CN1318529C - 用于金属化学机械抛光的新型浆料 - Google Patents
用于金属化学机械抛光的新型浆料 Download PDFInfo
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- CN1318529C CN1318529C CNB2004100806349A CN200410080634A CN1318529C CN 1318529 C CN1318529 C CN 1318529C CN B2004100806349 A CNB2004100806349 A CN B2004100806349A CN 200410080634 A CN200410080634 A CN 200410080634A CN 1318529 C CN1318529 C CN 1318529C
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- 239000002002 slurry Substances 0.000 title claims abstract description 90
- 229910052751 metal Inorganic materials 0.000 title abstract description 45
- 239000002184 metal Substances 0.000 title abstract description 45
- 238000005498 polishing Methods 0.000 title abstract description 17
- 239000000126 substance Substances 0.000 title abstract description 12
- 150000002739 metals Chemical class 0.000 title abstract description 4
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000007853 buffer solution Substances 0.000 claims abstract description 13
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 6
- 238000005260 corrosion Methods 0.000 claims description 5
- 230000007797 corrosion Effects 0.000 claims description 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 4
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 4
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 4
- 239000003112 inhibitor Substances 0.000 claims description 4
- 150000007524 organic acids Chemical class 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- SCVFZCLFOSHCOH-UHFFFAOYSA-M potassium acetate Chemical compound [K+].CC([O-])=O SCVFZCLFOSHCOH-UHFFFAOYSA-M 0.000 claims description 4
- 229960001866 silicon dioxide Drugs 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 239000013543 active substance Substances 0.000 claims description 3
- WJLUBOLDZCQZEV-UHFFFAOYSA-M hexadecyl(trimethyl)azanium;hydroxide Chemical compound [OH-].CCCCCCCCCCCCCCCC[N+](C)(C)C WJLUBOLDZCQZEV-UHFFFAOYSA-M 0.000 claims description 3
- 150000003839 salts Chemical class 0.000 claims description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims description 2
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 claims description 2
- 239000004260 Potassium ascorbate Substances 0.000 claims description 2
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 claims description 2
