CN1446268A - 有机el元件的制造方法及装置 - Google Patents
有机el元件的制造方法及装置 Download PDFInfo
- Publication number
- CN1446268A CN1446268A CN01813994A CN01813994A CN1446268A CN 1446268 A CN1446268 A CN 1446268A CN 01813994 A CN01813994 A CN 01813994A CN 01813994 A CN01813994 A CN 01813994A CN 1446268 A CN1446268 A CN 1446268A
- Authority
- CN
- China
- Prior art keywords
- organic
- container
- electromagnetic induction
- organic materials
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 23
- 239000000463 material Substances 0.000 claims abstract description 66
- 238000010438 heat treatment Methods 0.000 claims abstract description 57
- 239000011368 organic material Substances 0.000 claims abstract description 47
- 230000005674 electromagnetic induction Effects 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 238000007740 vapor deposition Methods 0.000 claims abstract description 16
- 238000002309 gasification Methods 0.000 claims description 21
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 238000012856 packing Methods 0.000 claims description 7
- 238000001704 evaporation Methods 0.000 abstract description 32
- 239000010408 film Substances 0.000 abstract description 26
- 239000010409 thin film Substances 0.000 abstract description 7
- 230000008016 vaporization Effects 0.000 abstract description 2
- 239000000945 filler Substances 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 description 31
- 238000002485 combustion reaction Methods 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 238000009434 installation Methods 0.000 description 8
- 239000002994 raw material Substances 0.000 description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 239000007769 metal material Substances 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- 230000002349 favourable effect Effects 0.000 description 5
- -1 iron Chemical class 0.000 description 5
- 239000004411 aluminium Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 101100192157 Mus musculus Psen2 gene Proteins 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000006698 induction Effects 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 229940074869 marquis Drugs 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- VBUNOIXRZNJNAD-UHFFFAOYSA-N ponazuril Chemical compound CC1=CC(N2C(N(C)C(=O)NC2=O)=O)=CC=C1OC1=CC=C(S(=O)(=O)C(F)(F)F)C=C1 VBUNOIXRZNJNAD-UHFFFAOYSA-N 0.000 description 2
- 238000001149 thermolysis Methods 0.000 description 2
- 210000005239 tubule Anatomy 0.000 description 2
- 229910000859 α-Fe Inorganic materials 0.000 description 2
- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical compound C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 description 1
- 229910000975 Carbon steel Inorganic materials 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- RGSQSIIKJKUUBH-UHFFFAOYSA-N [Eu].C(C1=CC=CC=C1)(=O)C(C(C1=CC=CC=C1)=O)C1=NC2=C3N=CC=CC3=CC=C2C=C1 Chemical compound [Eu].C(C1=CC=CC=C1)(=O)C(C(C1=CC=CC=C1)=O)C1=NC2=C3N=CC=CC3=CC=C2C=C1 RGSQSIIKJKUUBH-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000010962 carbon steel Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 210000000078 claw Anatomy 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 150000004696 coordination complex Chemical class 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002366 halogen compounds Chemical class 0.000 description 1
- 229920006015 heat resistant resin Polymers 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- CTAPFRYPJLPFDF-UHFFFAOYSA-N isoxazole Chemical compound C=1C=NOC=1 CTAPFRYPJLPFDF-UHFFFAOYSA-N 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000002335 preservative effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 150000003464 sulfur compounds Chemical class 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/02—Induction heating
- H05B6/10—Induction heating apparatus, other than furnaces, for specific applications
- H05B6/105—Induction heating apparatus, other than furnaces, for specific applications using a susceptor
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (8)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP242164/2000 | 2000-08-10 | ||
JP242164/00 | 2000-08-10 | ||
JP2000242164 | 2000-08-10 | ||
JP196679/01 | 2001-06-28 | ||
JP2001196679 | 2001-06-28 | ||
JP196679/2001 | 2001-06-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1446268A true CN1446268A (zh) | 2003-10-01 |
CN1252312C CN1252312C (zh) | 2006-04-19 |
Family
ID=26597698
