CN1457093A - 固体摄象器件安装用封装件 - Google Patents

固体摄象器件安装用封装件 Download PDF

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CN1457093A
CN1457093A CN03122202A CN03122202A CN1457093A CN 1457093 A CN1457093 A CN 1457093A CN 03122202 A CN03122202 A CN 03122202A CN 03122202 A CN03122202 A CN 03122202A CN 1457093 A CN1457093 A CN 1457093A
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resin
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近藤政幸
宫田史也
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Mitsui Chemical Industry Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • HELECTRICITY
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    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
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    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

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Abstract

本发明提供一种小型且薄型、可以用简单的工序廉价地制造的固体摄象器件安装用封装件。该固体摄象器件安装用封装件是在底面有用于面朝下安装固体摄象器件的透光用开口部的箱型树脂制封装件中,由实现电导通的导电性金属板构成的导线的在开口部附近内底面侧露出一端部并弯曲,在上述箱型树脂制封装件的侧壁面上部露出另一端部,除导线的两端部以外的部分埋设在树脂中,从而形成3维电路。

Description

固体摄象器件安装用封装件
技术领域
本发明涉及用于将CCD(电荷耦合器件)或CMOS(互补型金属氧化物半导体)等固体摄象器件面朝下安装的形成3维电路的树脂性封装件。
背景技术
安装固体摄象器件的封装件历来使用如图1所示的树脂制中空封装件。这种封装件是将固体摄象器件安装在中空封装件的中空部后,由金属细线使内导线和固体摄象器件接合而通电,然后在中空部的上面粘接透明盖体,将中空部气密密封。
另一方面,近年来固体摄象器件收纳封装件迫切要求小型化、薄型化,因而开始用裸触头安装固体摄象器件。其中有应用图2所示的3维电路形成技术的MID(Molded Interconnect Device模制互連器件)方法的箱型成形体。该方法是使箱底部设开口部的成形体经注射成形法成形后,在该箱型成形体内侧的树脂表面部形成电路,然后,在开口部附近形成的电路部上面朝下安装固体摄象器件的方法。
其中由MID方法在树脂表面形成电路的方法有多种,例如在2次注射法的场合,是先注射成形可形成电路的树脂,接着将该成形品装入另一金属型内注射成形,作成为覆盖模外形。然后在可形成电路的树脂表面进行电镀处理以形成电路的方法。或者采用与上述方法不同的1次注射法,就是首先在树脂表面实施溅射的薄膜铜的蒸镀、或非电解镀的薄膜铜电镀后,涂布保护层,曝光·显象,铜蚀刻,剥离保护层,其后在电路形成部分镀镍、金的方法。
历来的树脂中空封装件,因为是在中空的封装件内安装固体摄象器件并用透明盖体使其成为气密密封的结构,所以整体大且厚。这样的形态不符合最近的小型化、薄型化的要求。另外,因用金属线接合摄象器件和内导线部分,在接合线部分漫反射的光会进入摄象器件而发生图象的紊乱。
