CN1428830A - 一种具有散热片的半导体封装 - Google Patents

一种具有散热片的半导体封装 Download PDF

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CN1428830A
CN1428830A CN 01139258 CN01139258A CN1428830A CN 1428830 A CN1428830 A CN 1428830A CN 01139258 CN01139258 CN 01139258 CN 01139258 A CN01139258 A CN 01139258A CN 1428830 A CN1428830 A CN 1428830A
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陆昕
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Weiyu Science & Technology Test Package (shanghai) Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
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    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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    • H01L2924/3025Electromagnetic shielding

Abstract

半导体封装方式,包括:一芯片、一基板、塑封体、连通芯片电路与基板电路的金线、连接外电路的锡球。一散热片,加装在芯片上方,下端粘接于基板之上,固定于塑封体之中。它将芯片产生的热迅速发散,防止芯片温度过高。散热片由导热材料制成,具有凸台、侧壁开口、底部缺口及顶端环形槽等结构。具有促进注塑、固定位置、防止溢胶等作用。

Description

一种具有散热片的半导体封装
(一)技术领域:本发明涉及一种半导体封装方法,特别涉及一种提高芯片散热性能的半导体封装方法。
(二)背景技术:下面,参照附图对现有的半导体封装进行说明。
图一示出了现有的常规球栅阵列半导体封装方式剖面结构,图二示出了现有的常规球栅阵列半导体封装方式平面结构,该封装包括:
通过银浆或其它粘结剂2将芯片1粘结到基板3上方,通过金线4将芯片的内电路与基板电路连接。基板电路由上下两层布线组成,布线之间由带有金属渡层的过孔连通。上层布线与金线连接,下层电路有焊盘暴露在外。将芯片和金线用塑封料5密封起来。基板下面焊盘上焊接锡球6作为输入和输出端,将基板电路、芯片电路与外电路连接起来。
在集成电路的封装领域,随着集成电路的密集程度在不断的增加,同时封装尺寸在不断变小,导致芯片产生的热量就越来越集中。封装中的散热问题就越发关键。现有的封装形式由于塑封料的导热系数不高,芯片产生的热不能及时散发出去,导致了芯片温度容易过高,降低了芯片能够支持的功率。而有些封装形式虽然能够提高散热性能,但成本很高。
(三)发明内容:
本发明的目的在于提供一种加装散热装置的半导体封装方式,实现低成本提升产品的散热性能。
本发明的另一目的在于并通过结构的特殊设计,能够防止塑封料在塑封过程中溢到散热片的外露的顶端影响芯片散热性能。
为了达到上述目的,本发明所采用的封装结构是:
用粘接剂将芯片粘接到基板上,通过金线连通芯片电路和基板电路。在基板上粘结一散热装置——散热片。然后再用塑封胶把芯片、金线、散热片等塑封起来。散热片的工作部分布置在芯片上方,高度与塑封体高度相同,其上表面暴露在空气中。散热片能将芯片产生的热快速发散,使整个芯片得到迅速冷却,防止芯片温度过高。基板下焊有锡球,将基板电路与外电路连通。散热片与基板的连接部分采用了若干向下的突起,使散热片的下部与基板之间形成一定的间隙,在注塑过程中,空气能够通过间隙排出,塑封料也能够通过此间隙充满散热片下面的空腔。在散热片的下部边缘制作若干缺口,在注塑过程中当受到来自模具上表面的压力时,缺口处产生微小变形,从而降低侧壁受到的应力。散热片的侧壁上有若干开口,注塑过程中塑封料可以顺利的通过这些开口灌入散热片下面的空腔,空气也可以由此开口顺利排出,防止空洞和气穴的产生。在散热片的顶端边缘处采用一环形槽的结构,在塑封过程中,通过一个凸起减慢塑封料的流速,然后用一个较大的容腔容纳漫过凸起部分的塑封胶,并使塑封胶在高温下快速固化,从而防止溢胶情况的发生。
(四)附图说明:
为使本发明之目的、特征及功效能有更进一步的认识与了解现结合附图详细说明如后:
图1为公知技术之球栅阵列半导体封装剖面结构图;
图2为公知技术之球栅阵列半导体封装外观图;
图3为加装散热片的球栅阵列半导体封装剖面结构图;
图4为加装散热片的球栅阵列半导体封装外观图;
图5为散热片的一种具体化形式的结构图;
图6为图5所示散热片的A-A向剖面结构图;
图7为散热片受压时缺口处产生变形减小应力的示意图;
图8为散热片顶端边缘处以具体化的槽状的剖面结构及作用原理图。
本发明在传统球栅阵列半导体封装形式基础上在塑封体5内埋入散热片7(图3),散热片的底部有若干凸起8,在基板上3相应的位置要施加粘结剂9,这若干个凸起8就是散热片7与基板3相连接的地方。这若干个凸台也保证了散热片的下沿10与基板之间留有一定的间隙11,允许塑封料5在注塑的过程中能够顺利的流入并充满散热片内部的空腔12。塑封后,散热片的顶部13将暴露在空气中(图4),与塑封体顶端14的高度相同。由于散热片由导热性能好的材料(铜、铝等)制成,采用了这样的结构,芯片产生的热量就可以通过散热片快速地发散到空气中。散热片的凸台8旁边有若干通孔15(图5),当注塑的过程中,塑封料流过通孔,能够加强散热片体与塑封体之间的结合力,使散热片定位更加牢固。散热片的底部10,有若干缺口16。其主要作用就是当塑封过程中,散热片会受到来自模腔上表面的压力。有了这些缺口,散热片受压时就能够在这些有缺口的地方产生变形,吸收一部分应力,避免因模压过大而造成散热片压溃(图7)。在散热片的侧壁上有若干开口17,这些开口保证了塑封料可以通过,并顺利充满整个散热片与基板之间的空腔12,同时空腔中的空气也可以通过这些开口位置排出,避免了空穴和气孔的发生。在散热片顶端边缘处21,有一圈环形的槽18,其截面可以如(图8)所示,也可以有其他的形式。对于如(图8)的截面结构,在槽的旁边会有一个小的凸起19,凸起与散热片的最高位置之间的距离20很小。如果不采用特殊的结构,在通常的注塑过程中,由于塑封料流到散热片顶部的时候具有一定的速度和压力,会发生溢胶,胶体溢到散热片的暴露在空气中的部分,影响散热片外观,同时也会影响其散热性能的发挥。采用如图所示的散热片顶部结构,当塑封料达到散热片顶部边缘位置时,由于凸起与模具上表面的间距20很小,只能允许少量的胶体通过,胶体流动的速度将减慢。胶体通过以后,将遇到一个体积相对较大的容腔18,可以起到一个类似蓄水池的作用。且胶体紧贴高温的模具上表面,这少量胶体受高温的影响,将被迅速固化,流动性降低,最大程度地抑制了溢胶现象的发生。还可以在将散热片粘接在基板上的时候,使用导电的粘接剂,将散热片与基板的地极导通。这样,内部的电路就被散热片与地极板包围起来,可以起到静电屏蔽的作用,防止外面电信号的干扰,提升芯片及电路的电性能。
如上所述根据本发明的半导体封装具有以下作用,即通过在球栅阵列的封装形式中加装一散热片,散热片布置在芯片上方,芯片产生的大量的热传导至散热片,然后由散热性能极好的散热片发散到空气中;散热片采用了凸台和侧壁开口的结构保证塑封料充满整个容腔;散热片下部通孔的设计,保证了散热片在塑封体中的固定;特别是散热片的顶部边缘采用环形槽的结构,解决了胶体上溢到散热片顶部的问题。
应注意本发明不限于如上所述的优选实施例,很明显由本领域的普通技术人员可以作出各种改型、附加和替换都不脱离本发明所附权利要求书限定的发明精神和范围。

