KR100664347B1 - 나노카본의 제조방법 및 그 방법을 이용하여 제조된나노카본 및 나노카본과 금속미립자를 포함하는 복합재료또는 혼합재료, 나노카본의 제조장치, 나노카본의 패턴화방법 및 그 방법을 이용하여 패턴화된 나노카본기재 및 그패턴화된 나노카본기재를 이용한 전자방출원 - Google Patents

나노카본의 제조방법 및 그 방법을 이용하여 제조된나노카본 및 나노카본과 금속미립자를 포함하는 복합재료또는 혼합재료, 나노카본의 제조장치, 나노카본의 패턴화방법 및 그 방법을 이용하여 패턴화된 나노카본기재 및 그패턴화된 나노카본기재를 이용한 전자방출원 Download PDF

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KR100664347B1
KR100664347B1 KR1020020012949A KR20020012949A KR100664347B1 KR 100664347 B1 KR100664347 B1 KR 100664347B1 KR 1020020012949 A KR1020020012949 A KR 1020020012949A KR 20020012949 A KR20020012949 A KR 20020012949A KR 100664347 B1 KR100664347 B1 KR 100664347B1
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nanocarbon
electrode
soot
arc discharge
substrate
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KR20020072798A (ko
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다키카와히로후미
히비요시히코
이토시게오
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후다바 덴시 고교 가부시키가이샤
다키카와 히로후미
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
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    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
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    • B01J19/088—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges
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    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
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    • B01J2219/0894—Processes carried out in the presence of a plasma
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    • C01B2202/00—Structure or properties of carbon nanotubes
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
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    • H01J2201/30446—Field emission cathodes characterised by the emitter material
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    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
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  • Electrodes For Cathode-Ray Tubes (AREA)
  • Cold Cathode And The Manufacture (AREA)
KR1020020012949A 2001-03-12 2002-03-11 나노카본의 제조방법 및 그 방법을 이용하여 제조된나노카본 및 나노카본과 금속미립자를 포함하는 복합재료또는 혼합재료, 나노카본의 제조장치, 나노카본의 패턴화방법 및 그 방법을 이용하여 패턴화된 나노카본기재 및 그패턴화된 나노카본기재를 이용한 전자방출원 Expired - Fee Related KR100664347B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2001068413 2001-03-12
JPJP-P-2001-00068413 2001-03-12
JPJP-P-2002-00044554 2002-02-21
JP2002044554A JP3825336B2 (ja) 2001-03-12 2002-02-21 ナノカーボンの製造方法及びナノカーボンの製造装置

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KR20020072798A KR20020072798A (ko) 2002-09-18
KR100664347B1 true KR100664347B1 (ko) 2007-01-02

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US (1) US6827823B2 (enExample)
JP (1) JP3825336B2 (enExample)
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10777412B2 (en) 2017-07-14 2020-09-15 Samsung Electronics Co., Ltd. Hardmask composition, method of preparing the same, and method of forming patterned layer by using the hardmask composition

