CN1227519A - 用于修整半导体晶片的磨料结构 - Google Patents
用于修整半导体晶片的磨料结构 Download PDFInfo
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Abstract
公开一种用来修整工件(如半导体晶片)表面的磨料结构。所述磨料结构包含:三维、有纹理、粘固的磨料构件;至少一种弹性构件,它一般与粘固的磨料构件共同扩展;和至少一种刚性构件,它一般与弹性构件和粘固的磨料构件共同扩展,并位于这两者之间,所述刚性构件的杨氏模量大于弹性构件的杨氏模量。
Description
发明的背景
本发明涉及用来修整半导体晶片暴露表面的磨料结构,该磨料结构含有磨料构件、刚性构件和弹性构件。
在集成电路的制造过程中,半导体晶片一般经过许多加工步骤,包括淀积、形成图案和蚀刻步骤。至于如何制造半导体晶片的其它细节可参见Tonshoff,H.K.;Scheiden,W.V.;Inasaki,I.;Koning.W;Spur,G发表在Annals of the InternationalInstitution for Production Engineering Research,39/2/1990卷,第621-635页中题为“硅的研磨加工(Abrasive Machining of Silicon)”一文。在加工的每一步骤中,常需要达到预定的表面“平整度”和/或“均匀度”水平。也需要最大限度地减少坑和划痕之类的表面缺陷。这些表面不规整可能影响最终的有图案半导体器件的性能。
用于减少表面不规整度的一种可接受的方法是用抛光垫来施用含有许多松散磨料颗粒的浆料来处理晶片表面。与浆料一起使用的抛光垫的一个例子如美国专利No.5,287,663(Pierce等)中所述。该抛光垫包括抛光层、邻近抛光层的刚性层和邻近刚性层的弹性层。抛光层是如聚氨酯或聚氨酯的复合物这些材料。
发明的概述
本发明提供一种用来修整工件表面的磨料结构(abrasive construction)。该磨料结构包含:三维、有纹理(textured)、粘固(fixed)的磨料构件(element);至少一种弹性构件,它一般与粘固的磨料构件共同扩展(coextensive);和至少一种刚性构件,它一般与弹性构件和粘固的磨料构件共同扩展,并位于这两者之间,所述刚性构件的杨氏模量大于弹性构件的杨氏模量。刚性构件、弹性构件和磨料构件结合得到磨料结构,在表面修整过程中,该磨料结构与工件表面的整体形态大体上整合,而与工件表面的局部形态基本上不整合。
磨料结构的另一个实施方案包含:三维、有纹理、粘固的磨料制品,该制品包含背衬和基垫(subpad),所述背衬的上面有磨料涂层,所述基垫一般与粘固磨料制品的背衬共同扩展。该基垫包含至少一种弹性构件和至少一种刚性构件。所述弹性构件的杨氏模量小于约100MPa,压缩时残余应力至少约为60%;所述的刚性构件一般与弹性构件和粘固磨料制品的背衬共同扩展,并位于这两者之间。所述刚性构件的杨氏模量大于弹性构件的杨氏模量,至少约为100MPa。
本发明磨料结构的另一个实施方案包含:三维、有纹理、粘固的磨料制品,该制品包含背衬和基垫,所述背衬的上面有磨料涂层,所述基垫一般与粘固磨料制品的背衬共同扩展,且包含至少一种弹性构件和至少一种刚性构件。所述弹性构件的杨氏模量小于约100MPa,压缩时残余应力至少约为60%,厚度约0.5-5毫米;所述的刚性构件一般与弹性构件和粘固磨料制品的背衬共同扩展,并位于这两者之间。所述刚性构件的杨氏模量大于弹性构件的杨氏模量,至少约为100MPa,其厚度约为0.075-1.5毫米。
在整个说明书中使用如下定义:
“表面修整”是指晶片表面的处理工艺,如抛光和平整(planarizing);
“刚性构件”指模量高于弹性构件且弯曲会变形的构件;
“弹性构件”指支承刚性构件,压缩时会弹性形变的构件;
