CN1457100A - 半导体存储器件 - Google Patents
半导体存储器件 Download PDFInfo
- Publication number
- CN1457100A CN1457100A CN02152675A CN02152675A CN1457100A CN 1457100 A CN1457100 A CN 1457100A CN 02152675 A CN02152675 A CN 02152675A CN 02152675 A CN02152675 A CN 02152675A CN 1457100 A CN1457100 A CN 1457100A
- Authority
- CN
- China
- Prior art keywords
- data
- clock signal
- address
- signal
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4076—Timing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/56—External testing equipment for static stores, e.g. automatic test equipment [ATE]; Interfaces therefor
- G11C29/56012—Timing aspects, clock generation, synchronisation
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
- G11C7/222—Clock generating, synchronizing or distributing circuits within memory device
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
Abstract
Description
Claims (6)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP134073/2002 | 2002-05-09 | ||
JP2002134073A JP2003331577A (ja) | 2002-05-09 | 2002-05-09 | 半導体記憶装置 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005100626891A Division CN100511472C (zh) | 2002-05-09 | 2002-11-29 | 半导体存储器件 |
CNB2005100626904A Division CN100538880C (zh) | 2002-05-09 | 2002-11-29 | 半导体存储器件 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1457100A true CN1457100A (zh) | 2003-11-19 |
CN1212666C CN1212666C (zh) | 2005-07-27 |
Family
ID=29397444
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005100626891A Expired - Fee Related CN100511472C (zh) | 2002-05-09 | 2002-11-29 | 半导体存储器件 |
CNB2005100626904A Expired - Fee Related CN100538880C (zh) | 2002-05-09 | 2002-11-29 | 半导体存储器件 |
CNB021526753A Expired - Fee Related CN1212666C (zh) | 2002-05-09 | 2002-11-29 | 半导体存储器件 |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005100626891A Expired - Fee Related CN100511472C (zh) | 2002-05-09 | 2002-11-29 | 半导体存储器件 |
CNB2005100626904A Expired - Fee Related CN100538880C (zh) | 2002-05-09 | 2002-11-29 | 半导体存储器件 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6667913B2 (zh) |
JP (1) | JP2003331577A (zh) |
KR (1) | KR100869985B1 (zh) |
CN (3) | CN100511472C (zh) |
TW (1) | TW578153B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102280129A (zh) * | 2010-06-09 | 2011-12-14 | 上海宏力半导体制造有限公司 | 闪速存储器及其读取电路 |
CN108022610A (zh) * | 2016-10-28 | 2018-05-11 | 芯成半导体有限公司 | 同步半导体集成电路中的时控式命令时序调整 |
CN114489233A (zh) * | 2022-01-24 | 2022-05-13 | 上海华力集成电路制造有限公司 | 一种相位可调任意波形发生器 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4271623B2 (ja) * | 2004-06-17 | 2009-06-03 | 富士通株式会社 | クロック調整装置および方法 |
DE102004044721B4 (de) * | 2004-09-15 | 2013-11-14 | Qimonda Ag | Selbsttest für die Phasenlage des Datenleseclocksignals DQS |
JP4808414B2 (ja) * | 2005-01-31 | 2011-11-02 | 富士通株式会社 | コンピュータシステム及びメモリシステム |
KR100834401B1 (ko) * | 2007-01-08 | 2008-06-04 | 주식회사 하이닉스반도체 | 반도체 메모리 소자와 그의 구동 방법 |
KR101006088B1 (ko) | 2009-06-04 | 2011-01-06 | 주식회사 하이닉스반도체 | 데이터 전달의 신뢰성을 보장하기 위한 반도체 메모리 장치 및 이를 포함하는 반도체 시스템 |
JP2010282511A (ja) * | 2009-06-05 | 2010-12-16 | Elpida Memory Inc | メモリモジュール及びこれを備えるメモリシステム |
JP2012043510A (ja) | 2010-08-20 | 2012-03-01 | Elpida Memory Inc | 半導体装置およびその制御方法 |
JP7195913B2 (ja) | 2018-12-19 | 2022-12-26 | キオクシア株式会社 | 半導体記憶装置 |
KR20200106732A (ko) * | 2019-03-05 | 2020-09-15 | 에스케이하이닉스 주식회사 | 반도체장치 |
CN114938258B (zh) * | 2022-07-25 | 2022-10-14 | 星河动力(北京)空间科技有限公司 | 火箭控制时钟同步装置、飞行控制器和箭上控制计算机 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5062081A (en) * | 1989-10-10 | 1991-10-29 | Advanced Micro Devices, Inc. | Multiport memory collision/detection circuitry |
JP3631277B2 (ja) * | 1995-01-27 | 2005-03-23 | 株式会社日立製作所 | メモリモジュール |
JP3703241B2 (ja) * | 1997-01-28 | 2005-10-05 | Necエレクトロニクス株式会社 | 半導体メモリ装置 |
KR100290007B1 (ko) * | 1998-07-23 | 2001-05-15 | 김철근 | 미꾸라지성장호르몬발현벡터 |
JP4117977B2 (ja) * | 1999-06-25 | 2008-07-16 | 富士通株式会社 | 半導体装置 |
JP2001195149A (ja) * | 2000-01-17 | 2001-07-19 | Mitsubishi Electric Corp | 内部クロック信号発生回路 |
-
2002
- 2002-05-09 JP JP2002134073A patent/JP2003331577A/ja active Pending
- 2002-11-01 US US10/285,425 patent/US6667913B2/en not_active Expired - Lifetime
- 2002-11-05 TW TW091132596A patent/TW578153B/zh not_active IP Right Cessation
- 2002-11-21 KR KR1020020072656A patent/KR100869985B1/ko active IP Right Grant
- 2002-11-29 CN CNB2005100626891A patent/CN100511472C/zh not_active Expired - Fee Related
- 2002-11-29 CN CNB2005100626904A patent/CN100538880C/zh not_active Expired - Fee Related
