CN1437392A - 相关二次采样电路和包含该电路的cmos图象传感器 - Google Patents
相关二次采样电路和包含该电路的cmos图象传感器 Download PDFInfo
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- CN1437392A CN1437392A CN03101595A CN03101595A CN1437392A CN 1437392 A CN1437392 A CN 1437392A CN 03101595 A CN03101595 A CN 03101595A CN 03101595 A CN03101595 A CN 03101595A CN 1437392 A CN1437392 A CN 1437392A
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- 238000005070 sampling Methods 0.000 title claims abstract description 77
- 239000003990 capacitor Substances 0.000 claims description 72
- 239000011159 matrix material Substances 0.000 claims description 9
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 230000005693 optoelectronics Effects 0.000 claims description 5
- 239000007787 solid Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 238000012546 transfer Methods 0.000 abstract description 5
- 230000010354 integration Effects 0.000 abstract description 3
- 230000002596 correlated effect Effects 0.000 abstract 1
- 208000021075 Creatine deficiency syndrome Diseases 0.000 description 41
- 201000008609 cerebral creatine deficiency syndrome Diseases 0.000 description 41
- 101100041125 Arabidopsis thaliana RST1 gene Proteins 0.000 description 6
- 101100443250 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) DIG1 gene Proteins 0.000 description 6
- 238000012423 maintenance Methods 0.000 description 5
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- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
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- 230000003321 amplification Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/616—Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/65—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
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- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
Claims (7)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002030613A JP4251811B2 (ja) | 2002-02-07 | 2002-02-07 | 相関二重サンプリング回路とこの相関二重サンプリング回路を備えたcmosイメージセンサ |
JP030613/2002 | 2002-02-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1437392A true CN1437392A (zh) | 2003-08-20 |
CN1242608C CN1242608C (zh) | 2006-02-15 |
Family
ID=27654751
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB031015956A Expired - Fee Related CN1242608C (zh) | 2002-02-07 | 2003-01-15 | 相关二次采样电路和包含该电路的cmos图象传感器 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6977363B2 (zh) |
EP (1) | EP1343310B1 (zh) |
JP (1) | JP4251811B2 (zh) |
KR (1) | KR100864037B1 (zh) |
CN (1) | CN1242608C (zh) |
TW (1) | TW586315B (zh) |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7443436B2 (en) | 2004-04-13 | 2008-10-28 | Matsushita Electric Industrial Co., Ltd. | Image pickup system for preventing image darkening due to the entrance of intense light |
CN100546040C (zh) * | 2006-01-05 | 2009-09-30 | 株式会社东芝 | 固体摄影装置 |
CN101841666A (zh) * | 2009-03-16 | 2010-09-22 | 佳能株式会社 | 图像传感器和摄像设备 |
CN101197921B (zh) * | 2006-12-07 | 2010-11-03 | 比亚迪股份有限公司 | 一种图像信号采样电路及其方法 |
CN101305593B (zh) * | 2005-10-26 | 2010-12-08 | 伊斯曼柯达公司 | 用于校正掩食或变暗的方法 |
CN1943242B (zh) * | 2005-04-13 | 2010-12-15 | 松下电器产业株式会社 | 二次采样检测设备和方法以及二次采样设备和方法 |
US7956908B2 (en) | 2004-09-08 | 2011-06-07 | Crosstek Capital, LLC | Read-out circuit of image sensor |
