CN1321457C - 浪涌保护半导体装置 - Google Patents
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Abstract
pnpn闸流晶体管(Thy1)和六个pn二极管(D1、D2、D3、D4、D5和D6)形成在第一导电类型的半导体基底中,并通过第二导电类型的扩散层与闸流晶体管元件(Thy1)的正极一起将上述元件分为六个区域。具体的,成倍分隔扩散层布置在闸流晶体管(Thy1)和三个pn二极管(D41、D2和D6)的区域与三个剩余的pn二极管(D3、D4和D5)区域之间。通过表面连接以单块集成电路形式构成平衡类型浪涌保护电路。
Description
技术领域
本发明涉及用于通讯装置、计算机等等中的保护电路装置的浪涌保护半导体装置,该装置用于保护诸如雷涌和开关浪涌的过电压和过电流。
背景技术
通过在基底上结合闸流晶体管元件和pn二极管元件以提供理想的电路,可以获得这种浪涌保护半导体装置。这些技术在No.6104591、5512784和4644437的美国专利文献中给出。
然而,在具有上述设置的浪涌保护半导体装置中,基底上安装了诸如pnpn浪涌保护元件和pn二极管元件多个部件。这使装配步骤复杂化,增大了产品尺寸,并使产品昂贵。
在No.6075277的美国专利文献中就给出了通常的技术,该技术包括pnpn闸流晶体管元件和pn二极管元件的单块集成电路结构。
不过,该技术仅可适用于如在图5中给出的电路结构,其中在二极管电桥的AC接线柱之间插入pnpn闸流晶体管元件Thy4。也就是说,不能将该技术应用于在二极管电桥的DC接线柱之间插入pnpn闸流晶体管元件Thy4的电路。
因此,本发明的一个目标是提供一种单块集成电路浪涌保护半导体装置,在该装置中,在相同的半导体基底中形成有平衡电路。
本发明的另一个目标是提供一种单块集成电路浪涌保护半导体装置,在该装置中,二极管被成倍分隔区域分隔开。
本发明的又一个目标是提供一种紧凑的、长寿命的浪涌保护半导体装置。
发明内容
浪涌保护半导体装置包括第一导电类型半导体基底,该基底具有第一和第二表面;闸流晶体管元件,其位于形成在半导体基底中的第二导电类型半导体基底的第一半导体区域中,从而使其从第一表面延伸至第二表面,并具有正极电极和负极电极;第一导电类型半导体区域,基底区域与第一半导体区域的一侧毗邻,并由半导体基底组成;位于第一导电类型的第二半导体区域中的第一和第二二极管元件,第二半导体区域与第一半导体区域的另一侧毗邻,并由半导体基底组成,每个第一和第二二极管元件都具有正极电极和公共负极电极;分别位于第三、第四、第五半导体区域中的第三、第四、第五二极管元件,分别的,第三、第四、第五半导体区域由半导体基底组成,并通过第二导电类型的分隔区域中的一个被彼此分隔开,分隔区域中的一个与基底区域毗邻,并且每个第三、第四、第五二极管元件都具有形成在第一表面的正极电极和负极电极;位于与第二基底区域毗邻的第一传导性质的第六半导体区域中的第六二极管元件,并通过分隔区域中的一个将其分隔开,第六半导体区域由半导体基底组成,并且第六二极管元件具有正极电极和负极电极,其中第一、第二和第六二极管元件以及闸流晶体管元件通过成倍分隔结构与第三、第四和第五二极管元件隔开,并且其中第一二极管元件的正极电极和第四二极管元件的负极电极相连接,第二二极管元件的正极电极和第五二极管元件的负极电极相连接,第五二极管元件的正极电极与第四二极管元件的正极电极相连接,闸流晶体管元件连接在第一节点和第二节点之间,通过第一二极管元件的负极电极和第二二极管元件的负极电极给出第一节点,通过第五二极管元件的正极电极和第四二极管元件的正极电极给出第二节点,使得对于第二节点,第一节点是正的,第六二极管元件的负极电极连接到第一节点,第三二极管元件的正极电极连接到第二节点,并且第六二极管元件的正极电极和第三二极管元件的负极电极连接到接地端。
附图说明
图1是给出了依照本发明的第一实施例的浪涌保护半导体装置的截面图;
图2是解释所用电路的图,该电路包括依照本发明的浪涌保护半导体装置的等效电路(以交替的长短虚线封闭)。
图3是依照本发明第二个实施例的浪涌保护半导体装置的截面图。