“模量”指材料的弹性模量或杨氏模量;对于弹性材料,用动态压缩试验在材料的厚度方向测量模量值,而对于刚性材料,用静态拉伸试验在材料平面上测量模量值;
“粘固(的)磨料构件”是指整体磨料构件,如磨料制品,它除了在修整工件表面的过程(如平整化)中产生磨料颗粒以外基本上不含未粘结的磨料颗粒;
“三维”,当用来描述粘固磨料构件时,是指这样的粘固磨料构件(尤其是粘固磨料制品),在其厚度的至少一部分上分布有许多磨料颗粒,以使在平整时除去表面上的某些颗粒,暴露出其它具有平整功能的磨料颗粒。
“有纹理”,当用来描述粘固磨料构件时,是指具有凸起部分和凹进部分的粘固磨料构件(尤其是粘固磨料制品),其中至少凸起部分含有磨料颗粒和粘结剂;
“磨料复合体”是指能共同地提供含磨料颗粒和粘结剂的有纹理、三维磨料构件的许多成形物体之一;所述的磨料颗粒的形式可以是磨料聚集体;
“精确成形的磨料复合体”是指从模具中取出后具有并保持与模腔相反模塑形状的磨料复合体;较好的是在使用磨料制品之前,磨料复合体基本上没有磨料颗粒突出于模塑形状的暴露表面,如美国专利No.5,152,917(Pieper等)所述。
附图的简要说明
图1是附着于三维、有纹理、粘固的磨料构件的本发明基垫的一部分的剖面图。
发明的详细描述
本发明提供了一种用来修整工件(如半导体晶片)的暴露表面的磨料结构。该磨料结构包含三维、有纹理、粘固的磨料构件、弹性构件和介于弹性构件和粘固磨料构件之间的刚性构件。这些构件大体上互相共同扩展。较好的粘固磨料构件是粘固磨料制品。8月8日提交的美国专利申请号08/694,014中说明了合适的三维、有纹理、粘固的磨料制品,它一般包含其上有磨料涂层的背衬,该磨料涂层包含预定图案形式的许多磨料颗粒和粘结剂,还说明了在半导体晶片加工中使用该磨料制品的方法。
本发明的磨料结构包含至少一种较高模量的刚性构件和至少一种较低模量的弹性构件。一般说来,弹性构件的模量(即材料厚度方向的杨氏模量)比刚性构件的模量(即材料平面的杨氏模量)低至少约25%(较好的至少约50%)。较好的是,刚性构件的杨氏模量至少约为100MPa,弹性构件的杨氏模量小于约100MPa。更好的是,弹性构件的杨氏模量小于约50MPa。
刚性构件和弹性构件形成了磨料构件的基垫。如图1所示,基垫10包括至少一种刚性构件12和至少一种弹性构件14,基垫10附着于粘固磨料制品16。刚性构件12介于弹性构件14和粘固磨料制品16之间,粘固磨料制品16具有表面17与工件接触。因此,在本发明的磨料结构中,刚性构件12和弹性构件14平行于粘固磨料制品16并一般与其共同延伸,以使得三个构件能大体上共同扩展。虽然图1中未示出,但是弹性构件14的表面18基本上固定在半导体晶片修整机器的台板上,而粘固磨料制品的表面17接触半导体晶片。
如图1所示,本实施方案的粘固磨料制品16包含背衬22,该背衬的一个表面上粘合有磨料涂层24,该涂层包含含有分散在粘结剂30中的磨料颗粒28的多个精确成形的磨料复合体26的预定图案。背衬上的磨料涂层24可以是连续或不连续的。然而,在某些实施方案中,粘固磨料制品不需要背衬。而且,磨料结构的刚性构件至少一部分可以用粘固磨料制品的背衬来提供。
虽然图1示出了具有精确成形的磨料复合体的有纹理、三维、粘固磨料构件,但是本发明的磨料组合物并不限于精确成形的复合体。也就是说,其它的有纹理、三维、粘固的磨料构件也可以,如1996年8月8日提交的美国专利申请号08/694,014中所述。
在磨料结构的各组成部分之间可以有粘合剂中间层或者其它连接件(attachment means)。例如,如图1所示,粘合剂层20介于刚性构件12和粘固磨料制品16的背衬22之间。虽然图1中未示出,在刚性构件12和弹性构件14之间,以及在弹性构件14的表面18上也可以有粘合剂层。
