CN1279340C - 压力传感器 - Google Patents

压力传感器 Download PDF

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CN1279340C
CN1279340C CNB031243541A CN03124354A CN1279340C CN 1279340 C CN1279340 C CN 1279340C CN B031243541 A CNB031243541 A CN B031243541A CN 03124354 A CN03124354 A CN 03124354A CN 1279340 C CN1279340 C CN 1279340C
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pressure transducer
pressure
semiconductor material
diaphragm
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CN1455234A (zh
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H·雅各布森
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Infineon Technologies AG
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Sensonor AS
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0072Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
    • G01L9/0073Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/06Means for preventing overload or deleterious influence of the measured medium on the measuring device or vice versa
    • G01L19/069Protection against electromagnetic or electrostatic interferences

Abstract

一种包括具有在其上形成的电极的玻璃板的电容型压力传感器。膜片由半导体材料形成并且粘结在玻璃衬底上以形成至少包括一部分电极的封闭空腔、从而形成电容元件,使用时,电信号可以通过所述电容元件以测定指示待测压力的所述电容器的电容量。

Description

压力传感器
技术领域
本发明涉及压力传感器,更具体地说,涉及电容型压力传感器。
背景技术
压力传感器广泛应用于许多日益不同的领域,包括诸如医药仪器等重要领域、引擎控制和轮胎压力监控等汽车应用、工业过程控制以及航空电子学产业。基于硅的压力传感器最常用的转换原理是电容检测和压阻检测。
一般认为压阻传感器比电容传感器更为坚固。另一个优点是它们的输出信号与输入成正比并有良好的线性。另一方面,电容传感器比压阻型传感器优越的地方在于它们消耗的功率较少,但却具有非线性的直接输出信号,且对电磁干扰更为敏感。可以使电容传感器的尺寸很小,并且容易通过表面微机械加工来制造。但是,它们不够坚固,在多数应用中它们的压敏膜片需要用凝胶或其它柔性材料保护、以便抗压力介质。由于加在膜片上的质量的缘故,振动敏感度提高了。已在专利公开EP-1-742581EP-A-994330中描述了制造硅压力传感器和惰性传感器的先进的和实践证明有效的方法。
发明内容
本发明寻求提供一种能克服上述问题的用于测量压力的电容硅传感器结构。
根据本发明,提供一种电容型压力传感器,它包括:
玻璃板,其上形成有电极;以及
膜片,它由半导体材料制成并粘结在玻璃衬底上以形成至少包含所述电极的一部分的封闭空腔,并从而形成电容元件,使用时,电信号可以穿过该电容元件、以确定指示待测压力的电容量。
传感器具有:压敏膜片,作为电容器中的可动电极;最好用阳极焊密封的芯片上真空参考容积,作为电容器的间隙,并具有玻璃上电容器的对电极。这些都通过由玻璃上的金属互连件、玻璃上的金属和硅部件上的金属之间的按压触点构成的导电系统连接到密封空腔的外部,并且与埋置在硅衬底中的导体相连,以便横跨气密密封空腔连接到密封区外的金属互连件和导线粘结区。本发明产生坚固和可靠的具有良好介质兼容性的压力传感器。所用的工艺技术使制造成本低廉,对于诸如汽车工业中的大量应用十分有利。
通过在同一芯片上加入第二个匹配的电容器作为压敏电容器并测量两个电容值的相对差异,可以获得更高的测量精度。由于在所述两个电容器上封装应力具有几乎完全相同的效果,所以,通过很好地匹配并跟踪两个电容器值在温度和时间上的零点,可以获得高的精度。
