CN1379915A - 至少带有一个电容器的集成电路装置及其制造制作方法 - Google Patents
至少带有一个电容器的集成电路装置及其制造制作方法 Download PDFInfo
- Publication number
- CN1379915A CN1379915A CN00814449A CN00814449A CN1379915A CN 1379915 A CN1379915 A CN 1379915A CN 00814449 A CN00814449 A CN 00814449A CN 00814449 A CN00814449 A CN 00814449A CN 1379915 A CN1379915 A CN 1379915A
- Authority
- CN
- China
- Prior art keywords
- electrode
- capacitors
- groove
- capacitor
- adsorption layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 155
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 12
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 9
- 238000001179 sorption measurement Methods 0.000 claims description 43
- 238000000034 method Methods 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000009713 electroplating Methods 0.000 abstract description 4
- 229910052454 barium strontium titanate Inorganic materials 0.000 abstract 1
- 238000005260 corrosion Methods 0.000 description 11
- 230000007797 corrosion Effects 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- 230000004888 barrier function Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- WOIHABYNKOEWFG-UHFFFAOYSA-N [Sr].[Ba] Chemical compound [Sr].[Ba] WOIHABYNKOEWFG-UHFFFAOYSA-N 0.000 description 1
- VNSWULZVUKFJHK-UHFFFAOYSA-N [Sr].[Bi] Chemical compound [Sr].[Bi] VNSWULZVUKFJHK-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
- H01L28/92—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by patterning layers, e.g. by etching conductive layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (17)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19950364.8 | 1999-10-19 | ||
DE19950364A DE19950364A1 (de) | 1999-10-19 | 1999-10-19 | Integrierte Schaltungsanordnung mit mindestens einem Kondensator und Verfahren zu deren Herstellung |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1379915A true CN1379915A (zh) | 2002-11-13 |
CN1230916C CN1230916C (zh) | 2005-12-07 |
Family
ID=7926176
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB008144494A Expired - Fee Related CN1230916C (zh) | 1999-10-19 | 2000-10-06 | 至少带有一个电容器的集成电路装置及其制造制作方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US6646299B2 (zh) |
EP (1) | EP1222695B1 (zh) |
JP (1) | JP2003512726A (zh) |
KR (1) | KR100743294B1 (zh) |
CN (1) | CN1230916C (zh) |
DE (1) | DE19950364A1 (zh) |
TW (1) | TW486807B (zh) |
WO (1) | WO2001029900A1 (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7268383B2 (en) | 2003-02-20 | 2007-09-11 | Infineon Technologies Ag | Capacitor and method of manufacturing a capacitor |
DE102004021401B4 (de) | 2004-04-30 | 2011-02-03 | Qimonda Ag | Herstellungsverfahren für ein Stapelkondensatorfeld |
DE102004021399B3 (de) | 2004-04-30 | 2005-10-20 | Infineon Technologies Ag | Herstellungsverfahren für ein Stapelkondensatorfeld mit einer regelmäßigen Anordnung einer Mehrzahl von Stapelkondensatoren |
US20070037349A1 (en) * | 2004-04-30 | 2007-02-15 | Martin Gutsche | Method of forming electrodes |
DE102005042524A1 (de) * | 2005-09-07 | 2007-03-08 | Infineon Technologies Ag | Verfahren zur Herstellung von Stapelkondensatoren für dynamische Speicherzellen |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5614018A (en) * | 1991-12-13 | 1997-03-25 | Symetrix Corporation | Integrated circuit capacitors and process for making the same |
JP2956482B2 (ja) * | 1994-07-29 | 1999-10-04 | 日本電気株式会社 | 半導体記憶装置及びその製造方法 |
US5633781A (en) * | 1995-12-22 | 1997-05-27 | International Business Machines Corporation | Isolated sidewall capacitor having a compound plate electrode |
JPH1056145A (ja) * | 1996-08-07 | 1998-02-24 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
