CN1455234A - 压力传感器 - Google Patents
压力传感器 Download PDFInfo
- Publication number
- CN1455234A CN1455234A CN03124354A CN03124354A CN1455234A CN 1455234 A CN1455234 A CN 1455234A CN 03124354 A CN03124354 A CN 03124354A CN 03124354 A CN03124354 A CN 03124354A CN 1455234 A CN1455234 A CN 1455234A
- Authority
- CN
- China
- Prior art keywords
- pressure transducer
- pressure
- semiconductor material
- diaphragm
- mentioned
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011521 glass Substances 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 13
- 239000004065 semiconductor Substances 0.000 claims abstract description 12
- 239000003990 capacitor Substances 0.000 claims description 26
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- 239000004020 conductor Substances 0.000 claims description 7
- 238000007789 sealing Methods 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims description 2
- 238000012360 testing method Methods 0.000 claims description 2
- 239000002775 capsule Substances 0.000 claims 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 20
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 239000010408 film Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
- G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/06—Means for preventing overload or deleterious influence of the measured medium on the measuring device or vice versa
- G01L19/069—Protection against electromagnetic or electrostatic interferences
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
Description
Claims (16)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP02253102.4 | 2002-05-01 | ||
EP02253102.4A EP1359402B1 (en) | 2002-05-01 | 2002-05-01 | Pressure sensor |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1455234A true CN1455234A (zh) | 2003-11-12 |
CN1279340C CN1279340C (zh) | 2006-10-11 |
Family
ID=28799736
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB031243541A Expired - Fee Related CN1279340C (zh) | 2002-05-01 | 2003-04-30 | 压力传感器 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6874367B2 (zh) |
EP (1) | EP1359402B1 (zh) |
JP (1) | JP2004132947A (zh) |
KR (1) | KR20030086228A (zh) |
CN (1) | CN1279340C (zh) |
BR (1) | BR0300955A (zh) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102235925A (zh) * | 2010-05-05 | 2011-11-09 | 无锡感芯半导体有限公司 | 具有垂直电馈通的电容式压力传感器及其制造方法 |
CN101620022B (zh) * | 2008-07-01 | 2011-12-21 | 欣兴电子股份有限公司 | 压力感测元件封装及其制作方法 |
CN101661012B (zh) * | 2009-08-11 | 2013-03-13 | 南京理工大学 | 用于生化检测的微薄膜电容式表面应力传感器及其制作方法 |
CN101453682B (zh) * | 2004-10-29 | 2013-09-11 | 山东共达电声股份有限公司 | 无背极板的硅传声器 |
CN103311118A (zh) * | 2012-03-08 | 2013-09-18 | 英飞凌科技股份有限公司 | 半导体器件、晶片组件以及制造晶片组件和半导体器件的方法 |
CN104517914A (zh) * | 2013-09-27 | 2015-04-15 | 英飞凌科技股份有限公司 | 具有集成的密封的压力传感器封装 |
CN104764558A (zh) * | 2014-01-07 | 2015-07-08 | 霍尼韦尔国际公司 | 具有具凸起的膜片的压力传感器 |
CN104848970A (zh) * | 2014-02-14 | 2015-08-19 | 欧姆龙株式会社 | 静电容量型压力传感器、压力检测器及输入装置 |
CN107290084A (zh) * | 2017-06-28 | 2017-10-24 | 京东方科技集团股份有限公司 | 一种压力传感器及其制作方法、电子器件 |
CN107894294A (zh) * | 2016-10-03 | 2018-04-10 | 大陆汽车系统公司 | 带有扩展浅多边形腔的带腔绝缘体上硅mems压力传感装置 |
Families Citing this family (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7111518B1 (en) * | 2003-09-19 | 2006-09-26 | Silicon Microstructures, Inc. | Extremely low cost pressure sensor realized using deep reactive ion etching |
