CN1320523C - 在金属薄膜上借助氮曝光形成的防腐层 - Google Patents

在金属薄膜上借助氮曝光形成的防腐层 Download PDF

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CN1320523C
CN1320523C CNB031601871A CN03160187A CN1320523C CN 1320523 C CN1320523 C CN 1320523C CN B031601871 A CNB031601871 A CN B031601871A CN 03160187 A CN03160187 A CN 03160187A CN 1320523 C CN1320523 C CN 1320523C
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nitrogen
film
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transducer
magnetic transducer
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CN1503227A (zh
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肖义平
黄晨业
吉拉·塔比
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HGST Netherlands BV
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
    • G11B5/3169—Working or finishing the interfacing surface of heads, e.g. lapping of heads
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/10—Structure or manufacture of housings or shields for heads
    • G11B5/102—Manufacture of housing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3103—Structure or manufacture of integrated heads or heads mechanically assembled and electrically connected to a support or housing
    • G11B5/3106—Structure or manufacture of integrated heads or heads mechanically assembled and electrically connected to a support or housing where the integrated or assembled structure comprises means for conditioning against physical detrimental influence, e.g. wear, contamination
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/187—Structure or manufacture of the surface of the head in physical contact with, or immediately adjacent to the recording medium; Pole pieces; Gap features
    • G11B5/1871—Shaping or contouring of the transducing or guiding surface
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/40—Protective measures on heads, e.g. against excessive temperature 
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor
    • Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
    • Y10T29/49032—Fabricating head structure or component thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor
    • Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
    • Y10T29/49032—Fabricating head structure or component thereof
    • Y10T29/49034—Treating to affect magnetic properties
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor
    • Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
    • Y10T29/49032—Fabricating head structure or component thereof
    • Y10T29/49036—Fabricating head structure or component thereof including measuring or testing
    • Y10T29/49041—Fabricating head structure or component thereof including measuring or testing with significant slider/housing shaping or treating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor
    • Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
    • Y10T29/49032—Fabricating head structure or component thereof
    • Y10T29/49036—Fabricating head structure or component thereof including measuring or testing
    • Y10T29/49043—Depositing magnetic layer or coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor
    • Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
    • Y10T29/49032—Fabricating head structure or component thereof
    • Y10T29/49036—Fabricating head structure or component thereof including measuring or testing
    • Y10T29/49043—Depositing magnetic layer or coating
    • Y10T29/49046—Depositing magnetic layer or coating with etching or machining of magnetic material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49789—Obtaining plural product pieces from unitary workpiece
    • Y10T29/49798—Dividing sequentially from leading end, e.g., by cutting or breaking

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Magnetic Heads (AREA)
  • Adjustment Of The Magnetic Head Position Track Following On Tapes (AREA)
  • Thin Magnetic Films (AREA)

Abstract

本发明涉及在金属薄膜上借助氮曝光形成的防腐层，其中描述一种用于制造具有金属薄膜的磁换能器的工艺，所述金属薄膜具有通过把薄膜暴露在等离子体室的氮气中而产生的耐腐蚀表面。相信暴露到氮气中能通过在薄膜表面区域内形成氮化物而增加金属薄膜的耐腐蚀性。在优选实施例中，磁换能器的薄膜金属在从晶片切割并研磨之后用氮气进行处理。用于磁换能器中的典型金属是NiMn、FeMn、NiFe、钴、CoFe和铜。通过增加现有技术的保护层，如碳，而进一步保护所述膜。

