CN1260899A - 用于磁记录介质的含锰层 - Google Patents
用于磁记录介质的含锰层 Download PDFInfo
- Publication number
- CN1260899A CN1260899A CN98806261A CN98806261A CN1260899A CN 1260899 A CN1260899 A CN 1260899A CN 98806261 A CN98806261 A CN 98806261A CN 98806261 A CN98806261 A CN 98806261A CN 1260899 A CN1260899 A CN 1260899A
- Authority
- CN
- China
- Prior art keywords
- layer
- magnetic
- recording medium
- magnetic layer
- alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 194
- 229910052748 manganese Inorganic materials 0.000 title claims description 16
- 239000011572 manganese Substances 0.000 title description 87
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 title description 2
- 239000000758 substrate Substances 0.000 claims abstract description 73
- 239000000463 material Substances 0.000 claims abstract description 38
- 229910000531 Co alloy Inorganic materials 0.000 claims abstract description 35
- 239000013078 crystal Substances 0.000 claims abstract description 26
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 25
- 239000000956 alloy Substances 0.000 claims abstract description 25
- -1 CrV Inorganic materials 0.000 claims abstract description 14
- 229910000943 NiAl Inorganic materials 0.000 claims abstract description 13
- NPXOKRUENSOPAO-UHFFFAOYSA-N Raney nickel Chemical compound [Al].[Ni] NPXOKRUENSOPAO-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 13
- 229910015372 FeAl Inorganic materials 0.000 claims abstract description 12
- 229910000599 Cr alloy Inorganic materials 0.000 claims abstract description 11
- 229910003321 CoFe Inorganic materials 0.000 claims abstract description 7
- 229910002535 CuZn Inorganic materials 0.000 claims abstract description 7
- 229910005438 FeTi Inorganic materials 0.000 claims abstract description 7
- 229910001000 nickel titanium Inorganic materials 0.000 claims abstract description 7
- 229910001149 41xx steel Inorganic materials 0.000 claims abstract description 6
- 229910015136 FeMn Inorganic materials 0.000 claims abstract description 5
- 229910010389 TiMn Inorganic materials 0.000 claims abstract description 5
- 239000010410 layer Substances 0.000 claims description 296
- 229910019222 CoCrPt Inorganic materials 0.000 claims description 62
- 238000000151 deposition Methods 0.000 claims description 22
- 238000009792 diffusion process Methods 0.000 claims description 21
- 239000011229 interlayer Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 19
- 239000006104 solid solution Substances 0.000 claims description 15
- 239000000203 mixture Substances 0.000 claims description 10
- 229910000914 Mn alloy Inorganic materials 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 238000013500 data storage Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 230000001737 promoting effect Effects 0.000 claims 2
- 229910010169 TiCr Inorganic materials 0.000 claims 1
- 230000001965 increasing effect Effects 0.000 abstract description 6
- 230000002463 transducing effect Effects 0.000 abstract description 4
- 230000003068 static effect Effects 0.000 abstract description 3
- 229910052782 aluminium Inorganic materials 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 141
- 239000011651 chromium Substances 0.000 description 108
- 239000011521 glass Substances 0.000 description 20
- 239000010409 thin film Substances 0.000 description 11
- 230000008021 deposition Effects 0.000 description 9
- 238000010587 phase diagram Methods 0.000 description 9
- 238000002441 X-ray diffraction Methods 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 7
- 238000004627 transmission electron microscopy Methods 0.000 description 7