CN101742131B (zh) * | 2008-11-25 | 2011-07-20 | 上海华虹Nec电子有限公司 | Cmos图像传感器的光电转换器 |
CN101193203B (zh) * | 2006-11-29 | 2011-09-14 | 全视科技有限公司 | 具有输出噪声降低机制的图像传感器 |
CN101674416B (zh) * | 2008-09-11 | 2012-01-04 | 深圳市奥尼克斯实业有限公司 | 一种低照度摄像机降低噪声提升增益的方法 |
CN101668120B (zh) * | 2008-09-01 | 2013-01-09 | 佳能株式会社 | 摄像装置 |
CN104137421A (zh) * | 2012-03-01 | 2014-11-05 | 株式会社尼康 | A/d转换电路及固体成像装置 |
CN103037175B (zh) * | 2011-10-06 | 2016-09-28 | Fei公司 | 用于用图像传感器来获取数据的方法 |
WO2021138838A1 (zh) * | 2020-01-08 | 2021-07-15 | 华为技术有限公司 | 一种图像读取电路、图像传感器以及终端设备 |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100411307B1 (ko) * | 2002-03-12 | 2003-12-24 | 주식회사 하이닉스반도체 | 자동으로 리셋 전압을 제한하는 기능을 갖는 이미지센서및 이미지센서의 리셋 전압 자동 제어 방법 |
JP2005012752A (ja) * | 2003-02-26 | 2005-01-13 | Seiko Instruments Inc | 信号処理回路、イメージセンサーicおよび信号処理方法 |
KR100523233B1 (ko) | 2003-08-23 | 2005-10-24 | 삼성전자주식회사 | 씨모스 이미지 센서 및 이미지 센싱 방법 |
US7501669B2 (en) | 2003-09-09 | 2009-03-10 | Cree, Inc. | Wide bandgap transistor devices with field plates |
US7446806B2 (en) * | 2003-12-19 | 2008-11-04 | Symbol Technologies, Inc. | Single chip, noise-resistant, one-dimensional, CMOS sensor for target imaging |
KR100644032B1 (ko) | 2004-04-21 | 2006-11-10 | 매그나칩 반도체 유한회사 | 고속 아날로그신호 처리를 위한 cmos 이미지센서 |
JP2005312025A (ja) * | 2004-04-21 | 2005-11-04 | Magnachip Semiconductor Ltd | 高速アナログ信号処理可能なcmosイメージセンサ |
KR100585005B1 (ko) * | 2004-05-06 | 2006-05-29 | 매그나칩 반도체 유한회사 | 셋틀링 타임을 줄인 시디에스 회로 |
KR100660858B1 (ko) | 2005-01-28 | 2006-12-26 | 삼성전자주식회사 | 선 블랙 현상을 방지하는 시모스 이미지 센서의 칼럼 adc |
KR100775009B1 (ko) | 2005-08-03 | 2007-11-09 | 한국과학기술원 | 상관 이중 샘플링 회로 및 이를 구비한 시모스 이미지 센서 |
KR100719370B1 (ko) * | 2005-08-03 | 2007-05-17 | 삼성전자주식회사 | 아날로그-디지털 변환기 및 이를 포함하는 씨모스 이미지센서, 그리고 씨모스 이미지 센서의 동작 방법 |
US7864229B2 (en) | 2005-12-08 | 2011-01-04 | Samsung Electronics Co., Ltd. | Analog to digital converting device and image pickup device for canceling noise, and signal processing method thereof |
KR100746197B1 (ko) | 2005-12-08 | 2007-08-06 | 삼성전자주식회사 | 공급 전원 및 스위칭 노이즈를 제거할 수 있는 이미지센서의 기준 전압 발생기, 칼럼 아날로그-디지털 변환장치, 이미지 센서, 및 칼럼 아날로그-디지털 변환방법 |
JP4887079B2 (ja) * | 2006-06-06 | 2012-02-29 | 富士フイルム株式会社 | 光電変換膜積層型固体撮像素子 |
US8203629B2 (en) * | 2006-10-26 | 2012-06-19 | Canon Kabushiki Kaisha | Image sensing apparatus and correction method |
JP4305507B2 (ja) * | 2006-12-18 | 2009-07-29 | ソニー株式会社 | 撮像装置およびカメラ |
EP2075909A3 (en) | 2007-12-26 | 2016-10-12 | TPO Displays Corp. | Current sampling method and circuit |
TWI375465B (en) | 2008-02-27 | 2012-10-21 | Pixart Imaging Inc | Correlation double sampling circuit for image sensor |
KR101566406B1 (ko) * | 2008-10-22 | 2015-11-16 | 삼성전자주식회사 | 이미지센서 불량검출방법 및 상기 방법을 사용하는 이미지센서 |
KR101029619B1 (ko) * | 2009-12-30 | 2011-04-15 | 주식회사 하이닉스반도체 | Cmos 이미지 센서 |
KR101241471B1 (ko) * | 2011-04-11 | 2013-03-11 | 엘지이노텍 주식회사 | 픽셀, 픽셀 어레이, 픽셀 어레이를 포함하는 이미지센서 및 이미지센서의 구동방법 |
JP6459025B2 (ja) * | 2014-07-07 | 2019-01-30 | パナソニックIpマネジメント株式会社 | 固体撮像装置 |
US20180098015A1 (en) * | 2015-04-14 | 2018-04-05 | Center For Integrated Smart Sensors Foundation | Method and apparatus for embodying adc and pga using common amplifier |
US9762824B2 (en) * | 2015-12-30 | 2017-09-12 | Raytheon Company | Gain adaptable unit cell |
WO2024076130A1 (ko) * | 2022-10-05 | 2024-04-11 | 삼성전자 주식회사 | 카메라를 포함하는 전자 장치 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH06326933A (ja) * | 1993-03-17 | 1994-11-25 | Sharp Corp | 撮像装置 |
