CN1280187C - 制备纳米碳的方法、纳米碳、含其的材料及制备设备 - Google Patents
制备纳米碳的方法、纳米碳、含其的材料及制备设备 Download PDFInfo
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- CN1280187C CN1280187C CNB021183554A CN02118355A CN1280187C CN 1280187 C CN1280187 C CN 1280187C CN B021183554 A CNB021183554 A CN B021183554A CN 02118355 A CN02118355 A CN 02118355A CN 1280187 C CN1280187 C CN 1280187C
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Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J19/087—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
- B01J19/088—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/05—Preparation or purification of carbon not covered by groups C01B32/15, C01B32/20, C01B32/25, C01B32/30
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/152—Fullerenes
- C01B32/154—Preparation
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/16—Preparation
- C01B32/162—Preparation characterised by catalysts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32055—Arc discharge
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J2219/0803—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
- B01J2219/0805—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges
- B01J2219/0807—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges involving electrodes
- B01J2219/0816—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges involving electrodes involving moving electrodes
- B01J2219/082—Sliding electrodes
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30446—Field emission cathodes characterised by the emitter material
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- H01J2209/00—Apparatus and processes for manufacture of discharge tubes
- H01J2209/02—Manufacture of cathodes
- H01J2209/022—Cold cathodes
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- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/47—Generating plasma using corona discharges
- H05H1/471—Pointed electrodes
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- H05H2245/50—Production of nanostructures
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10S977/00—Nanotechnology
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- Y10S977/844—Growth by vaporization or dissociation of carbon source using a high-energy heat source, e.g. electric arc, laser, plasma, e-beam
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- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
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| JP3842159B2 (ja) * | 2002-03-26 | 2006-11-08 | 株式会社半導体エネルギー研究所 | ドーピング装置 |
| JP4338355B2 (ja) * | 2002-05-10 | 2009-10-07 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US20040134631A1 (en) * | 2003-01-15 | 2004-07-15 | Crooks Evon Llewellyn | Smoking article wrapping materials comprising ultrafine particles |
| JP3997930B2 (ja) | 2003-02-27 | 2007-10-24 | 富士ゼロックス株式会社 | カーボンナノチューブの製造装置および製造方法 |
| US20040173229A1 (en) * | 2003-03-05 | 2004-09-09 | Crooks Evon Llewellyn | Smoking article comprising ultrafine particles |
| JP4394383B2 (ja) * | 2003-06-18 | 2010-01-06 | 独立行政法人科学技術振興機構 | 単層カーボンナノホーン吸着材およびその製造方法 |
| US7125308B2 (en) * | 2003-12-18 | 2006-10-24 | Nano-Proprietary, Inc. | Bead blast activation of carbon nanotube cathode |
| JP4863329B2 (ja) * | 2004-01-26 | 2012-01-25 | 双葉電子工業株式会社 | 蛍光表示管 |
| US20080031795A1 (en) * | 2004-03-26 | 2008-02-07 | Luna Innovations Incorporated | Method of Making Multiple Carbonaceous Nanomaterials |
| KR101102441B1 (ko) * | 2004-04-16 | 2012-01-05 | 학교법인 동의학원 | 산화 인듐이 부착된 카본을 제조하는 방법 |
| JP4652860B2 (ja) * | 2004-04-27 | 2011-03-16 | 大陽日酸株式会社 | クリプトン又はキセノンの回収方法 |
| US20050274390A1 (en) * | 2004-06-15 | 2005-12-15 | Banerjee Chandra K | Ultra-fine particle catalysts for carbonaceous fuel elements |
| KR101046976B1 (ko) * | 2004-10-19 | 2011-07-07 | 삼성에스디아이 주식회사 | 전자 방출원 형성용 조성물, 이를 이용한 전자 방출원제조 방법 및 전자 방출원 |
| WO2006051989A1 (ja) * | 2004-11-15 | 2006-05-18 | Ideal Star Inc. | アルカリ金属内包フラーレン類の分離剤、フラーレン類からのアルカリ金属とその化合物の除去方法、アルカリ金属内包フラーレン類の精製方法及び製造方法並びにそれらのシステム |