- 229910000684 Cobalt-chrome Inorganic materials 0.000 description 6
- 239000010952 cobalt-chrome Substances 0.000 description 6
- 230000005415 magnetization Effects 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 239000011247 coating layer Substances 0.000 description 5
- 239000000314 lubricant Substances 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 238000012546 transfer Methods 0.000 description 4
- 229910002521 CoMn Inorganic materials 0.000 description 3
- 229910018979 CoPt Inorganic materials 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- 238000004630 atomic force microscopy Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000005347 demagnetization Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 238000005204 segregation Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- ORNGPPZBMMHKPM-UHFFFAOYSA-N 1,1,1,2,2-pentafluoro-2-(1,1,2,2,2-pentafluoroethoxy)ethane Chemical compound FC(F)(F)C(F)(F)OC(F)(F)C(F)(F)F ORNGPPZBMMHKPM-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910020632 Co Mn Inorganic materials 0.000 description 1
- 229910002441 CoNi Inorganic materials 0.000 description 1
- 229910020678 Co—Mn Inorganic materials 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910017309 Mo—Mn Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000788 chromium alloy Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 238000007596 consolidation process Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 238000005324 grain boundary diffusion Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000008450 motivation Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000004663 powder metallurgy Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003319 supportive effect Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/66—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers
- G11B5/676—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers having magnetic layers separated by a nonmagnetic layer, e.g. antiferromagnetic layer, Cu layer or coupling layer
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/85—Coating a support with a magnetic layer by vapour deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/90—Magnetic feature
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
Landscapes
- Magnetic Record Carriers (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Thin Magnetic Films (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/844,835 | 1997-04-22 | ||
| US08/844,835 US5993956A (en) | 1997-04-22 | 1997-04-22 | Manganese containing layer for magnetic recording media |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1260899A true CN1260899A (zh) | 2000-07-19 |
Family
ID=25293754
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN98806261A Pending CN1260899A (zh) | 1997-04-22 | 1998-04-22 | 用于磁记录介质的含锰层 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US5993956A (enExample) |
| EP (1) | EP0978121A1 (enExample) |
| JP (1) | JP2001522504A (enExample) |
| KR (1) | KR20010020160A (enExample) |
| CN (1) | CN1260899A (enExample) |
| WO (1) | WO1998048413A1 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102646421A (zh) * | 2011-02-15 | 2012-08-22 | 昭和电工株式会社 | 热辅助磁记录介质和磁存储装置 |
| CN116921667A (zh) * | 2022-04-21 | 2023-10-24 | Tdk株式会社 | 金属磁性粉末、复合磁性体和电子部件 |
Families Citing this family (42)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6156422A (en) * | 1997-12-12 | 2000-12-05 | Seagate Technology, Inc. | High density magnetic recording medium with high Hr and low Mrt |
| US6207269B1 (en) * | 1997-12-12 | 2001-03-27 | Seagate Technology Llc | High substrate bias sputtering underlayer for longitudinal recording media |