图4是依照本发明第三个实施例的浪涌保护半导体装置的截面图。
图5是解释依照通常技术的浪涌保护半导体装置的电路的图。
具体实施方式
图1给出了依照第一实施例的浪涌保护半导体装置10的截面图,图2是包括它的等效电路(以交替的长短虚线封闭)的使用的电路。
更确切的说,通过从具有第一和第二表面的n-型半导体基底11的两个表面中选择性的扩散p-型杂质形成P+型分隔区域40。通过分隔区域40将n-型半导体基底11分成多个元件区域。也就是说,多个元件区域41到45是n-型半导体基底,并从第一表面延伸至第二表面,而且提供了闸流晶体管元件Thy1的n-型正极区域46。在P+型正极区域46和n-型元件区域43之间插入由n-型半导体基底构成的分隔区域47,从而通过P+型正极区域46、n-型分隔区域47和P+型区域40将n-型元件区域41和n-型元件区域43成倍分隔开。更具体的,闸流晶体管元件Thy1的P+型正极区域46作为P+型分隔区域起作用。
此外,如此实施用于形成闸流晶体管元件Thy1的正极区域46的上述p-型杂质的扩散,使得可以保留由n-型半导体基底制成的区域48。在区域48中,n-型隐蔽层32具有的杂质浓度比生成半导体基底的杂质浓度要高。在形成p-型区域之后,提供了多个n+型发射层。
对于每个元件区域41到45,通过从第一表面扩散p-型和n-型杂质形成正极和负极区域。通过在这些正极和负极区域中形成电极,提供了横向的二极管元件D1到D6。此外,通过分别在n+型发射层和正极区域46上形成电极,提供了闸流晶体管元件Thy1。
在图1中,参考数字10表示半导体芯片;12、13、14、15、16、17、18、19、20、21、22、23和24表示金属电极;25、26和27表示金属电极接线柱;30和31表示诸如二氧化硅等等的绝缘薄膜。金属电极14和15之间的部分表示具有隐藏扩散层32的pnpn闸流晶体管元件Thy1。隐藏扩散层32具有与半导体基底相同的导电类型,并且其具有的杂质浓度稍微比基底中杂质的高。
金属电极12和13、18和13、21和22、23和24、16和17、19和20之间的部分分别提供了第一到第六pn二极管元件D1、D2、D3、D4、D5和D6。
利用了布线层的半导体表面上的连接如下。第一pn二极管元件D1的正极金属电极12和第四pn二极管元件D4的负极金属电极22连接到第一金属电极接线柱25,第二pn二极管元件D2的正极金属电极18和第五pn二极管元件D5的负极金属电极24连接到第二金属电极接线柱26,第六pn二极管元件D6的正极金属电极19和第三pn二极管元件D3的负极金属电极24连接到第三金属电极接线柱27,第一、第二和第六pn二极管元件D1、D2和D6的负极金属电极13和20连接到闸流晶体管元件Thy1的正极金属14,而且第三、第四和第五pn二极管元件D3、D4和D5的正极金属电极16、21和23连接到闸流晶体管元件Thy1的负极金属接线柱15。以这种方式,在单块集成电路浪涌保护半导体装置中,就获得了在形成在单独基底上的平衡的浪涌保护电路。
如上面所述,在n-型元件区域41和43之间插入由n-型半导体基底构成的分隔区域47,从而通过P+型正极区域46、n-型分隔区域47和P+型分隔区域40将n-型元件区域41和43成倍分隔开。这就增加了二极管元件D1和D4之间的击穿电压,并增进了二极管电桥的可靠性。
此外,在该实施例中,闸流晶体管元件Thy1的金属电极和二极管元件D1到D6安排在半导体基底的第一表面上。这使在装配过程中的布线处理容易实施。
进一步如上面所述,包括闸流晶体管元件Thy1和二极管元件D1、D2和D6的区域A与包括二极管元件D3、D4和D5的区域B被成倍分隔开。尽管在每个区域A和B中可以改变这些元件的位置,但这些元件的位置不能在区域A和B之间改变。
图2是解释所用电路的图,该电路包括依照本发明的浪涌保护半导体装置的等效电路(以虚线封闭)。
线L1和L2表示信号线,而S表示被保护的电路,比如通讯装置。以虚线封闭的部分表示依照本发明的浪涌保护半导体装置的等效电路。金属电极接线柱25与L1连接,金属电极接线柱26与L2连接,而金属电极接线柱27与接地线连接。