- 239000012964 benzotriazole Substances 0.000 claims description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 claims description 2
- IRXRGVFLQOSHOH-UHFFFAOYSA-L dipotassium;oxalate Chemical compound [K+].[K+].[O-]C(=O)C([O-])=O IRXRGVFLQOSHOH-UHFFFAOYSA-L 0.000 claims description 2
- -1 organic acid salt Chemical class 0.000 claims description 2
- 235000006408 oxalic acid Nutrition 0.000 claims description 2
- 235000011056 potassium acetate Nutrition 0.000 claims description 2
- 235000019275 potassium ascorbate Nutrition 0.000 claims description 2
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- 239000001508 potassium citrate Substances 0.000 claims description 2
- QEEAPRPFLLJWCF-UHFFFAOYSA-K potassium citrate (anhydrous) Chemical compound [K+].[K+].[K+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O QEEAPRPFLLJWCF-UHFFFAOYSA-K 0.000 claims description 2
- CONVKSGEGAVTMB-RXSVEWSESA-M potassium-L-ascorbate Chemical compound [K+].OC[C@H](O)[C@H]1OC(=O)C(O)=C1[O-] CONVKSGEGAVTMB-RXSVEWSESA-M 0.000 claims description 2
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- 238000004519 manufacturing process Methods 0.000 abstract description 8
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- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 12
- 229910052707 ruthenium Inorganic materials 0.000 description 12
- 239000000758 substrate Substances 0.000 description 12
- 239000000945 filler Substances 0.000 description 11
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- 229910001925 ruthenium oxide Inorganic materials 0.000 description 9
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 9
- 239000010970 precious metal Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 229910017083 AlN Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 2
- 150000002170 ethers Chemical class 0.000 description 2
- ICIWUVCWSCSTAQ-UHFFFAOYSA-M iodate Chemical compound [O-]I(=O)=O ICIWUVCWSCSTAQ-UHFFFAOYSA-M 0.000 description 2
- 229940005633 iodate ion Drugs 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- XRFHCHCLSRSSPQ-UHFFFAOYSA-N strontium;oxygen(2-);titanium(4+) Chemical class [O-2].[O-2].[O-2].[Ti+4].[Sr+2] XRFHCHCLSRSSPQ-UHFFFAOYSA-N 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- LWIHDJKSTIGBAC-UHFFFAOYSA-K tripotassium phosphate Chemical compound [K+].[K+].[K+].[O-]P([O-])([O-])=O LWIHDJKSTIGBAC-UHFFFAOYSA-K 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 206010010144 Completed suicide Diseases 0.000 description 1