US7096738B2 (en) * | 2004-03-18 | 2006-08-29 | Rosemount Inc. | In-line annular seal-based pressure device |
US7028552B2 (en) * | 2004-05-17 | 2006-04-18 | Kavlico Corporation | Reliable piezo-resistive pressure sensor |
US6952955B1 (en) | 2004-07-28 | 2005-10-11 | Lear Corporation | Adjustable mounting of tire monitoring assembly |
US6904795B1 (en) | 2004-09-14 | 2005-06-14 | Lear Corporation | Sealed mounting of tire monitoring assembly |
US6923069B1 (en) | 2004-10-18 | 2005-08-02 | Honeywell International Inc. | Top side reference cavity for absolute pressure sensor |
EP1707931B1 (en) * | 2005-03-31 | 2013-03-27 | STMicroelectronics Srl | Analog data-input device provided with a microelectromechanical pressure sensor |
US7622782B2 (en) | 2005-08-24 | 2009-11-24 | General Electric Company | Pressure sensors and methods of making the same |
EP1762925B1 (en) * | 2005-09-09 | 2016-12-21 | STMicroelectronics Srl | Analog input device with integrated pressure sensor and electronic apparatus equipped with said input device. |
EP1811666A1 (en) * | 2006-01-19 | 2007-07-25 | 3M Innovative Properties Company | Proximity sensor and method for manufacturing the same |
US7487681B1 (en) * | 2006-08-06 | 2009-02-10 | Silicon Microstructures Inc. | Pressure sensor adjustment using backside mask |
KR101004574B1 (ko) | 2006-09-06 | 2010-12-30 | 히타치 긴조쿠 가부시키가이샤 | 반도체 센서 장치 및 그 제조 방법 |
US7543604B2 (en) * | 2006-09-11 | 2009-06-09 | Honeywell International Inc. | Control valve |
US7644731B2 (en) | 2006-11-30 | 2010-01-12 | Honeywell International Inc. | Gas valve with resilient seat |
US7793550B2 (en) | 2008-08-25 | 2010-09-14 | Infineon Technologies Ag | Sensor device including two sensors embedded in a mold material |
US8358047B2 (en) * | 2008-09-29 | 2013-01-22 | Xerox Corporation | Buried traces for sealed electrostatic membrane actuators or sensors |
US7902851B2 (en) * | 2009-06-10 | 2011-03-08 | Medtronic, Inc. | Hermeticity testing |
US8172760B2 (en) | 2009-06-18 | 2012-05-08 | Medtronic, Inc. | Medical device encapsulated within bonded dies |
US11169010B2 (en) * | 2009-07-27 | 2021-11-09 | Integra Lifesciences Switzerland Sàrl | Method for the calibration of an implantable sensor |
US8393222B2 (en) | 2010-02-27 | 2013-03-12 | Codman Neuro Sciences Sárl | Apparatus and method for minimizing drift of a piezo-resistive pressure sensor due to progressive release of mechanical stress over time |
DE102010038534A1 (de) * | 2010-07-28 | 2012-02-02 | Robert Bosch Gmbh | Sensorelement zur kapazitiven Differenzdruckmessung |
US8666505B2 (en) | 2010-10-26 | 2014-03-04 | Medtronic, Inc. | Wafer-scale package including power source |
US8424388B2 (en) | 2011-01-28 | 2013-04-23 | Medtronic, Inc. | Implantable capacitive pressure sensor apparatus and methods regarding same |
US8590387B2 (en) | 2011-03-31 | 2013-11-26 | DePuy Synthes Products, LLC | Absolute capacitive micro pressure sensor |
DE102011081887A1 (de) * | 2011-08-31 | 2013-02-28 | Robert Bosch Gmbh | Polymerschichtsystem-Drucksensorvorrichtung und Polymerschichtsystem-Drucksensorverfahren |
US9074770B2 (en) | 2011-12-15 | 2015-07-07 | Honeywell International Inc. | Gas valve with electronic valve proving system |
