JP5285240B2 - 磁気ヘッド及び磁気ヘッドの製造方法 - Google Patents
磁気ヘッド及び磁気ヘッドの製造方法 Download PDFInfo
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- JP5285240B2 JP5285240B2 JP2007164838A JP2007164838A JP5285240B2 JP 5285240 B2 JP5285240 B2 JP 5285240B2 JP 2007164838 A JP2007164838 A JP 2007164838A JP 2007164838 A JP2007164838 A JP 2007164838A JP 5285240 B2 JP5285240 B2 JP 5285240B2
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- JP
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- Prior art keywords
- film
- magnetic head
- bearing surface
- air bearing
- layer
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3909—Arrangements using a magnetic tunnel junction
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/41—Cleaning of heads
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/4902—Electromagnet, transformer or inductor
- Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
- Y10T29/49032—Fabricating head structure or component thereof
- Y10T29/49048—Machining magnetic material [e.g., grinding, etching, polishing]
Description
これより、炭素膜と磁気抵抗効果膜を隔離するためには、以下の条件のいずれかを満足すればよいことが導かれる。即ち、侵入深さdが、密着膜の膜厚tよりも小さければよいことから、(1)密着膜の膜厚tが、炭素イオンの入射エネルギーを密着膜の阻止能で除した商よりも大きい、(2)炭素膜を形成する際の炭素粒子の入射エネルギーが、密着膜の膜厚tと阻止能dE/dxの積よりも小さい、(3)密着膜の阻止能dE/dxが、炭素膜を形成する際の炭素粒子の入射エネルギーEiを密着膜の膜厚tで除した商によも大きい。上記三つの条件のいずれかを満足するように浮上面保護層を形成することによって、炭素膜と磁気抵抗効果膜を隔離することが可能となる。また、浮上面保護膜(上層)に炭素を含まない構成にすることも、上述の問題を解決する手段である。
実施例2においては、炭素膜114の成膜に陰極真空アーク蒸着法を用いているが、本方法ではカーボンイオンのエネルギーの平均値は50eV程度である。炭素イオンのエネルギーはある程度の分布を有するが、ほとんどのイオンは100eV以下である。ここで、窒化珪素膜112の阻止能dE/dxは100eV/nm程度であることから、窒化珪素膜112の膜厚は1.0nm以上であれば、炭素イオンが窒化珪素膜からなる密着膜112を貫通してTMR膜2に損傷を与えることはなく、良好なSN比を有する磁気ヘッドを製造することができる。
Claims (6)
- 強磁性固定層と強磁性自由層の間に中間層を有する磁気抵抗効果膜と、該磁気抵抗効果膜の上下に配置された下部電極層と上部電極層を有する再生素子を備えた磁気ヘッドであって、
前記中間層は高抵抗特性を有するトンネルバリア層であり、記録媒体対向面側の前記再生素子の表面に、窒化珪素膜からなる密着膜を下層に、炭素を含む浮上面保護膜を上層に配置した浮上面保護層を備え、
前記密着膜の窒素の含有率が、窒化珪素膜中で珪素が窒素によって不活性化されて前記磁気ヘッドのノイズを低減できる、35at%−55at%であり、前記密着膜と浮上面保護膜との合計膜厚が2.5nm以下であることを特徴とする磁気ヘッド。 - 前記密着膜の膜厚は、該密着膜の阻止能をdE/dxとし、前記浮上面保護膜を形成する際の炭素イオンの初期エネルギーをEiとしたとき、Ei/(dE/dx)以上であることを特徴とする請求項1記載の磁気ヘッド。
- さらに、前記再生素子に隣接して配置された磁気誘導型記録素子を備えたことを特徴とする請求項1または2記載の磁気ヘッド。
- ウェハ上に磁気抵抗効果膜を有する磁気ヘッド素子を複数形成する工程と、
前記ウェハをローバーに切断する工程と、
前記ローバーの浮上面を機械研磨する工程と、
前記機械研磨した浮上面をイオンビーム又はガスプラズマを用いてクリーニングする工程と、
前記クリーニングを行った浮上面に対して窒素の含有率が、窒化珪素膜中で珪素が窒素によって不活性化されて前記磁気ヘッド素子のノイズを低減できる、35at%−55at%の窒化珪素からなる密着膜を形成する工程と、
前記密着膜の形成に続いて、炭素イオンが前記密着膜を貫通しない程度の初期エネルギーを持つ成膜法で炭素を含む浮上面保護膜を形成する工程と、
前記浮上面保護膜を形成した浮上面にレールを形成する工程と、
前記ローバーを前記磁気ヘッド素子毎に切断する工程と、
を備えたことを特徴とする磁気ヘッドの製造方法。 - 前記浮上面保護膜は、陰極真空アーク蒸着法を用いて形成することを特徴とする請求項4記載の磁気ヘッドの製造方法。
- 前記浮上面保護膜は、スパッタリング法を用いて形成することを特徴とする請求項4記載の磁気ヘッドの製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007164838A JP5285240B2 (ja) | 2007-06-22 | 2007-06-22 | 磁気ヘッド及び磁気ヘッドの製造方法 |
US12/214,748 US20080316656A1 (en) | 2007-06-22 | 2008-06-20 | Magnetic head and method of manufacturing the magnetic head |
CN200810125361.3A CN101329873B (zh) | 2007-06-22 | 2008-06-20 | 磁头及制造磁头的方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007164838A JP5285240B2 (ja) | 2007-06-22 | 2007-06-22 | 磁気ヘッド及び磁気ヘッドの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009004039A JP2009004039A (ja) | 2009-01-08 |