Description

在金属薄膜上借助氮曝光形成的防腐层
技术领域
本发明一般涉及用于磁存储器件中的薄膜，并更具体地涉及薄膜制造方法，甚至更具体地涉及用于提高金属薄膜耐腐蚀性的薄膜制造方法。
背景技术
在图1中示出现有技术中的典型磁头和盘系统10。在操作中，当磁换能器20在盘16上飞行时，它由悬架13支撑。磁换能器通常称作“磁头”或“滑块”，它由执行写磁转变(写头23)和读磁转变(读头12)任务的元件组成。读和写头12、23(统称为“磁换能器元件”)接收和发出的电信号沿着导电路径(导线)14传送，其中，导电路径14连接到或嵌入在悬架13中。通常有两个分别用于每个读和写头12、23的电接触片(未示出)。电线或导线14连接到这些片，在悬架13中走线，直到臂上电子器件(未示出)。盘16附在主轴18上，主轴18由主轴电机24驱动以使盘16旋转。盘16包括其上淀积多个薄膜21的基片26。薄膜21包括铁磁材料，写头23在铁磁材料中记录磁转变，信息在磁转变中编码。当盘在磁换能器20的空气支承表面(ABS)下旋转时，读头12读取磁转变。
图2是一种现有技术磁换能器20在研磨之前示出的中线部分剖视图。滑块的基底43通常是坚固耐用的材料。所示出的读头12的部件为第一屏蔽(S1)和第二屏蔽(P1/S2)，其中，第一屏蔽(S1)由传感器105包围，传感器105由绝缘层107和109包围。此种类型的磁换能器称作“结合磁头”，因为P1/S2层作为读头12的屏蔽和写头23的极片。该磁轭还包括在背面与P1/S2连接的第二极片(P2)。P2在线圈上蜿蜒而下，跨过写间隙层后与P1面对，以在空气支承表面(ABS)上形成写间隙。零喉部高度(ZTH)被定义成P2首先与间隙层接触的点。传感器105包括诸如坡莫合金的磁阻材料，但也可以是包含各种铁磁和反铁磁材料层的多层结构。屏蔽和极片为铁磁材料，如NiFe或CoFe，同时，诸如TiC或Al2O3的陶瓷材料用于基片。在研磨之前，在ABS上的材料和结构延伸超过ABS。如图2所示，ABS平面右边的材料通过研磨而除去，以实现对传感器105的长度(称作“条纹高度”)和从ZTH到ABS的距离(称作“喉部高度”)的精确控制。锯平面的不确定使条纹高度发生微米级的变化，如果不确定不校正将导致磁性不可接受的变化。研磨是在现有技术中使用的工艺，以实现更严格的纳米级条纹高度控制。在制造薄膜磁换能器的典型工艺中，在晶片上同时形成大量的换能器。在形成基础结构之后，晶片被锯成扇形的、条状的或单个的换能器。在这些阶段的任一个或全部阶段中，可发生进一步的处理。尽管锯切是用于把晶片分离成各个滑块的典型方法，但近来已经用含氟(flourine)等离子体进行活性离子蚀刻(RIE)或深度活性离子蚀刻(DRIE)。与晶片切割时的晶片暴露表面正交的滑块表面形成滑块的空气支承表面(ABS)。在研磨之后，在磁换能器20的ABS上形成通常称作“滑轨”的部件。所述滑轨一般用于确定滑块的空气动力特性，并且用作换能器在旋转或静止时与介质接触的接触区域。
GMR磁头的金属部件在锉平环境中和在滑块制造工艺过程中都容易腐蚀。当从晶片切割条时，金属薄膜暴露，并且一般执行研磨。通常，在研磨之后，通过在薄膜上增加薄的碳或硅保护层而针对局部腐蚀。增加保护层的一个缺陷是在磁传感器和磁介质之间固有地增加间隔，因为该涂层一般约为5-7nm。性能的提高要求更小的传感器-介质间隔以及更薄的涂层，更薄的涂层则导致腐蚀可靠性降低。如果可找到防腐的替代方案，那么就磁性而言，希望取消该涂层。
