CN1307792A - 具有粗导电结构和至少一个具有精细导电结构的区域的印刷电路板的制造方法 - Google Patents
具有粗导电结构和至少一个具有精细导电结构的区域的印刷电路板的制造方法 Download PDFInfo
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Abstract
将粗导电结构(GL)和精细导电结构(FL)在一个共同的金属层腐蚀过程中腐蚀出来,此时在粗导电结构(GL)的区域中使用借助照相印刷术结构化的耐腐蚀层和在精细导电结构区域使用借助激光射线结构化的耐腐蚀层。
Description
从DE 32 45 272 A1中已知微型厚膜电路和薄膜电路的制造方法,其中为了显著提高导电轨迹密度,至少首先在安排微型导电轨迹几何形状的某些区域基片的整个面积层上涂上导电材料,和然后借助于按照负版面设计程序控制的,根据基片调整的激光器将这个层分成相互分开的,至少部分地各自构成为导电轨迹子面积和/或回路。当将很多IC-衬垫与周围外设连接时,由于发散的激光器燃烧轨迹形成星状分布的导电轨迹,IC-面很窄和各自从属于紧密排列的衬垫,和将IC-面及其拓宽的,位于外边的端部引导到外设接头上。通过激光器燃烧轨迹的螺旋形状导向将整个面积导电层也可以构成为电感的。其中通过螺旋形状的装置可以将各自在两个激光器燃烧轨迹之间的导电轨迹达到非常紧凑的和因此节省位置的电感结构。
从EP 0 602 258 A1中已知制造具有粗导电结构印刷电路板的一种方法,然而在其中这种印刷电路板被限制的区域应该得到很高的布线密度。这是通过只在被限制的区域附加布线位置达到的,和与位于下面的布线位置经过触点通孔相连接。
从EP 0 62 300 A2中已知制造印刷电路板的一种方法,其中在整个面积金属层上涂上金属耐腐蚀层借助于激光射线有选择地又将不对应于导电结构的区域去除和通过将这样形成的金属层腐蚀掉形成导电结构。
从DE 41 31 065 A1中已知制造印刷电路板的一种方法,其中在基片上先后涂上一种金属层和一种金属的或者有机的耐腐蚀层,将这种耐腐蚀层借助于激光射线将直接靠近以后的导电轨迹图形的边界区去除和因此将露出来的金属层这样腐蚀掉,将导电轨迹图形和通过腐蚀坑因此不导电的金属层的岛区保留在金属层上。借助于激光射线结构化可以快速进行,因为准备去除的耐腐蚀层的区域必须只有很小的宽度和在两个导电轨迹之问比较大的面积保留不动。
在权利要求1中说明的本发明的问题是,创建一种经济的和容易实施的制造印刷电路板的方法,这种印刷电路板在至少一个被限制的区域中具有高的导电轨迹密度。
本发明是以以下知识为基础的,通过将制造粗导电结构的传统照相腐蚀技术与制造精细导电结构的激光结构化组合在一起将处理过程可以这样先后协调,可以在一个共同的腐蚀过程中形成粗和精细导电结构。
制造精细导电结构原则上也有可能使用传统的照相腐蚀技术。然而在这里必须使用特别高质量的耐光层,特别高质量的光源和特别高质量的光掩膜和在无尘室中进行工作。通过使用精细导电结构的激光结构化可以废除所有这些措施,同时达到很高的去除率目标。
在本发明的意义上关于粗导电结构理解为具有导电轨迹宽度和导电轨迹距离大于100μm的结构,而关于精细导电结构理解为具有导电轨迹宽度和导电轨迹距离为100μm和小于100μm的结构。
将本发明有利的实施例叙述在权利要求2至11中。
按照权利要求2的实施例有可能不仅在粗导电结构区域而且在精细导电结构区域制造触点通孔。
按照权利要求3的改进有可能通过金属加强层在粗导电结构区域制造最可靠的触点通孔。
按照权利要求4的实施例在需要的情况下当去除粗导电结构区域上的金属加强层时有可能对导电结构区域进行特别简单的保护。
按照权利要求5的实施例在精细导电结构区域有可能借助于激光射线将耐光层进行结构化。然后按照权利要求6在这种情况下可以用特别简单和所希望的结构将耐腐蚀层在一个工序中涂在粗导电结构和精细导电结构上。
按照权利要求7对具有精细导电结构区域进行保护时当涂上金属加强层时也可以用简单的方法通过临时的掩膜起作用,在这之后将临时的掩膜又可以容易地取下。
按照权利要求8扩展结构有可能在精细导电结构区域特别容易实现耐腐蚀层的直接激光结构化。
虽然原则上作为耐腐蚀层也可以使用有机的耐腐蚀层,如电泳漆,按照权利要求9最好使用化学的或者电沉积的耐腐蚀层。其中按照权利要求10使用锡或者锡-铅作为耐腐蚀层证明是合适的。
如果耐腐蚀层在印刷电路板的进一步处理时损坏,则按照权利要求11将其重新去除。然后在这种情况下可以将其他金属层涂在粗导电结构和精细导电结构上。
下面借助于附图详细叙述本发明的实施例。
附图表示