| US6238809B1 (en) * | 1998-02-10 | 2001-05-29 | Seagate Technology Llc | Magnetic recording medium containing a Cr(Ta205) underlayer |
| US6228515B1 (en) * | 1998-02-17 | 2001-05-08 | Korea Institute Of Science And Technology | Underlayer for use in a high density magnetic recording media |
| US6432562B1 (en) * | 1998-09-25 | 2002-08-13 | Seagate Technology Llc | Magnetic recording medium with a nialru seedlayer |
| US6623873B1 (en) * | 1998-11-20 | 2003-09-23 | Hitachi, Ltd. | Magnetic recording medium and magnetic disk apparatus using the same |
| US6562488B1 (en) * | 1999-04-14 | 2003-05-13 | Seagate Technology Llc | CoCrPtTaNbB alloy for magnetic recording medium |
| JP2000348323A (ja) * | 1999-06-08 | 2000-12-15 | Fujitsu Ltd | 磁気記録媒体、磁気記録媒体の製造方法及び磁気記憶装置 |
| JP2001023142A (ja) * | 1999-07-05 | 2001-01-26 | Sony Corp | 磁気記録媒体 |
| US6432563B1 (en) | 2000-04-03 | 2002-08-13 | Carnegie Mellon University | Zinc enhanced hard disk media |
| US6790541B2 (en) * | 2000-04-12 | 2004-09-14 | Alps Electric Co., Ltd. | Exchange coupling film and electroresistive sensor using the same |
| US6740397B1 (en) * | 2000-05-24 | 2004-05-25 | Seagate Technology Llc | Subseedlayers for magnetic recording media |
| US6596419B1 (en) | 2000-09-27 | 2003-07-22 | Seagate Technology Llc | Medium with a seed layer and a B2-structured underlayer |
| US6730420B1 (en) | 2000-10-31 | 2004-05-04 | Komag, Inc. | Magnetic thin film recording media having extremely low noise and high thermal stability |
| JP3730518B2 (ja) * | 2001-01-19 | 2006-01-05 | 株式会社東芝 | 磁気記録媒体 |
| US6852430B2 (en) * | 2001-03-02 | 2005-02-08 | Hitachi Global Storage Technologies Netherlands, B.V. | Magnetic thin film media with a pre-seed layer of CrTi |
| US6593009B2 (en) | 2001-03-02 | 2003-07-15 | Hitachi Global Storage Technologies Netherlands N.V. | Magnetic thin film media with a pre-seed layer of CrTi |
| US7041394B2 (en) | 2001-03-15 | 2006-05-09 | Seagate Technology Llc | Magnetic recording media having self organized magnetic arrays |
| US7153597B2 (en) * | 2001-03-15 | 2006-12-26 | Seagate Technology Llc | Magnetic recording media having chemically modified patterned substrate to assemble self organized magnetic arrays |
| JP2003242621A (ja) * | 2002-02-18 | 2003-08-29 | Sony Corp | 磁気記録媒体 |
| WO2003083840A1 (en) * | 2002-03-29 | 2003-10-09 | Fujitsu Limited | Magnetic recording medium and magnetic storage apparatus |
| KR100641377B1 (ko) * | 2002-03-29 | 2006-10-31 | 후지쯔 가부시끼가이샤 | 자기기록매체 및 자기기억장치 |
| US20030215676A1 (en) * | 2002-05-20 | 2003-11-20 | Yoshiharu Kashiwakura | Magnetic recording medium |
| US6677052B2 (en) * | 2002-05-29 | 2004-01-13 | Hitachi Global Storage Technologies | Preseed layer for a magnetic recording disk |
| WO2004027762A1 (en) * | 2002-09-06 | 2004-04-01 | Fujitsu Limited | Magnetic recording medium and magnetic storage apparatus |
| JP2004234718A (ja) * | 2003-01-28 | 2004-08-19 | Fuji Electric Device Technology Co Ltd | 磁気記録媒体 |
| US7282278B1 (en) * | 2003-07-02 | 2007-10-16 | Seagate Technology Llc | Tilted recording media with L10 magnetic layer |
| US7088562B2 (en) * | 2003-07-30 | 2006-08-08 | Hitachi Global Storage Technologies Netherlands B.V. | Electrical lead structures having crystalline structures that match underlying magnetic hard bias layers for magnetoresistive sensors |
| US7466522B2 (en) * | 2003-07-30 | 2008-12-16 | Hitachi Global Storage Technologies Netherlands, B.V. | Electrical lead structures having crystalline structures that match underlying magnetic hard bias layers for magnetoresistive sensors |
| US6858331B1 (en) | 2003-08-29 | 2005-02-22 | Hitachi Global Storage Technologies Netherlands, B.V. | Magnetic thin film media with a bi-layer structure of CrTi/Nip |