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical group OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 description 1
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 235000017858 Laurus nobilis Nutrition 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N Oxozirconium Chemical compound [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 235000005212 Terminalia tomentosa Nutrition 0.000 description 1
- 244000125380 Terminalia tomentosa Species 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- UOTBHSCPQOFPDJ-UHFFFAOYSA-N [Hf]=O Chemical compound [Hf]=O UOTBHSCPQOFPDJ-UHFFFAOYSA-N 0.000 description 1
- XDXSUJKMVSURTH-UHFFFAOYSA-N [O--].[O--].[O--].[O--].[O--].[Sc+3].[Ta+5].[Pb++] Chemical compound [O--].[O--].[O--].[O--].[O--].[Sc+3].[Ta+5].[Pb++] XDXSUJKMVSURTH-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- VKJLWXGJGDEGSO-UHFFFAOYSA-N barium(2+);oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[O-2].[Ti+4].[Ba+2] VKJLWXGJGDEGSO-UHFFFAOYSA-N 0.000 description 1
- 229910052728 basic metal Inorganic materials 0.000 description 1
- 150000003818 basic metals Chemical class 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000009415 formwork Methods 0.000 description 1
- 229950006191 gluconic acid Drugs 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 230000007096 poisonous effect Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229940093916 potassium phosphate Drugs 0.000 description 1
- 229910000160 potassium phosphate Inorganic materials 0.000 description 1
- 235000011009 potassium phosphates Nutrition 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- RPEUFVJJAJYJSS-UHFFFAOYSA-N zinc;oxido(dioxo)niobium Chemical compound [Zn+2].[O-][Nb](=O)=O.[O-][Nb](=O)=O RPEUFVJJAJYJSS-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- 229910021355 zirconium silicide Inorganic materials 0.000 description 1
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-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
- C23F3/06—Heavy metals with acidic solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/65—Electrodes comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
