3的荧光粉,其中所述至少一种附加稀土金属包括所述至少一种碱土金属、所述铕和所述至少一种附加稀土金属的总量的约0.001到约10原子百分比。
7.根据权利要求1的荧光粉,其中所述荧光粉还包括镁。
8.根据权利要求7的荧光粉,其中所述镁包括所述至少一种碱土金属的约0.001到约20原子百分比。
9.一种荧光粉,包括锶和铝的氧化物并用铕离子激活,所述荧光粉具有以下通式:
(Sr1-xEux)yA12O4;
其中0.001<x<0.3,y满足选自0.75<y<1和1<y<1.1的一种条件。
10.一种荧光粉混合物,包括:
(a)第一荧光粉,其包括至少一种碱土金属的氧化物和至少一种IIIB族金属的氧化物,其中所述碱土金属选自锶、钡、钙、及其组合,所述IIIB族金属选自铝、镓、铟及其组合,所述荧光粉是用至少包括铕的至少一种稀土金属的离子激活的,所述荧光粉具有以下通式:
(M1-xREx)yD2O4;
其中M是所述至少一种碱土金属;RE是至少包括铕的所述稀土金属;D是所述至少一种IIIB族的金属;0.001<x<0.3,并且y满足选自0.75<y<1和1<y<1.1的一种条件;和
(b)至少一种附加荧光粉,其选自可由具有在约315到约480nm范围内的波长的辐射激发的荧光粉,其中所述荧光粉具有在蓝、蓝-绿、绿、黄-橙和红光波长的至少之一中的峰值发射。
11.根据权利要求10的荧光粉混合物,其中所述第一荧光粉还包括镁,其量为所述碱土金属的约0.001到约20原子百分比。
12.根据权利要求10的荧光粉混合物,其中在所述蓝光波长范围内的所述峰值发射处于从约400到约480nm的范围内。
13.根据权利要求10的荧光粉混合物,其中在所述蓝-绿光波长范围内的所述峰值发射处于从约480到约500nm的范围内。
14.根据权利要求10的荧光粉混合物,其中在所述绿光波长范围内的所述峰值发射处于从约500到约550nm的范围内。
15.根据权利要求10的荧光粉混合物,其中在所述黄-橙光波长范围内的所述峰值发射处于从约550到约630nm的范围内。
16.根据权利要求10的荧光粉混合物,其中在所述红光波长范围内的所述峰值发射处于从约610到约700nm的范围内。
17.一种荧光粉混合物,包括Sr0.8Eu0.1Al2O4、Ca5(PO4)3Cl∶Mn2+,Eu2+、和(Sr,Ba,Ca,)5(PO4)3(Cl,OH)∶Eu2+。
18.一种荧光粉的制造方法,所述方法包括:
(a)提供以下成分的适量的含氧化合物:至少包括铕的至少一种稀土金属;至少选自锶、钡、钙及其组合的至少一种碱土金属;和选自铝、镓、锢及其组合的至少一种IIIB族金属;
(b)将所述含氧化合物混合在一起形成混合物;和
(c)在一定温度下和时间内、在还原气氛中焙烧所述混合物,其中焙烧温度和时间足以使所述混合物转换成具有以下通式的所述荧光粉:
(M1-xREx)yD2O4;
其中M是所述至少一种碱土金属;RE是至少包括铕的所述稀土金属;D是所述至少一种IIIB族的金属;0.001<x<0.3,并且y满足选自0.75<y<1和1<y<1.1的一种条件。
19.根据权利要求18的方法,还包括添加选自稀土金属、锶、钡、钙、铝、镓、铟及其组合的至少一种金属的至少一种卤化物。
20.根据权利要求18的方法,其中所述含氧化合物是氧化物。
21.根据权利要求18的方法,其中所述焙烧是在约900到约1300℃范围内的温度下进行的。
22.根据权利要求18的方法,其中所述焙烧是在约1000到约1100℃范围内的温度下进行的。
23.根据权利要求18的方法,其中所述焙烧是在基本上恒定的温度下进行的。
24.根据权利要求18的方法,其中所述温度从环境温度升高到最终温度。
25.根据权利要求18的方法,其中所述焙烧是在从约1分钟到约10小时的时间内进行的。
26.根据权利要求18的方法,其中所述焙烧是在包括选自氢气和一氧化碳的气体的气氛中进行的。
27.根据权利要求18的方法,其中所述焙烧是在氮气中包括从约1到约3体积百分比的氢的气氛中进行的。
28.一种制造荧光粉的方法,所述方法包括:
(a)提供以下成分的适量的化合物:至少包括铕的至少一种稀土金属;至少选自锶、钡、钙及其组合的至少一种碱土金属;和至少一种选自铝、镓、铟及其组合的IIIB族金属;
(b)将所述化合物混合在一起形成混合物;
(c)加热所述混合物以将所述混合物转换成氧化物的混合物;和
(d)在一定温度和时间内在还原气氛中焙烧所述氧化物混合物,所述温度和时间足以保证将所述化合物转换成具有以下通式的所述荧光粉:
(M1-xREx)yD2O4;
其中M是所述至少一种碱土金属;RE是至少包括铕的所述稀土金属;D是所述至少一种IIIB族的金属;0.001<x<0.3,并且y满足选自0.75<y<1和1<y<1.1的一种条件。
29.根据权利要求28的方法,其中所述化合物选择碳酸盐、硝酸盐、氮化物、硫酸盐、亚硫酸盐、氯酸盐、高氯酸盐、卤氧化物、乙酸盐、柠檬酸盐、有机酸盐以及其组合。
30.根据权利要求28的方法,还包括添加选自稀土金属、锶、钡、钙、铝、镓、锢及其组合的至少一种金属的至少一种卤化物。
31.根据权利要求28的方法,其中所述加热是在约400到约900℃范围内的温度下进行的。
32.根据权利要求28的方法,其中所述加热是在含氧气体中进行的。
33.根据权利要求28的方法,其中所述焙烧是在约900到约1300℃范围内的温度下进行的。
34.根据权利要求28的方法,其中所述焙烧是在约1000到约1100℃范围内的温度下进行的。
35.根据权利要求28的方法,其中所述焙烧是基本上恒定的温度下进行的。
36.根据权利要求28的方法,其中所述温度从环境温度升高到最终温度。
37.根据权利要求28的方法,其中所述焙烧是在从约1分钟到约10小时的时间内进行的。
38.根据权利要求28的方法,其中所述焙烧是在含有选自氢气和一氧化碳的气体的气氛中进行的。