附图1表示了具有粗导电结构和精细导电结构区域的印刷电路板的非常简化的上视图,
附图2示出了制造具有粗导电结构和精细导电结构区域印刷电路板方法的第一种实施形式的各种处理步骤,
附图3示出了制造具有粗导电结构和精细导电结构区域印刷电路板方法的第二种实施形式的各种处理步骤,
附图4示出了制造具有粗导电结构和精细导电结构区域印刷电路板方法的第三个实施形式的各种处理步骤,
附图1非常简化地表示了整个用LP命名的印刷电路板的上视图,只用轮廓线表示的具有粗导电结构GL的区域和具有同时不能详细识别的具有边界区域B的精细导电结构FL位于其表面。四个校准标志JM位于区域B的交点上,在区域B内工作时校准标志有可能使各个仪器准确定位。
附图2表示了制造具有粗导电结构和具有精细导电结构区域的印刷电路板方法的第一种实施形式的各种处理步骤a至h。在单个截面上粗导电结构区域各自位于通过电绝缘基片S点线的左边,而精细导电结构区域位于点线的右边。
按照附图2a在基片S上涂上金属层MS,在具有粗导电结构区域和在具有精细导电结构区域钻出触点通孔DL。金属层MS例如涉及到一个铜涂层。
按照附图2b例如随后通过化学的和电的铜沉积在金属层MS和触点通孔DL壁上使其金属化ME。
随后按照附图2c涂上耐光层PR通过曝光和冲洗使之这样结构化,在粗导电结构区域具有这种粗导电结构的负图形和另外一方面负图形覆盖了整个精细导电结构区域。按照附图2d然后在没有被耐光层PR覆盖的金属化ME区域和特别是在触点通孔DL中例如通过电的铜沉积涂上加强层VS。加强层的任务是提高触点通孔的可靠性。
按照附图2e然后在精细导电结构区域将耐光层PR借助于激光射线LS这样结构化,耐光层具有精细导电结构的负图形。对于这种激光结构化例如使用具有光波长度为1.06μm或者355nm的Nd:YAG激光器。
随后按照附图2f在一个工序中将粗导电结构和精细导电结构涂上耐腐蚀层AR。在被表示的实施例中是通过锡的电沉积将耐腐蚀层AR涂上的。
在附图2g表示了将耐光层PR去除之后然后按照附图2h在一个共同的腐蚀过程中制成粗导电结构GL和精细导电结构FL。在这个共同的腐蚀过程中将没有用耐腐蚀层AR保护的金属化ME区域和金属层MS腐蚀到基片表面。然后在后面的步骤中将保留的耐腐蚀层AR剥离。
附图3表示了制造具有粗导电结构和精细导电结构区域印刷电路板方法的第二种实施形式的各种处理步骤a至h。附图3a和3b对应于已经叙述过的附图2a和2b。
按照附图3c在金属化层ME上涂上耐光层PR和通过曝光和冲洗这样结构化,耐光层在粗导电结构区域有这种粗导电结构的负图形。在精细导电结构区域将命名为TM的临时的掩膜安放在金属化层ME上。随后按照附图3d在粗导电结构区域在金属化层ME上涂上加强层VS。
在去掉临时的掩膜TM之后按照附图3e然后按照附图3f用一个工序在粗导电结构和精细导电结构区域涂上耐腐蚀层AR。在被表示的实施例中涂上耐腐蚀层AR是通过锡的化学沉积进行的。
按照附图3g随后将耐光层PR去除和在精细导电结构区域上的耐腐蚀层借助于激光射线LS这样结构化,耐光层有精细导电结构区域的图形。对于耐腐蚀层AR的激光结构化使用具有波长为1.06μm的Nd:YAG激光器。
按照附图3h然后在一个共同的腐蚀过程中制成粗导电结构GL和精细导电结构FL。在这个共同的腐蚀过程中将没有用耐腐蚀层AR保护的金属化ME区域和金属层MS腐蚀到基片表面。然后在后面的步骤中将保留的耐腐蚀层AR剥离。
附图4表示了制造具有粗导电结构和精细导电结构区域印刷电路板方法的第三种实施形式的各种处理步骤a至h。附图4a和4b对应于已经叙述过的附图2a和2b。
按照附图4c在金属化ME上涂上耐光层PR和通过曝光和冲洗这样结构化,耐光层在粗导电结构区域有这种粗导电结构的负图形。
随后按照附图4d将加强层VS涂在金属化ME上,此时加强层VS覆盖整个精细导电结构区域的整个面积。
按照附图4e然后将耐腐蚀层AR涂在加强层VS上。在被表示的实施例中涂上耐腐蚀层AR是通过锡的化学沉积进行的。
按照附图4f随后将在精细导电结构区域的耐腐蚀层AR借助于激光射线LS这样结构化,耐腐蚀层有精细导电结构的图形。对于耐腐蚀层AR的激光结构化使用具有波长为1.06μm的Nd:YAG激光器。
在激光结构化之后按照附图4g将耐光层PR去除。
按照附图4h然后在一个共同的腐蚀过程中制成粗导电结构GL和精细导电结构FL。将粗导电结构GL区域中没有用耐腐蚀层AR保护的金属化ME区域和金属层MS腐蚀到基片表面。将精细导电结构区域FL没有用耐腐蚀层AR保护的加强层VS区域、金属化ME区域和金属层MS区域腐蚀到基片表面。在共同的腐蚀过程之后将保留的耐腐蚀层AR剥离。