一种用于去除金属的浆料,通常用在集成电路的制造过程中,并且特别用于贵金属的化学机械抛光,该浆料可以通过组合高碘酸、研磨剂和缓冲体系来形成,其中浆料的pH值在约4至约8之间。
Description
技术领域
本发明一般地涉及微电子加工领域,更具体地说,本发明涉及用于金属化学机械抛光的浆料(slurry)与方法。
背景技术
微电子器件的制造包括多种电子器件的制造,例如在硅或其它半导体晶圆上或内的电容器、晶体管和二极管的制造,并且随后利用金属线、插栓(plug)和过孔互连这些器件。
在制造微电子器件期间,多层不同材料被交替沉积在彼此之上,并且随后被部分去除。本领域公知的用于去除衬底(例如半导体晶圆)上的多个层的一种技术是化学机械抛光(chemical-mechanical polishing,CMP)。在CMP操作中,CMP浆料被施加到诸如金属层的一个层上,其中浆料起到化学和机械两种功能。
从化学上分析,浆料通常含有氧化剂,该氧化剂通过从金属层去除电子可以氧化金属层。形成的氧化薄膜随后能够由CMP工艺去除。
从机械上分析,上述这种浆料还包括诸如二氧化硅(SiO2)或二氧化铈(CeO2)的研磨剂。研磨剂的用途是当将抛光垫用力压到氧化薄膜上并在其上移动时,可以磨损该氧化薄膜,从而去除该薄膜。
一旦去除了氧化薄膜,新暴露的金属可能再次被氧化以形成另一层氧化薄膜,并再次使用该研磨剂去除氧化薄膜。该工艺一直持续到将金属层去除到所需深度。然而,对于化学稳定且机械坚硬的材料来说,例如贵金属,可能很难氧化这样的薄膜。因此,对于贵金属,用于CMP工艺的常用浆料可能无法从器件去除这样的层。
与CMP浆料使用相关联的另一个问题是,它们通常具有约小于3的pH值。具有约小于3的pH值的浆料趋向于具有腐蚀性,并且可能引起对化学机械抛光操作中使用的抛光设备的损害。此外,具有约小于2的pH值的浆料被认为是有害物质,因此需要特殊的处理程序,这会增加制造成本。例如,如果在约2的pH值下氧化,则钌可能形成有毒、并具有爆炸性的RuO4。此外,低pH值的浆料容易发生反应,并且引起抛光设备的腐蚀。因此,已经发现低pH值的浆料不适于在集成电路工艺中制造化学机械抛光薄膜。
因此,需要一种改进的浆料,用于诸如贵金属之类的金属的化学机械抛光。本发明提供了这样的浆料及其关联的方法、结构。
发明内容
为解决上述问题,根据本发明的一个方面,提供了一种浆料,所述浆料包括:研磨剂;以及高碘酸,其中所述浆料的pH值在约4至约8之间。
根据本发明的另一个方面,提供了一种形成微电子结构的方法,所述方法包括:提供包括被布置于粘附层上的阻挡层的衬底,其中所述粘附层被布置于衬底的第一表面上和凹槽内;以及用浆料从所述粘附层去除所述阻挡层,其中所述浆料包括高碘酸,并且pH值在约4至约8之间。
根据本发明的另一个方面,提供了一种形成微电子结构的方法,所述方法包括:提供包括凹槽的衬底,其中功函数层被布置于凹槽中和所述凹槽的第一表面上,并且其中填充金属层被布置于所述功函数层上;以及通过下述步骤形成金属栅电极:通过使用包括高碘酸、pH值在约4至约8之间的浆料,去除所述填充金属层,直到暴露出下面的所述功函数层;以及用所述浆料从所述凹槽的所述第一表面去除所述功函数层。
根据本发明的另一个方面,提供了一种金属栅极结构,所述结构包括:电介质层;功函数层,其中所述功函数层含有足量杂质,以将所述功函数层的功函数移动至少约0.1eV;以及包括铜的金属填充层。
通过本发明,提供了去除微电子结构中的金属的方法与浆料,并且由于浆料的pH值在中性附近,解决了上述可能产生有害物质的问题。
附图说明
尽管本发明的权利要求书具体指出并明确要求了被认为是本发明的内容,但是当结合附图阅读下文对本发明的说明时,可以更容易地确定本发明的优点,其中:
图1a-1f示出了在执行本发明方法的实施例的时候可以形成的结构的横截面;
图2a-2f示出了在执行本发明方法的实施例的时候可以形成的结构的横截面;
图3示出了根据本发明实施例的方法的流程图。
具体实施方式
在下文详细的描述中,所参考的附图以图示的方式示出了可以实施本发明的具体实施例。这些实施例被描述得足够详细,使得本领域普通技术人员能够实现本发明。应当理解,尽管本发明的多个实施例有所不同,但是不必相互不相容。例如,这里结合一个实施例描述的具体特征、结构或特性可以在不脱离本发明的精神和范围的情况下在其它实施例中实现。此外,应当理解,在不脱离本发明的精神和范围的情况下,可以修改每个所公开实施例中的个别元件的位置和安排。因此,下文详述的说明不应认为具有限制意义,本发明的范围仅由权利要求定义,并且连同权利要求赋予的等同物的全部范围来合适地解释。附图中,几个附图之间类似的标号指代相同或相似的功能性。
这里公开了用于去除金属的浆料和方法。可以通过组合高碘酸(HIO4)、研磨剂和缓冲体系形成浆料,其中浆料的pH值保持在pH值约4至约8之间。可以使用本发明的浆料和方法形成微电子器件制备中常用的金属栅电极或金属互连结构,然而,本发明的浆料和方法还可以用于制造微电子器件的其它工艺中,以及微电子器件加工之外的其它领域。
根据本发明,用于化学机械抛光的示例性浆料具有约4至约8之间的pH值,并且优选地在约6.7和约7.1之间。本实施例的浆料可以含有研磨剂,例如二氧化硅、二氧化铈、氧化锆或氧化铝、或者任何其它合适的研磨剂。浆料可以含有按重量计约1%至30%之间的研磨剂,并且优选地可以包括按重量计约1%至5%的研磨剂。