另一方面,将固体摄象器件面朝下安装在由MD方法在树脂表面形成3维电路的成形体上的方法,因裸触头安装不需要中空封装件那样的筐体,所以具有可以使装置整体薄而小的优点。另外,因不采用由金属线的线接合,所以也就不会发生接合线部分的漫反射,因而图象也就不会发生紊乱。
但是,由MID方法在树脂成形体上形成3维电路的方法,采用2次注射法必须要2个成形金属模,而且在第1次注射可成形树脂电路后,为提高树脂界面的密合力,必须使树脂表面粗糙化。另一方面,虽然1次注射法仅需要1个成形金属模是其优点,但为形成电路要经过薄层电镀、涂布保护层,曝光·显象、铜蚀刻、剥离保护层等若干阶段的工序才能形成电路。因而无论哪种方法都具有因工序复杂而成本高的缺点。
发明内容
为了能够解决在制作小型、薄型固体图象装置方面存在的上述问题,本发明涉及形成3维电路的固体摄象器件安装用封装件,其特征在于,在底面具有用于面朝下安装固体摄象器件的透光用开口部的箱型树脂制封装件中,由实现电导通的导电性金属板构成的导线在开口部附近内底面侧露出一端部并弯曲,在上述箱型树脂制封装件的侧壁面上部露出另一端部,除导线的两端部以外的部分埋设在树脂中。
其中使用的导电性金属板一般可以将半导体密封中使用的导线框进行3维弯曲加工,在箱型树脂制封装件中形成电路。本方法使用导线框形成3维电路,因此不必经过MID方法那样的复杂工序而就能廉价制作。即,将弯曲导线部制成3维结构的导线框固定在成形金属型中后进行树脂成形,然后除去导线表面残留的薄树脂溢料后,切断延出树脂成形体端面的导线,使其由导线框分离,从而可以容易地得到固体摄象器件安装用树脂封装件。
其中搭装在箱型树脂制封装件上的固体摄象器件是CCD(电荷耦合器件)和CMOS(互补型金属氧化物半导体)等受光型半导体器件。
另外,在箱型树脂制封装件成形中使用的树脂,优选由环氧树脂、酚醛树脂、不饱和聚酯树脂、硅树脂等热固化性树脂,或者液晶聚合物、聚苯醚、聚亚苯基硫醚(PPS)树脂、聚砜、聚酰胺·亚胺·聚芳基砜树脂等耐热热塑性树脂或形。其中特别优选使用环氧树脂、聚亚胺树脂、PPS等。环氧树脂可以使用聚氨基双马来酸酐缩亚胺、聚苯均四酰亚胺、聚醚等聚酰亚胺树脂。
优选在这些耐热树脂中添加无机填料。作为无机填料可以举出硅石粉、氧化铝粉末、氮化硅粉末、氮化硼粉末、氧化钛粉末、碳化硅粉末、玻璃纤维、氧化铝纤维等耐热无机填料。其中,硅石粉末、氧化铝粉末、氮化硅粉末、氮化硼粉末成形后的收缩是各向同性收缩,因而更加优选。无机填料的粒径优选0.1~120μm,由成形时的流动性考虑更优选0.5~60μm。无机填料相对于耐热树脂100重量份,优选配合40~3200重量份,更优选为100~1150重量份。另外,除无机填料外,还可以含固化剂、固化促进剂及偶合剂。
导线优选以导线框的形式提供,希望由铜、铁、铝及它们的合金组成的组中选择、特别是由42合金或铜合金形成。该导线框不必再进行表面处理,但根据需要可以实施全面至部分的表面处理。例如可以施加金、银、镍、焊锡等镀层。
附图说明
图1是表示现有技术中空封装件的剖面图。
图2是在用MID方法制作的成形体上安装固体摄象器件的装置剖面图。
图3是本发明用的4个方向上有导线的导线框的平面图和剖面图。
图4是本发明用的2个方向上有导线的导线框的平面图。
图5是本发明用的2个方向上有导线的另一种导线框的平面图。
图6是用图3的导线框的本发明的箱型树脂制封装件的平面图和剖面图。
图7是用图4的导线框的本发明的箱型树脂制封装件的平面图和剖面图。
图8是用图5的导线框的本发明的无对向的2个侧壁面的树脂制封装件的平面图和剖面图。
图9是本发明的在开口部外底面侧形成圆筒状支座的树脂制封装件的部面图。
图10是本发明的在开口部外底面侧形成镜筒的树脂制封装件的剖面图。
图11是表示本发明的在箱型树脂制封装件上安装固体摄象器件的装置的剖面图。
图12是表示本发明的在开口部外底面侧形成圆筒状座的树脂制封装件上安装透镜、镜筒的固体摄象器件的装置的剖面图。
图13是表示本发明的在开口部外底面侧形成镜筒的树脂制封装件上安装透镜的固体摄象器件的装置的剖面图。
图中的符号说明如下:
1    固体摄象器件
2    内导线
3    树脂部
4    金属线
5    中空部
6    透明盖体
7    电路部
8    开口部
9    导线框
10   外导线
11   导线弯曲部
12   侧壁面
13   侧壁面上面
14   开口部内底面侧
15   开口部外底面侧
16   圆筒状支座
17   镜筒
18   突起电极
19   液态密封树脂
20   透镜镜筒
21   固定环
具体实施方式
以下根据附图说明本发明的实施方式。
首先,准备图3所示的在4个方向上有导线的导线框1。该导线框可以将42合金或铜合金构成的薄板状金属板加工成规定形状而得到。导线框1在图3所示的内导线2和外导线10的途中部11弯曲加工成台阶状变形。另外,该形状的导线也可以用图4、图5所示的在2个方向上有导线的导线框。
然后,使用图3所示的导线框1,形成图6所示的箱型树脂制封装件。在图4所示的2个方向上有导线的场合,形成图7所示的箱型树脂制封装件。另外,使用图5的导线,用没有由箱型形状的内底面立起的相对的2个侧面的成形金属型时,形成图8所示的树脂制封装件。另外,在箱型树脂制封装件的成形中用可以在开口部外底面侧形成圆筒状支座的成形金属型时,可形成图9所示的在开口部外底面侧有圆筒状支座的树脂制封装件。而如果用在开口部外底面侧有安装透镜用的镜筒形状的成形金属型时,就能够形成图10所示的树脂制封装件。
这些树脂制封装件的成形是将导线框1装在成形金属型中,在该金属型的型腔中使环氧树脂等连续自动成形或者注射成形而得到的。连续自动成形的条件因使用的树脂而异,但若以环氧树脂为例时,则通常在成形压力为5~30MPa、优选10~17MPa,温度为130~200℃、优选150~180℃,时间10~120秒、优选15~60秒的条件下进行加压、加热。另外,在注射成形时,通常在注射压力为5~100MPa、优选8~60MPa,成形温度为130~200℃、优选150~180℃,时间10~120秒、优选15~60秒的条件下成形。然后,在各自的成形方法中,可根据需要增加后固化。
通过上述成形,可以在开口部附近内底面侧形成内导线部,在箱型树脂制封装件的壁面上部形成外导线部。另外,成形时在内导线和外导线的表面上产生薄树脂溢料,可以用高压水等除去该树脂溢料。
接着,切断延出树脂最外周部的外导线,将其由导线本体切离,从而可以得到固体摄象器件安装用树脂制封装件。另外,外导线切断的位置可以是在箱型树脂制封装件侧壁面上方的面上树脂制封装件的最外周,也可以是由最外周向外方向的延出处。
以下说明将固体摄象器件安装在这样得到的固体摄象器件安装用箱型树脂制封装件上的顺序。首先,用导电性粘接剂将摄象部周边有突起电极的固体摄象器件面朝下安装在图6、图7、图8所示的箱型树脂制封装件的开口部内底面侧内导线部上。然后,用液态密封树脂将固体摄象器件和内导线部的间隙密封。接着,用密封剂将透明盖体粘接固定在开口部外底面侧,从而可以得到图11所示的小型而且薄的固体摄象器件安装装置。
在图9所示的树脂封装件开口部外底面侧设透镜镜筒安装用支座的树脂制封装件的情况下,也与上述同样面朝下安装固体摄象器件,然后将透明盖体粘接固定在开口部外底面侧,其后将透镜镜筒插入支座部,从而可以得到图12所示的透镜一体型固体摄象器件。透镜镜筒可以如图12所示在支座的内侧,也可以在外侧。本方式下,也可以在开口部外底面侧无透明盖体,通过直接安装透镜镜筒而气密密封。
另外,在图10所示的树脂封装件开口部外底面侧设透镜安装用镜筒的树脂制封装件的场合,也与上述同样将固体摄象器件安装在开口部内底面侧,然后将透明盖体粘接固定在开口部外底面侧,其后将透镜安装固定在镜筒上,从而可以得到图13所示的透镜一体型固体摄象器件。另外,本方式与上述方式同样,也可以在开口部外底面侧没有透明盖体。在这些开口部外底面侧有支座或镜筒的树脂制封装件的场合,具有固体摄象器件的中心和透镜中心的位置容易对合的优点。
将这样得到的箱型树脂制封装件的外导线部与外部的构成连接电路板的印刷电路板或者弹性布线板软钎料接合,可以制作摄象器件装置的封装件。
按照本发明,可以廉价地提供面朝下安装型的固体摄象器件安装用树脂制封装件。