当施加正常的信号线对地电压(signal-line-to-ground voltage)到信号线L1和L2时,即在金属电极接线柱25和27之间和在金属电极接线柱26和27之间施加电压时,在图1中给出的闸流晶体管元件Thyl就保持在关闭状态。然而,如果产生过电压或过电流,比如同步到达L1和L2的雷涌,不管是浪涌侵扰L1还是L2,通过闸流晶体管元件Thy1对电压实施钳位并对过电流实施接地,这样,就使被保护的电路s从过电压和过电流浪涌中得到保护。
也就是说,由于施加的电压值比Thy1的击穿电压值小,以虚线表示的保护元件部分通常保持在关闭状态,并且通讯信号电流流向被保护的电路S。
当正极性浪涌从信号线L1和L2侵扰时,Thy1被浪涌电压开启,浪涌电流是:
(1)如果浪涌从L1侵扰,经过路径25→D1→Thy1→D3→27→GND接地,以及
(2)如果表面从L2侵扰,经过路径26→D2→Thy1→D3→27→GND接地。
负极性浪涌是:
(3)如果浪涌从L1侵扰,经过路径25→D4→Thy1→D6→27→GND接地,以及
(4)如果浪涌从L2侵扰,经过路径26→D5→Thy1→D6→27→GND接地。
图3是依照本发明第二个实施例的浪涌保护半导体装置的截面图。在图3中,如在图1中给出的,相同的参考数字表示相同的结构。
考虑到浪涌耐电压等等,提供闸流晶体管元件Thy1和第一、第二和第六二极管元件D1、D2和D6作为垂直元件结构。该结构的剩余部分和在图1中给出的一样。
在该结构中,也可以省略在形成二极管元件D1和D2的元件区域41和形成D6的元件区域45之间的分隔区域40。
在该实施例中,提供闸流晶体管元件Thy1和第一、第二和第六二极管元件D1、D2和D6作为垂直元件结构,这样浪涌保护半导体装置就获得了增大的浪涌耐电压。
图4是依照本发明第三个实施例的浪涌保护半导体装置的截面图。在图4中,如在图1中给出的,相同的参考数字表示相同的结构。
考虑到浪涌耐电压等等,提供闸流晶体管元件Thy1和第一、第二和第六二极管元件D1、D2和D6作为垂直元件结构。在该结构中,通过P+型分隔区域40分隔开n-型半导体基底11以提供用于形成闸流晶体管元件Thy1的n-型元件区域50,以及用于形成第一、第二和第六二极管元件D1、D2和D6的n-型元件区域51。
元件区域50包括从第二表面形成的正极区域,从第一表面形成的n-型隐藏层32,其具有的杂质浓度比半导体基底中的要高,p-型基底区,以及多个n+型发射层。
元件区域51包括在第一表面形成第一、第二和第六二极管元件D1、D2和D6的正极区域和在第二表面形成的公共负极区域。
形成在公共负极区域中的公共负极电极52与闸流晶体管元件Thy1的正极电极14连接,从而提供了如在上面的实施例中的图2给出的二极管电桥。
如上面所述,在n-型元件区域50和n-型元件区域43之间插入由n-型半导体基底构成的分隔区域47,从而通过P+型分隔区域40、n-型分隔区域47和P+型分隔区域40将n-型元件区域50和n-型元件区域43成倍分隔开。这就增加了闸流晶体管元件Thy1和二极管元件D4之间的击穿电压,并增进了二极管电桥的可靠性。
需要注意,尽管这里给出了设置闸流晶体管元件Thy1的正向击穿电压的方法,其中闸流晶体管元件Thy1的正向击穿电压比第一到第六pn二极管元件D1、D2、D3、D4、D5和D6的击穿电压要低,也可以使用使闸流晶体管元件的p-型基底扩散深度小于二极管元件的p-型正极扩散深度的方法,而不是利用具有如上所述的隐藏扩散层32的隐藏层结构闸流晶体管元件Thy1的方法。
还需要注意,作为用于主要保护通讯线的应用举例,闸流晶体管元件Thy1的击穿电压必须是:比如230V、290V、310V或350V,尽管该电压通过隐藏层32来确定,但是二极管耐电压必须要比上述电压高,比如800V。
工业适用性
闸流晶体管元件Thy1和二极管元件D1、D2、D3、D4、D5和D6在相同的半导体芯片上形成单块集成电路结构,并通过成倍分隔结构将二极管元件D1和D4分隔。因此,可以获得具有高击穿电压和高可靠性的紧凑的浪涌保护半导体装置。
Claims (6)
1、一种浪涌保护半导体装置,包括:
具有第一和第二表面的第一导电类型的半导体基底;
闸流晶体管元件,其位于形成在半导体基底中的第二导电类型的第一半导体区域中,从而使其从第一表面延伸至第二表面,并且其具有正极电极和负极电极;
第一导电类型的基底区域,所述基底区域与第一半导体区域的一侧毗邻,并由半导体基底组成;
位于第一导电类型的第二半导体区域中的第一和第二二极管元件,所述第二半导体区域与第一半导体区域的一侧毗邻,并由半导体基底组成,每个第一和第二二极管元件都具有正极电极和公共负极电极;
分别位于第一导电类型的第三、第四、第五半导体区域中的第三、第四、第五二极管元件,分别的,第三、第四、第五半导体区域由从第一表面延伸至第二表面的半导体基底组成,并通过第二导电类型的分隔区域中的一个被彼此分隔开,分隔区域中的一个与基底区域毗邻,并且每个第三、第四、第五二极管元件都具有形成在第一表面的正极电极和负极电极;以及
位于与第二半导体区域毗邻的第一导电类型的第六半导体区域中的第六二极管元件,并且通过分隔区域中的一个将其分隔开,第六半导体区域由半导体基底组成,并且第六二极管元件具有正极电极和负极电极;
其中第一、第二和第六二极管元件以及闸流晶体管元件通过成倍分隔结构与第三、第四和第五二极管元件隔开,并且
其中第一二极管元件的正极电极和第四二极管元件的负极电极相连接,第二二极管元件的正极电极和第五二极管元件的负极电极相连接,第五二极管元件的正极电极与第四二极管元件的正极电极相连接,闸流晶体管元件连接在第一节点和第二节点之间,通过第一二极管元件的负极电极和第二二极管元件的负极电极给出第一节点,通过第五二极管元件的正极电极和第四二极管元件的正极电极给出第二节点,使得对于第二节点,第一节点是正的,第六二极管元件的负极电极连接到第一节点,第三二极管元件的正极电极连接到第二节点,并且第六二极管元件的正极电极和第三二极管元件的负极电极连接到接地端。
2、根据权利要求1所述的浪涌保护半导体装置,其中第二表面被绝缘薄膜覆盖。
3、根据权利要求1所述的浪涌保护半导体装置,其中每个闸流晶体管元件和第一到第六二极管元件具有横向结构,在所述结构中,正极和负极电极位于第一表面上。
4、根据权利要求1所述的浪涌保护半导体装置,其中至少第一、第二和第六二极管元件具有垂直结构,在该结构中,正极电极位于第一表面上,负极电极位于第二表面上,并且闸流晶体管元件具有垂直结构,在该结构中,负极电极位于第一表面上,正极电极位于第二表面上。
5、根据权利要求3所述的浪涌保护半导体装置,其中第一和第二电极接线柱分别连接到第三节点和第四节点,通过第一二极管元件的正极电极和第四二极管元件的负极电极给出第三节点,通过第二二极管元件的正极电极和第五二极管元件的负极电极给出第四节点,并且第一和第二电极接线柱也都连接到被保护的电路上。
6、根据权利要求1所述的浪涌保护半导体装置,其中设置的闸流晶体管元件的正向击穿电压比第一到第六二极管元件的击穿电压低。
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US (1) | US6870202B2 (zh) |
EP (1) | EP1453094A4 (zh) |
JP (1) | JP4369230B2 (zh) |
CN (1) | CN1321457C (zh) |
WO (1) | WO2003041170A1 (zh) |
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CN1582497A (zh) | 2005-02-16 |
EP1453094A4 (en) | 2006-08-23 |
WO2003041170A1 (fr) | 2003-05-15 |
US20040201035A1 (en) | 2004-10-14 |
JP4369230B2 (ja) | 2009-11-18 |
EP1453094A1 (en) | 2004-09-01 |
US6870202B2 (en) | 2005-03-22 |
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