39.根据权利要求28的方法,其中所述焙烧是在氮气中含有从约1到约3体积百分比的氢的气氛中进行的。
40.一种荧光粉的制造方法,所述方法包括:
(a)提供包含以下成分的化合物的第一溶液:至少包括铕的至少一种稀土金属;选自锶、钡、钙及其组合的至少一种碱土金属;和至少一种选自铝、镓、铟及其组合的IIIB族金属,所述化合物选自硝酸盐、硫酸盐、乙酸盐、柠檬酸盐、氯酸盐、高氯酸盐、卤氧化物、含有1-6个碳原子的有机酸盐、含有1-6个碳原子的二羧酸酯、具有1或2个芳香环的芳香酸盐、乙酰丙酮化合物、醇盐、酚盐及其组合;
(b)提供包括选自氢氧化铵、碳酸铵、草酸铵、甲醇胺、乙醇胺、丙醇胺、二甲醇胺、二乙醇胺、二丙醇胺、三甲醇胺、三乙醇胺或三丙醇胺及其混合物的材料的第二溶液;
(c)向所述第一溶液中添加所述第二溶液以形成沉淀物;和
(d)在一定温度和时间内在还原气氛中焙烧所述沉淀物,所述温度和所述时间足以保证将所述混合物转换成具有以下通式的所述荧光粉:
(M1-xREx)yD2O4;
其中M是所述至少一种碱土金属;RE是至少包括铕的所述稀土金属;D是所述至少一种IIIB族的金属;0.001<x<0.3,并且y满足选自0.75<y<1和1<y<1.1的一种条件。
41.根据权利要求40的方法,还包括添加选自稀土金属、锶、钡、钙、铝、镓、铟及其组合的至少一种金属的至少一种卤化物。
42.根据权利要求40的方法,还包括在焙烧步骤之前在约400到约900℃范围内的温度下加热所述沉淀物。
43.根据权利要求42的方法,其中所述加热是在含氧气体中进行的。
44.根据权利要求42的方法,其中所述焙烧是在约900到约1300℃范围内的温度下进行的。
45.根据权利要求42的方法,其中所述焙烧是在约1000到约1100℃范围内的温度下进行的。
46.根据权利要求42的方法,其中所述焙烧是基本上恒定的温度下进行的。
47.根据权利要求42的方法,其中所述温度从环境温度升高到最终温度。
48.根据权利要求42的方法,其中所述焙烧是在从约1分钟到约10小时的时间内进行的。
49.根据权利要求42的方法,其中所述焙烧是在包括选自氢气和一氧化碳的气体的气氛中进行的。
50.根据权利要求42的方法,其中所述焙烧是在氮气中包括从约1到约3体积百分比氢的气氛中进行的。
51.一种光源(10),包括:
(a)至少一种个LED(100),其可发射具有在从约315到约480nm范围内的波长的辐射;和
(b)荧光粉铸件(160),其包括透明材料(180)和荧光粉混合物的颗粒(200),该荧光粉混合物颗粒包括:
(1)包括选自锶、钡、钙及其组合的至少一种碱土金属的氧化物和选自铝、镓、铟及其组合的至少一种IIIB族金属的氧化物的第一荧光粉,所述荧光粉是用包括至少铕的至少一种稀土金属的离子激活的,所述荧光粉具有以下通式:
(M1-xREx)yD2O4;
其中M是所述至少一种碱土金属;RE是至少包括铕的所述稀土金属;D是所述至少一种IIIB族的金属;0.001<x<0.3,并且y满足选自0.75<y<1和1<y<1.1的一种条件;和
(2)选自由具有在约315到约480nm范围内的波长的辐射激发的荧光粉的至少一种附加荧光粉,其中所述荧光粉具有在蓝、蓝-绿、绿、黄-橙、以及红光波长的至少之一内的峰值发射。
52.根据权利要求51的光源(10),其中所述第一荧光粉还包括镁,其量为所述至少一种碱土金属的约0.001到约20原子百分比。
53.根据权利要求51的光源(10),其中所述荧光粉铸件还包括光散射材料的颗粒。
54.根据权利要求51的光源(10),其中在所述蓝光波长范围内的所述峰值发射处于从约400到约480nm的范围内。
55.根据权利要求51的光源(10),其中在所述蓝-绿光波长范围内的所述峰值发射处于从约480到约500nm的范围内。
56.根据权利要求51的光源(10),其中在所述绿光波长范围内的所述峰值发射处于从约500到约550nm的范围内。
57.根据权利要求51的先源(10),其中在所速黄-橙光波长范围内的所述峰值发射处于从约550到约630nm的范围内。
58.根据权利要求51的光源(10),其中在所述红光波长范围内的所述峰值发射处于从约610到约700nm的范围内。
59.一种光源(10),包括:
(a)能发射具有在约315到约480nm范围内的波长的辐射的至少一种个LED(100);和
(b)荧光粉铸件(160),包括透明材料(180)和荧光粉混合物的颗粒(200),该荧光粉混合物包括Sr0.8Eu0.1Al2O4、Ca5(PO4)3Cl∶Mn2+,Eu2+、和(Sr,Ba,Ca,)5(PO4)3(Cl,OH)∶Eu2+。
60.根据权利要求59的光源(10),其中所述荧光粉铸件(180)还包括光散射材料的颗粒。
61.一种光源(10),包括:
(a)固定到反射面板上的多个LED(100),所述LED可以发射具有在约315到约480nm范围内的波长的辐射;和
(b)荧光粉涂层(180),其包括聚合物粘接剂和分散在其中的荧光粉混合物的颗粒(200),所述涂层(180)设置在从所述LED(100)发射的辐射的方向中,所述荧光粉混合物包括:
(1)包括选自锶、钡、钙及其组合的至少一种碱土金属的氧化物和选自铝、镓、铟及其组合的至少一种IIIB族金属的氧化物的第一荧光粉,所述荧光粉是用包括至少铕的至少一种稀土金属的离子激活的,所述荧光粉具有以下通式:
(M1-xREx)yD2O4;
其中M是所述至少一种碱土金属;RE是至少包括铕的所述稀土金属;D是所述至少一种IIIB族的金属;0.001<x<0.3,并且y满足选自0.75<y<1和1<y<1.1的一种条件;和
(2)选自由具有在约315到约480nm范围内的波长的辐射激发的荧光粉的至少一种附加荧光粉,其中所述荧光粉具有在蓝、蓝-绿、绿、黄-橙、以及红光波长的至少之一内的峰值发射。
62.根据权利要求61的光源,其中所述涂层还包括光散射材料的颗粒。