US9835265B2 (en) | 2011-12-15 | 2017-12-05 | Honeywell International Inc. | Valve with actuator diagnostics |
US9851103B2 (en) | 2011-12-15 | 2017-12-26 | Honeywell International Inc. | Gas valve with overpressure diagnostics |
US8947242B2 (en) | 2011-12-15 | 2015-02-03 | Honeywell International Inc. | Gas valve with valve leakage test |
US8905063B2 (en) | 2011-12-15 | 2014-12-09 | Honeywell International Inc. | Gas valve with fuel rate monitor |
US9995486B2 (en) | 2011-12-15 | 2018-06-12 | Honeywell International Inc. | Gas valve with high/low gas pressure detection |
US8839815B2 (en) | 2011-12-15 | 2014-09-23 | Honeywell International Inc. | Gas valve with electronic cycle counter |
US9557059B2 (en) | 2011-12-15 | 2017-01-31 | Honeywell International Inc | Gas valve with communication link |
US9846440B2 (en) | 2011-12-15 | 2017-12-19 | Honeywell International Inc. | Valve controller configured to estimate fuel comsumption |
US8899264B2 (en) | 2011-12-15 | 2014-12-02 | Honeywell International Inc. | Gas valve with electronic proof of closure system |
US9234661B2 (en) | 2012-09-15 | 2016-01-12 | Honeywell International Inc. | Burner control system |
US10422531B2 (en) | 2012-09-15 | 2019-09-24 | Honeywell International Inc. | System and approach for controlling a combustion chamber |
EP2868970B1 (en) | 2013-10-29 | 2020-04-22 | Honeywell Technologies Sarl | Regulating device |
CN103606565B (zh) * | 2013-11-27 | 2016-05-11 | 苏州科技学院 | 压力传感器敏感元件的制造工艺 |
US10024439B2 (en) | 2013-12-16 | 2018-07-17 | Honeywell International Inc. | Valve over-travel mechanism |
US9841122B2 (en) | 2014-09-09 | 2017-12-12 | Honeywell International Inc. | Gas valve with electronic valve proving system |
US9645584B2 (en) | 2014-09-17 | 2017-05-09 | Honeywell International Inc. | Gas valve with electronic health monitoring |
US10503181B2 (en) | 2016-01-13 | 2019-12-10 | Honeywell International Inc. | Pressure regulator |
US10549982B2 (en) | 2016-02-15 | 2020-02-04 | Stmicroelectronics S.R.L. | Pressure sensor encapsulated in elastomeric material, and system including the pressure sensor |
US10564062B2 (en) | 2016-10-19 | 2020-02-18 | Honeywell International Inc. | Human-machine interface for gas valve |
US11073281B2 (en) | 2017-12-29 | 2021-07-27 | Honeywell International Inc. | Closed-loop programming and control of a combustion appliance |
US10697815B2 (en) | 2018-06-09 | 2020-06-30 | Honeywell International Inc. | System and methods for mitigating condensation in a sensor module |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4426673A (en) * | 1976-03-12 | 1984-01-17 | Kavlico Corporation | Capacitive pressure transducer and method of making same |
US4388668A (en) * | 1976-03-12 | 1983-06-14 | Kaylico Corporation | Capacitive pressure transducer |
US4390925A (en) * | 1981-08-26 | 1983-06-28 | Leeds & Northrup Company | Multiple-cavity variable capacitance pressure transducer |
FI75426C (fi) * | 1984-10-11 | 1988-06-09 | Vaisala Oy | Absoluttryckgivare. |
US4730496A (en) * | 1986-06-23 | 1988-03-15 | Rosemount Inc. | Capacitance pressure sensor |
US4872945A (en) * | 1986-06-25 | 1989-10-10 | Motorola Inc. | Post seal etching of transducer diaphragm |