US6033919A (en) * | 1996-10-25 | 2000-03-07 | Texas Instruments Incorporated | Method of forming sidewall capacitance structure |
KR100227070B1 (ko) * | 1996-11-04 | 1999-10-15 | 구본준 | 커패시터 및 그의 제조방법 |
US6294420B1 (en) * | 1997-01-31 | 2001-09-25 | Texas Instruments Incorporated | Integrated circuit capacitor |
DE19911148C1 (de) | 1999-03-12 | 2000-05-18 | Siemens Ag | DRAM-Zellenanordnung und Verfahren zu deren Herstellung |
-
1999
- 1999-10-19 DE DE19950364A patent/DE19950364A1/de not_active Withdrawn
-
2000
- 2000-10-06 JP JP2001531147A patent/JP2003512726A/ja not_active Withdrawn
- 2000-10-06 KR KR1020027005013A patent/KR100743294B1/ko not_active IP Right Cessation
- 2000-10-06 WO PCT/DE2000/003521 patent/WO2001029900A1/de active Application Filing
- 2000-10-06 CN CNB008144494A patent/CN1230916C/zh not_active Expired - Fee Related
- 2000-10-06 EP EP00982963A patent/EP1222695B1/de not_active Expired - Lifetime
- 2000-10-19 TW TW089121909A patent/TW486807B/zh not_active IP Right Cessation
-
2002
- 2002-04-19 US US10/126,365 patent/US6646299B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
WO2001029900A1 (de) | 2001-04-26 |
US20020149043A1 (en) | 2002-10-17 |
US6646299B2 (en) | 2003-11-11 |
KR20020047252A (ko) | 2002-06-21 |
DE19950364A1 (de) | 2001-04-26 |
CN1230916C (zh) | 2005-12-07 |
EP1222695A1 (de) | 2002-07-17 |
EP1222695B1 (de) | 2012-08-08 |
JP2003512726A (ja) | 2003-04-02 |
TW486807B (en) | 2002-05-11 |
KR100743294B1 (ko) | 2007-07-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1162902C (zh) | 导电连线的制造方法 | |
CN1144290C (zh) | 半导体器件及其生产方法 | |
CN1099707C (zh) | 具有“金属上的电容器”结构的半导体器件的制造方法 | |
CN100347808C (zh) | 金属容器结构的平面化 | |
CN1143377C (zh) | 具有高ε介电材料或铁电材料的电容器及其制造方法 | |
CN1901202A (zh) | 半导体元件及其形成方法 | |
CN1223001C (zh) | 具有接触电容器电极的插塞的半导体存储器及其制备方法 | |
CN1246733A (zh) | 具有迭式电容器的动态随机存取存储器及其制作方法 | |
CN1140927C (zh) | 存储单元的制法 | |
CN1149662C (zh) | 用于制作无阻挡层的半导体存储器装置的方法 | |
CN1230916C (zh) | 至少带有一个电容器的集成电路装置及其制造制作方法 | |
CN1497701A (zh) | 半导体器件及使用金属镶嵌工艺制造半导体器件的方法 | |
CN1229861C (zh) | 在高低拓朴区域上形成布线层的方法和集成电路 | |
CN1149663C (zh) | 制造无势垒半导体存储器装置的方法 | |
CN1897222A (zh) | 用于制造用于半导体器件的电容器的方法 | |
KR100781818B1 (ko) | 메모리 셀 형성 방법 | |
US20040248365A1 (en) | Area-efficient stack capacitor | |
CN1146017C (zh) | 半导体器件及其制造方法 | |
CN1202569C (zh) | 在铜镶嵌制程中形成金属-绝缘-金属型(mim)电容器的方法 | |
CN1244730A (zh) | 半导体器件及其制造方法 | |
CN1160793C (zh) | 具有“埋置的极板式电极”的集成半导体存储器装置 | |
CN1236974A (zh) | 用两个腐蚀图形制造半导体存储器件的方法 | |
CN100339949C (zh) | 沟槽电容器及制造沟槽电容器之方法 | |
CN1159758C (zh) | 动态随机存取存储器及金属连线的制造方法 | |
CN1713383A (zh) | 半导体装置、铁电存储器及半导体装置的制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C06 | Publication | ||
PB01 | Publication | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: QIMONDA AG Free format text: FORMER OWNER: INFINEON TECHNOLOGIES AG Effective date: 20121128 |
|
C41 | Transfer of patent application or patent right or utility model | ||
C56 | Change in the name or address of the patentee | ||
CP01 | Change in the name or title of a patent holder |
Address after: Munich, Germany Patentee after: Infineon Technologies AG Address before: Munich, Germany Patentee before: INFINEON TECHNOLOGIES AG |
|
TR01 | Transfer of patent right |
Effective date of registration: 20121128 Address after: Munich, Germany Patentee after: QIMONDA AG Address before: Munich, Germany Patentee before: Infineon Technologies AG |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20151230 Address after: German Berg, Laura Ibiza Patentee after: Infineon Technologies AG Address before: Munich, Germany Patentee before: QIMONDA AG |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20051207 Termination date: 20151006 |
|
EXPY | Termination of patent right or utility model |