63.根据权利要求61的光源,还包括围绕所述面板、所述LED和所述荧光粉涂层的全体设置的密封。
64.一种光源,包括:
固定到反射面板上的多个LED,所述LED可发射具有在约315到约480nm范围内的波长的辐射;和
(b)荧光粉涂层,其包括聚合物粘接剂和分散在其中的荧光粉混合物的颗粒,所述涂层设置在从所述LED发射的辐射的方向中,所述荧光粉混合物包括Sr0.8Eu0.1Al2O4、Ca5(PO4)3Cl∶Mn2+,Eu2+、和(Sr,Ba,Ca,)5(PO4)3(Cl,OH)∶Eu2+。
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102382649A (zh) * | 2010-08-31 | 2012-03-21 | 海洋王照明科技股份有限公司 | 掺In的稀土氧化物发光材料及其制备方法 |
TWI448536B (zh) * | 2011-03-08 | 2014-08-11 | Intematix Corp | 以鹵化鋁酸鹽為主之黃-綠至黃發光磷光體 |
CN104119869A (zh) * | 2013-04-26 | 2014-10-29 | 海洋王照明科技股份有限公司 | 一种镓酸锶发光材料及其制备方法 |
Families Citing this family (64)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7051351B2 (en) * | 1999-03-08 | 2006-05-23 | Microsoft Corporation | System and method of inserting advertisements into an information retrieval system display |
US7091656B2 (en) * | 2001-04-20 | 2006-08-15 | Nichia Corporation | Light emitting device |
MY134305A (en) * | 2001-04-20 | 2007-12-31 | Nichia Corp | Light emitting device |
DE10131698A1 (de) * | 2001-06-29 | 2003-01-30 | Osram Opto Semiconductors Gmbh | Oberflächenmontierbares strahlungsemittierendes Bauelement und Verfahren zu dessen Herstellung |
GB0118258D0 (en) * | 2001-07-26 | 2001-09-19 | Cambridge Display Tech Ltd | Electrode compositions |
US7768189B2 (en) * | 2004-08-02 | 2010-08-03 | Lumination Llc | White LEDs with tunable CRI |
US7800121B2 (en) | 2002-08-30 | 2010-09-21 | Lumination Llc | Light emitting diode component |
US20040061810A1 (en) * | 2002-09-27 | 2004-04-01 | Lumileds Lighting, U.S., Llc | Backlight for a color LCD using wavelength-converted light emitting devices |
CN1759492B (zh) * | 2003-03-10 | 2010-04-28 | 丰田合成株式会社 | 固体元件装置的制造方法 |
DE602004002296T2 (de) * | 2003-04-07 | 2007-04-26 | Nanolumens Acquisition, Inc. | Europium-dotierte gallium-indium oxide als rot-emittierende, elektrolumineszente phosphormaterialien |
EP1644985A4 (en) * | 2003-06-24 | 2006-10-18 | Gelcore Llc | FULL SPECTRUM FLUID MIXTURES FOR WHITE GENERATION WITH LED CHIPS |
WO2005015646A1 (ja) * | 2003-08-07 | 2005-02-17 | Matsushita Electric Industrial Co., Ltd. | Led照明光源 |
US7488432B2 (en) * | 2003-10-28 | 2009-02-10 | Nichia Corporation | Fluorescent material and light-emitting device |
US7183588B2 (en) * | 2004-01-08 | 2007-02-27 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Light emission device |
US7329904B2 (en) * | 2004-01-30 | 2008-02-12 | Toyoda Gosei Co., Ltd. | LED lamp device |
US20050236958A1 (en) * | 2004-04-23 | 2005-10-27 | Harvatek Corporation | White light-emitting device |