- 2002-11-29 CN CNB021526753A patent/CN1212666C/zh not_active Expired - Fee Related
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102280129A (zh) * | 2010-06-09 | 2011-12-14 | 上海宏力半导体制造有限公司 | 闪速存储器及其读取电路 |
CN102280129B (zh) * | 2010-06-09 | 2014-12-17 | 上海华虹宏力半导体制造有限公司 | 闪速存储器及其读取电路 |
CN108022610A (zh) * | 2016-10-28 | 2018-05-11 | 芯成半导体有限公司 | 同步半导体集成电路中的时控式命令时序调整 |
CN108022610B (zh) * | 2016-10-28 | 2021-10-29 | 芯成半导体有限公司 | 同步半导体集成电路中的时控式命令时序调整 |
CN114489233A (zh) * | 2022-01-24 | 2022-05-13 | 上海华力集成电路制造有限公司 | 一种相位可调任意波形发生器 |
CN114489233B (zh) * | 2022-01-24 | 2024-06-11 | 上海华力集成电路制造有限公司 | 一种相位可调任意波形发生器 |
Also Published As
Publication number | Publication date |
---|---|
CN1212666C (zh) | 2005-07-27 |
TW200306574A (en) | 2003-11-16 |
CN100511472C (zh) | 2009-07-08 |
TW578153B (en) | 2004-03-01 |
CN1674149A (zh) | 2005-09-28 |
KR20030087902A (ko) | 2003-11-15 |
CN1674150A (zh) | 2005-09-28 |
US20030210577A1 (en) | 2003-11-13 |
KR100869985B1 (ko) | 2008-11-21 |
JP2003331577A (ja) | 2003-11-21 |
US6667913B2 (en) | 2003-12-23 |
CN100538880C (zh) | 2009-09-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN112912956B (zh) | 存储器装置中的写入训练 | |
US6563759B2 (en) | Semiconductor memory device | |
CN1212666C (zh) | 半导体存储器件 | |
US6212126B1 (en) | Semiconductor device including clock generation circuit capable of generating internal clock stably | |
US8536914B2 (en) | DLL including 2-phase delay line and duty correction circuit and duty correction method thereof | |
CN1577612A (zh) | 半导体存储装置和用于高频操作的模块 | |
JP2011180713A (ja) | 半導体メモリモジュール | |
US6600693B2 (en) | Method and circuit for driving quad data rate synchronous semiconductor memory device | |
US10535382B2 (en) | Semiconductor devices | |
TW201027556A (en) | Serial-connected memory system with output delay adjustment | |
US11467965B2 (en) | Processing-in-memory (PIM) device | |
US20070211556A1 (en) | Input latency control circuit, a semiconductor memory device including an input latency control circuit and method thereof | |
US6777976B2 (en) | Interface circuit and semiconductor device with the same | |
US20030161210A1 (en) | Control circuit for an S-DRAM | |
CN118056483A (zh) | 堆叠存储器装置中的经微调数据路径 | |
US11398816B2 (en) | Apparatuses and methods for adjusting a phase mixer circuit | |
Paris et al. | A 800 MB/s 72 Mb SLDRAM with digitally-calibrated DLL | |
US8854912B2 (en) | Semiconductor module including module control circuit and method for controlling the same | |
US8068383B2 (en) | Semiconductor integrated circuit having address control circuit | |
US11322186B2 (en) | Electronic devices executing active operation | |
JP2001331365A (ja) | メモリコントローラ及びシステム | |
US20230326495A1 (en) | Semiconductor apparatus and semiconductor system having independent data input/output period, and operating method of the semiconductor system | |
US20090274002A1 (en) | Semiconductor integrated circuit and method of processing address and command signals thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20081219 Address after: Tokyo, Japan Patentee after: Fujitsu Microelectronics Ltd. Address before: Kanagawa, Japan Patentee before: Fujitsu Ltd. |
|
ASS | Succession or assignment of patent right |
Owner name: FUJITSU MICROELECTRONICS CO., LTD. Free format text: FORMER OWNER: FUJITSU LIMITED Effective date: 20081219 |
|
C56 | Change in the name or address of the patentee |
Owner name: FUJITSU SEMICONDUCTOR CO., LTD. Free format text: FORMER NAME: FUJITSU MICROELECTRON CO., LTD. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Kanagawa Patentee after: FUJITSU MICROELECTRONICS Ltd. Address before: Kanagawa Patentee before: Fujitsu Microelectronics Ltd. |
|
CP02 | Change in the address of a patent holder |
Address after: Kanagawa Patentee after: Fujitsu Microelectronics Ltd. Address before: Tokyo, Japan Patentee before: Fujitsu Microelectronics Ltd. |
|
ASS | Succession or assignment of patent right |
Owner name: SUOSI FUTURE CO., LTD. Free format text: FORMER OWNER: FUJITSU SEMICONDUCTOR CO., LTD. Effective date: 20150515 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20150515 Address after: Kanagawa Patentee after: SOCIONEXT Inc. Address before: Kanagawa Patentee before: FUJITSU MICROELECTRONICS Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20050727 Termination date: 20201129 |
|
CF01 | Termination of patent right due to non-payment of annual fee |