US5113868A (en) * | 1987-06-01 | 1992-05-19 | The Regents Of The University Of Michigan | Ultraminiature pressure sensor with addressable read-out circuit |
US4996627A (en) * | 1989-01-30 | 1991-02-26 | Dresser Industries, Inc. | High sensitivity miniature pressure transducer |
US5174156A (en) * | 1990-07-27 | 1992-12-29 | Honeywell Inc. | Pressure transducer with reduced offset signal |
DE4207952C1 (en) * | 1992-03-10 | 1993-04-15 | Mannesmann Ag, 4000 Duesseldorf, De | Capacitative differential pressure sensor for simple mfr. - comprises silicon diaphragm with edges having thinned areas, leaving central area, pressure input channels aligned with thickened edge region, and flat recesses |
JPH0666658A (ja) * | 1992-08-15 | 1994-03-11 | Stec Kk | 静電容量型圧力センサ |
JPH07167725A (ja) * | 1993-12-14 | 1995-07-04 | Yazaki Corp | 静電容量型圧力センサとその製造方法 |
WO1996013705A1 (de) * | 1994-10-29 | 1996-05-09 | Joshua Lanter | Verfahren zum herstellen von durchführungen elektrischer leitungen durch gasdichte verbindungen zwischen glas und silizium o.dgl. und von gasdichten durchführungen durch solche verbindungen und von drucksensoren mit solchen durchführungen |
FI100918B (fi) * | 1995-02-17 | 1998-03-13 | Vaisala Oy | Pintamikromekaaninen, symmetrinen paine-eroanturi |
JP3107516B2 (ja) * | 1996-05-01 | 2000-11-13 | 株式会社日立製作所 | 複合センサ |
US5792958A (en) * | 1997-01-21 | 1998-08-11 | Honeywell Inc. | Pressure sensor with a compressible insert to prevent damage from freezing |
JP3299715B2 (ja) * | 1998-04-01 | 2002-07-08 | 長野計器株式会社 | チップの電位取出構造および製造方法 |
US6109113A (en) * | 1998-06-11 | 2000-08-29 | Delco Electronics Corp. | Silicon micromachined capacitive pressure sensor and method of manufacture |
AU5489799A (en) * | 1998-08-19 | 2000-03-14 | Wisconsin Alumni Research Foundation | Sealed capacitive pressure sensors |
KR100300527B1 (ko) * | 1998-09-03 | 2001-10-27 | 윤덕용 | 밀봉형무선압력측정소자및그제조방법 |
DE19931773C1 (de) * | 1999-07-08 | 2000-11-30 | Daimler Chrysler Ag | Mikromechanisches Bauelement mit Kontaktdurchführungen, sowie Verfahren zur Herstellung eines mikromechanischen Bauelements |
-
2002
- 2002-05-01 EP EP02253102.4A patent/EP1359402B1/en not_active Expired - Lifetime
-
2003
- 2003-03-10 US US10/385,283 patent/US6874367B2/en not_active Expired - Lifetime
- 2003-03-14 KR KR10-2003-0016133A patent/KR20030086228A/ko not_active Application Discontinuation
- 2003-04-11 BR BR0300955-6A patent/BR0300955A/pt not_active Application Discontinuation
- 2003-04-30 JP JP2003124916A patent/JP2004132947A/ja active Pending
- 2003-04-30 CN CNB031243541A patent/CN1279340C/zh not_active Expired - Fee Related
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101453682B (zh) * | 2004-10-29 | 2013-09-11 | 山东共达电声股份有限公司 | 无背极板的硅传声器 |
CN101620022B (zh) * | 2008-07-01 | 2011-12-21 | 欣兴电子股份有限公司 | 压力感测元件封装及其制作方法 |
CN101661012B (zh) * | 2009-08-11 | 2013-03-13 | 南京理工大学 | 用于生化检测的微薄膜电容式表面应力传感器及其制作方法 |
CN102235925A (zh) * | 2010-05-05 | 2011-11-09 | 无锡感芯半导体有限公司 | 具有垂直电馈通的电容式压力传感器及其制造方法 |
CN102235925B (zh) * | 2010-05-05 | 2015-07-29 | 无锡康森斯克电子科技有限公司 | 具有垂直电馈通的电容式压力传感器及其制造方法 |
US9219020B2 (en) | 2012-03-08 | 2015-12-22 | Infineon Technologies Ag | Semiconductor device, wafer assembly and methods of manufacturing wafer assemblies and semiconductor devices |