KR101041311B1 (ko) * | 2004-04-27 | 2011-06-14 | 파나소닉 주식회사 | 형광체 조성물과 그 제조 방법, 및 그 형광체 조성물을 이용한 발광장치 |
US7077980B2 (en) * | 2004-05-03 | 2006-07-18 | General Electric Company | Phosphors containing oxides of alkaline-earth and group-13 metals, and light sources incorporating the same |
EP1769050B1 (en) * | 2004-07-06 | 2013-01-16 | Lightscape Materials Inc. | Efficient, green-emitting phosphors, and combinations with red-emitting phosphors |
US8417215B2 (en) * | 2004-07-28 | 2013-04-09 | Koninklijke Philips Electronics N.V. | Method for positioning of wireless medical devices with short-range radio frequency technology |
US20070241657A1 (en) * | 2004-08-02 | 2007-10-18 | Lumination, Llc | White light apparatus with enhanced color contrast |
US7453195B2 (en) | 2004-08-02 | 2008-11-18 | Lumination Llc | White lamps with enhanced color contrast |
US20060181192A1 (en) * | 2004-08-02 | 2006-08-17 | Gelcore | White LEDs with tailorable color temperature |
US20060081815A1 (en) * | 2004-10-15 | 2006-04-20 | Terralium Industries Inc. | Light accumulating and luminous materials and a process to produce same |
WO2006095285A1 (en) | 2005-03-09 | 2006-09-14 | Philips Intellectual Property & Standards Gmbh | Illumination system comprising a radiation source and a fluorescent material |
US7276183B2 (en) * | 2005-03-25 | 2007-10-02 | Sarnoff Corporation | Metal silicate-silica-based polymorphous phosphors and lighting devices |
KR100799839B1 (ko) * | 2005-03-30 | 2008-01-31 | 삼성전기주식회사 | 파장변환용 형광체 혼합물과 이를 이용한 백색 발광장치 |
US20060228973A1 (en) * | 2005-04-11 | 2006-10-12 | Jlj, Inc. | LED Light Strings |
US7329907B2 (en) | 2005-08-12 | 2008-02-12 | Avago Technologies, Ecbu Ip Pte Ltd | Phosphor-converted LED devices having improved light distribution uniformity |
US20070114561A1 (en) * | 2005-11-22 | 2007-05-24 | Comanzo Holly A | High efficiency phosphor for use in LEDs |
US8906262B2 (en) | 2005-12-02 | 2014-12-09 | Lightscape Materials, Inc. | Metal silicate halide phosphors and LED lighting devices using the same |
KR100764148B1 (ko) * | 2006-01-17 | 2007-10-05 | 루시미아 주식회사 | 시트상 형광체와 그 제조방법 및 이를 이용한 발광장치 |
JP2007300069A (ja) * | 2006-04-04 | 2007-11-15 | Toyoda Gosei Co Ltd | 発光素子、この発光素子を用いた発光装置及びこの発光素子の製造方法 |
CN101605867B (zh) | 2006-10-03 | 2013-05-08 | 渲染材料公司 | 金属硅酸盐卤化物磷光体以及使用它们的led照明器件 |
US9120975B2 (en) | 2006-10-20 | 2015-09-01 | Intematix Corporation | Yellow-green to yellow-emitting phosphors based on terbium-containing aluminates |
US8475683B2 (en) | 2006-10-20 | 2013-07-02 | Intematix Corporation | Yellow-green to yellow-emitting phosphors based on halogenated-aluminates |