利用硅平面加工,结合调制解调器的硅批量微加工工艺,例如干法蚀刻、各向异性和选择性蚀刻、玻璃的薄膜金属化和阳极焊等(这些都是在微系统技术(MST)和微机电系统(MEMS)中众所周知的技术),就可实现本发明。
附图说明
为了更好的理解本发明及其特征和优点,参考以下附图,附图中:
图1是根据本发明的第一类电容绝对压力传感器的截面图;
图2是图1的压力传感器的顶视图,图1的截面图是通过线A-A截取的;
图3是图1传感器的截面图,但具有第二玻璃层以改善机械稳定性并具有穿过第一玻璃层的压力入口;
图4是图3的实例,其中膜片具有突起的中心部分、使得膜片在暴露于压力下时作更具活塞型的运动;
图5是根据本发明的第二类电容型压力传感器的截面图,其玻璃层上具有电互连件;
图6示出电容测量桥,可用于本发明的使用两个匹配电容器的高精度版本;
图7是根据本发明的具有两个匹配电容器的芯片的截面图;其中一个匹配电容器具有压力入口,而另一个匹配电容器被密封并用作匹配参考;
图8是根据本发明的差动测量装置;以及
图9是可以用于形成图4的传感器的工艺序列。
具体实施方式
根据本发明的传感装置示于图1和2。
传感器具有:硅部件10,它形成在具有刚性支撑凸缘101的衬底100上;以及表面层,所述表面层作为第一传导类型的凸缘101和弹性薄膜103的一部分。硅衬底10包含电导系统,所述电导系统包括第二传导类型的掺杂导体106和金属互连件108和109,所述掺杂导体106埋置在第一传导类型的外延层102下方。埋置导体106以及金属互连件108和109借助第二传导类型的扩散型(plugdiffusion)105a和105b并通过在表面钝化层111中形成的接触孔相互电连接。在硅部件中横跨膜片延伸的区域蚀刻凹槽。
第一玻璃部件120在其表面上具有薄膜表面导电系统121,所述薄膜表面导电系统121由金属互连件构成并且形成面对硅膜片103的平板电极。将玻璃120用阳极焊焊接到硅部件10上,形成完整的密封环130。硅部件中的蚀刻的凹槽形成定标真空参考容积115。
衬底10和玻璃部件120与玻璃120上的作为第一电极的金属层121一起形成电容传感装置。所述电极通过在电极121、互连件108和埋置在密封区130下的导体106之间形成的按压触点连接到密封空腔外的导线焊片109。密封空腔115起电容器中的电隔离间隙的作用。弹性膜片103是可变电容器的第二电极,通过表面层101电连接到密封空腔外的导线焊片112上(图1未示出)。
当压力作用在膜片103上、将膜片压向玻璃上的对电极121时,电容器中的间隙115变小、电容量增加,于是提供传感功能。
最好,如图3所示,将具有孔126的第二玻璃衬底125用密封件127粘结到硅衬底上。例如,可以用阳极焊进行焊接。
可以如图4所示那样修改传感装置,即,具有中心凸起结构104,以便加强硅膜片的中心部分。
可以如图5所示那样修改传感装置,即,具有在玻璃120上的导线焊片129以及在玻璃上的互连件和硅部件之间的附加的按压触点123。
在以上实例中示出了具有一个电容器的压力传感器。对于要求高的总测量精度(包括低的长期漂移)的应用场合,可以对以上装置进行修改。
图7中示出用两个电容器建立的传感装置。在该装置中,按照上述说明,一个电容器作成压敏电容器,而另一个电容器完全相同,但不是压敏的,因为它没有压力入口。因此在膜片233上没有压力差。所述两个电容器也可完全相同,以便在不加压力时得到它们电容值的最佳可能匹配。
可以以差动压力传感器的形式建立传感装置,如图8所示,具有两个入口326和336以及共用真空参考容积315,335。
图9示出根据本发明的装置(如图4所示)的制造工艺序列。可以看出所述系列很简单,是一个不复杂因而成本低廉的制造过程。
在此实例中,制造过程以晶向为<1-0-0>的p-型硅衬底100开始(见图9a)。使用标准的平版印刷法、离子注入和高温扩散n-型掺杂(例如磷),在衬底中形成n-区101和104,见图9b。下一步是注入和向内扩散硼,形成p-区106。然后在硅衬底上面生长n-型外延层102,形成埋置的p-区106(见图9c)。然后用干法蚀刻和/或湿法蚀刻在表面102上蚀刻凹槽,如图9d所示。在此图中,进行了两步蚀刻,一步是为将在后来形成的按压触点108形成距离,如图9e所示,另一步是形成电容器中的间隙(见图9g标注D)。然后,在埋置导体106的每一端形成利用硼形成的触点扩散区105a和105b。然后在钝化层111中形成触点孔,再利用金属,例如铝,形成金属互连件和导线焊接区109。然后利用蚀刻掩模在衬底的另一面进行各向异性或选择性蚀刻,如图9f所示。电化学蚀刻扩大至衬底100和n-区101,104与n-型外延层102之间的pn-结。接着形成压敏膜片,它具有作为外延层102的一部分形成的薄的弹性区,并且具有刚性的中心部分101b。
通过以下步骤完成传感装置的制造:在真空中用阳极焊法将已形成有金属电极和薄膜互连件121的玻璃衬底120焊接到硅衬底100上,得到如图9g和图4所示的结构,它具有阳极焊接的密封区130和在硅衬底表面上蚀刻凹槽形成的密封空腔115。

