CN1280182C - 烧结的多晶氮化镓 - Google Patents

烧结的多晶氮化镓 Download PDF

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Publication number
CN1280182C
CN1280182C CNB028218302A CN02821830A CN1280182C CN 1280182 C CN1280182 C CN 1280182C CN B028218302 A CNB028218302 A CN B028218302A CN 02821830 A CN02821830 A CN 02821830A CN 1280182 C CN1280182 C CN 1280182C
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China
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gan
container
sintered polycrystalline
pressure
smooth surface
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Expired - Fee Related
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CNB028218302A
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English (en)
Chinese (zh)
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CN1582256A (zh
Inventor
马克·P·德伊夫林
戴维·C·彭德
休尔什·S·瓦高拉里
朴东实
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Slt Technology Co
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General Electric Co
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
    • B01J3/062—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies characterised by the composition of the materials to be processed
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G15/00—Compounds of gallium, indium or thallium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/065—Composition of the material produced
    • B01J2203/0665—Gallium nitrides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/0675—Structural or physico-chemical features of the materials processed
    • B01J2203/0685—Crystal sintering

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Ceramic Products (AREA)
CNB028218302A 2001-11-02 2002-10-30 烧结的多晶氮化镓 Expired - Fee Related CN1280182C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/001,575 2001-11-02
US10/001,575 US6861130B2 (en) 2001-11-02 2001-11-02 Sintered polycrystalline gallium nitride and its production

Publications (2)

Publication Number Publication Date
CN1582256A CN1582256A (zh) 2005-02-16
CN1280182C true CN1280182C (zh) 2006-10-18

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CNB028218302A Expired - Fee Related CN1280182C (zh) 2001-11-02 2002-10-30 烧结的多晶氮化镓

Country Status (9)

Country Link
US (1) US6861130B2 (enExample)
EP (1) EP1444165A2 (enExample)
JP (1) JP4349907B2 (enExample)
KR (1) KR100903251B1 (enExample)
CN (1) CN1280182C (enExample)
AU (1) AU2002363469A1 (enExample)
PL (1) PL368506A1 (enExample)
WO (1) WO2003041138A2 (enExample)
ZA (1) ZA200403783B (enExample)

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US7942970B2 (en) * 2005-12-20 2011-05-17 Momentive Performance Materials Inc. Apparatus for making crystalline composition
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US8039412B2 (en) * 2005-12-20 2011-10-18 Momentive Performance Materials Inc. Crystalline composition, device, and associated method
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US8303710B2 (en) * 2008-06-18 2012-11-06 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
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US9404197B2 (en) 2008-07-07 2016-08-02 Soraa, Inc. Large area, low-defect gallium-containing nitride crystals, method of making, and method of use
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US8354679B1 (en) 2008-10-02 2013-01-15 Soraa, Inc. Microcavity light emitting diode method of manufacture
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US8455894B1 (en) 2008-10-17 2013-06-04 Soraa, Inc. Photonic-crystal light emitting diode and method of manufacture
US9589792B2 (en) 2012-11-26 2017-03-07 Soraa, Inc. High quality group-III metal nitride crystals, methods of making, and methods of use
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US8878230B2 (en) * 2010-03-11 2014-11-04 Soraa, Inc. Semi-insulating group III metal nitride and method of manufacture
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US4146379A (en) * 1977-08-24 1979-03-27 University Of Southern California Process for densifying polycrystalline articles
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US6096282A (en) 1996-09-10 2000-08-01 The Regents Of The University Of California Instantaneous synthesis of refractory nitrides from solid precursors
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US6177057B1 (en) * 1999-02-09 2001-01-23 The United States Of America As Represented By The Secretary Of The Navy Process for preparing bulk cubic gallium nitride
US6113985A (en) 1999-04-27 2000-09-05 The United States Of America As Represented By Secretary Of The Air Force Process for the manufacture of group III nitride targets for use in sputtering and similar equipment

Also Published As

Publication number Publication date
PL368506A1 (en) 2005-04-04
KR20040053234A (ko) 2004-06-23
JP2005508822A (ja) 2005-04-07
JP4349907B2 (ja) 2009-10-21
ZA200403783B (en) 2005-11-21
WO2003041138A3 (en) 2004-02-19
AU2002363469A1 (en) 2003-05-19
WO2003041138A2 (en) 2003-05-15
US6861130B2 (en) 2005-03-01
CN1582256A (zh) 2005-02-16
KR100903251B1 (ko) 2009-06-17
EP1444165A2 (en) 2004-08-11
US20030086856A1 (en) 2003-05-08

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