CN1280915C - 沟槽肖特基整流器 - Google Patents

沟槽肖特基整流器 Download PDF

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Publication number
CN1280915C
CN1280915C CNB028111443A CN02811144A CN1280915C CN 1280915 C CN1280915 C CN 1280915C CN B028111443 A CNB028111443 A CN B028111443A CN 02811144 A CN02811144 A CN 02811144A CN 1280915 C CN1280915 C CN 1280915C
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CN
China
Prior art keywords
region
semiconductor region
schottky
semiconductor
trench
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Expired - Lifetime
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CNB028111443A
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English (en)
Chinese (zh)
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CN1520615A (zh
Inventor
石甫渊
苏根政
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General Semiconductor Inc
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General Semiconductor Inc
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Publication of CN1520615A publication Critical patent/CN1520615A/zh
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Publication of CN1280915C publication Critical patent/CN1280915C/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/051—Manufacture or treatment of Schottky diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H10D8/605—Schottky-barrier diodes  of the trench conductor-insulator-semiconductor barrier type, e.g. trench MOS barrier Schottky rectifiers [TMBS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/676—Combinations of only thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/86—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of Schottky-barrier gate FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers

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  • Electrodes Of Semiconductors (AREA)
CNB028111443A 2001-06-01 2002-05-31 沟槽肖特基整流器 Expired - Lifetime CN1280915C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/872,926 2001-06-01
US09/872,926 US6580141B2 (en) 2001-06-01 2001-06-01 Trench schottky rectifier

Publications (2)

Publication Number Publication Date
CN1520615A CN1520615A (zh) 2004-08-11
CN1280915C true CN1280915C (zh) 2006-10-18

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CNB028111443A Expired - Lifetime CN1280915C (zh) 2001-06-01 2002-05-31 沟槽肖特基整流器

Country Status (7)

Country Link
US (2) US6580141B2 (https=)
EP (1) EP1393379B1 (https=)
JP (1) JP4313190B2 (https=)
KR (1) KR100884077B1 (https=)
CN (1) CN1280915C (https=)
TW (1) TW548855B (https=)
WO (1) WO2002099889A1 (https=)

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US6707127B1 (en) * 2000-08-31 2004-03-16 General Semiconductor, Inc. Trench schottky rectifier
US7009247B2 (en) * 2001-07-03 2006-03-07 Siliconix Incorporated Trench MIS device with thick oxide layer in bottom of gate contact trench
US7291884B2 (en) * 2001-07-03 2007-11-06 Siliconix Incorporated Trench MIS device having implanted drain-drift region and thick bottom oxide
US7033876B2 (en) * 2001-07-03 2006-04-25 Siliconix Incorporated Trench MIS device having implanted drain-drift region and thick bottom oxide and process for manufacturing the same
US20060038223A1 (en) * 2001-07-03 2006-02-23 Siliconix Incorporated Trench MOSFET having drain-drift region comprising stack of implanted regions
US7323402B2 (en) * 2002-07-11 2008-01-29 International Rectifier Corporation Trench Schottky barrier diode with differential oxide thickness
US6833556B2 (en) 2002-08-12 2004-12-21 Acorn Technologies, Inc. Insulated gate field effect transistor having passivated schottky barriers to the channel
US7084423B2 (en) 2002-08-12 2006-08-01 Acorn Technologies, Inc. Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
JP4538211B2 (ja) * 2003-10-08 2010-09-08 トヨタ自動車株式会社 絶縁ゲート型半導体装置およびその製造方法
US7439555B2 (en) 2003-12-05 2008-10-21 International Rectifier Corporation III-nitride semiconductor device with trench structure
US7098521B2 (en) * 2004-10-01 2006-08-29 International Business Machines Corporation Reduced guard ring in schottky barrier diode structure
DE102004056663A1 (de) * 2004-11-24 2006-06-01 Robert Bosch Gmbh Halbleitereinrichtung und Gleichrichteranordnung
EP1681725A1 (fr) * 2005-01-18 2006-07-19 St Microelectronics S.A. Composant unipolaire vertical à faible courant de fuite
US8039328B2 (en) * 2005-10-18 2011-10-18 International Rectifier Corporation Trench Schottky device with single barrier
EP1983940B1 (en) 2006-01-20 2014-03-05 Zimmer Technology, Inc. Shoulder arthroplasty system
US20090053864A1 (en) * 2007-08-23 2009-02-26 Jinping Liu Method for fabricating a semiconductor structure having heterogeneous crystalline orientations
US7741693B1 (en) 2007-11-16 2010-06-22 National Semiconductor Corporation Method for integrating trench MOS Schottky barrier devices into integrated circuits and related semiconductor devices
US20090309181A1 (en) * 2008-06-12 2009-12-17 Force Mos Technology Co. Ltd. Trench schottky with multiple epi structure
US7750412B2 (en) * 2008-08-06 2010-07-06 Fairchild Semiconductor Corporation Rectifier with PN clamp regions under trenches
TWI455209B (zh) 2009-10-12 2014-10-01 節能元件股份有限公司 溝渠式金氧半ｐ－ｎ接面蕭基二極體結構及其製作方法
CN101800252B (zh) * 2010-03-04 2012-05-30 无锡新洁能功率半导体有限公司 沟槽型肖特基势垒整流器及其制造方法
CN101853850B (zh) * 2010-03-17 2011-10-26 无锡新洁能功率半导体有限公司 一种超势垒半导体整流器件及其制造方法
DE102010028203A1 (de) * 2010-04-26 2011-10-27 Robert Bosch Gmbh Gleichrichter-Brückenschaltung
BR112013017505A2 (pt) * 2011-01-07 2016-09-27 Infineon Technologies Austria arranjo de dispositivo semicondutor com um primeiro dispositivo semicondutor e com uma pluralidade de segundos dispositivos semicondutores
JP2013030618A (ja) 2011-07-28 2013-02-07 Rohm Co Ltd 半導体装置
US9059329B2 (en) * 2011-08-22 2015-06-16 Monolithic Power Systems, Inc. Power device with integrated Schottky diode and method for making the same
KR101990622B1 (ko) 2011-11-23 2019-06-18 아콘 테크놀로지스 인코포레이티드 계면 원자 단일층의 삽입에 의한 ⅳ족 반도체에 대한 금속 접점의 개선
CN102916055B (zh) * 2012-10-11 2014-12-24 杭州立昂微电子股份有限公司 一种沟槽肖特基势垒二极管及其制造方法
CN103035751A (zh) * 2012-11-23 2013-04-10 上海华虹Nec电子有限公司 肖特基二极管
JP5922014B2 (ja) * 2012-12-27 2016-05-24 新電元工業株式会社 トレンチショットキバリアダイオード及びその製造方法
CN104183485B (zh) * 2013-05-23 2017-11-10 上海宝芯源功率半导体有限公司 一种超级势垒整流器结构及其制作方法
TWI514578B (zh) * 2013-06-21 2015-12-21 Chip Integration Tech Co Ltd 雙溝渠式整流器及其製造方法
US20150017774A1 (en) * 2013-07-10 2015-01-15 Globalfoundries Inc. Method of forming fins with recess shapes
US9620611B1 (en) 2016-06-17 2017-04-11 Acorn Technology, Inc. MIS contact structure with metal oxide conductor
WO2018094205A1 (en) 2016-11-18 2018-05-24 Acorn Technologies, Inc. Nanowire transistor with source and drain induced by electrical contacts with negative schottky barrier height
JP2017063237A (ja) * 2017-01-13 2017-03-30 ローム株式会社 半導体装置
CN107256886A (zh) * 2017-07-12 2017-10-17 付妮娜 沟槽式肖特基二极管及其制作方法
WO2019155768A1 (ja) * 2018-02-09 2019-08-15 三菱電機株式会社 電力用半導体装置