在使用过程中,粘固磨料制品16的表面17与工件(如半导体晶片)接触,以修整工件表面使其比处理之前的表面更平整和/或更均匀和/或更少粗糙。基垫的刚性构件和弹性构件的底层结合提供了这样一种磨料结构,它在表面修整过程中与工件表面的整体形态(如半导体晶片的整个表面)大体整合,而与工件表面的局部形态(如半导体晶片表面邻接凸起部分(features)间的空隙)基本上不整合。结果,本发明的磨料结构能修整工件表面以得到所需水平的平整度、均匀度和/或粗糙度。所需平整度、均匀度和/或粗糙度的具体程度随各个晶片及其用途,以及晶片可能经历的任何后续加工步骤的性质而异。
虽然本发明的磨料结构特别适用于加工过的半导体晶片(即上面有电路图形的半导体晶片或包覆的无图案晶片),它们也可以用于未经加工的晶片或坯料(硅)晶片。因此,本发明的磨料结构可以用来抛光或平整半导体晶片。
弹性构件的主要目的是使得磨料结构与工件表面的整体形态大体整合,同时保持在工件上的均匀压力。例如,半导体晶片的总体形状是较大的波浪形或者其厚度是变化的,则磨料结构应该基本上与之匹配。需要磨料结构和工件的整体形态大体整合以在修整工件表面后得到所需的均匀性程度。因为弹性构件在表面修整过程中经历压缩,所以该弹性构件在厚度方向压缩时的回弹性是得到所需均匀性程度的一个重要的特性。弹性构件的回弹性(即压缩刚性和弹性回跳)与材料在厚度方向的模量有关,还受到其厚度的影响。
刚性构件的主要目的是为了限制磨料结构与工件表面的局部形态大体整合的能力。例如,半导体晶片一般具有数个邻接凸起部分,这些凸起部分的高度相同或不同,它们之间有凹谷部分,磨料结构不应该与这些形态大体整合。需要减少磨料结构对工件局部形态的整合度以得到所需程度的工件平整度(如避免表面凹陷)。刚性构件的弯曲劲度(即抗弯曲变形能力)是达到以上目的的重要特性。刚性构件的弯曲劲度与材料的平面内模量直接有关,还受到其厚度的影响。例如,对于均匀的材料而言,弯曲劲度与材料的杨氏模量乘以材料厚度的立方成正比。
磨料结构的刚性构件和弹性构件一般是分开的不同材料的层。每个部分一般是一层材料;然而每个构件可以包括多层相同或不同的材料,只要多层构件的机械性能是所需用途可接受的即可。例如,刚性构件可以包括多层刚性材料和弹性材料,安置这些材料层使之得到所需的弯曲劲度。同样地,弹性构件可包括多层弹性材料和刚性材料,只要整个层压构件具有足够的回弹性。
也有这样的想法,弹性构件和弹性构件可以由具有模量梯度(a gradation ofmodulus)的材料制得。例如,可以用具有孔结构梯度或交联密度梯度的泡沫材料来起到弹性构件的作用,所述泡沫材料在其厚度方向刚性程度减小。另一个例子是一片刚性材料,其厚度方向上存在填料梯度,以改变其劲度。最后,设计成沿其厚度方向有模量梯度的材料可以用来有效地起到刚性构件和弹性构件的作用。通过这一方法,刚性构件和弹性构件是一个一层材料的整体。
用于刚性构件和弹性构件的材料的选择较好的是使得磨料结构能在工件表面均匀地除去材料(即均匀度),并且在有图案晶片上得到良好的平整度,这包括平面度(flatness)和表面凹陷(dishing),平面度用总突出指示值(Total IndicatedRunout,(TIR))来度量,表面凹陷用平整比(planarization ratio)来度量。具体的平整度值随各个晶片及其用途,以及晶片可能经历的后续加工步骤的性质而异。
平面度的量TIR是半导体晶片工业中熟知的术语。在晶片的技术规范领域中,它是晶片平面度的度量。TlR值一般是根据半导体晶片的技术规范领域中的方法,用如TENCOR P-2长扫描表面光度仪(购自Tencor of Mountain View,CA)这样的仪器测得的。可将其看成是两个假想的平行平面之间的距离,其中一个平面与半导体晶片表面的最高点相交或接触,另一个平面与半导体晶片表面的最低点相交或接触。在平整之前,该距离(十次TIR读数的平均值)一般大于约0.5毫米,有时大于约0.8毫米或甚至大于约1-2毫米。平整后,该距离较好的是小于约5000埃,更好的是不超过约1500埃。