Claims (3)

1.一种固体摄象器件安装用封装件,是在底面有用于面朝下安装固体摄象器件的透光用开口部的箱型树脂制封装件,其特征在于,由实现电导通的导电性金属板构成的导线在上述透光用开口部附近内底面侧露出一端部并弯曲,在上述箱型树脂制封装件的侧壁面上部露出另一端部,除导线的两端部以外的部分埋设在树脂中。
2.根据权利要求1所述的固体摄象器件安装用封装件,其特征在于,在上述箱型树脂制封装件中,由内底面立起的侧壁中没有相对的2个侧壁,导线由另外2个侧壁露出。
3.根据权利要求1或2所述的固体摄象器件安装用封装件,其特征在于,在上述箱型树脂制封装件的透光用开口部外底面侧,具有安装透镜镜筒用的圆筒状支座或者安装透镜用的镜筒。
CN03122202A 2002-05-07 2003-04-16 固体摄象器件安装用封装件 Pending CN1457093A (zh)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100433344C (zh) * 2004-02-02 2008-11-12 松下电器产业株式会社 光学器件
CN102983111A (zh) * 2011-09-02 2013-03-20 奥普蒂兹公司 图像传感器的阶梯式封装及其制造方法

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6297548B1 (en) 1998-06-30 2001-10-02 Micron Technology, Inc. Stackable ceramic FBGA for high thermal applications
SG106050A1 (en) * 2000-03-13 2004-09-30 Megic Corp Method of manufacture and identification of semiconductor chip marked for identification with internal marking indicia and protection thereof by non-black layer and device produced thereby
US7012315B1 (en) * 2000-11-01 2006-03-14 Micron Technology, Inc. Frame scale package using contact lines through the elements
FR2824953B1 (fr) * 2001-05-18 2004-07-16 St Microelectronics Sa Boitier semi-conducteur optique a lentille incorporee et blindage
US6939456B2 (en) * 2003-02-04 2005-09-06 Kingpak Technology Inc. Miniaturized image sensor module
US6940058B2 (en) * 2003-02-04 2005-09-06 Kingpak Technology, Inc. Injection molded image sensor module
TWI237358B (en) * 2003-06-27 2005-08-01 Hon Hai Prec Ind Co Ltd Packaging structure of imaging sensor
US20050046016A1 (en) * 2003-09-03 2005-03-03 Ken Gilleo Electronic package with insert conductor array
TW200514484A (en) * 2003-10-08 2005-04-16 Chung-Cheng Wang Substrate for electrical device and methods of fabricating the same
KR100541654B1 (ko) 2003-12-02 2006-01-12 삼성전자주식회사 배선기판 및 이를 이용한 고체 촬상용 반도체 장치
KR100609012B1 (ko) 2004-02-11 2006-08-03 삼성전자주식회사 배선기판 및 이를 이용한 고체 촬상용 반도체 장치
JP4324081B2 (ja) * 2004-11-22 2009-09-02 パナソニック株式会社 光学デバイス
US7514672B2 (en) * 2005-02-15 2009-04-07 Sumitomo Chemical Company, Limited Case for accommodating solid-state imaging device and solid-state imaging apparatus
CN100555643C (zh) * 2005-08-12 2009-10-28 鸿富锦精密工业(深圳)有限公司 影像感测芯片封装结构及应用该结构的数码相机模组
US7202140B1 (en) 2005-12-07 2007-04-10 Chartered Semiconductor Manufacturing, Ltd Method to fabricate Ge and Si devices together for performance enhancement
US20080203512A1 (en) * 2006-06-07 2008-08-28 Hon Hai Precision Industry Co., Ltd. Image sensor chip package
KR100790994B1 (ko) * 2006-08-01 2008-01-03 삼성전자주식회사 이미지 센서 패키지, 그 제조 방법 및 이미지 센서패키지를 포함하는 이미지 센서 모듈
US20080165257A1 (en) * 2007-01-05 2008-07-10 Micron Technology, Inc. Configurable pixel array system and method
US7812869B2 (en) * 2007-05-11 2010-10-12 Aptina Imaging Corporation Configurable pixel array system and method
SG149709A1 (en) * 2007-07-12 2009-02-27 Micron Technology Inc Microelectronic imagers and methods of manufacturing such microelectronic imagers
US7868471B2 (en) * 2007-09-13 2011-01-11 Stats Chippac Ltd. Integrated circuit package-in-package system with leads
US8120128B2 (en) * 2007-10-12 2012-02-21 Panasonic Corporation Optical device
US20090179290A1 (en) * 2008-01-15 2009-07-16 Huang Shuangwu Encapsulated imager packaging
SG142321A1 (en) * 2008-04-24 2009-11-26 Micron Technology Inc Pre-encapsulated cavity interposer
US8258526B2 (en) * 2008-07-03 2012-09-04 Samsung Led Co., Ltd. Light emitting diode package including a lead frame with a cavity
TWI394249B (zh) * 2008-11-04 2013-04-21 Unimicron Technology Corp 封裝基板結構及其製法
US20100116970A1 (en) * 2008-11-12 2010-05-13 Wen-Long Chou Photo detection device
US10074779B2 (en) * 2011-03-11 2018-09-11 Seoul Semiconductor Co., Ltd. LED module, method for manufacturing the same, and LED channel letter including the same
KR20120119395A (ko) * 2011-04-21 2012-10-31 삼성전자주식회사 발광소자 패키지 및 그 제조방법
US9197796B2 (en) * 2011-11-23 2015-11-24 Lg Innotek Co., Ltd. Camera module
US9496247B2 (en) 2013-08-26 2016-11-15 Optiz, Inc. Integrated camera module and method of making same
US10447900B2 (en) 2015-08-06 2019-10-15 Apple Inc. Camera module design with lead frame and plastic moulding
JP2017139258A (ja) * 2016-02-01 2017-08-10 ソニー株式会社 撮像素子パッケージ及び撮像装置
JP7024349B2 (ja) * 2017-11-24 2022-02-24 セイコーエプソン株式会社 センサーユニット、センサーユニットの製造方法、慣性計測装置、電子機器、および移動体