不是磁头中所有有用的合金都具有相同程度的易腐蚀性，因此，有可能选择具有更高耐腐蚀性的材料。Sakakima等在美国专利4904543中描述在磁薄膜中使用“氮化合金”层以提高耐腐蚀性和耐磨性。具有或没有添加元素的不含氮的铁合金首先在Ar气氛中进行溅射，溅射时间足以在基片上形成所需厚度的不含氮的铁合金，随后，氮气分压从0.1％增加到50％的水平，从而在不含氮的铁合金层上形成氮化合金层。
Baur等在美国专利6436248中描述使用在底层膜之前在基片上淀积的阻挡层，以增加金属基底磁盘的耐腐蚀性。阻挡层优选通过以10-200kHz频率和5∶1到1∶10的脉冲长度-脉冲停顿比进行中频脉冲溅射而淀积形成。铝或铬是用于阻挡层的优选材料。当溅射工艺气体包含一部分氧和/或氮时，据说可实现其它的改进。
Head等在美国专利4130847中论述使用诸如铬的钝化材料层以防止包括极尖的铁镍合金被腐蚀，其中，在换能器的极尖上溅射淀积该钝化材料层。在淀积铬之前，通过溅射蚀刻工艺来蚀刻极片的一部分末稍和薄膜感应换能器的间隙。
发明内容
描述一种用于制造具有金属薄膜的磁换能器的工艺，所述金属薄膜具有通过把薄膜暴露在等离子体室的氮气中而产生的耐腐蚀表面。相信暴露到氮气中能通过在薄膜表面区域内形成氮化物而增加金属薄膜的耐腐蚀性。
根据本发明，提供一种用于制造磁换能器的方法，包括以下步骤：对晶片上的至少一个磁换能器淀积包括金属薄膜的一系列薄膜；与晶片表面大致正交地切割晶片，以对已选择作为磁换能器空气支承表面的薄膜表面进行曝光；以及用含氮等离子体处理金属薄膜的曝光表面。
在优选实施例中，磁换能器的薄膜金属在从晶片切割并研磨之后用氮气进行处理。用于磁换能器中的典型金属是NiMn、FeMn、NiFe、钴、CoFe和铜。通过增加现有技术的保护层，如碳，而进一步保护所述膜。
附图说明
为了更完全地理解本发明的本质和优点以及应用的优选模式，应该参考以下结合附图的详细描述。在以下全部附图中，相同的参考号分配给相同或相似的部件。
图1为示出使用本发明磁换能器的一种磁盘驱动系统的简化符号图。
图2为一种现有技术磁换能器在制造工艺过程中在研磨之前的中线部分剖视图。
图3为图2所示磁换能器类型在根据本发明进行研磨和处理之后的空气支承表面区域的中线部分剖视图。
图4为用于比较根据本发明处理的换能器与未处理换能器的腐蚀属性的实验结果的柱状图。
具体实施方式
本发明可以使用包括金属薄膜的任何磁换能器(磁头)结构，所述薄膜通过使滑块从晶片分离的工艺而进行曝光。图3中的磁换能器元件31的内部结构是根据现有技术的，并且这些结构的细节与本发明无关。尽管在优选实施例中磁换能器在根据本发明进行处理之前先被研磨，但不要求进行研磨来获得本发明的利益。例如，如果能足够精确地执行从晶片分离磁换能器的过程以取消研磨的必要性，本发明就仍然可以使用。
在薄膜处理中使用的产生等离子体并至少有两个电极的各种现有技术设备可用于创造含氮等离子体。例如，等离子体清洗室、物理汽相淀积(PVD)室和化学汽相淀积(CVD)可根据本发明用氮对金属表面进行处理。等离子体的形成和使用是根据现有技术的。通过在适当的条件下对在真空淀积室内的工艺气体施加能量，如射频(RF)或微波能量，形成作为离子和电子混合物的等离子体。施加的能量在该室中使分子形成为离子形式，并激发等离子体。一般而言，可通过改变一个或多个工艺参数，如温度、分压、等离子体密度、气流速度、电源频率、功率电平、室内实际几何形状等，而控制等离子体工艺中的反应速度。如本领域中所熟知的，使用给定装置获得希望结果的精确工艺参数一般是由经验确定的。从而，如下所述，本申请人使用的设备和参数只作为实例，以便为使用他们自己设备、材料和性能目标的本领域中技术人员提供出发点。