本发明的浆料可以维持在pH值约4至约8之间,并且最优选维持在pH值约6.7至约7.1之间,其是中性pH值。浆料可以通过使用缓冲体系而维持这样的pH值范围,所述缓冲体系用来稳定pH值。缓冲体系可以包括有机酸和有机酸盐。这种缓冲体系的示例含有乙酸/乙酸钾、柠檬酸/柠檬酸钾、碳酸/碳酸氢钾、磷酸/磷酸钾、草酸/草酸钾和抗坏血酸/抗坏血酸钾。
浆料可以包括氧化剂,优选为摩尔浓度在约0.005M至约0.05M的范围内的高碘酸(HIO4)。高碘酸供应碘酸盐离子(IO- 4),其可以氧化(去除电子)金属,所述金属包括诸如钌的贵金属。对于钌的情形,浆料的碘酸盐离子可以根据下面的方程式来氧化钌层:
7Ru(s)+4IO- 4+4H+→7RuO2+2I2+2H2O
可以以正4价氧化态形成氧化钌,例如RuO2。本发明的浆料的优点是由于浆料维持在接近中性pH值,钌层可以被氧化为正4价氧化态,而如果浆料维持在低pH值,如现有技术中的浆料那样,则这样形成的氧化钌很可能是正8价氧化态(如RuO4)。本领域技术人员公知RuO4是高爆炸性的并且是有毒的,因此不适于微电子器件的制造。
因此,本实施例的浆料包括近似为4至8之间的pH值,并含有研磨剂、作为氧化剂的高碘酸和缓冲体系。如本领域所公知的那样,本发明的浆料还可以包括苯并三唑作为腐蚀抑制剂。这些成分通常用水来组合在一起以形成浆料。图3图示了一个流程图,其中在步骤310可以在水中组合缓冲体系和研磨剂。在步骤320,还可以将高碘酸组合到浆料,并且在步骤330,还可以将腐蚀抑制剂组合到浆料。在步骤340,还可以组合表面活性剂以形成本发明的浆料,其中表面活性剂例如是季盐或乙氧基醚类(ethoxylate ether),季盐可以包括十六烷基三甲基氢氧化铵(CTAOH),乙氧基醚类例如是葡糖酸(glucolic acid)、聚乙氧基化物(exthoxylate)和月桂醚(laurel ether)。
图1a-1f图示了通过使用本发明的浆料进行化学机械抛光金属层而形成微电子结构的方法实施例。图1a图示了衬底100的一部分,如本领域所公知的,其可以包括电介质101,例如层间电介质层(ILD)。衬底100还可以包括凹槽106。可以在凹槽106的底部109和侧壁107上以及在衬底100的第一表面108上形成粘附层102。多种材料可以用作粘附层102。例如钛、氮化钛、钽、氮化钽以及它们的组合。可以通过本领域公知的各种沉积技术形成粘附层,所以这里不再进行讨论。
可以在粘附层102上布置阻挡层104。阻挡层104可以包括贵金属或贵金属氧化物,可以包括氧化钌、钌、铼、铑、钯、银、锇、铱、铂和金以及它们的组合。可以使用本领域公知的任何数量的沉积工艺将阻挡层104沉积在粘附层102上,例如各种本领域技术人员公知的溅射沉积技术。在优选实施例中,阻挡层104可以包括氧化钌层,其随后通过提供导电路径可以用作支路,所述导电路径允许例如互连结构的微电子结构即使在互连结构中形成空隙的情况下也能保持功能。
阻挡层104还可以用作金属层110的晶种层,其中金属层110可以形成在阻挡层104上(图1b)。可以使用本领域公知的各种电镀技术来电镀金属层110,或者可以使用气相沉积工艺形成金属层110。阻挡层104还可以用作防止金属层110向外扩散的屏障。金属层110优选地可以包括铜,或者可以由其它金属制成,例如钨。
如图1c所示,前述种类的浆料114随后可以被施加到金属层110上。在一个实施例中,浆料114可以包括摩尔浓度在约0.01至约0.06之间的高碘酸和柠檬酸缓冲体系。浆料的pH值可以维持在约4至约8之间,并且优选地在约6.8至约7.1之间。众所周知,在常规化学机械抛光工艺期间,晶圆可能被正面朝下放置在覆盖有抛光垫的旋转台上,抛光垫已经涂覆了浆料,例如是本发明的浆料114。可以附着于旋转轴的载体被用来向晶圆的背部施加向下的压力。通过施加下压力并且旋转晶圆,同时旋转其上具有浆料的抛光垫,可以从薄膜的表面去除期望数量的材料,例如去除本发明的金属层110。
在化学机械抛光工艺期间,可以以前述的方式去除在化学机械抛光工艺期间形成的金属层110的氧化部分112。本领域普通技术人员将认识到,浆料还可以包括足量的研磨剂以帮助去除氧化部分112,所述研磨剂例如是二氧化硅、氧化锆、氧化铝和/或二氧化铈。
在本实施例中,在化学机械抛光工艺期间可以施加约1.5psi的下压力、约150rpm的晶圆旋转速率和约60ccm的浆料流速。应当理解,取决于具体应用,化学机械抛光工艺的各种参数可以变化。在本实施例中,包括金属铜的金属层110的去除速率可以在每分钟约250至约800埃之间。如图1d所示,化学机械抛光工艺可以持续到金属层110被基本去除,并且下面的阻挡层104被暴露出来(图1d)。
如图1e所示,浆料114可以被施加到暴露的阻挡层104上。本步骤的浆料114可以包括摩尔浓度在约0.004至约0.006摩尔每升之间的高碘酸和柠檬酸缓冲体系,约1.5psi的下压力,约150rpm的晶圆旋转速率以及约60ccm的浆料流速。浆料的pH值可以维持在约4至约8之间,并且优选地在约6.8至约7.1之间。在本实施例中,包括钌或氧化钌材料的阻挡层104的去除速率可以在每分钟约900至约1500埃之间。本领域普通技术人员将认识到,随着浆料114的pH值降低,包括钌材料的阻挡层104的去除速率趋于升高。重复该化学机械抛光工艺直到如图1f所示去除了阻挡层104。
在另一个实施例中,浆料可以包括摩尔浓度在约0.01至约0.06之间的高碘酸。浆料的pH值可以维持在约4至约8之间,并且优选地在约6.8至约7.1之间。在这种情况下,包括钌材料的阻挡层的蚀刻速率可以至少为每分钟约1000埃。
