JP2005508822A5 - - Google Patents

Download PDF

Info

Publication number
JP2005508822A5
JP2005508822A5 JP2003543080A JP2003543080A JP2005508822A5 JP 2005508822 A5 JP2005508822 A5 JP 2005508822A5 JP 2003543080 A JP2003543080 A JP 2003543080A JP 2003543080 A JP2003543080 A JP 2003543080A JP 2005508822 A5 JP2005508822 A5 JP 2005508822A5
Authority
JP
Japan
Prior art keywords
gan
polycrystalline
container
gallium nitride
range
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2003543080A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005508822A (ja
JP4349907B2 (ja
Filing date
Publication date
Priority claimed from US10/001,575 external-priority patent/US6861130B2/en
Application filed filed Critical
Publication of JP2005508822A publication Critical patent/JP2005508822A/ja
Publication of JP2005508822A5 publication Critical patent/JP2005508822A5/ja
Application granted granted Critical
Publication of JP4349907B2 publication Critical patent/JP4349907B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2003543080A 2001-11-02 2002-10-30 焼結多結晶窒化ガリウム及びその製造方法 Expired - Fee Related JP4349907B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/001,575 US6861130B2 (en) 2001-11-02 2001-11-02 Sintered polycrystalline gallium nitride and its production
PCT/US2002/034792 WO2003041138A2 (en) 2001-11-02 2002-10-30 Sintered polycrystalline gallium nitride

Publications (3)

Publication Number Publication Date
JP2005508822A JP2005508822A (ja) 2005-04-07
JP2005508822A5 true JP2005508822A5 (enExample) 2006-01-05
JP4349907B2 JP4349907B2 (ja) 2009-10-21

Family

ID=21696764

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003543080A Expired - Fee Related JP4349907B2 (ja) 2001-11-02 2002-10-30 焼結多結晶窒化ガリウム及びその製造方法

Country Status (9)

Country Link
US (1) US6861130B2 (enExample)
EP (1) EP1444165A2 (enExample)
JP (1) JP4349907B2 (enExample)
KR (1) KR100903251B1 (enExample)
CN (1) CN1280182C (enExample)
AU (1) AU2002363469A1 (enExample)
PL (1) PL368506A1 (enExample)
WO (1) WO2003041138A2 (enExample)
ZA (1) ZA200403783B (enExample)