| KR100712416B1 (ko) * | 2004-12-13 | 2007-04-27 | 광주과학기술원 | 오스뮴 클러스터로 작용화된 탄소나노튜브 및 그 제조방법 |
| JP4680612B2 (ja) * | 2005-01-24 | 2011-05-11 | 株式会社不二越 | カーボンオニオンの製造方法 |
| JP4696598B2 (ja) * | 2005-03-04 | 2011-06-08 | Jfeエンジニアリング株式会社 | カーボンナノチューブ |
| JP4693463B2 (ja) * | 2005-04-05 | 2011-06-01 | 本荘ケミカル株式会社 | 二層カーボンナノチューブを製造するための触媒とこれを用いる二層カーボンナノチューブの製造方法 |
| US7444934B2 (en) * | 2005-05-24 | 2008-11-04 | Micron Technology, Inc. | Supercritical fluid-assisted direct write for printing integrated circuits |
| JP2007048907A (ja) * | 2005-08-09 | 2007-02-22 | National Institute For Materials Science | 電気二重層キャパシタ用電極およびこれを用いたキャパシタ |
| US9220301B2 (en) | 2006-03-16 | 2015-12-29 | R.J. Reynolds Tobacco Company | Smoking article |
| KR100777113B1 (ko) * | 2006-12-07 | 2007-11-19 | 한국전자통신연구원 | 미세패터닝이 가능한 고 신뢰성의 cnt 에미터 제조 방법 |
| TWI332427B (en) * | 2007-11-21 | 2010-11-01 | Univ Nat Taiwan Ocean | Welding method for sc-zirconium based bulk metallic glass |
| US8262942B2 (en) * | 2008-02-07 | 2012-09-11 | The George Washington University | Hollow carbon nanosphere based secondary cell electrodes |
| KR101054963B1 (ko) * | 2008-09-23 | 2011-08-05 | 현대하이스코 주식회사 | 금형 코팅 방법 및 이를 위한 이동식 코팅 장치 |
| TWI407805B (zh) * | 2009-01-16 | 2013-09-01 | 北京富納特創新科技有限公司 | 熱致發聲裝置之製備方法 |
| DE102009048397A1 (de) * | 2009-10-06 | 2011-04-07 | Plasmatreat Gmbh | Atmosphärendruckplasmaverfahren zur Herstellung oberflächenmodifizierter Partikel und von Beschichtungen |
| US8945789B2 (en) * | 2011-03-18 | 2015-02-03 | Ngk Insulators, Ltd. | Solid oxide fuel cell |
| KR20140038411A (ko) | 2011-04-15 | 2014-03-28 | 가부시키가이샤 간쿄우 에네루기 나노 기쥬츠 겡큐쇼 | 카본 나노 재료 제조 장치 및 그 이용 |
| JP5242840B1 (ja) * | 2011-10-14 | 2013-07-24 | 日本碍子株式会社 | 燃料電池セル |
| JP2013228378A (ja) * | 2012-03-28 | 2013-11-07 | Nippon Soken Inc | カーボンスーツ発生装置 |
| US9839896B2 (en) * | 2012-06-12 | 2017-12-12 | The George Washington University | System and method for mass production of graphene platelets in arc plasma |
| US9021985B2 (en) | 2012-09-12 | 2015-05-05 | Asm Ip Holdings B.V. | Process gas management for an inductively-coupled plasma deposition reactor |
| JP6449610B2 (ja) * | 2013-10-07 | 2019-01-09 | 株式会社Soken | カーボンスーツ発生装置およびカーボンスーツ発生方法 |
| CN104129775B (zh) * | 2014-07-16 | 2015-12-30 | 苏州大学 | 一种内嵌钪氧化物团簇富勒烯的制备方法 |
| US10553390B2 (en) * | 2016-07-19 | 2020-02-04 | Denka Company Limited | Electron source and production method therefor |
| US10813257B2 (en) * | 2016-09-05 | 2020-10-20 | Nec Corporation | Electromagnetic wave absorbing material |
| US10584072B2 (en) * | 2017-05-17 | 2020-03-10 | Eden Innovations Ltd. | Methods and systems for making nanocarbon particle admixtures and concrete |
| KR102456578B1 (ko) | 2017-07-14 | 2022-10-20 | 삼성전자주식회사 | 하드마스크 조성물과 그 제조방법 및 하드마스크 조성물을 이용한 패턴층의 형성방법 |
| CN110203904B (zh) * | 2019-06-06 | 2021-07-09 | 东北大学 | 用于制备纳米结构碳材料的前体材料及方法 |
| US11999654B2 (en) | 2019-08-22 | 2024-06-04 | Eden Innovations Ltd. | Method for making concrete admixtures containing carbon nanoparticles |
| CN115832164B (zh) * | 2021-07-27 | 2025-05-30 | 清华大学 | 锂离子电池电极的制备方法及制备装置 |
| CN118343745B (zh) * | 2024-05-14 | 2025-10-28 | 江西铜业技术研究院有限公司 | 一种直流电弧放电制备单/双壁碳纳米管的方法和系统 |
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| JP2541434B2 (ja) * | 1992-11-20 | 1996-10-09 | 日本電気株式会社 | カ―ボンナノチュ―ブの製造方法 |
| JP2699852B2 (ja) * | 1993-12-28 | 1998-01-19 | 日本電気株式会社 | 単層カーボンナノチューブの製造法 |
| TW353758B (en) * | 1996-09-30 | 1999-03-01 | Motorola Inc | Electron emissive film and method |
| JP3017161B2 (ja) * | 1998-03-16 | 2000-03-06 | 双葉電子工業株式会社 | 単層カーボンナノチューブの製造方法 |
| JP2000277003A (ja) * | 1999-03-23 | 2000-10-06 | Futaba Corp | 電子放出源の製造方法及び電子放出源 |
| KR100335382B1 (ko) * | 2000-05-23 | 2002-05-06 | 최규술 | 회전 전극 플라즈마 장치, 및 이를 이용한 탄소 나노체합성 방법 |
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| JP3825336B2 (ja) | 2006-09-27 |
| KR100664347B1 (ko) | 2007-01-02 |
| TW594931B (en) | 2004-06-21 |
| JP2002348108A (ja) | 2002-12-04 |
| CN1375451A (zh) | 2002-10-23 |
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