US8133461B2 (en) | 2006-10-20 | 2012-03-13 | Intematix Corporation | Nano-YAG:Ce phosphor compositions and their methods of preparation |
US8529791B2 (en) | 2006-10-20 | 2013-09-10 | Intematix Corporation | Green-emitting, garnet-based phosphors in general and backlighting applications |
US20080171229A1 (en) * | 2007-01-17 | 2008-07-17 | General Electric Company | Method of producing a palette of colors for persistent phosphors and phosphors made by same |
US8003012B2 (en) * | 2007-01-17 | 2011-08-23 | General Electric Company | Method for producing a palette of colors for persistent phosphors and phosphors made by same |
US8333907B2 (en) | 2007-01-17 | 2012-12-18 | Utc Fire & Security Corporation | Articles using persistent phosphors |
US7959827B2 (en) * | 2007-12-12 | 2011-06-14 | General Electric Company | Persistent phosphor |
US7864381B2 (en) * | 2007-03-20 | 2011-01-04 | Xerox Corporation | Document illuminator with LED-driven phosphor |
US7708968B2 (en) * | 2007-03-26 | 2010-05-04 | General Electric Company | Nano-scale metal oxide, oxyhalide and oxysulfide scintillation materials and methods for making same |
US7625502B2 (en) * | 2007-03-26 | 2009-12-01 | General Electric Company | Nano-scale metal halide scintillation materials and methods for making same |
US7608829B2 (en) * | 2007-03-26 | 2009-10-27 | General Electric Company | Polymeric composite scintillators and method for making same |
US8545723B2 (en) * | 2007-12-12 | 2013-10-01 | General Electric Company | Persistent phosphor |
KR101416319B1 (ko) * | 2008-03-19 | 2014-07-09 | 삼성전자주식회사 | 메모리 칩들이 적층되는 메모리 모듈을 포함하는 반도체메모리 장치 |
JP5836122B2 (ja) | 2008-07-07 | 2015-12-24 | グロ アーベーGlo Ab | ナノ構造のled |
US8329060B2 (en) * | 2008-10-22 | 2012-12-11 | General Electric Company | Blue-green and green phosphors for lighting applications |
US8703016B2 (en) | 2008-10-22 | 2014-04-22 | General Electric Company | Phosphor materials and related devices |
US8456082B2 (en) | 2008-12-01 | 2013-06-04 | Ifire Ip Corporation | Surface-emission light source with uniform illumination |
US20110301672A1 (en) * | 2009-02-25 | 2011-12-08 | Koninklijke Philips Electronics N.V. | Uv-emitting discharge lamp |
US8593040B2 (en) | 2009-10-02 | 2013-11-26 | Ge Lighting Solutions Llc | LED lamp with surface area enhancing fins |
US20110109220A1 (en) * | 2009-11-09 | 2011-05-12 | Han-Ming Lee | Intermittent cyclic permanent illuminating LED lamp |
