CN1314101C - 具有混合电介质的可靠低k互连结构 - Google Patents

具有混合电介质的可靠低k互连结构 Download PDF

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Publication number
CN1314101C
CN1314101C CNB2003801033040A CN200380103304A CN1314101C CN 1314101 C CN1314101 C CN 1314101C CN B2003801033040 A CNB2003801033040 A CN B2003801033040A CN 200380103304 A CN200380103304 A CN 200380103304A CN 1314101 C CN1314101 C CN 1314101C
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China
Prior art keywords
dielectric layer
layer
hard mask
mask layer
dielectric
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Expired - Lifetime
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CNB2003801033040A
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English (en)
Chinese (zh)
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CN1711635A (zh
Inventor
约翰·菲茨西蒙斯
斯蒂芬·格雷科
李加
斯蒂芬·盖茨
特里·斯普纳
马修·安格耶尔
哈彼·希克里
西奥尔多卢斯·斯坦戴尔特
格伦·比厄里
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Core Usa Second LLC
GlobalFoundries Inc
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International Business Machines Corp
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Publication of CN1711635A publication Critical patent/CN1711635A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H10W20/075—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers of multilayered thin functional dielectric layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/084—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/47—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts comprising two or more dielectric layers having different properties, e.g. different dielectric constants

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
CNB2003801033040A 2002-11-14 2003-11-07 具有混合电介质的可靠低k互连结构 Expired - Lifetime CN1314101C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/294,139 US6917108B2 (en) 2002-11-14 2002-11-14 Reliable low-k interconnect structure with hybrid dielectric
US10/294,139 2002-11-14

Publications (2)

Publication Number Publication Date
CN1711635A CN1711635A (zh) 2005-12-21
CN1314101C true CN1314101C (zh) 2007-05-02

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Family Applications (1)

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CNB2003801033040A Expired - Lifetime CN1314101C (zh) 2002-11-14 2003-11-07 具有混合电介质的可靠低k互连结构

Country Status (8)

Country Link
US (2) US6917108B2 (https=)
EP (1) EP1561241A1 (https=)
JP (2) JP2006506806A (https=)
KR (1) KR100773003B1 (https=)
CN (1) CN1314101C (https=)
AU (1) AU2003279460A1 (https=)
TW (1) TWI234231B (https=)
WO (1) WO2004044978A1 (https=)

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Also Published As

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US7135398B2 (en) 2006-11-14
EP1561241A1 (en) 2005-08-10
TWI234231B (en) 2005-06-11
US20050023693A1 (en) 2005-02-03
JP2006506806A (ja) 2006-02-23
JP2011061228A (ja) 2011-03-24
WO2004044978A1 (en) 2004-05-27
US6917108B2 (en) 2005-07-12
AU2003279460A1 (en) 2004-06-03
TW200419714A (en) 2004-10-01
KR20050074996A (ko) 2005-07-19
CN1711635A (zh) 2005-12-21
KR100773003B1 (ko) 2007-11-05
US20040094839A1 (en) 2004-05-20

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