CN1419661A - 用于物体均匀加热的设备 - Google Patents
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Abstract
一种用于物体(O)均匀加热的设备,包括用于支撑物体(O)的支撑表面(2),和布置在支撑表面(2)上的加热层(3)。加热层(3)至少部分吸收从来源(4)接收的能量和至少部分释放这样吸收的能量到支撑在支撑表面(2)上的物体(O)。层(3)由这样的材料组成使得由层(3)吸收的能量以自动调节的方式沿层(3)的表面均匀分布。加热设备形成简单和紧密的单元,它可用于快速地将物体(O)加热到均匀的温度。
Description
发明领域
本发明一般涉及物体的加热和更具体地涉及具有严格要求的加热使得在被加热的物体中达到温度的均匀分布。
本发明具体地,但不是专有地,涉及微结构和纳米结构的制造。因此,以下是涉及本发明关于这样制造的背景技术、目的和实施方案的描述,特别是纳米刻印平版印刷。然而应当理解本发明也适于在其它情况下物体的加热。
背景技术
用于制造纳米结构,即尺寸为100nm或更小的结构的有希望技术是所谓的纳米刻印平版印刷。此技术描述在文献US-A-5,772,905中,该文献在此引入作为参考。在这样的纳米刻印平版印刷中,将模具,它含有纳米结构的图案,压入聚合物材料(抗蚀剂)的薄膜,将该材料涂敷到基材上,因此凹口在膜中按照模具的图案形成。随后,除去在凹口中的任何剩余膜使得将基材曝露。在随后的处理步骤中,在基材中或在提供到基材上的另一种材料中复制膜中的图案。
为了在这样纳米结构制造中的可接受结果,在将模具压入膜之前,必须非常均匀地加热涂敷到基材上的膜。因此沿膜表面的温度变化应当最小化。此外,应当可以精确地将膜的温度控制到给定值。为了生产的原因,也需要膜的加热较快。目前没有满足这些要求的加热设备。
发明概述
本发明的目的是完全或部分满足上述要求。更具体地,本发明的目的是提供允许物体均匀加热的设备。
本发明的目的也是提供能够均匀地加热物体精确地达到给定温度的设备。
本发明的另一个目的是提供允许在短时间内将物体加热到给定温度的设备。
本发明的进一步目的是提供允许物体的均匀加热和构造简单的设备。
本发明的一个另外目的是提供在真空中允许物体均匀加热的设备。
现在通过根据权利要求1的设备,达到从如下描述是显然的这些和其它目的。优选的实施方案定义在从属权利要求中。
由于如下事实:在层中吸收的能量以自动调节的方式沿表面均匀分布,此能量会非常均匀地从层的表面释放到物体。因此,可以将物体均匀地加热到给定温度。
根据实施方案,该层由这样的材料组成:当温度升高时它的接收能量吸收降低。因此,自动达到吸收能量在层中的均匀分布。如果温度在层的一部分中升高,事实上相对于层的其它部分在该部分中能量的吸收自动降低。
根据另外的实施方案,层的厚度使得接收能量的传递基本沿表面进行。因此接收能量被强制沿表面分布,由此达到能量在层表面上的快速均等。
根据优选的实施方案,使层适应于接收电能,由于在层中的电阻损失将电能转化成热量。此实施方案允许加热设备的简单和紧密的设计。优选,该层由电阻率随升高温度增加的导电材料组成。因此,自动达到在层中形成的热能的均匀分布。如果温度在层的一部分中升高,事实上从来源提供到层的电流会主要传导到其它层部分,因此它的温度升高。也优选材料具有高电阻率,优选至少约50μΩcm(在20℃的参考温度下)和最优选至少约500μΩcm(在20℃的参考温度下),使得在层中将提供的大量电能转化成热能。因此,可以将层的厚度保持下降,由此层快速采用沿层表面均匀分布的温度。事实上,材料必须不具有这样的高电阻率以用作电绝缘体。
根据一个更优选的实施方案,材料是碳,优选石墨。此材料可容易地形成为薄层和具有高熔点和高电阻率。此外,它易于自发形成绝缘氧化物。优选碳的厚度小于约1mm,优选小于约0.1mm。已经发现这些尺寸提供足够的生热,而同时电流在层中的传递基本沿表面进行。
根据优选的实施方案,将该层基本与支撑表面平行布置,因此在层中吸收的能量可以均匀地传递到物体。
也优选在背向支撑表面的层一侧布置隔热元件。因此,将层释放的能量指向支撑表面,使得优化向物体的能量传递。
根据本发明的另外实施方案,通过从灯的辐射加热层,它的波长适于在层中的吸收。将灯合适地布置在背向支撑表面的层一侧。
根据本发明一个更另外的实施方案,通过超声波加热该层,调节它的波长以被在层中吸收。将超声波源有利地布置在背向支撑表面的层一侧。
附图简述
以下参见所附简图更详细地描述本发明和它的优点,该简图通过实施例说明本发明目前优选的实施方案。
图1是根据本发明第一实施方案的加热设备的侧视图,其中将电能提供到该层。
图2是根据本发明第二实施方案的加热设备的侧视图,其中将辐射能提供到该层。
图3是根据本发明第三实施方案的加热设备的侧视图,其中将声能提供到该层。
优选实施方案的描述
图1显示本发明加热设备1的第一实施方案,它在支撑将被加热的物体0的支撑表面上。在所示的实施例中,它简要地说明加热设备在纳米刻印平版印刷中的用途,物体0由硅/二氧化硅的基片01和涂敷到其上的聚合物层02组成。设备1包括石墨的加热层3,它连接到电源4。电源4产生与加热层3的电路和可活化以通过此层提供电流。加热层3的表面的尺寸至少与支撑表面2相同。在此实施方案中,加热层3具有约0.1mm的均匀厚度。在朝向支撑表面2的加热层3一侧,布置电绝缘层5,在电绝缘层的外侧布置刚性支撑板6,它形成用于物体0的支撑表面2和保护电绝缘层5和加热层3免受损害。在所示的实施例中,支撑板6由铝组成和电绝缘层5由在支撑板6上形成的二氧化铝层组成。在背向支撑表面2的加热层3一侧,布置Nefalit的隔热板7,即由氧化铝、陶瓷纤维和空气组成的热稳定复合材料。温度传感器8检测加热层3中的温度,和将来自传感器8的温度信息反馈到电源4以控制它的能量供应。