US20110147661A1 (en) * | 2009-12-21 | 2011-06-23 | Sam Joseph Camardello | Novel aluminosilicate based blue persistent phosphors |
TWI464463B (zh) * | 2010-06-11 | 2014-12-11 | Hon Hai Prec Ind Co Ltd | 導光板及背光模組 |
KR20120097697A (ko) * | 2011-02-25 | 2012-09-05 | 삼성전자주식회사 | 발광 다이오드 |
KR101851726B1 (ko) | 2011-11-23 | 2018-04-24 | 엘지이노텍 주식회사 | 표시장치 |
US9500355B2 (en) | 2012-05-04 | 2016-11-22 | GE Lighting Solutions, LLC | Lamp with light emitting elements surrounding active cooling device |
US8933478B2 (en) * | 2013-02-19 | 2015-01-13 | Cooledge Lighting Inc. | Engineered-phosphor LED packages and related methods |
US8847261B1 (en) * | 2013-03-14 | 2014-09-30 | Cooledge Lighting Inc. | Light-emitting devices having engineered phosphor elements |
JP2014181260A (ja) * | 2013-03-18 | 2014-09-29 | Toshiba Corp | 蛍光体、発光装置、および蛍光体の製造方法 |
US11251343B2 (en) * | 2017-02-08 | 2022-02-15 | Current Lighting Solutions, Llc | LED design of lower CCT utilizing PFS phosphor |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2543825B2 (ja) | 1993-04-28 | 1996-10-16 | 根本特殊化学株式会社 | 蓄光性蛍光体 |
TW353678B (en) | 1994-08-17 | 1999-03-01 | Mitsubishi Chem Corp | Aluminate phosphor |
JP3456553B2 (ja) | 1994-11-01 | 2003-10-14 | 根本特殊化学株式会社 | 蓄光性蛍光体 |
US5777350A (en) | 1994-12-02 | 1998-07-07 | Nichia Chemical Industries, Ltd. | Nitride semiconductor light-emitting device |
US5725801A (en) * | 1995-07-05 | 1998-03-10 | Adrian H. Kitai | Doped amorphous and crystalline gallium oxides, alkaline earth gallates and doped zinc germanate phosphors as electroluminescent materials |
JPH09217059A (ja) * | 1996-02-08 | 1997-08-19 | Toshiba Corp | 青色発光蛍光体,その製造方法および蛍光ランプ |
JPH101666A (ja) | 1996-06-13 | 1998-01-06 | Kasei Optonix Co Ltd | アルミン酸塩蛍光体、その製造方法及び真空紫外線励起発光素子 |
DE19638667C2 (de) * | 1996-09-20 | 2001-05-17 | Osram Opto Semiconductors Gmbh | Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement |
US5788882A (en) * | 1996-07-03 | 1998-08-04 | Adrian H. Kitai | Doped amorphous and crystalline alkaline earth gallates as electroluminescent materials |
TW383508B (en) | 1996-07-29 | 2000-03-01 | Nichia Kagaku Kogyo Kk | Light emitting device and display |
AU2790197A (en) | 1997-05-19 | 1998-12-11 | Citizen Watch Co. Ltd. | Phosphorescent pigment and process for preparing the same |
US6278135B1 (en) | 1998-02-06 | 2001-08-21 | General Electric Company | Green-light emitting phosphors and light sources using the same |
JP2000001672A (ja) * | 1998-06-15 | 2000-01-07 | Hirotsu Naotoshi | 蓄光性蛍光体微粒粉末及びその製造方法 |