正如本领域中熟知的,表面凹陷的量用平整比来表示,它是把从高区域(一般是需要去除的区域)除去的材料量与从低区域(一般不需要去除)除去的材料量进行比较得到的。两种仪器可用来测量平整比。一种是表面光度仪,它可以在平整之前和之后用来测量TIR。一种是光学干涉/吸收仪,它例如在平整之前和之后测量金属相互连接之间的区域中氧化物层的厚度。如此测定从每个区域除去的材料量,计算得到平整比。平整比是从高区域(一般是需要去除的区域)除去的材料量加上从低区域(一般是不需要去除的区域)除去的材料量,再除以从高区域除去的材料量所得的比值。一般来说,平整比应该小于2。平整比为1通常是较好的,因为这表明实际上没有表面凹陷。
在工件表面上除去材料的均匀度通常与除去速率或磨削速率一同报道,用下式计算:
均匀度%=[(si 2+sf 2)1/2(hi-hf)]×100其中,si是初始材料厚度的标准偏差,sf是最终材料厚度的标准偏差;hi是初始的材料厚度;hf是最终的材料厚度。均匀度较好低于约15%,更好低于约10%,最好是低于约5%。
平均磨削速率与用磨料结构处理的具体晶片表面的组成和形态有关。在晶片表面是含金属氧化物表面(如含二氧化硅的表面)的情况下,磨削速率一般应该至少约为100埃/分钟,较好的至少约500埃/分钟,更好的至少约1000埃/分钟,最好至少约1500埃/分钟。在一些情况下,需要该磨削速率高达至少约2000埃/分钟,甚至是3000或4000埃/分钟。当总体上需要高磨削速率时,应选择磨削速率使其不会损害所需的晶片表面形态。
刚性构件和弹性构件的材料的选择随以下这些因素而定:工件表面和粘固磨料构件的组成,工件表面的形状和初始平面度,用于修整表面(如平整表面)的器具的类型,修整工艺中所用的压力等。只要存在至少一种刚性构件和至少一种弹性构件,并且至少一种刚性构件一般与粘固磨料构件和弹性构件共同扩展,并位于这两者之间。那么本发明的磨料结构可用于各种各样的半导体晶片修整用途。
适宜用在基垫中的材料可以用例如ASTM提出的标准试验方法进行表征。对刚性构件进行静态拉伸试验可用来测量在该材料平面上的杨氏模量(通常称为弹性模量)。可以用ASTM E345-93(金属箔拉伸试验的标准试验方法)来测量金属的杨氏模量。可以用ASTM D638-84(塑料拉伸性能的标准试验方法)和ASTMD882-88(薄塑料片的标准拉伸性能)来测量有机聚合物(如塑料或增强塑料)的杨氏模量。对于包含多层材料的层压构件,整个构件的杨氏模量(即层压件模量)可以用适合于最高模量材料的试验来进行测量。较好的是,刚性材料(或整个刚性构件本身)的杨氏模量至少约100MPa。此处刚性构件的杨氏模量是在室温下(20-25℃)用合适的ASTM试验在材料的两个主表面所限定的平面内测得的。
对弹性材料进行动态压缩试验可用来测量该材料厚度方向的杨氏模量(通常称为储能模量或弹性模量)。于此,对于弹性构件,无论它是单层还是包含多层材料的层压构件,均使用ASTM D5024-94(测量塑料压缩时动态机械性能的标准试验方法)。较好的是,弹性材料(或整个弹性构件本身)的杨氏模量小于约100MPa,更好的小于约50MPa。此处弹性构件的杨氏模量是在20℃、0.1Hz、预加负载为34.5kPa的条件下用ASTM D5024-94在材料的厚度方向测得。
合适的弹性材料还可以通过另外评定其应力松弛来加以选择。应力松弛是通过使材料变形并保持该变形状态,同时测量保持这种变形所需的力或应力来加以评定的。合适的弹性材料(或整个弹性构件)较好的是在120秒后保留最初施加应力的至少约60%(以至少约70%更佳)。这在本文(包括权利要求书)中称为“残余应力(remaining stress)”,它如下测得:在室温(20-25℃)下先以25.4毫米/分钟的速率将材料样品的厚度压缩不小于0.5毫米,直至达到83kPa的初始应力,在2分钟后测量残余应力。