JP3351192B2 (ja) * | 1995-07-12 | 2002-11-25 | 富士ゼロックス株式会社 | 画像読取信号処理装置 |
US6166766A (en) * | 1997-09-03 | 2000-12-26 | Motorola, Inc. | Sensing circuit for capturing a pixel signal |
JP4098884B2 (ja) * | 1998-07-08 | 2008-06-11 | 浜松ホトニクス株式会社 | 固体撮像装置 |
EP0986250B1 (en) * | 1998-09-10 | 2004-03-17 | Agilent Technologies, Inc. (a Delaware corporation) | Photodiode array |
WO2001026382A1 (en) * | 1999-10-05 | 2001-04-12 | California Institute Of Technology | Time-delayed-integration imaging with active pixel sensors |
KR20020038047A (ko) * | 2000-11-16 | 2002-05-23 | 윤종용 | 영상 신호 처리 장치의 오프셋 보정 회로 |
JP4187502B2 (ja) * | 2002-07-25 | 2008-11-26 | 富士通マイクロエレクトロニクス株式会社 | 画質を向上させたイメージセンサ |
-
2002
- 2002-02-07 JP JP2002030613A patent/JP4251811B2/ja not_active Expired - Fee Related
- 2002-12-27 TW TW091137708A patent/TW586315B/zh not_active IP Right Cessation
-
2003
- 2003-01-02 US US10/337,436 patent/US6977363B2/en not_active Expired - Fee Related
- 2003-01-10 EP EP03250166A patent/EP1343310B1/en not_active Expired - Lifetime
- 2003-01-15 CN CNB031015956A patent/CN1242608C/zh not_active Expired - Fee Related
- 2003-01-15 KR KR1020030002601A patent/KR100864037B1/ko active IP Right Grant
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7443436B2 (en) | 2004-04-13 | 2008-10-28 | Matsushita Electric Industrial Co., Ltd. | Image pickup system for preventing image darkening due to the entrance of intense light |
US7956908B2 (en) | 2004-09-08 | 2011-06-07 | Crosstek Capital, LLC | Read-out circuit of image sensor |
CN1943242B (zh) * | 2005-04-13 | 2010-12-15 | 松下电器产业株式会社 | 二次采样检测设备和方法以及二次采样设备和方法 |
CN101305593B (zh) * | 2005-10-26 | 2010-12-08 | 伊斯曼柯达公司 | 用于校正掩食或变暗的方法 |
CN100546040C (zh) * | 2006-01-05 | 2009-09-30 | 株式会社东芝 | 固体摄影装置 |
CN101193203B (zh) * | 2006-11-29 | 2011-09-14 | 全视科技有限公司 | 具有输出噪声降低机制的图像传感器 |
CN101197921B (zh) * | 2006-12-07 | 2010-11-03 | 比亚迪股份有限公司 | 一种图像信号采样电路及其方法 |
CN101668120B (zh) * | 2008-09-01 | 2013-01-09 | 佳能株式会社 | 摄像装置 |
CN102984457A (zh) * | 2008-09-01 | 2013-03-20 | 佳能株式会社 | 摄像装置 |
CN102984457B (zh) * | 2008-09-01 | 2014-08-06 | 佳能株式会社 | 摄像装置 |
CN101674416B (zh) * | 2008-09-11 | 2012-01-04 | 深圳市奥尼克斯实业有限公司 | 一种低照度摄像机降低噪声提升增益的方法 |
CN101742131B (zh) * | 2008-11-25 | 2011-07-20 | 上海华虹Nec电子有限公司 | Cmos图像传感器的光电转换器 |
CN101841666A (zh) * | 2009-03-16 | 2010-09-22 | 佳能株式会社 | 图像传感器和摄像设备 |
CN103037175B (zh) * | 2011-10-06 | 2016-09-28 | Fei公司 | 用于用图像传感器来获取数据的方法 |
CN104137421A (zh) * | 2012-03-01 | 2014-11-05 | 株式会社尼康 | A/d转换电路及固体成像装置 |
CN104137421B (zh) * | 2012-03-01 | 2016-09-28 | 株式会社尼康 | A/d转换电路及固体成像装置 |
WO2021138838A1 (zh) * | 2020-01-08 | 2021-07-15 | 华为技术有限公司 | 一种图像读取电路、图像传感器以及终端设备 |
CN114982222A (zh) * | 2020-01-08 | 2022-08-30 | 华为技术有限公司 | 一种图像读取电路、图像传感器以及终端设备 |
Also Published As
Publication number | Publication date |
---|---|
TW586315B (en) | 2004-05-01 |
EP1343310A2 (en) | 2003-09-10 |
EP1343310A3 (en) | 2005-01-05 |
JP4251811B2 (ja) | 2009-04-08 |
EP1343310B1 (en) | 2013-03-27 |
JP2003234962A (ja) | 2003-08-22 |
CN1242608C (zh) | 2006-02-15 |
KR100864037B1 (ko) | 2008-10-16 |
US6977363B2 (en) | 2005-12-20 |
US20030146369A1 (en) | 2003-08-07 |
TW200303142A (en) | 2003-08-16 |
KR20030067490A (ko) | 2003-08-14 |
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