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* Cited by examiner, † Cited by third party
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JPS4822390B1 (https=) * 1969-03-18 1973-07-05
JPS5294773A (en) * 1976-02-05 1977-08-09 Sumitomo Electric Ind Ltd Semiconductor element and its manufacture
US4835580A (en) * 1987-04-30 1989-05-30 Texas Instruments Incorporated Schottky barrier diode and method
US5365102A (en) * 1993-07-06 1994-11-15 North Carolina State University Schottky barrier rectifier with MOS trench
US6078090A (en) * 1997-04-02 2000-06-20 Siliconix Incorporated Trench-gated Schottky diode with integral clamping diode
US5612567A (en) * 1996-05-13 1997-03-18 North Carolina State University Schottky barrier rectifiers and methods of forming same
US5883422A (en) * 1996-06-28 1999-03-16 The Whitaker Corporation Reduced parasitic capacitance semiconductor devices
JP3502531B2 (ja) * 1997-08-28 2004-03-02 株式会社ルネサステクノロジ 半導体装置の製造方法
US6184563B1 (en) * 1998-07-27 2001-02-06 Ho-Yuan Yu Device structure for providing improved Schottky barrier rectifier
US6252258B1 (en) * 1999-08-10 2001-06-26 Rockwell Science Center Llc High power rectifier
JP2001085686A (ja) * 1999-09-13 2001-03-30 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP2001094094A (ja) * 1999-09-21 2001-04-06 Hitachi Ltd 半導体装置およびその製造方法

Also Published As

Publication number Publication date
WO2002099889A9 (en) 2004-04-08
US20020179993A1 (en) 2002-12-05
US6580141B2 (en) 2003-06-17
KR20040005998A (ko) 2004-01-16
JP2004529506A (ja) 2004-09-24
EP1393379A1 (en) 2004-03-03
WO2002099889A1 (en) 2002-12-12
KR100884077B1 (ko) 2009-02-19
CN1520615A (zh) 2004-08-11
EP1393379B1 (en) 2011-12-21
JP4313190B2 (ja) 2009-08-12
US20030193074A1 (en) 2003-10-16
US6770548B2 (en) 2004-08-03
TW548855B (en) 2003-08-21
EP1393379A4 (en) 2009-08-12

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