| WO2006019063A1 (en) * | 2004-08-16 | 2006-02-23 | Showa Denko K.K. | Magnetic recording medium and magnetic recording and reproducing device |
| JP2006085871A (ja) * | 2004-09-17 | 2006-03-30 | Ken Takahashi | 垂直磁気記録媒体の製造方法及び垂直磁気記録媒体並びに磁気記録再生装置 |
| US7300713B2 (en) * | 2004-10-29 | 2007-11-27 | Hitachi Global Storage Technologies Netherlands B.V. | Magnetic thin film media with an underlayer of CrMoZr, CrMoNb or CrMoMn |
| US20070122660A1 (en) * | 2005-11-28 | 2007-05-31 | Seagate Technology Llc | Magnetic recording media with manganese-containing underlayer |
| US20070264339A1 (en) * | 2006-05-12 | 2007-11-15 | Ap Pharma, Inc. | Base-stabilized polyorthoester formulations |
| US7670694B2 (en) * | 2006-12-22 | 2010-03-02 | Hitachi Global Storage Technologies Netherlands B.V. | Media for recording devices |
| US20120141667A1 (en) * | 2010-07-16 | 2012-06-07 | Applied Materials, Inc. | Methods for forming barrier/seed layers for copper interconnect structures |
| CN102373427A (zh) * | 2010-08-18 | 2012-03-14 | 鸿富锦精密工业（深圳）有限公司 | 铝合金表面防腐处理方法及其制品 |
| JP6060484B2 (ja) | 2012-01-19 | 2017-01-18 | 富士電機株式会社 | 磁気記録媒体の製造方法 |
| JP6199618B2 (ja) * | 2013-04-12 | 2017-09-20 | 昭和電工株式会社 | 磁気記録媒体、磁気記憶装置 |
| CN105698929B (zh) * | 2016-02-29 | 2019-06-28 | 苏州宏策光电科技有限公司 | 氮气反应溅射制备CoCr/Sb极紫外多层膜人工晶体单色器及制作方法 |
| CN105698928B (zh) * | 2016-02-29 | 2018-04-17 | 苏州宏策光电科技有限公司 | 氮气反应溅射制备CoCr/Ti极紫外多层膜人工晶体单色器及制作方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2250460C3 (de) * | 1972-10-14 | 1981-09-10 | Ibm Deutschland Gmbh, 7000 Stuttgart | Magnetischer Aufzeichnungsträger |
| JPS62164205A (ja) * | 1986-01-13 | 1987-07-20 | Hitachi Metals Ltd | 磁気記録媒体 |
| US4652499A (en) * | 1986-04-29 | 1987-03-24 | International Business Machines | Magnetic recording medium with a chromium alloy underlayer and a cobalt-based magnetic layer |
| JP2513893B2 (ja) * | 1989-04-26 | 1996-07-03 | 日立金属株式会社 | 磁気記録媒体 |
| US5162158A (en) * | 1989-07-24 | 1992-11-10 | Magnetic Peripherals Inc. | Low noise magnetic thin film longitudinal media |
| US5605733A (en) * | 1992-01-22 | 1997-02-25 | Hitachi, Ltd. | Magnetic recording medium, method for its production, and system for its use |
| US5456978A (en) * | 1993-08-03 | 1995-10-10 | Hmt Technology Corporation | Thin-film recording medium with thin metal sublayer |
| US5693426A (en) * | 1994-09-29 | 1997-12-02 | Carnegie Mellon University | Magnetic recording medium with B2 structured underlayer and a cobalt-based magnetic layer |
| US5506017A (en) * | 1995-06-07 | 1996-04-09 | Komag Incorporated | Method for texturing magnetic media |
-
1997
- 1997-04-22 US US08/844,835 patent/US5993956A/en not_active Expired - Lifetime
-
1998
- 1998-04-22 CN CN98806261A patent/CN1260899A/zh active Pending
- 1998-04-22 EP EP98918504A patent/EP0978121A1/en not_active Withdrawn
- 1998-04-22 KR KR1019997009722A patent/KR20010020160A/ko not_active Withdrawn
- 1998-04-22 JP JP54626198A patent/JP2001522504A/ja not_active Ceased
- 1998-04-22 WO PCT/US1998/007984 patent/WO1998048413A1/en not_active Ceased
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102646421A (zh) * | 2011-02-15 | 2012-08-22 | 昭和电工株式会社 | 热辅助磁记录介质和磁存储装置 |
| CN102646421B (zh) * | 2011-02-15 | 2014-11-12 | 昭和电工株式会社 | 热辅助磁记录介质和磁存储装置 |
| CN116921667A (zh) * | 2022-04-21 | 2023-10-24 | Tdk株式会社 | 金属磁性粉末、复合磁性体和电子部件 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2001522504A (ja) | 2001-11-13 |
| EP0978121A1 (en) | 2000-02-09 |
| KR20010020160A (ko) | 2001-03-15 |
| WO1998048413A1 (en) | 1998-10-29 |
| US5993956A (en) | 1999-11-30 |
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