Families Citing this family (81)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1292494C (zh) * 2000-04-26 2006-12-27 奥斯兰姆奥普托半导体有限责任公司 发光半导体元件及其制造方法
DE10051465A1 (de) * 2000-10-17 2002-05-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterbauelements auf GaN-Basis
EP1277241B1 (de) * 2000-04-26 2017-12-13 OSRAM Opto Semiconductors GmbH Lumineszenzdiodenchip auf der basis von gan
TWI289944B (en) * 2000-05-26 2007-11-11 Osram Opto Semiconductors Gmbh Light-emitting-diode-element with a light-emitting-diode-chip
US7125453B2 (en) * 2002-01-31 2006-10-24 General Electric Company High temperature high pressure capsule for processing materials in supercritical fluids
US7063741B2 (en) * 2002-03-27 2006-06-20 General Electric Company High pressure high temperature growth of crystalline group III metal nitrides
WO2005095682A1 (ja) * 2004-03-31 2005-10-13 Ngk Insulators, Ltd. 窒化ガリウム単結晶の育成方法および窒化ガリウム単結晶
KR100843394B1 (ko) * 2004-04-27 2008-07-03 아리조나 보드 오브 리전트스, 아리조나주의 아리조나 주립대 대행법인 고 발광성 도프된 금속 질화물 분말을 합성하는 방법
WO2006010075A1 (en) * 2004-07-09 2006-01-26 Cornell Research Foundation, Inc. Method of making group iii nitrides
US20080193363A1 (en) * 2004-08-20 2008-08-14 Mitsubishi Chemical Corporation Metal Nitrides and Process for Production Thereof
US7558631B2 (en) * 2004-12-21 2009-07-07 Ebr Systems, Inc. Leadless tissue stimulation systems and methods
US8858708B1 (en) 2005-01-03 2014-10-14 The United States Of America As Represented By The Secretary Of The Air Force Polycrystalline III-nitrides
US7704324B2 (en) * 2005-01-25 2010-04-27 General Electric Company Apparatus for processing materials in supercritical fluids and methods thereof
US7942970B2 (en) * 2005-12-20 2011-05-17 Momentive Performance Materials Inc. Apparatus for making crystalline composition
US7935382B2 (en) * 2005-12-20 2011-05-03 Momentive Performance Materials, Inc. Method for making crystalline composition
US8039412B2 (en) * 2005-12-20 2011-10-18 Momentive Performance Materials Inc. Crystalline composition, device, and associated method
US9157167B1 (en) 2008-06-05 2015-10-13 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US8871024B2 (en) 2008-06-05 2014-10-28 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US8097081B2 (en) * 2008-06-05 2012-01-17 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US20090301388A1 (en) * 2008-06-05 2009-12-10 Soraa Inc. Capsule for high pressure processing and method of use for supercritical fluids
US8303710B2 (en) * 2008-06-18 2012-11-06 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US20100006873A1 (en) * 2008-06-25 2010-01-14 Soraa, Inc. HIGHLY POLARIZED WHITE LIGHT SOURCE BY COMBINING BLUE LED ON SEMIPOLAR OR NONPOLAR GaN WITH YELLOW LED ON SEMIPOLAR OR NONPOLAR GaN
US20090320745A1 (en) * 2008-06-25 2009-12-31 Soraa, Inc. Heater device and method for high pressure processing of crystalline materials
US20100003492A1 (en) * 2008-07-07 2010-01-07 Soraa, Inc. High quality large area bulk non-polar or semipolar gallium based substrates and methods
WO2011044554A1 (en) 2009-10-09 2011-04-14 Soraa, Inc. Method for synthesis of high quality large area bulk gallium based crystals
US9404197B2 (en) 2008-07-07 2016-08-02 Soraa, Inc. Large area, low-defect gallium-containing nitride crystals, method of making, and method of use
JP2011530194A (ja) 2008-08-04 2011-12-15 ソラア インコーポレーテッド 物質および蛍光体を含んだ非分極性あるいは半極性のガリウムを用いた白色灯デバイス
US8284810B1 (en) 2008-08-04 2012-10-09 Soraa, Inc. Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods
US8021481B2 (en) * 2008-08-07 2011-09-20 Soraa, Inc. Process and apparatus for large-scale manufacturing of bulk monocrystalline gallium-containing nitride
US8979999B2 (en) * 2008-08-07 2015-03-17 Soraa, Inc. Process for large-scale ammonothermal manufacturing of gallium nitride boules
US8323405B2 (en) * 2008-08-07 2012-12-04 Soraa, Inc. Process and apparatus for growing a crystalline gallium-containing nitride using an azide mineralizer
US10036099B2 (en) 2008-08-07 2018-07-31 Slt Technologies, Inc. Process for large-scale ammonothermal manufacturing of gallium nitride boules
US8430958B2 (en) * 2008-08-07 2013-04-30 Soraa, Inc. Apparatus and method for seed crystal utilization in large-scale manufacturing of gallium nitride
US20100031873A1 (en) * 2008-08-07 2010-02-11 Soraa, Inc. Basket process and apparatus for crystalline gallium-containing nitride
US8148801B2 (en) 2008-08-25 2012-04-03 Soraa, Inc. Nitride crystal with removable surface layer and methods of manufacture
US7976630B2 (en) 2008-09-11 2011-07-12 Soraa, Inc. Large-area seed for ammonothermal growth of bulk gallium nitride and method of manufacture
US8354679B1 (en) 2008-10-02 2013-01-15 Soraa, Inc. Microcavity light emitting diode method of manufacture
US20100295088A1 (en) * 2008-10-02 2010-11-25 Soraa, Inc. Textured-surface light emitting diode and method of manufacture
US8455894B1 (en) 2008-10-17 2013-06-04 Soraa, Inc. Photonic-crystal light emitting diode and method of manufacture
US9589792B2 (en) 2012-11-26 2017-03-07 Soraa, Inc. High quality group-III metal nitride crystals, methods of making, and methods of use
USRE47114E1 (en) 2008-12-12 2018-11-06 Slt Technologies, Inc. Polycrystalline group III metal nitride with getter and method of making
US9543392B1 (en) 2008-12-12 2017-01-10 Soraa, Inc. Transparent group III metal nitride and method of manufacture
US8987156B2 (en) 2008-12-12 2015-03-24 Soraa, Inc. Polycrystalline group III metal nitride with getter and method of making
US8461071B2 (en) * 2008-12-12 2013-06-11 Soraa, Inc. Polycrystalline group III metal nitride with getter and method of making
