WO2001026382A1 - Time-delayed-integration imaging with active pixel sensors - Google Patents
Time-delayed-integration imaging with active pixel sensors Download PDFInfo
- Publication number
- WO2001026382A1 WO2001026382A1 PCT/US2000/027746 US0027746W WO0126382A1 WO 2001026382 A1 WO2001026382 A1 WO 2001026382A1 US 0027746 W US0027746 W US 0027746W WO 0126382 A1 WO0126382 A1 WO 0126382A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- pixel
- array
- integrator
- signal
- sensing
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/48—Increasing resolution by shifting the sensor relative to the scene
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N9/00—Details of colour television systems
- H04N9/03—Circuitry for demodulating colour component signals modulated spatially by colour striped filters by frequency separation
Definitions
- One class of solid-state image sensors includes an array of active pixel sensors (APS) formed on a semiconductor substrate.
- An APS is a light sensing device with sensing circuitry inside each pixel.
- Each active pixel includes a sensing element formed in a semiconductor substrate and capable of converting optical signals into electronic signals.
- photons strike the surface of a photoactive region within each active pixel, free charge carriers are generated and collected. Once collected, the charge carriers are converted into an electrical signal within each pixel.
- CCD charge coupled device
- MOS metal oxide semiconductor
- the prolonged exposure imaging is not feasible because the captured image can be "smeared" when the exposure time is too long and the photons from one location of the object are collected by two or more adjacent pixels along the direction of the relative motion.
- the simple addition of multiple frames suffers the smearing problem since different frames are taken at different times and the image of the object has moved from one location one the sensing array to another location during that time.
- the present time-delayed integration modifies the above integration of multiple frames to add pixel signals from different sensing pixels in different frames that correspond to the same image to produce the proper integrated image. In another perspective, multiple frames are also taken here.
- the APS array 110 may be formed by any suitable APS design.
- Each APS sensing pixel includes a photoactive element, such as a photogate or a photodiode, to collect photons and to produce charge in response to the collected photons. The charge is then transferred to an in-pixel circuit which internally converts the charge into a pixel electrical signal.
- the in-pixel circuit may include an isolated diffusion region and a transfer gate located between the photoactive element and the diffusion region. The diffusion region receives the charge and sends a corresponding electrical signal to a pixel amplifier for further processing.
- the APS array 110 may be formed CMOS-compatible active pixel sensors integrated on a semiconductor substrate.
- the signal from a pixel in a given row k is added to the contents of an integrator in a given row j of the same column. Since it takes n integrations to produce one line image of the object, the pixel values need be sampled at a sampling rate n times faster than the frame rate in order to provide a line image for every frame. Thus, during a given frame time, one row of integrators have accumulated the signal from all the n previous frame and are ready to be read out.
- the column-parallel design can limit the physical size for each integrator in the array 120 to the size of the APS sensing pixel (e.g., a pitch of about 10 microns) . This physical limitation can make it difficult to implement a low-noise but high-speed integrator.
- One feature of the device 100 is to implement a special integrator array 120 so that signal processing for one pixel in a column temporarily overlaps with signal processing for adjacent pixels.
- K -K +2-v cm+ 3-v; ff+ a v; ff -v cm )+ ⁇ + ⁇ ⁇
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001529217A JP2003511920A (en) | 1999-10-05 | 2000-10-05 | Time-delay integration imaging with active pixel sensors |
AU10749/01A AU1074901A (en) | 1999-10-05 | 2000-10-05 | Time-delayed-integration imaging with active pixel sensors |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15788599P | 1999-10-05 | 1999-10-05 | |
US60/157,885 | 1999-10-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2001026382A1 true WO2001026382A1 (en) | 2001-04-12 |