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3842159B2 (ja) * 2002-03-26 2006-11-08 株式会社半導体エネルギー研究所 ドーピング装置
JP4338355B2 (ja) * 2002-05-10 2009-10-07 東京エレクトロン株式会社 プラズマ処理装置
US20040134631A1 (en) * 2003-01-15 2004-07-15 Crooks Evon Llewellyn Smoking article wrapping materials comprising ultrafine particles
JP3997930B2 (ja) 2003-02-27 2007-10-24 富士ゼロックス株式会社 カーボンナノチューブの製造装置および製造方法
US20040173229A1 (en) * 2003-03-05 2004-09-09 Crooks Evon Llewellyn Smoking article comprising ultrafine particles
JP4394383B2 (ja) * 2003-06-18 2010-01-06 独立行政法人科学技術振興機構 単層カーボンナノホーン吸着材およびその製造方法
US7125308B2 (en) * 2003-12-18 2006-10-24 Nano-Proprietary, Inc. Bead blast activation of carbon nanotube cathode
JP4863329B2 (ja) * 2004-01-26 2012-01-25 双葉電子工業株式会社 蛍光表示管
US20080031795A1 (en) * 2004-03-26 2008-02-07 Luna Innovations Incorporated Method of Making Multiple Carbonaceous Nanomaterials
KR101102441B1 (ko) * 2004-04-16 2012-01-05 학교법인 동의학원 산화 인듐이 부착된 카본을 제조하는 방법
JP4652860B2 (ja) * 2004-04-27 2011-03-16 大陽日酸株式会社 クリプトン又はキセノンの回収方法
US20050274390A1 (en) * 2004-06-15 2005-12-15 Banerjee Chandra K Ultra-fine particle catalysts for carbonaceous fuel elements
KR101046976B1 (ko) * 2004-10-19 2011-07-07 삼성에스디아이 주식회사 전자 방출원 형성용 조성물, 이를 이용한 전자 방출원제조 방법 및 전자 방출원
WO2006051989A1 (ja) * 2004-11-15 2006-05-18 Ideal Star Inc. アルカリ金属内包フラーレン類の分離剤、フラーレン類からのアルカリ金属とその化合物の除去方法、アルカリ金属内包フラーレン類の精製方法及び製造方法並びにそれらのシステム
KR100712416B1 (ko) * 2004-12-13 2007-04-27 광주과학기술원 오스뮴 클러스터로 작용화된 탄소나노튜브 및 그 제조방법
JP4680612B2 (ja) * 2005-01-24 2011-05-11 株式会社不二越 カーボンオニオンの製造方法
JP4696598B2 (ja) * 2005-03-04 2011-06-08 Ｊｆｅエンジニアリング株式会社 カーボンナノチューブ
JP4693463B2 (ja) * 2005-04-05 2011-06-01 本荘ケミカル株式会社 二層カーボンナノチューブを製造するための触媒とこれを用いる二層カーボンナノチューブの製造方法
US7444934B2 (en) * 2005-05-24 2008-11-04 Micron Technology, Inc. Supercritical fluid-assisted direct write for printing integrated circuits
JP2007048907A (ja) * 2005-08-09 2007-02-22 National Institute For Materials Science 電気二重層キャパシタ用電極およびこれを用いたキャパシタ
US9220301B2 (en) 2006-03-16 2015-12-29 R.J. Reynolds Tobacco Company Smoking article
KR100777113B1 (ko) * 2006-12-07 2007-11-19 한국전자통신연구원 미세패터닝이 가능한 고 신뢰성의 ｃｎｔ 에미터 제조 방법
TWI332427B (en) * 2007-11-21 2010-11-01 Univ Nat Taiwan Ocean Welding method for sc-zirconium based bulk metallic glass
US8262942B2 (en) * 2008-02-07 2012-09-11 The George Washington University Hollow carbon nanosphere based secondary cell electrodes
KR101054963B1 (ko) * 2008-09-23 2011-08-05 현대하이스코 주식회사 금형 코팅 방법 및 이를 위한 이동식 코팅 장치
TWI407805B (zh) * 2009-01-16 2013-09-01 北京富納特創新科技有限公司 熱致發聲裝置之製備方法
DE102009048397A1 (de) * 2009-10-06 2011-04-07 Plasmatreat Gmbh Atmosphärendruckplasmaverfahren zur Herstellung oberflächenmodifizierter Partikel und von Beschichtungen
US8945789B2 (en) * 2011-03-18 2015-02-03 Ngk Insulators, Ltd. Solid oxide fuel cell
KR20140038411A (ko) 2011-04-15 2014-03-28 가부시키가이샤 간쿄우 에네루기 나노 기쥬츠 겡큐쇼 카본 나노 재료 제조 장치 및 그 이용
JP5242840B1 (ja) * 2011-10-14 2013-07-24 日本碍子株式会社 燃料電池セル
JP2013228378A (ja) * 2012-03-28 2013-11-07 Nippon Soken Inc カーボンスーツ発生装置
US9839896B2 (en) * 2012-06-12 2017-12-12 The George Washington University System and method for mass production of graphene platelets in arc plasma
US9021985B2 (en) 2012-09-12 2015-05-05 Asm Ip Holdings B.V. Process gas management for an inductively-coupled plasma deposition reactor
JP6449610B2 (ja) * 2013-10-07 2019-01-09 株式会社Ｓｏｋｅｎ カーボンスーツ発生装置およびカーボンスーツ発生方法
CN104129775B (zh) * 2014-07-16 2015-12-30 苏州大学 一种内嵌钪氧化物团簇富勒烯的制备方法
US10553390B2 (en) * 2016-07-19 2020-02-04 Denka Company Limited Electron source and production method therefor
US10813257B2 (en) * 2016-09-05 2020-10-20 Nec Corporation Electromagnetic wave absorbing material
US10584072B2 (en) * 2017-05-17 2020-03-10 Eden Innovations Ltd. Methods and systems for making nanocarbon particle admixtures and concrete
CN110203904B (zh) * 2019-06-06 2021-07-09 东北大学 用于制备纳米结构碳材料的前体材料及方法
US11999654B2 (en) 2019-08-22 2024-06-04 Eden Innovations Ltd. Method for making concrete admixtures containing carbon nanoparticles
CN115832164B (zh) * 2021-07-27 2025-05-30 清华大学 锂离子电池电极的制备方法及制备装置
CN118343745B (zh) * 2024-05-14 2025-10-28 江西铜业技术研究院有限公司 一种直流电弧放电制备单/双壁碳纳米管的方法和系统

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06157016A (ja) * 1992-11-20 1994-06-03 Nec Corp カーボンナノチューブの製造方法
JPH07197325A (ja) * 1993-12-28 1995-08-01 Nec Corp 単層カーボンナノチューブの製造法
EP0838831A2 (en) * 1996-09-30 1998-04-29 Motorola Inc. Electron emissive film and method
KR19990077943A (ko) * 1998-03-16 1999-10-25 니시무로 아츠시 단층카본나노튜브의제조방법
JP2000277003A (ja) * 1999-03-23 2000-10-06 Futaba Corp 電子放出源の製造方法及び電子放出源
KR20010106788A (ko) * 2000-05-23 2001-12-07 백홍구 회전 전극 플라즈마 장치, 및 이를 이용한 탄소 나노체합성 방법

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06157016A (ja) * 1992-11-20 1994-06-03 Nec Corp カーボンナノチューブの製造方法
JPH07197325A (ja) * 1993-12-28 1995-08-01 Nec Corp 単層カーボンナノチューブの製造法
EP0838831A2 (en) * 1996-09-30 1998-04-29 Motorola Inc. Electron emissive film and method
KR19990077943A (ko) * 1998-03-16 1999-10-25 니시무로 아츠시 단층카본나노튜브의제조방법
JP2000277003A (ja) * 1999-03-23 2000-10-06 Futaba Corp 電子放出源の製造方法及び電子放出源
KR20010106788A (ko) * 2000-05-23 2001-12-07 백홍구 회전 전극 플라즈마 장치, 및 이를 이용한 탄소 나노체합성 방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10777412B2 (en) 2017-07-14 2020-09-15 Samsung Electronics Co., Ltd. Hardmask composition, method of preparing the same, and method of forming patterned layer by using the hardmask composition

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