US8878230B2 (en) * 2010-03-11 2014-11-04 Soraa, Inc. Semi-insulating group III metal nitride and method of manufacture
US20110100291A1 (en) * 2009-01-29 2011-05-05 Soraa, Inc. Plant and method for large-scale ammonothermal manufacturing of gallium nitride boules
US8299473B1 (en) 2009-04-07 2012-10-30 Soraa, Inc. Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors
US8306081B1 (en) 2009-05-27 2012-11-06 Soraa, Inc. High indium containing InGaN substrates for long wavelength optical devices
US9250044B1 (en) 2009-05-29 2016-02-02 Soraa Laser Diode, Inc. Gallium and nitrogen containing laser diode dazzling devices and methods of use
US8509275B1 (en) 2009-05-29 2013-08-13 Soraa, Inc. Gallium nitride based laser dazzling device and method
US9800017B1 (en) 2009-05-29 2017-10-24 Soraa Laser Diode, Inc. Laser device and method for a vehicle
US8435347B2 (en) 2009-09-29 2013-05-07 Soraa, Inc. High pressure apparatus with stackable rings
US9564320B2 (en) 2010-06-18 2017-02-07 Soraa, Inc. Large area nitride crystal and method for making it
US8729559B2 (en) 2010-10-13 2014-05-20 Soraa, Inc. Method of making bulk InGaN substrates and devices thereon
TWI501939B (zh) 2010-12-20 2015-10-01 Tosoh Corp 氮化鎵燒結體或氮化鎵成形體及此等之製造方法
US8786053B2 (en) 2011-01-24 2014-07-22 Soraa, Inc. Gallium-nitride-on-handle substrate materials and devices and method of manufacture
US8492185B1 (en) 2011-07-14 2013-07-23 Soraa, Inc. Large area nonpolar or semipolar gallium and nitrogen containing substrate and resulting devices
US9694158B2 (en) 2011-10-21 2017-07-04 Ahmad Mohamad Slim Torque for incrementally advancing a catheter during right heart catheterization
US10029955B1 (en) 2011-10-24 2018-07-24 Slt Technologies, Inc. Capsule for high pressure, high temperature processing of materials and methods of use
KR102101597B1 (ko) 2011-10-28 2020-04-17 미쯔비시 케미컬 주식회사 질화물 결정의 제조 방법 및 질화물 결정
EP2772570A4 (en) * 2011-10-28 2015-03-04 Mitsubishi Chem Corp METHOD FOR PRODUCING A NITRIDE CRYSTAL AND NITRIDE CRYSTAL
US8482104B2 (en) 2012-01-09 2013-07-09 Soraa, Inc. Method for growth of indium-containing nitride films
US10145026B2 (en) 2012-06-04 2018-12-04 Slt Technologies, Inc. Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules
US9275912B1 (en) 2012-08-30 2016-03-01 Soraa, Inc. Method for quantification of extended defects in gallium-containing nitride crystals
US9299555B1 (en) 2012-09-28 2016-03-29 Soraa, Inc. Ultrapure mineralizers and methods for nitride crystal growth
US20180072570A1 (en) 2015-03-30 2018-03-15 Tosoh Corporation Gallium nitride-based sintered compact and method for manufacturing same
US11437774B2 (en) 2015-08-19 2022-09-06 Kyocera Sld Laser, Inc. High-luminous flux laser-based white light source
US10174438B2 (en) 2017-03-30 2019-01-08 Slt Technologies, Inc. Apparatus for high pressure reaction
EP3865466A4 (en) * 2018-10-10 2022-05-25 Tosoh Corporation GALLIUM NITRIDE BASED SINTERED BODY AND METHOD FOR PRODUCTION THEREOF
JP7500941B2 (ja) * 2018-10-26 2024-06-18 東ソー株式会社 窒化ガリウム系焼結体及びその製造方法
US11239637B2 (en) 2018-12-21 2022-02-01 Kyocera Sld Laser, Inc. Fiber delivered laser induced white light system
US11421843B2 (en) 2018-12-21 2022-08-23 Kyocera Sld Laser, Inc. Fiber-delivered laser-induced dynamic light system
US11466384B2 (en) 2019-01-08 2022-10-11 Slt Technologies, Inc. Method of forming a high quality group-III metal nitride boule or wafer using a patterned substrate
US12152742B2 (en) 2019-01-18 2024-11-26 Kyocera Sld Laser, Inc. Laser-based light guide-coupled wide-spectrum light system
US12000552B2 (en) 2019-01-18 2024-06-04 Kyocera Sld Laser, Inc. Laser-based fiber-coupled white light system for a vehicle
EP4104201A1 (en) 2020-02-11 2022-12-21 SLT Technologies, Inc. Improved group iii nitride substrate, method of making, and method of use
US11721549B2 (en) 2020-02-11 2023-08-08 Slt Technologies, Inc. Large area group III nitride crystals and substrates, methods of making, and methods of use
US12091771B2 (en) 2020-02-11 2024-09-17 Slt Technologies, Inc. Large area group III nitride crystals and substrates, methods of making, and methods of use
JP7483669B2 (ja) 2020-11-02 2024-05-15 エスエルティー テクノロジーズ インコーポレイテッド 窒化物結晶成長のための超高純度鉱化剤及び改良された方法
WO2025211136A1 (ja) * 2024-04-01 2025-10-09 東ソー株式会社 窒化ガリウム焼結体及びその製造方法
JP7726434B1 (ja) * 2024-04-01 2025-08-20 東ソー株式会社 窒化ガリウム焼結体及びその製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3829556A (en) * 1972-03-24 1974-08-13 Bell Telephone Labor Inc Growth of gallium nitride crystals
US4146379A (en) * 1977-08-24 1979-03-27 University Of Southern California Process for densifying polycrystalline articles
WO1998011017A1 (en) * 1996-09-10 1998-03-19 The Regents Of The University Of California Process for rapid solid-state formation of refractory nitrides
US6096282A (en) 1996-09-10 2000-08-01 The Regents Of The University Of California Instantaneous synthesis of refractory nitrides from solid precursors
US6270569B1 (en) 1997-06-11 2001-08-07 Hitachi Cable Ltd. Method of fabricating nitride crystal, mixture, liquid phase growth method, nitride crystal, nitride crystal powders, and vapor phase growth method
US6177057B1 (en) * 1999-02-09 2001-01-23 The United States Of America As Represented By The Secretary Of The Navy Process for preparing bulk cubic gallium nitride
US6113985A (en) 1999-04-27 2000-09-05 The United States Of America As Represented By Secretary Of The Air Force Process for the manufacture of group III nitride targets for use in sputtering and similar equipment