WO2001026382A9 WO2001026382A9 (en) | 2002-12-05 |
Family
ID=22565700
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2000/027746 WO2001026382A1 (en) | 1999-10-05 | 2000-10-05 | Time-delayed-integration imaging with active pixel sensors |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP2003511920A (en) |
KR (1) | KR100434806B1 (en) |
AU (1) | AU1074901A (en) |
WO (1) | WO2001026382A1 (en) |
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1545119A1 (en) * | 2003-12-17 | 2005-06-22 | Hitachi Software Engineering Co., Ltd. | Image reading apparatus and image reading method |
JP2008241718A (en) * | 2001-06-22 | 2008-10-09 | Orbotech Ltd | High-sensitivity optical scanning using memory integration |
WO2009058092A1 (en) * | 2007-11-01 | 2009-05-07 | Sectra Mamea Ab | X-ray detector |
US7808537B2 (en) | 2006-09-07 | 2010-10-05 | Canon Kabushiki Kaisha | Photoelectric conversion apparatus with fully differential amplifier |
US7932752B2 (en) | 2005-11-08 | 2011-04-26 | Panasonic Corporation | Correlated double sampling circuit and sample hold circuit |
WO2011069880A1 (en) | 2009-12-09 | 2011-06-16 | E2V Semiconductors | Charge-integration multilinear image sensor |
WO2011138374A1 (en) | 2010-05-04 | 2011-11-10 | E2V Semiconductors | Image sensor having a sampler array |
WO2011144459A1 (en) | 2010-05-18 | 2011-11-24 | E2V Semiconductors | Matrix charge-transfer image sensor with asymmetric gate |
EP2482317A1 (en) | 2011-01-28 | 2012-08-01 | E2V Semiconductors | Multilinear image sensor with load integration |
WO2013164169A1 (en) | 2012-05-03 | 2013-11-07 | E2V Semiconductors | Matrix image sensor providing bidirectional charge transfer with asymmetric gates |
US9024242B2 (en) | 2010-05-13 | 2015-05-05 | Konica Minolta Business Technologies, Inc. | Solid-state image pickup device, image pickup apparatus, and driving method |
CN105043539A (en) * | 2014-04-23 | 2015-11-11 | 罗伯特·博世有限公司 | A method and device for operating photodetector |
WO2016188778A1 (en) | 2015-05-28 | 2016-12-01 | E2V Semiconductors | Charge-transfer image sensor having double gate implantation |
CN110720048A (en) * | 2017-06-08 | 2020-01-21 | 罗伯特·博世有限公司 | Operating method and control unit for a lidar system, lidar system and work apparatus |
DE102011052874B4 (en) | 2010-11-30 | 2021-08-05 | X-Scan Imaging Corp. | CMOS TDI sensor for the application of X-ray imaging processes |
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JP4251811B2 (en) * | 2002-02-07 | 2009-04-08 | 富士通マイクロエレクトロニクス株式会社 | Correlated double sampling circuit and CMOS image sensor having the correlated double sampling circuit |
US7154075B2 (en) * | 2003-11-13 | 2006-12-26 | Micron Technology, Inc. | Method and apparatus for pixel signal binning and interpolation in column circuits of a sensor circuit |
JP4680640B2 (en) * | 2005-03-16 | 2011-05-11 | 株式会社リコー | Image input apparatus and image input method |
WO2007135161A1 (en) * | 2006-05-23 | 2007-11-29 | Thomson Licensing | Image sensor circuit |
FR2906080B1 (en) * | 2006-09-19 | 2008-11-28 | E2V Semiconductors Soc Par Act | SCALING IMAGE SENSOR WITH SUCCESSIVE INTEGRATIONS AND SOMMATION, WITH ACTIVE CMOS PIXELS |
KR100931859B1 (en) * | 2007-10-18 | 2009-12-15 | 주식회사 힘스 | Wafer Inspection Camera |
JP5151507B2 (en) * | 2008-01-29 | 2013-02-27 | ソニー株式会社 | Solid-state imaging device, signal readout method of solid-state imaging device, and imaging apparatus |
US8644376B2 (en) * | 2010-09-30 | 2014-02-04 | Alcatel Lucent | Apparatus and method for generating compressive measurements of video using spatial and temporal integration |
KR101220883B1 (en) * | 2011-01-21 | 2013-01-29 | 주식회사 룩센테크놀러지 | X-ray readout integrated circuit and method for detecting x-rays with adjustable amplification gain and x-ray sensor using the same |
Citations (5)
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US5886659A (en) * | 1996-08-21 | 1999-03-23 | California Institute Of Technology | On-focal-plane analog-to-digital conversion for current-mode imaging devices |
US5909026A (en) * | 1996-11-12 | 1999-06-01 | California Institute Of Technology | Integrated sensor with frame memory and programmable resolution for light adaptive imaging |
US5949483A (en) * | 1994-01-28 | 1999-09-07 | California Institute Of Technology | Active pixel sensor array with multiresolution readout |
US5965871A (en) * | 1997-11-05 | 1999-10-12 | Pixart Technology, Inc. | Column readout multiplexer for CMOS image sensors with multiple readout and fixed pattern noise cancellation |