在本申请人使用的具体工艺中，使用等离子体清洗室。在分压大约为100-300毫乇的基本纯净的N2气上作用大约100-500瓦。在优选实施例中，部分完成的磁换能器的薄膜金属在从晶片分离(一般把晶片锯成条)之后并在研磨之后，用氮等离子体进行表面处理。如图3所示，在现有技术的制造工艺中，此时换能器薄膜的外缘暴露在研磨表面上。在图3中以放大形式示出的换能器具有与图2所示相同的结构。在图3右侧，各种薄膜的共平面边缘统一称作ABS，即使在已完成的换能器中，此表面也在诸如碳的保护涂层之下。包含薄膜的磁换能器条在氮等离子体中处理大约5分钟。相信该处理在薄膜金属的表面层中产生氮化物，所述氮化物在薄膜表面向下延伸进入薄膜，深度为1-2nm数量级，如图3中阴影区域87所示。表面处理区域与膜中没有大量氮的其它部分是可区别的。表面处理区域87不是附加材料的淀积结果，从而，该区域不影响表面平滑度、条纹高度或换能器几何形状的其它方面。
尽管氮是活性元素，但在等离子体中也可存在其它元素，只要它们不干涉氮结合到薄膜中就行。例如，等离子体另外可包括氦、氢和/或氨。由于N2或氮可从其它化合物如氨中得到，因此允许把氮引入到室中，所述化合物在室中离子化而产生氮离子。
可从根据本发明的处理受益的薄膜包括与氮化学结合的任何金属。通常在GMR磁头中优选使用的金属是NiMn、FeMn、NiFe、钴、CoFe、铜、IrMn和PtMn。在金属薄膜如上所述地通过对氮曝光而进行处理之后，可根据现有技术涂敷一个或多个可选的保护涂层。
为了测试耐腐蚀性，对具有NiMn层的磁换能器做实验，以便比较进行和不进行氮处理的腐蚀表现。对任一测试换能器都不涂敷涂层。实验要求在90％相对湿度和50℃下对磁换能器曝光两天。GMR传感器的电阻变化作为腐蚀的衡量标准。尽管没有直接测量其它金属膜如屏蔽中的变化，但认为屏蔽金属的表现与传感器层的表现相似是合理的。一欧姆变化的阈值作为开始腐蚀作用的标记。图4中的柱状图示出在四个实验项目的每一个中，大于一欧姆变化的传感器的百分比。在每个项目中经过氮处理的换能器组一般有少于1％的换能器下降超过该阈值，而未经过处理的控制组有大量的换能器，即大约13-29％，下降超过该阈值。
重要的是应该指出：经过上述氮处理的换能器在GMR条的电阻或幅值方面没有明显的变化。
除了以上描述的材料、厚度值等，在体现本发明的滑块中的层、结构和材料与现有技术一致，并且根据现有技术制造。在本文中描述的成分不考虑少量杂质，本领域中技术人员都知道这些杂质在实际材料中是不可避免的。尽管已在具体实施例中描述本发明，但本发明并不局限于这些实施例，并且本领域中技术人员非常清楚：在本发明范围内的各种变化和变更都是允许的。

Claims (5)

1.一种用于制造磁换能器的方法，包括以下步骤：
对晶片上的至少一个磁换能器淀积包括金属薄膜的一系列薄膜；
与晶片表面大致正交地切割晶片，以对已选择作为磁换能器空气支承表面的薄膜表面进行曝光；以及
用含氮等离子体处理金属薄膜的曝光表面。
2.如权利要求1所述的方法，其中，处理步骤在包括表面的金属薄膜区域中形成氮化物。
3.如权利要求1所述的方法，其中，金属薄膜是从包括NiMn、FeMn、NiFe、钴、CoFe、铜、IrMn和PtMn的组中选择的材料。
4.如权利要求1所述的方法，进一步包括在用含氮等离子体处理薄膜表面的步骤之后淀积保护涂层的步骤。
5.如权利要求1所述的方法，进一步包括在切割步骤之后和在处理步骤之前研磨薄膜表面的步骤。
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