JP5285240B2 true JP5285240B2 (ja) | 2013-09-11 |
Family
ID=40136231
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007164838A Expired - Fee Related JP5285240B2 (ja) | 2007-06-22 | 2007-06-22 | 磁気ヘッド及び磁気ヘッドの製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20080316656A1 (ja) |
JP (1) | JP5285240B2 (ja) |
CN (1) | CN101329873B (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7911741B2 (en) * | 2007-04-30 | 2011-03-22 | Hitachi Global Storage Technologies, Netherlands, B.V. | Slider overcoat for noise reduction of TMR magnetic transducer |
US7855861B2 (en) * | 2007-04-30 | 2010-12-21 | Hitachi Global Storage Technologies, Netherlands, B.V. | Insulator barrier for noise reduction of a TMR magnetic transducer |
TWI487916B (zh) | 2013-03-06 | 2015-06-11 | Univ Nat Taiwan | 磁場探針及其探針頭 |
US20160180871A1 (en) * | 2013-07-31 | 2016-06-23 | Hewlett-Packard Development Company, L.P. | Coating magnetic tape heads |
US9852755B2 (en) * | 2016-04-28 | 2017-12-26 | Tdk Corporation | Thin film magnetic head, head gimbals assembly, head arm assembly, and magnetic disk unit |
CN109270937A (zh) * | 2018-11-15 | 2019-01-25 | 中国人民解放军海军航空大学青岛校区 | 一种磁钉、电磁铁阵列、基于电磁铁阵列的agv导航方法及其agv |
Family Cites Families (12)
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US5192618A (en) * | 1991-04-26 | 1993-03-09 | International Business Machines Corporation | Corrosion protection by femn by ion implantation |
JPH09212814A (ja) * | 1996-01-31 | 1997-08-15 | Nec Corp | 保護被膜と保護被膜を有する磁気ヘッドスライダおよび磁気ディスク装置 |
JP3992125B2 (ja) * | 1999-04-08 | 2007-10-17 | Tdk株式会社 | 薄膜磁気ヘッド及びその保護膜形成方法 |
JP2005310300A (ja) * | 2004-04-23 | 2005-11-04 | Shinka Jitsugyo Kk | 薄膜磁気ヘッド装置の製造方法、薄膜磁気ヘッド装置、該薄膜磁気ヘッド装置を備えたヘッドジンバルアセンブリ及び該ヘッドジンバルアセンブリを備えた磁気ディスク装置 |
JP4131720B2 (ja) * | 2004-08-31 | 2008-08-13 | 富士通株式会社 | 磁気記録媒体、ヘッドスライダおよびそれらの製造方法 |
JP2006107607A (ja) * | 2004-10-05 | 2006-04-20 | Hitachi Global Storage Technologies Netherlands Bv | 磁気ヘッド及びその製造方法 |
US7477482B2 (en) * | 2005-04-19 | 2009-01-13 | International Business Machines Corporation | Magnetic recording head |
JP2006344728A (ja) * | 2005-06-08 | 2006-12-21 | Alps Electric Co Ltd | 磁気検出素子及びその製造方法 |
JP4039678B2 (ja) * | 2005-08-22 | 2008-01-30 | アルプス電気株式会社 | 薄膜磁気ヘッド |
JP2007095750A (ja) * | 2005-09-27 | 2007-04-12 | Canon Anelva Corp | 磁気抵抗効果素子 |
US8014104B2 (en) * | 2007-03-21 | 2011-09-06 | Sae Magnetics (Hk) Ltd. | Magnetic head/disk with transition metal oxynitride adhesion/corrosion barrier and diamond-like carbon overcoat bilayer |
US7911741B2 (en) * | 2007-04-30 | 2011-03-22 | Hitachi Global Storage Technologies, Netherlands, B.V. | Slider overcoat for noise reduction of TMR magnetic transducer |
-
2007
- 2007-06-22 JP JP2007164838A patent/JP5285240B2/ja not_active Expired - Fee Related
-
2008
- 2008-06-20 CN CN200810125361.3A patent/CN101329873B/zh not_active Expired - Fee Related
- 2008-06-20 US US12/214,748 patent/US20080316656A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20080316656A1 (en) | 2008-12-25 |
JP2009004039A (ja) | 2009-01-08 |
CN101329873B (zh) | 2012-12-19 |
CN101329873A (zh) | 2008-12-24 |
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