US6115065A (en) * | 1995-11-07 | 2000-09-05 | California Institute Of Technology | Image sensor producing at least two integration times from each sensing pixel |
-
2000
- 2000-10-05 JP JP2001529217A patent/JP2003511920A/en active Pending
- 2000-10-05 KR KR10-2002-7004428A patent/KR100434806B1/en active IP Right Grant
- 2000-10-05 AU AU10749/01A patent/AU1074901A/en not_active Abandoned
- 2000-10-05 WO PCT/US2000/027746 patent/WO2001026382A1/en active IP Right Grant
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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US5949483A (en) * | 1994-01-28 | 1999-09-07 | California Institute Of Technology | Active pixel sensor array with multiresolution readout |
US6115065A (en) * | 1995-11-07 | 2000-09-05 | California Institute Of Technology | Image sensor producing at least two integration times from each sensing pixel |
US5886659A (en) * | 1996-08-21 | 1999-03-23 | California Institute Of Technology | On-focal-plane analog-to-digital conversion for current-mode imaging devices |
US5909026A (en) * | 1996-11-12 | 1999-06-01 | California Institute Of Technology | Integrated sensor with frame memory and programmable resolution for light adaptive imaging |
US5965871A (en) * | 1997-11-05 | 1999-10-12 | Pixart Technology, Inc. | Column readout multiplexer for CMOS image sensors with multiple readout and fixed pattern noise cancellation |
Cited By (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008241718A (en) * | 2001-06-22 | 2008-10-09 | Orbotech Ltd | High-sensitivity optical scanning using memory integration |
JP2008275611A (en) * | 2001-06-22 | 2008-11-13 | Orbotech Ltd | High-sensitivity optical scanning using memory integration |
EP1545119A1 (en) * | 2003-12-17 | 2005-06-22 | Hitachi Software Engineering Co., Ltd. | Image reading apparatus and image reading method |
US7932752B2 (en) | 2005-11-08 | 2011-04-26 | Panasonic Corporation | Correlated double sampling circuit and sample hold circuit |
US7808537B2 (en) | 2006-09-07 | 2010-10-05 | Canon Kabushiki Kaisha | Photoelectric conversion apparatus with fully differential amplifier |
WO2009058092A1 (en) * | 2007-11-01 | 2009-05-07 | Sectra Mamea Ab | X-ray detector |
WO2011069880A1 (en) | 2009-12-09 | 2011-06-16 | E2V Semiconductors | Charge-integration multilinear image sensor |
WO2011138374A1 (en) | 2010-05-04 | 2011-11-10 | E2V Semiconductors | Image sensor having a sampler array |
FR2959901A1 (en) * | 2010-05-04 | 2011-11-11 | E2V Semiconductors | IMAGE SENSOR WITH SAMPLE MATRIX |
CN102870407B (en) * | 2010-05-04 | 2017-03-01 | E2V半导体公司 | There is the imageing sensor of sampler array |
US8982262B2 (en) | 2010-05-04 | 2015-03-17 | E2V Semiconductors | Image sensor having a sampler array |
US9024242B2 (en) | 2010-05-13 | 2015-05-05 | Konica Minolta Business Technologies, Inc. | Solid-state image pickup device, image pickup apparatus, and driving method |
WO2011144459A1 (en) | 2010-05-18 | 2011-11-24 | E2V Semiconductors | Matrix charge-transfer image sensor with asymmetric gate |
DE102011052874B4 (en) | 2010-11-30 | 2021-08-05 | X-Scan Imaging Corp. | CMOS TDI sensor for the application of X-ray imaging processes |
EP2482317A1 (en) | 2011-01-28 | 2012-08-01 | E2V Semiconductors | Multilinear image sensor with load integration |
US9093353B2 (en) | 2012-05-03 | 2015-07-28 | E2V Semiconductors | Matrix image sensor providing bidirectional charge transfer with asymmetric gates |
WO2013164169A1 (en) | 2012-05-03 | 2013-11-07 | E2V Semiconductors | Matrix image sensor providing bidirectional charge transfer with asymmetric gates |
CN105043539A (en) * | 2014-04-23 | 2015-11-11 | 罗伯特·博世有限公司 | A method and device for operating photodetector |
WO2016188778A1 (en) | 2015-05-28 | 2016-12-01 | E2V Semiconductors | Charge-transfer image sensor having double gate implantation |
CN110720048A (en) * | 2017-06-08 | 2020-01-21 | 罗伯特·博世有限公司 | Operating method and control unit for a lidar system, lidar system and work apparatus |
CN110720048B (en) * | 2017-06-08 | 2023-10-10 | 罗伯特·博世有限公司 | Operation method and control unit for laser radar system, laser radar system and operation device |
Also Published As
Publication number | Publication date |
---|---|
AU1074901A (en) | 2001-05-10 |
KR20020056896A (en) | 2002-07-10 |
KR100434806B1 (en) | 2004-06-07 |
WO2001026382A9 (en) | 2002-12-05 |
JP2003511920A (en) | 2003-03-25 |
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