Claims (10)

1.一种半导体封装方法,其特征在于:
在芯片上覆盖一散热片;
此散热片的下端用粘接剂与基板连接;
散热片的顶端露出封装体表面,将芯片产生的热散发到空气中;
树脂或类似物质充满散热片与芯片之间,及散热片侧壁,以保护芯片电路。
2.根据权力要求1中所述的封装方法,其特征在于,散热片由导热材料制成。
3.根据权利要求2中所述的封装方法,其特征在于,散热片材料可以为铜。
4.根据权利要求2中所述的封装方法,其特征在于,散热片材料可以为铝。
5.根据权利要求1中所述的封装方法,其特征在于,散热片的下部,有多个凸起,用来支撑散热片。同时在散热片和基板中间产生间隔,有利于塑封胶灌入。
6.根据权利要求2中所述的封装方法,其特征在于,凸起部分的旁边开有若干通孔,用以塑封料通过,使散热片定位更准确、牢固。
7.根据权利要求1中所述的封装方法,其特征在于,散热片的侧壁开口,利于塑封过程中,胶体注入和空气排出。
8.根据权利要求1中所述的封装方法,其特征在于,散热片下部边缘带有若干缺口,可以在散热片受压的时候,产生变形,减轻散热片侧壁产生的应力。
9.根据权利要求1中所述的封装方法,其特征在于,散热片顶端边缘有一环形槽腔,起到避免胶体冲上散热片顶端的作用。
10.根据权利要求1中所述的封装方法,其特征在于,散热片下端通过电路与基板地极电性相连,起到静电屏蔽作用,改善内电路电性能。
CN 01139258 2001-12-27 2001-12-27 一种具有散热片的半导体封装方法 Expired - Fee Related CN1291466C (zh)

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CN100336190C (zh) * 2003-10-20 2007-09-05 三菱电机株式会社 半导体装置的制造方法及半导体装置
CN100452368C (zh) * 2004-11-19 2009-01-14 株式会社电装 半导体器件及其制造方法和装置
CN102931160A (zh) * 2012-11-02 2013-02-13 敦南微电子(无锡)有限公司 半导体器件去除残胶的平脚结构
CN103021902A (zh) * 2011-09-21 2013-04-03 国碁电子(中山)有限公司 半导体封装铸模装置及方法
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CN103978871A (zh) * 2013-02-08 2014-08-13 法国圣戈班玻璃公司 角窗及注塑成型组件成型方法、导轨、角窗、车门及汽车
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CN104968179A (zh) * 2015-04-22 2015-10-07 惠州智科实业有限公司 一种嵌件注塑散热器及其制备工艺
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CN113276348A (zh) * 2020-02-19 2021-08-20 长鑫存储技术有限公司 注塑模具及注塑方法
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