磨料结构的刚性构件和弹性构件可以有多种厚度,这随材料的杨氏模量而异。选择每一部分的厚度要使得能够得到所需的平整度、均匀度和粗糙度。例如,模量为100MPa的刚性构件的合适厚度约为1.5毫米。然而,一般来说,刚性构件可以厚约0.075-1.5毫米,随其模量而异。通常随材料的杨氏模量增加,所要求的材料厚度会降低。模量低于约100MPa的弹性构件的合适厚度通常约为0.5-5毫米,较好约1.25-3毫米。
刚性构件的选择一般是使得当在磨料结构上施加约80kPa的压力时,该磨料结构能够与工件表面凸起部分之间空隙间的局部形态基本上不整合,所述空隙的宽度至少约1.2毫米,较好至少约1.5毫米,更好至少约1.7毫米,最好至少约2.0毫米。这是指当空隙宽度小于规定值时,在该具体的压力下磨料构件与局部形态基本上不整合。通常可以使用较高和较低的压力而基本上不整合,例如使用晶片平整工艺中常用的压力。本发明的一个明显优点是能够跨越较大的空隙宽度,这通常是很难实现的。
用于磨料结构的刚性材料可以选自各种材料,如有机聚合物、无机聚合物、陶瓷、金属、有机聚合物的复合材料,以及它们的组合。合适的有机聚合物可以是热塑性或热固性的。合适的热塑性材料包括,但不限于聚碳酸酯类、聚酯类、聚氨酯类、聚苯乙烯类、聚烯烃类、聚全氟烯烃类、聚氯乙烯类,以及它们的共聚物。合适的热固性聚合物包括,但不限于环氧类、聚酰亚胺类、聚酯类,以及它们的共聚物。此处所用的共聚物包括两种或多种不同单体的聚合物(如三元共聚物、四元共聚物等)。
有机聚合物可以是或不是增强型的。增强可以是纤维或粒状材料的形式。适合用作增强的材料包括,但不限于有机或无机的纤维(连续的或短纤维)、硅酸盐(如云母或滑石)、二氧化硅基材料(如砂和石英)、金属颗粒、玻璃、金属氧化物和碳酸钙。
金属片也可以用作刚性构件。通常,因为金属的杨氏模量较高(如高于约50GPa),所以使用非常薄的片材(通常约0.075-0.25毫米)。合适的金属包括,但不限于铝、不锈钢和铜。
可用于本发明磨料结构的具体材料包括,但不限于聚对苯二甲酸乙二醇酯、聚碳酸酯、玻璃纤维增强的环氧板(如购自Minnesota Plastics,Minneapolis,MN的FR4)、铝、不锈钢和IC1000(购自Rodel,Inc.,Newark,DE)。
用于磨料结构的弹性材料可以选自多种材料。弹性材料通常是有机聚合物,它可以是热塑性或热固性的,可以是或不是本身有弹性的。常见可用的弹性材料是那些能发泡或吹制得到多孔有机结构的有机聚合物,它们通常被称作泡沫材料(foams)。这些泡沫材料可以由天然橡胶或合成橡胶或其它热塑性弹性体制得,所述热塑性弹性体例如聚烯烃类、聚酯类、聚酰胺类、聚氨酯类以及它们的共聚物。合适的合成热塑性弹性体包括,但不限于氯丁橡胶、二元乙丙橡胶、丁基橡胶、聚丁二烯、聚异戊二烯、EPDM聚合物、聚氯乙烯类、聚氯丁二烯类或苯乙烯/丁二烯共聚物。可用的弹性材料的一个具体例子是泡沫材料形式的聚乙烯和乙烯-乙酸乙酯(ethyl vinyl acetate)的共聚物。
弹性材料还可以有其它结构,如果可以得到合适的机械性能(如杨氏模量和压缩时残余应力)的话。例如可以使用用于常规抛光垫的经聚氨酯浸渍的毡基材料。弹性材料还可以是非织造或织造纤维毡片,如聚烯烃、聚酯或聚酰胺纤维,它们都经过树脂(如聚氨酯)的浸渍。纤维毡片中的纤维可以是长度有限的(即短纤维)或者是基本上连续的。
可用于本发明磨料结构的具体弹性材料包括,但不限于商品名为CELLFLEX1200、CELLFLEX1800、CELLFLEX2200、CELLFLEX2200XF的乙烯-醋酸乙烯酯共聚物泡沫材料(Dertex Corp.,Lawrence,MA),3M SCOTCH品牌的CUSHION-MOUNT Plate Mounting Tape949(一种来自3M Company,St.Paul.MN的双面涂覆的高密度弹性泡沫材料胶带),EMR1025聚乙烯泡沫材料(购自Sentinel Products Hyannis,NJ),HD200聚氨酯泡沫材料(购自Illbruck,Inc.,Minneapolis,MN),MC8000和MC8000EVA泡沫材料(购自Sentinel Products),SUBA IV经浸渍的非织造织物(购自Rodel,Inc.,Newark,DE)。