Similar Documents

Publication Publication Date Title
JP2005508822A5 (enExample)
JP4349907B2 (ja) 焼結多結晶窒化ガリウム及びその製造方法
CN1249194C (zh) 多晶磨料
CN110983264B (zh) 一种高密度细晶粒易成型的w靶材的制备方法
CN109180187B (zh) 高度取向纳米max相陶瓷和max相原位自生氧化物纳米复相陶瓷的制备方法
TW200948743A (en) Polycrystalline mgo sintered compact, process for producing the polycrystalline mgo sintered compact, and mgo target for sputtering
JPS61183422A (ja) 多孔質体の製造方法
JP3992595B2 (ja) 高純度高硬度超微粒ダイヤモンド焼結体の製造法
CN113526960B (zh) 一种碳化硅陶瓷及其热等静压烧结工艺
JP6281955B2 (ja) 立方晶窒化ホウ素の機能化及びその製造方法
JP2000513689A (ja) 新規なシリコンカーバイドダミーウエハー
CN107602123A (zh) 一种聚晶金刚石超硬材料及其制备方法
JP6374606B2 (ja) ガラス被覆cbn研磨材の作製方法
JP4014415B2 (ja) 高硬度微粒ダイヤモンド焼結体の製造法
CN106866152A (zh) 一种yb4块体的制备方法
JPS6213311B2 (enExample)
JP2006169080A (ja) 立方晶窒化硼素多結晶体の製造方法
KR102725374B1 (ko) 고도로 에칭된 입자 표면과 높은 인성 인덱스를 갖는 입방정 질화 붕소 입자 집단
JPH02164433A (ja) 多結晶型立方晶窒化ほう素粒子の製造方法
JP2021091564A (ja) 膨張黒鉛シート用材料、膨張黒鉛シート、膨張黒鉛シート用材料の製造方法及び膨張黒鉛シートの製造方法
JP2774386B2 (ja) 立方晶窒化ほう素焼結体の製造方法
JP2672681B2 (ja) 立方晶窒化ほう素の製造方法
JP3472798B2 (ja) 透光性非晶質高圧窒化ホウ素塊
JPH05105461A (ja) ガラスモールドレンズの成形型
JPS61261269A (ja) 高密度窒化アルミニウム焼結体の製造方法