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5555334A (en) * 1993-10-07 1996-09-10 Hitachi, Ltd. Optical transmission and receiving module and optical communication system using the same
US5699073A (en) * 1996-03-04 1997-12-16 Motorola Integrated electro-optical package with carrier ring and method of fabrication
JP3364574B2 (ja) * 1997-02-07 2003-01-08 富士写真光機株式会社 内視鏡用撮像装置
US6396116B1 (en) * 2000-02-25 2002-05-28 Agilent Technologies, Inc. Integrated circuit packaging for optical sensor devices
JP4004705B2 (ja) 2000-02-29 2007-11-07 松下電器産業株式会社 撮像装置と撮像装置組立方法
US6384473B1 (en) * 2000-05-16 2002-05-07 Sandia Corporation Microelectronic device package with an integral window
US6569698B2 (en) * 2000-12-07 2003-05-27 Harvatek Corp. Focusing cup on a folded frame for surface mount optoelectric semiconductor package
JP4514948B2 (ja) 2000-12-28 2010-07-28 パナソニック株式会社 レンズ付き撮像素子モジュールの製造方法
JP2002305261A (ja) * 2001-01-10 2002-10-18 Canon Inc 電子部品及びその製造方法
JP3495008B2 (ja) 2001-03-16 2004-02-09 美▲キ▼科技股▲フン▼有限公司 固体撮像装置及びその製造方法
JP3646933B2 (ja) * 2001-11-22 2005-05-11 松下電器産業株式会社 固体撮像装置およびその製造方法
JP3773177B2 (ja) 2001-11-30 2006-05-10 松下電器産業株式会社 固体撮像装置およびその製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100433344C (zh) * 2004-02-02 2008-11-12 松下电器产业株式会社 光学器件
CN102983111A (zh) * 2011-09-02 2013-03-20 奥普蒂兹公司 图像传感器的阶梯式封装及其制造方法
CN102983111B (zh) * 2011-09-02 2015-08-19 奥普蒂兹公司 图像传感器的阶梯式封装及其制造方法

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