JP2000356964A (ja) * | 1998-12-25 | 2000-12-26 | Nemoto & Co Ltd | 表示部材、表示装置、計測装置および時計 |
WO2000060026A1 (fr) | 1999-03-31 | 2000-10-12 | Somar Corporation | Materiau phosphorescent, composition contenant ce materiau, et procede d'absorption d'energie avec ce materiau |
US6190577B1 (en) | 1999-07-20 | 2001-02-20 | Usr Optonix Inc. | Indium-substituted aluminate phosphor and method for making the same |
JP3511083B2 (ja) * | 1999-08-06 | 2004-03-29 | 独立行政法人産業技術総合研究所 | 高輝度応力発光材料、その製造方法及びそれを用いた発光方法 |
JP3559210B2 (ja) * | 1999-11-08 | 2004-08-25 | 株式会社リード | 耐熱・耐水性・高輝度・長残光性黄緑発光色蓄光体及びその製造法 |
JP2002012863A (ja) * | 2000-06-27 | 2002-01-15 | Sumitomo Chem Co Ltd | 蓄光材用アルミン酸塩系蛍光体の製造方法 |
DE10036940A1 (de) * | 2000-07-28 | 2002-02-07 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Lumineszenz-Konversions-LED |
JP4077170B2 (ja) * | 2000-09-21 | 2008-04-16 | シャープ株式会社 | 半導体発光装置 |
JP2003197979A (ja) * | 2001-12-28 | 2003-07-11 | Okaya Electric Ind Co Ltd | 発光素子 |
-
2002
- 2002-06-28 US US10/064,285 patent/US6809471B2/en not_active Expired - Lifetime
-
2003
- 2003-06-17 TW TW092116401A patent/TWI309673B/zh not_active IP Right Cessation
- 2003-06-27 EP EP03254089A patent/EP1378555A1/en not_active Withdrawn
- 2003-06-27 CN CNA2007101613192A patent/CN101157855A/zh active Pending
- 2003-06-27 KR KR1020030042597A patent/KR100802831B1/ko not_active IP Right Cessation
- 2003-06-27 CN CN031480519A patent/CN1470596B/zh not_active Expired - Fee Related
- 2003-06-27 JP JP2003183822A patent/JP2004107623A/ja active Pending
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2007
- 2007-10-29 KR KR1020070108826A patent/KR100869396B1/ko not_active IP Right Cessation
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102382649A (zh) * | 2010-08-31 | 2012-03-21 | 海洋王照明科技股份有限公司 | 掺In的稀土氧化物发光材料及其制备方法 |
CN102382649B (zh) * | 2010-08-31 | 2014-02-19 | 海洋王照明科技股份有限公司 | 掺In的稀土氧化物发光材料及其制备方法 |
TWI448536B (zh) * | 2011-03-08 | 2014-08-11 | Intematix Corp | 以鹵化鋁酸鹽為主之黃-綠至黃發光磷光體 |
CN104119869A (zh) * | 2013-04-26 | 2014-10-29 | 海洋王照明科技股份有限公司 | 一种镓酸锶发光材料及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
TWI309673B (en) | 2009-05-11 |
KR20040002788A (ko) | 2004-01-07 |
KR100802831B1 (ko) | 2008-02-12 |
CN101157855A (zh) | 2008-04-09 |
JP2004107623A (ja) | 2004-04-08 |
EP1378555A1 (en) | 2004-01-07 |
CN1470596B (zh) | 2011-06-22 |
TW200404883A (en) | 2004-04-01 |
US20040000862A1 (en) | 2004-01-01 |
US6809471B2 (en) | 2004-10-26 |
KR20070111432A (ko) | 2007-11-21 |
KR100869396B1 (ko) | 2008-11-21 |
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