Claims (11)
1.具有粗导电结构(GL)和具有至少一个局限区域(B)的精细导电结构(FL)的印刷电路板的制造方法,具有以下步骤:
a)在电绝缘的基片(S)上涂上一个金属层(MS);
b)在粗导电结构区域(GL)借助于照相印刷术将结构化的耐腐蚀层(AR)涂在金属层(MS)上,耐腐蚀层有粗导电结构(GL)的图形;
c)在精细导电结构(FL)的区域(B)借助于激光射线(LS)将结构化的耐腐蚀层(AR)涂在金属层(MS)上,耐腐蚀层有精细导电结构(FL)的图形;
d)为了构成粗导电结构(GL)和构成精细导电结构(FL)在一个共同的腐蚀过程中将没有被耐腐蚀层(AR)保护的金属层(MS)的区域直到基片(S)的表面腐蚀掉。
2.按照权利要求1的方法,其特征为,在粗导电结构区域(GL)和/或在精细导电结构区域(FL)钻出穿透金属层(MS)和基片(S)的触点通孔(DL),并且然后在金属层(MS)和触点通孔(DL)的壁上进行金属化(ME)。
3.按照权利要求2的方法,其特征为,在金属化(ME)上至少在粗导电结构区域(GL)涂上耐光层(PR),并且通过曝光和冲洗这样结构化,耐光层有粗导电结构(GL)的负图形和然后将金属的加强层(VS)涂在金属化(ME)上。
4.按照权利要求3的方法,其特征为,也将耐光层(PR)涂在具有精细导电结构(FL)的区域(B)上和当涂金属的加强层(VS)时将精细导电结构区域覆盖。
5.按照权利要求4的方法,其特征为,耐光层(PR)在涂上金属加强层(VS)之后在具有精细导电结构(FL)的区域(B)上借助于激光射线(LS)这样结构化,耐光层有精细导电结构(LS)的负图形。
6.按照权利要求5的方法,其特征为,耐腐蚀层(AR)用一个工序涂在粗导电结构(GL)和精细导电结构(FL)上和然后将耐光层(PR)去除。
7.按照权利要求3的方法,其特征为,具有精细导电结构(FL)的区域(B)当涂上金属加强层(VS)时是用一个临时的掩膜(TM)覆盖的。
8.按照权利要求1至3之一或者7的方法,其特征为,在步骤c)中将耐腐蚀层(AR)涂在金属层(MS)整个面积上和借助于激光射线(LS)这样结构化,耐腐蚀层有精细导电结构(FL)的图形。
9.按照上述权利要求之一的方法,其特征为,将耐腐蚀层(AR)通过化学的或者电的金属沉积用一个工序涂在具有粗导电结构(GL)的区域和具有精细导电结构(FL)的区域(B)。
10.按照权利要求9的方法,其特征为,使用锡或者锡-铅作为耐腐蚀层(AR)。
11.按照上述权利要求之一的方法,其特征为,将耐腐蚀层(AR)在步骤d)之后又去除掉。
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US (1) | US6627091B1 (zh) |
EP (1) | EP1097616B1 (zh) |
JP (1) | JP2002521810A (zh) |
KR (1) | KR100384354B1 (zh) |
CN (1) | CN1307792A (zh) |
AT (1) | ATE250323T1 (zh) |
DE (1) | DE59907033D1 (zh) |
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Cited By (4)
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CN101808469B (zh) * | 2009-02-13 | 2012-03-14 | 统将(惠阳)电子有限公司 | 印制线路板的曝光方法 |
CN107846783A (zh) * | 2017-11-13 | 2018-03-27 | 上海安费诺永亿通讯电子有限公司 | 一种分布在绝缘体不同方位表面的金属线路制造方法 |
CN109600939A (zh) * | 2018-10-30 | 2019-04-09 | 庆鼎精密电子(淮安)有限公司 | 薄型天线电路板的制作方法 |
CN113857681A (zh) * | 2021-09-27 | 2021-12-31 | 深圳明阳芯蕊半导体有限公司 | 一种高密度载板的加工系统及加工方法 |
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DE10106399C1 (de) * | 2001-02-12 | 2002-09-05 | Siemens Ag | Verfahren zur Herstellung von Schaltungsträgern mit groben Leiterstrukturen und mindestens einem Bereich mit feinen Leiterstrukturen |
