JP4349907B2 - 焼結多結晶窒化ガリウム及びその製造方法 - Google Patents

焼結多結晶窒化ガリウム及びその製造方法 Download PDF

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Publication number
JP4349907B2
JP4349907B2 JP2003543080A JP2003543080A JP4349907B2 JP 4349907 B2 JP4349907 B2 JP 4349907B2 JP 2003543080 A JP2003543080 A JP 2003543080A JP 2003543080 A JP2003543080 A JP 2003543080A JP 4349907 B2 JP4349907 B2 JP 4349907B2
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gan
polycrystalline
pressure
gallium nitride
polycrystalline gan
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Japanese (ja)
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JP2005508822A (ja
JP2005508822A5 (enExample
Inventor
デヴリン，マーク・ピー
ペンダー，デビッド・シー
バガラリー，スレッシュ・エス
パーク，ドン−シル
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モーメンティブ・パフォーマンス・マテリアルズ・インク
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
    • B01J3/062—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies characterised by the composition of the materials to be processed
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G15/00—Compounds of gallium, indium or thallium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/065—Composition of the material produced
    • B01J2203/0665—Gallium nitrides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/0675—Structural or physico-chemical features of the materials processed
    • B01J2203/0685—Crystal sintering

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Ceramic Products (AREA)
JP2003543080A 2001-11-02 2002-10-30 焼結多結晶窒化ガリウム及びその製造方法 Expired - Fee Related JP4349907B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/001,575 US6861130B2 (en) 2001-11-02 2001-11-02 Sintered polycrystalline gallium nitride and its production
PCT/US2002/034792 WO2003041138A2 (en) 2001-11-02 2002-10-30 Sintered polycrystalline gallium nitride

Publications (3)

Publication Number Publication Date
JP2005508822A JP2005508822A (ja) 2005-04-07
JP2005508822A5 JP2005508822A5 (enExample) 2006-01-05
JP4349907B2 true JP4349907B2 (ja) 2009-10-21

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JP2003543080A Expired - Fee Related JP4349907B2 (ja) 2001-11-02 2002-10-30 焼結多結晶窒化ガリウム及びその製造方法

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Country Link
US (1) US6861130B2 (enExample)
EP (1) EP1444165A2 (enExample)
JP (1) JP4349907B2 (enExample)
KR (1) KR100903251B1 (enExample)
CN (1) CN1280182C (enExample)
AU (1) AU2002363469A1 (enExample)
PL (1) PL368506A1 (enExample)
WO (1) WO2003041138A2 (enExample)
ZA (1) ZA200403783B (enExample)

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US7942970B2 (en) * 2005-12-20 2011-05-17 Momentive Performance Materials Inc. Apparatus for making crystalline composition
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Also Published As

Publication number Publication date
PL368506A1 (en) 2005-04-04
KR20040053234A (ko) 2004-06-23
JP2005508822A (ja) 2005-04-07
ZA200403783B (en) 2005-11-21
WO2003041138A3 (en) 2004-02-19
CN1280182C (zh) 2006-10-18
AU2002363469A1 (en) 2003-05-19
WO2003041138A2 (en) 2003-05-15
US6861130B2 (en) 2005-03-01
CN1582256A (zh) 2005-02-16
KR100903251B1 (ko) 2009-06-17
EP1444165A2 (en) 2004-08-11
US20030086856A1 (en) 2003-05-08

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