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB018139949A Expired - Fee Related CN1252312C (zh) | 2000-08-10 | 2001-08-09 | 有机el元件的制造方法及装置 |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP1354979A4 (zh) |
JP (1) | JP3929397B2 (zh) |
KR (1) | KR20030038689A (zh) |
CN (1) | CN1252312C (zh) |
AU (1) | AU2001277743A1 (zh) |
TW (1) | TWI254599B (zh) |
WO (1) | WO2002014575A1 (zh) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100446300C (zh) * | 2004-03-30 | 2008-12-24 | 日本东北先锋公司 | 成膜源、成膜装置及方法、有机el面板及其制造方法 |
CN101988185A (zh) * | 2010-12-14 | 2011-03-23 | 无锡虹彩科技发展有限公司 | 镀膜源、真空镀膜装置及其镀膜工艺 |
CN101641457B (zh) * | 2007-03-26 | 2012-04-25 | 株式会社爱发科 | 蒸镀源、蒸镀装置、成膜方法 |
CN105734496A (zh) * | 2014-12-30 | 2016-07-06 | 大永真空科技股份有限公司 | 有机真空涂布系统及薄膜形成方法 |
CN106973448A (zh) * | 2016-01-13 | 2017-07-21 | 张家港康得新光电材料有限公司 | 加热装置 |
CN111971411A (zh) * | 2018-03-28 | 2020-11-20 | 公益财团法人福冈县产业·科学技术振兴财团 | 蒸镀装置及有机电子器件的生产方法 |
CN113195781A (zh) * | 2018-12-19 | 2021-07-30 | Posco公司 | Pvd镀覆工艺中的镀层控制装置及方法 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003253434A (ja) * | 2002-03-01 | 2003-09-10 | Sanyo Electric Co Ltd | 蒸着方法及び表示装置の製造方法 |
JP3837344B2 (ja) * | 2002-03-11 | 2006-10-25 | 三洋電機株式会社 | 光学素子およびその製造方法 |
JP4139186B2 (ja) * | 2002-10-21 | 2008-08-27 | 東北パイオニア株式会社 | 真空蒸着装置 |
KR100761079B1 (ko) * | 2005-01-31 | 2007-09-21 | 삼성에스디아이 주식회사 | 냉각수단을 갖는 증발원 및 이를 이용한 증착 장치 |
JP4001296B2 (ja) | 2005-08-25 | 2007-10-31 | トッキ株式会社 | 有機材料の真空蒸着方法およびその装置 |
US20080166472A1 (en) * | 2006-12-13 | 2008-07-10 | Universal Display Corporation | Evaporation process for solid phase materials |
KR20180002505A (ko) * | 2016-06-29 | 2018-01-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 소자의 제작 방법 |
EP3822388A4 (en) * | 2018-03-28 | 2022-06-08 | Fukuoka Industry Science & Technology Foundation | VAPOR DEPOSITION APPARATUS AND METHOD FOR MAKING AN ORGANIC ELECTRONIC DEVICE |
KR20220124149A (ko) * | 2020-01-07 | 2022-09-13 | 어플라이드 머티어리얼스, 인코포레이티드 | 재료 증발을 위한 조립체, 진공 증착 장치, 및 재료 증발을 위한 방법 |
JP7350045B2 (ja) * | 2021-12-07 | 2023-09-25 | 長州産業株式会社 | 蒸着用坩堝、蒸着源及び蒸着装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57106759U (zh) * | 1980-12-18 | 1982-07-01 | ||
JPS5835927A (ja) * | 1981-08-28 | 1983-03-02 | Fujitsu Ltd | 半導体装置の製造方法 |
US4539507A (en) * | 1983-03-25 | 1985-09-03 | Eastman Kodak Company | Organic electroluminescent devices having improved power conversion efficiencies |
JP2889607B2 (ja) * | 1989-09-09 | 1999-05-10 | 株式会社瀬田技研 | 電磁誘導加熱装置および電磁誘導加熱方法 |
JPH04308076A (ja) * | 1991-04-03 | 1992-10-30 | Mitsubishi Heavy Ind Ltd | 昇華性物質真空蒸着装置 |
JPH08264272A (ja) * | 1995-03-27 | 1996-10-11 | Seta Giken:Kk | 電磁誘導加熱装置 |
JPH09329589A (ja) * | 1996-06-11 | 1997-12-22 | Dainippon Ink & Chem Inc | 有機低分子量化合物の抽出方法および有機低分子量化合物の分析方法 |
JP3691615B2 (ja) * | 1996-12-06 | 2005-09-07 | 株式会社アルバック | 有機材料用蒸発源 |
JP3453290B2 (ja) * | 1997-12-26 | 2003-10-06 | 松下電器産業株式会社 | 蒸着用電極構造、蒸着装置、蒸着方法および有機発光素子の製造方法 |
JP3175733B2 (ja) * | 1998-06-17 | 2001-06-11 | 日本電気株式会社 | 有機el素子の製造方法 |
-
2001
- 2001-08-09 AU AU2001277743A patent/AU2001277743A1/en not_active Abandoned
- 2001-08-09 JP JP2002519697A patent/JP3929397B2/ja not_active Expired - Fee Related
- 2001-08-09 WO PCT/JP2001/006874 patent/WO2002014575A1/ja active Application Filing
- 2001-08-09 EP EP01955636A patent/EP1354979A4/en not_active Withdrawn
- 2001-08-09 CN CNB018139949A patent/CN1252312C/zh not_active Expired - Fee Related
- 2001-08-09 KR KR10-2003-7001828A patent/KR20030038689A/ko active Search and Examination
- 2001-08-10 TW TW090119676A patent/TWI254599B/zh not_active IP Right Cessation
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100446300C (zh) * | 2004-03-30 | 2008-12-24 | 日本东北先锋公司 | 成膜源、成膜装置及方法、有机el面板及其制造方法 |
CN101641457B (zh) * | 2007-03-26 | 2012-04-25 | 株式会社爱发科 | 蒸镀源、蒸镀装置、成膜方法 |
CN101988185A (zh) * | 2010-12-14 | 2011-03-23 | 无锡虹彩科技发展有限公司 | 镀膜源、真空镀膜装置及其镀膜工艺 |
CN105734496A (zh) * | 2014-12-30 | 2016-07-06 | 大永真空科技股份有限公司 | 有机真空涂布系统及薄膜形成方法 |
CN106973448A (zh) * | 2016-01-13 | 2017-07-21 | 张家港康得新光电材料有限公司 | 加热装置 |
CN111971411A (zh) * | 2018-03-28 | 2020-11-20 | 公益财团法人福冈县产业·科学技术振兴财团 | 蒸镀装置及有机电子器件的生产方法 |
CN113195781A (zh) * | 2018-12-19 | 2021-07-30 | Posco公司 | Pvd镀覆工艺中的镀层控制装置及方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20030038689A (ko) | 2003-05-16 |
TWI254599B (en) | 2006-05-01 |
EP1354979A1 (en) | 2003-10-22 |
CN1252312C (zh) | 2006-04-19 |
WO2002014575A1 (en) | 2002-02-21 |
EP1354979A4 (en) | 2008-03-26 |
JP3929397B2 (ja) | 2007-06-13 |
AU2001277743A1 (en) | 2002-02-25 |
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