因此,可以使用本发明的浆料和方法形成微电子结构(图1f),例如本领域公知的导电互连结构。
图2a-2f图示了通过使用本发明的浆料进行化学机械抛光材料层而形成微电子结构的另一个方法实施例。图2a图示了衬底200的一部分,如本领域所公知的,其可以包括电介质201,例如层间电介质层(ILD)。衬底200还可以包括凹槽206。
可以将电介质层203布置在凹槽206的底部207上。电介质层203可以是本领域公知的栅电介质层。电介质层203还可以包括高k电介质层,并且可以包括从由二氧化铪、氧硅化铪、氧化镧、氧化锆、氧硅化锆、氧化钛、氧化钽、氧化钛锶钡、氧化钛钡、氧化钛锶、氧化钇、氧化铝、氧化钽钪铅和铌酸锌铅组成的组中选择的材料。
可以在电介质层203和凹槽206的侧壁207以及衬底200的第一表面208上布置功函数层(work function layer)204。功函数层204可以包括钌、氧化钌、氮化钛、钛、铝、碳化钛、氮化铝以及它们的组合。
可以使用本领域公知的各种沉积工艺形成功函数层204。功函数层204优选地可以包括被添加到功函数层204的杂质,这些杂质可以升高或降低功函数层204的功函数。可以使用本领域公知的各种掺杂工艺将杂质添加到功函数层204,例如离子注入技术或原位掺杂技术。那些杂质可以包括镧系金属、碱金属、碱土金属、钪、锆、铪、铝、钛、钽、铌、钨、氮、氯、氧、氟和溴。取决于应用,功函数层204可以含有的杂质量可能变化,但是优选地杂质量应足以将功函数层的功函数移动至少约0.1eV。
可以在功函数层204上布置填充金属层210(图2b)。填充金属层210可以包括铜、钛、氮化钛、钨以及它们的组合,当然还可以包括其它导电材料。在一个实施例中,填充金属层可以包括铜材料。浆料214可以被施加到该填充金属层210上(图2c),其去除填充金属层210的氧化部分212。在一个实施例中,浆料可以包括摩尔浓度在约0.01至约0.06之间的高碘酸和柠檬酸缓冲体系。浆料的pH值可以维持在约4至约8之间,并且优选地在约6.8至约7.1之间。在本实施例中,包括金属铜的填充金属层210的去除速率可以在每分钟约250至约800埃之间。
在去除填充金属层210之后,暴露出下面的功函数层204(图2d)。浆料214可以被施加到功函数层210(图2e),其去除功函数层210的氧化部分212。在一个实施例中,浆料可以包括摩尔浓度在约0.004至约0.006之间的高碘酸和柠檬酸缓冲体系。浆料的pH值可以维持在约4至约8之间,并且优选地在约6.8至约7.1之间。在本实施例中,包括钌或氧化钌材料的功函数层210的去除速率可以在每分钟约900至约1500埃之间。
在使用上述浆料的另一个实施例中,可以以每分钟约500埃至每分钟约700埃的去除速率去除包括氮化钛、氮化铝材料的功函数层。
在使用上述浆料的另一个实施例中,可以以每分钟约150埃至每分钟约350埃的去除速率去除包括铝钛材料的功函数层。
在另一个实施例中,浆料可以包括摩尔浓度在约0.01至约0.06之间的高碘酸和柠檬酸缓冲体系。浆料的pH值可以维持在约4至约8之间,并且优选地在约6.8至约7.1之间。在本实施例中,可以以每分钟至少约1000埃的去除速率去除包括钌或氧化钌材料的功函数层210。
因此,可以形成包括填充金属层210的金属栅极结构(图2f),所述填充金属层210被布置在功函数层104上,所述功函数层104被布置在电介质层203上。如上所述,本发明提供了通过使用本发明的浆料形成微电子器件的浆料、方法和关联结构。本发明的浆料、方法和结构能够从微电子器件去除诸如钌的贵金属。
尽管前面的说明已经详细描述了可以在本发明的方法中使用的某些步骤和材料,但是本领域普通技术人员将认识到,可以进行许多修改和替换。因此,所有这些修改、改变、替换和添加都被认为落于权利要求所定义的本发明的精神与范围之内。此外,应当认识到,在用于制造微电子器件的衬底(诸如硅衬底)上的多层结构在本领域中是众所周知的。因此应当理解,这里提供的附图仅仅示出了与本发明的实现有关的示例性微电子器件的某些部分。从而本发明不限于这里所描述的结构。
Claims (9)
1.一种浆料,包括:
研磨剂,以及
高碘酸,
其中所述浆料的pH值在4至8之间,且所述高碘酸的摩尔浓度在0.004M至0.006M之间。
2.如权利要求1所述的浆料,还包括腐蚀抑制剂。
3.如权利要求2所述的浆料,其中,所述腐蚀抑制剂包括1-苯并三唑。
4.如权利要求1所述的浆料,还包括缓冲体系,所述缓冲体系包括有机酸和所述有机酸的盐。
5.如权利要求4所述的浆料,其中,所述有机酸从包括柠檬酸、乙酸、碳酸、草酸和抗坏血酸的组中选择。
6.如权利要求4所述的浆料,其中,所述有机酸的所述盐从包括柠檬酸钾、乙酸钾、碳酸氢钾、草酸钾和抗坏血酸钾的组中选择。
7.如权利要求1所述的浆料,其中,所述研磨剂从包括二氧化硅、氧化铝、氧化锆和二氧化铈的组中选择。
8.如权利要求1所述的浆料,还包括表面活性剂。
9.如权利要求8所述的浆料,其中,所述表面活性剂选自由十六烷基三甲基氢氧化铵组成的组。
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US20060099817A1 (en) | 2006-05-11 |
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