DE10125397B4 (de) | 2001-05-23 | 2005-03-03 | Siemens Ag | Verfahren zum Bohren von Mikrolöchern mit einem Laserstrahl |
DE10127357C1 (de) * | 2001-06-06 | 2002-09-26 | Siemens Dematic Ag | Verfahren und Einrichtung zur Strukturierung von Leiterplatten |
GB0400982D0 (en) * | 2004-01-16 | 2004-02-18 | Fujifilm Electronic Imaging | Method of forming a pattern on a substrate |
KR100969439B1 (ko) | 2008-05-07 | 2010-07-14 | 삼성전기주식회사 | 랜드리스 비아를 갖는 인쇄회로기판의 제조방법 |
KR101022887B1 (ko) | 2008-11-18 | 2011-03-16 | 삼성전기주식회사 | 랜드리스 비아를 갖는 인쇄회로기판의 제조방법 |
JP2013182989A (ja) * | 2012-03-01 | 2013-09-12 | Dowa Metaltech Kk | 金属−セラミックス接合回路基板の製造方法 |
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- 1999-07-01 KR KR10-2001-7000513A patent/KR100384354B1/ko not_active IP Right Cessation
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- 1999-07-01 JP JP2000560760A patent/JP2002521810A/ja not_active Ceased
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101808469B (zh) * | 2009-02-13 | 2012-03-14 | 统将(惠阳)电子有限公司 | 印制线路板的曝光方法 |
CN107846783A (zh) * | 2017-11-13 | 2018-03-27 | 上海安费诺永亿通讯电子有限公司 | 一种分布在绝缘体不同方位表面的金属线路制造方法 |
CN107846783B (zh) * | 2017-11-13 | 2020-05-12 | 上海安费诺永亿通讯电子有限公司 | 一种分布在绝缘体不同方位表面的金属线路制造方法 |
CN109600939A (zh) * | 2018-10-30 | 2019-04-09 | 庆鼎精密电子(淮安)有限公司 | 薄型天线电路板的制作方法 |
CN109600939B (zh) * | 2018-10-30 | 2019-09-20 | 庆鼎精密电子(淮安)有限公司 | 薄型天线电路板的制作方法 |
CN113857681A (zh) * | 2021-09-27 | 2021-12-31 | 深圳明阳芯蕊半导体有限公司 | 一种高密度载板的加工系统及加工方法 |
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ATE250323T1 (de) | 2003-10-15 |
KR100384354B1 (ko) | 2003-05-22 |
TW453139B (en) | 2001-09-01 |
JP2002521810A (ja) | 2002-07-16 |
US6627091B1 (en) | 2003-09-30 |
KR20010071871A (ko) | 2001-07-31 |
WO2000004750A1 (de) | 2000-01-27 |
DE59907033D1 (de) | 2003-10-23 |
EP1097616A1 (de) | 2001-05-09 |
EP1097616B1 (de) | 2003-09-17 |
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