由于石墨是具有正温度系数的材料,即它的电阻率随增加的温度增加,从电压源4提供到加热层3的主要部分电流会连续和以自动调节的方式被指向具有最低温度的加热层3的区域。因此沿加热层3表面的能量分布,以及温度分布会是非常均匀的。通过电绝缘层5和支撑板6,将此均匀分布的能量传导到物体0,将物体均匀地加热。加热非常快速地发生得益于加热层3的小质量。
测试呈现优异的结果。在一个测试中,将设备1用于加热厚度为300μm的硅/二氧化硅基片。在背向支撑表面2的基片一侧的不同区域安装多个温度传感器(未示出)以测量在加热过程期间和之后的基片的温度均匀性。使用本发明的设备1,将基片在小于约10s内从20℃加热到200℃和在小于约1min内从20℃加热到1000℃。在基片的表面上,在50mm区域以内的温度变化小于±1℃。
理所当然不是石墨的其它材料可用于加热层3,例如具有正温度系数的合适金属或金属复合材料。然而层材料的电阻率应当相对较高,使得可以在约1mm或更小的层厚度内获得足够的热生成。在如此厚的加热层3中,电流基本不沿表面传导,但也在深度中,它在层3中导致不希望低的温度均等。至少约50μΩcm(在20℃的参考温度下)和最优选至少约500μΩcm(在20℃的参考温度下)的电阻率是适当的。
将隔热板7曝露于高温和目的在于回射从加热层3释放的热能和,因此,事实上将所有的释放热能传导到支撑表面2。本领域技术人员理解尽管目前发现Nefalit得到最优的结果,有许多合适的材料。其它合适材料的例子是氧化铝和各种陶瓷,如Macor。
支撑板6,它可以被免除,应当具有均匀的厚度和允许从层3到支撑表面2的高传热。可以采用非必要的方式布置电绝缘层5,例如以直接涂敷到加热层3上的氧化物的形式。然而对于要从层3均匀地传递到物体0的热能,加热层3、电绝缘层5和支撑板6应当是平面的,彼此平行和彼此倚靠着布置。
图2显示根据本发明加热设备1’的另外实施方案。相应于上述加热设备1那些的部件已经给出相同的附图标记和不会在如下部分中进一步描述。
加热设备1’包括内置的辐射源4’,如IR源,将它布置以辐射加热层3用于感应热能到加热层中。在此情况下,加热层3由当温度升高时它的入射辐射能吸收降低的材料组成。因此,可以达到沿层3表面非常均匀的能量分布,以及温度分布。由于也在此实施方案中,加热层3应当较薄,在来源4’和层3之间布置支撑元件10,它对于辐射是透明的,用于支撑后者。在包括用于发射红外(IR)辐射的来源4’的情况下,支撑元件10可以由如,在讨论的辐射区域中具有合适带隙的SiC组成。
图3显示根据本发明加热设备1”的第二另外实施方案。相应于上述加热设备1那些的部件已经给出相同的附图标记和不会在如下部分中进一步描述。
加热设备1”包括多个内置的超声波源4”,如压电元件,它适于向加热层3发射超声波用于感应热量到加热层中。在此情况下,加热层3由当温度升高时它的入射声能的吸收降低的材料组成。因此,可以达到沿层3表面非常均匀的能量分布,以及温度分布。由于也在此实施方案中,加热层3应当较薄,在来源4”和层3之间布置支撑元件10,它对于声波是透明的,用于支撑后者。
本发明设备1,1’非常适于加热在纳米刻印平版印刷中涂敷到基片上的聚合物层,但用于所有种类的加热,其中在受热的物体中要求较高的温度均匀程度。由于设备1,1’可用于在真空中,也在高真空中加热物体,它非常适用于生产微结构和纳米结构,例如用于在半导体的制造中焙烧抗蚀材料,在外延中加热基材和当将它镀金属时加热基材。此外,设备1,1’非常适于提供物体的涂层,例如通过施加可熔融材料或溶剂到物体上和加热物体使得材料/溶剂形成它的该涂层。
最后,应当强调本发明绝不限于上述的实施方案并且几种改进在所附权利要求范围内是可行的。例如,该设备可包括并排和/或在彼此的顶部布置的多个加热层。
Claims (21)
1.一种用于物体(0)均匀加热的设备,特征为用于支撑物体(0)的支撑表面(2)和层(3),该层被布置在支撑表面(2)上和该层至少部分吸收从来源(4)接收的能量和该层至少部分释放这样吸收的能量到支撑在表面(2)上的物体(0),层(3)由这样的材料组成使得由层(3)吸收的能量以自动调节的方式沿表面均匀分布。
2.权利要求1的设备,其中材料使得当温度升高时它的接收能量的吸收降低。
3.权利要求1或2的设备,其中层的厚度使得接收能量的传递基本沿表面进行。
4.权利要求1-3中任一项的设备,其中布置该层(3)以从来源(4)接收电能,吸收的能量包括在该层(3)中由电阻损失产生的热能。
5.权利要求4的设备,其中该材料使得当温度升高时它的电阻率增加。
6.权利要求4或5的设备,其中在20℃的参考温度下,该材料具有高电阻率,优选至少约50μΩcm,和最优选至少约500μΩcm。
7.权利要求1-3中任一项的设备,其中布置该层(3)以从来源(4)接收辐射能,吸收的能量包括在该层(3)中由辐射能感应的热能。
8.权利要求7的设备,其中该材料使得当温度升高时它的吸收系数降低。