Claims (16)

1.一种电容型压力传感器,它包括:
玻璃板,其上形成有电极;以及
膜片,它由半导体材料形成并且粘结在所述玻璃衬底上以形成至少包括所述电极的一部分的封闭空腔、从而限定电容元件,使用时,电信号可以通过所述电容元件、以测定指示待测压力的所述电容器的电容量。
2.如权利要求1所述的压力传感器,其特征在于:所述膜片是通过对所述半导体材料进行微加工而形成的。
3.如权利要求1或2所述的压力传感器,其特征在于:所述半导体材料是硅。
4.如上述权利要求中任何一项所述的压力传感器,其特征在于:所述半导体材料包括刚性支撑凸缘。
5.如上述权利要求中任何一项所述的压力传感器,其特征在于:设置连接到每个所述电极和所述膜片的电连接件。
6.如权利要求5所述的压力传感器,其特征在于:通过在所述半导体材料中形成掺杂导体来设置所述电极的所述电连接件。
7.如权利要求5或6所述的压力传感器,其特征在于:利用所述半导体材料设置所述膜片的所述电连接件。
8.如上述权利要求中任何一项所述的压力传感器,其特征在于:通过阳极焊设置所述玻璃衬底和所述半导体材料之间的所述密封。
9.如上述权利要求中任何一项所述的压力传感器,其特征在于:使用时,把具有形成压力入口的孔的第二玻璃衬底粘结到所述半导体材料上、使得所述半导体材料层夹在两个玻璃衬底层之间。
10.如上述权利要求中任何一项所述的压力传感器,其特征在于:所述膜片包括刚性中心凸起。
11.如上述权利要求中任何一项所述的压力传感器,其特征在于:在所述空腔外部设置附加的按压触点,以便用于与其他装置相互配合。
12.一种压力传感系统,它包括至少两个如上述权利要求中任何一项所述的电容型压力传感器。
13.如权利要求12所述的压力传感系统,其特征在于:每一个所述压力传感器的膜片由半导体材料的单一部分形成。
14.如权利要求12或13所述的压力传感系统,其特征在于:每一个所述压力传感器共用同一块玻璃板。
15.如权利要求12到14中任一项所述的压力传感系统,其特征在于:每一个压力传感器配备有压力入口、使得所述系统成为差动压力传感装置。
16.如权利要求12到14中任一项所述的压力传感系统,其特征在于:一个压力传感器没有配备压力入口、使得该传感器用作参考传感器。
CNB031243541A 2002-05-01 2003-04-30 压力传感器 Expired - Fee Related CN1279340C (zh)

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EP02253102.4A EP1359402B1 (en) 2002-05-01 2002-05-01 Pressure sensor

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