CN103311118A (zh) * | 2012-03-08 | 2013-09-18 | 英飞凌科技股份有限公司 | 半导体器件、晶片组件以及制造晶片组件和半导体器件的方法 |
US9601376B2 (en) | 2012-03-08 | 2017-03-21 | Infineon Technologies Ag | Semiconductor device and method of manufacturing a semiconductor device having a glass piece and a single-crystalline semiconductor portion |
CN103311118B (zh) * | 2012-03-08 | 2016-07-06 | 英飞凌科技股份有限公司 | 半导体器件、晶片组件以及制造晶片组件和半导体器件的方法 |
CN104517914B (zh) * | 2013-09-27 | 2017-08-08 | 英飞凌科技股份有限公司 | 具有集成的密封的压力传感器封装 |
CN104517914A (zh) * | 2013-09-27 | 2015-04-15 | 英飞凌科技股份有限公司 | 具有集成的密封的压力传感器封装 |
CN104764558A (zh) * | 2014-01-07 | 2015-07-08 | 霍尼韦尔国际公司 | 具有具凸起的膜片的压力传感器 |
CN104848970A (zh) * | 2014-02-14 | 2015-08-19 | 欧姆龙株式会社 | 静电容量型压力传感器、压力检测器及输入装置 |
CN107894294A (zh) * | 2016-10-03 | 2018-04-10 | 大陆汽车系统公司 | 带有扩展浅多边形腔的带腔绝缘体上硅mems压力传感装置 |
CN107894294B (zh) * | 2016-10-03 | 2021-03-09 | 大陆汽车系统公司 | 带有扩展浅多边形腔的带腔绝缘体上硅mems压力传感装置 |
CN107290084A (zh) * | 2017-06-28 | 2017-10-24 | 京东方科技集团股份有限公司 | 一种压力传感器及其制作方法、电子器件 |
Also Published As
Publication number | Publication date |
---|---|
EP1359402A1 (en) | 2003-11-05 |
JP2004132947A (ja) | 2004-04-30 |
EP1359402B1 (en) | 2014-10-01 |
US20030205090A1 (en) | 2003-11-06 |
US6874367B2 (en) | 2005-04-05 |
BR0300955A (pt) | 2004-08-10 |
CN1279340C (zh) | 2006-10-11 |
KR20030086228A (ko) | 2003-11-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1279340C (zh) | 压力传感器 | |
US7150195B2 (en) | Sealed capacitive sensor for physical measurements | |
EP0720731B1 (en) | Suspended diaphragm pressure sensor | |
EP2189773B1 (en) | Design of wet/wet differential pressure sensor based on microelectronic packaging process | |
EP1316786B1 (en) | Capacity type pressure sensor and method of manufacturing the pressure sensor | |
US5447076A (en) | Capacitive force sensor | |
US7051595B2 (en) | Monolithic multi-functional integrated sensor and method for fabricating the same | |
US7563692B2 (en) | Microelectromechanical system pressure sensor and method for making and using | |
KR100486322B1 (ko) | 반도체압력센서 | |
EP0430676A2 (en) | Capacitive pressure sensor | |
CN1131983A (zh) | 屏蔽式电容传感器 | |
JP2007132946A (ja) | 圧力センサハウジング及び形態 | |
CN112964417B (zh) | 一种双动极板电容式压力敏感芯片 | |
CN212158891U (zh) | 压力传感器芯片、压力传感器及电子设备 | |
RU207048U1 (ru) | Тепловой датчик давления | |
CN115615587B (zh) | 压力传感器 | |
CN216246919U (zh) | 一种电容式芯片结构 | |
JP2001159573A (ja) | 圧力検出装置 | |
CN118687726A (zh) | 压电谐振式压力传感器、补偿系统及制备方法 | |
CN117053954A (zh) | 嵌入型电容式敏感芯片 | |
CN116973010A (zh) | 竖置极板电容式敏感芯片结构 | |
JP2024128956A (ja) | センサダイを有するセンサパッケージ | |
CN118026086A (zh) | 一种cmos mems双模态气体压力传感器及制备方法 | |
CN116222830A (zh) | 一种电容式芯片结构 | |
EP1552260A2 (en) | Pressure sensor and production thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: INFINEON TECHNOLOGIES AG Free format text: FORMER OWNER: INFINEON TECHNOLOGIES SENSONOR AS Effective date: 20110419 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: HORTEN, NORWAY TO: NEUBIBERG, GERMANY |
|
TR01 | Transfer of patent right |
Effective date of registration: 20110419 Address after: German Neubiberg Patentee after: Infineon Technologies AG Address before: Norway Horten Patentee before: Sensonor AS |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20061011 Termination date: 20180430 |