9.前述权利要求中任一项的设备,其中层(3)包括碳,优选石墨的层。
10.权利要求9的设备,其中该层的厚度小于约1mm,优选小于约0.1mm。
11.前述权利要求中任一项的设备,其中将层(3)与支撑表面(2)基本平行布置。
12.前述权利要求中任一项的设备,其中在背向支撑表面(2)的层(3)一侧布置电绝缘元件(7)。
13.前述权利要求中任一项的设备,其中在面向支撑表面(2)的层(3)一侧布置电绝缘元件(5)。
14.前述权利要求中任一项的设备,其中在面向支撑表面(2)的层(3)一侧布置刚性保护元件(6)。
15.前述权利要求中任一项的设备,其中保护元件(6)允许从层(3)到支撑表面(2)的高传热程度。
16.权利要求1-15中任一项的设备用于物体(0)均匀加热的用途。
17.权利要求1-15中任一项的设备在纳米刻印平版印刷中用于基材(01)上聚合物层(02)均匀加热的用途。
18.权利要求1-15中任一项的设备在半导体制造中用于焙烧抗蚀剂材料的用途。
19.权利要求1-15中任一项的设备在外延中用于基材均匀加热的用途。
20.权利要求1-15中任一项的设备在将基材镀金属中用于基材均匀加热的用途。
21.权利要求1-15中任一项的设备用于加热物体和施加到其上的可熔融材料或溶剂以在该物体上形成涂层的用途。
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EP (1) | EP1275030A1 (zh) |
JP (1) | JP2003524304A (zh) |
CN (1) | CN1215377C (zh) |
AU (1) | AU2001234319A1 (zh) |
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-
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- 2000-02-23 SE SE0000574A patent/SE515785C2/sv unknown
-
2001
- 2001-02-21 AU AU2001234319A patent/AU2001234319A1/en not_active Abandoned
- 2001-02-21 WO PCT/SE2001/000381 patent/WO2001063361A1/en active Application Filing
- 2001-02-21 CN CN01806997.5A patent/CN1215377C/zh not_active Expired - Fee Related
- 2001-02-21 JP JP2001562261A patent/JP2003524304A/ja not_active Withdrawn
- 2001-02-21 EP EP01906497A patent/EP1275030A1/en not_active Withdrawn
- 2001-02-21 US US10/204,631 patent/US20030141291A1/en not_active Abandoned
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2004
- 2004-10-06 US US10/958,588 patent/US20050077285A1/en not_active Abandoned
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CN103837249B (zh) * | 2012-11-20 | 2016-12-21 | 深南电路有限公司 | 热盘温度均匀性的测试方法及测试装置 |
CN105493260A (zh) * | 2013-08-29 | 2016-04-13 | 株式会社普利司通 | 承载器 |
US10287685B2 (en) | 2013-08-29 | 2019-05-14 | Maruwa Co., Ltd. | Susceptor |
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Publication number | Publication date |
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WO2001063361A1 (en) | 2001-08-30 |
US20050077285A1 (en) | 2005-04-14 |
CN1215377C (zh) | 2005-08-17 |
SE515785C2 (sv) | 2001-10-08 |
SE0000574D0 (sv) | 2000-02-23 |
EP1275030A1 (en) | 2003-01-15 |
AU2001234319A1 (en) | 2001-09-03 |
US20030141291A1 (en) | 2003-07-31 |
JP2003524304A (ja) | 2003-08-12 |
SE0000574L (sv) | 2001-08-24 |
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