令人惊奇的是,已经发现市售的用于浆液抛光(slurry polishing)操作的含刚性构件和弹性构件的抛光垫或其部分也可以用作本发明的基垫。这一发现令人惊奇之处在于浆液垫是设计成将松散的磨料颗粒传送到晶片表面上的,并不可能预见到该垫能够用作粘固磨料构件的有效基垫。这些垫子的例子包括市售商品名为IC1400、IC2000或IC1000-SUBA IV的多层垫子(购自Rodel,Inc.,Newark,DE)。
本发明的磨料结构还可以包含各组分之间(如刚性构件和弹性构件之间,刚性构件和磨料构件之间)的连接件。例如,图1所示结构如下制备:将一片刚性材料和一片弹性材料层压在一起。这两种构件的层压可以通过多种普遍已知的粘结方法中的任一种来实现,如热熔粘合剂、压敏粘合剂、胶合剂、粘结层、粘结剂、机械紧固元件、超声焊接、热粘结、微波活化粘结等。此外,可以通过共挤出将基垫的刚性部分和弹性部分结合起来。
一般说来,刚性构件和弹性构件的层压可容易地通过使用压敏型或热熔型的粘合剂来实现。合适的压敏粘合剂可以是多种通用的压敏粘合剂,包括,但不限于那些以天然橡胶、(甲基)丙烯酸类聚合物或共聚物、热塑性橡胶的AB或ABA型嵌段共聚物(如购自Shell Chemical Co.,Houston,TX商品名为KRATON的苯乙烯/丁二烯或苯乙烯/异戊二烯嵌段共聚物)或聚烯烃类为基的粘合剂。合适的热熔粘合剂包括,但不限于多种通用的热熔粘合剂,如那些以聚酯、乙烯-醋酸乙烯酯共聚物(EVA)、聚酰胺类、环氧等为基的粘合剂。对粘合剂的主要要求是它具有足以使得刚性构件和弹性构件在使用时保持应有位置的粘结强度和抗剥离力,能够在使用状态下抗剪切,并且能够在使用状态下抗化学降解。
可以用以上刚刚概述的相同方式将粘固磨料构件粘结到磨料结构的刚性部分上,所述方式即粘合剂、共挤出、热粘结、机械紧固元件等。然而,粘固磨料构件不必与磨料结构的刚性部分粘结,但是要保持在紧邻刚性部分的位置并且与它共同扩展。在这种情况下,需要某些用于将粘固磨料在使用时保持就位的机械器件,如定位销、扣环、张紧器、真空装置等。
将此处描述的磨料结构放在机器台板上以用来修整例如硅晶片的表面。该磨料结构可以通过粘合剂或机械器件(如定位销、扣环、张紧器、真空装置等)加以连接。
本发明的磨料结构可以用在多种机器上以平整半导体晶片,正如本领域中所熟知的与抛光垫和松散磨料浆液一起使用。合适的市售机器的一个例子是购自IPEC/WESTECH of Phoenix,AZ的化学机械平整(Chemical MechanicalPlanarization,CMP)机器。
这些机器一般包括具有晶片夹持器的头组件,它由用来夹持半导体晶片的扣环和晶片载垫组成。通常,半导体晶片和磨料结构沿相同方向旋转为宜。晶片夹持器可以圆周方式、螺旋方式、椭圆方式、不均匀方式或不规则运动方式进行旋转。晶片夹持器的旋转速度随具体设备、平整条件、磨料制品和所需平整标准而异。然而一般来说,晶片夹持器的转速约为2-1000转/分钟(rpm)。
本发明的磨料结构直径一般约10-200厘米,较好的约20-150厘米,更好的约25-100厘米。它也可以旋转,其转速一般约5-10,000rpm,较好的约10-1000rpm,更好的约10-250rpm。
利用本发明磨料结构的表面修整方法一般使用约6.9-138kPa的压力。
在不偏离本发明范围和精神的情况下对其做出各种修改和变化是本领域技术人员显而易见的。应该理解,本发明不受本文所列的说明性实施方案的不恰当限制。
实施例
试验方法
杨氏模量(拉伸模量)-试验A
本发明所用刚性塑料组分材料的杨氏模量是按照ASTM D638-84(塑料拉伸性能的标准试验方法)和ASTM D-882-88(薄塑料片材的标准拉伸性能)用静态拉伸试验测得的。金属的杨氏模量大体上是按照ASTM E345-93(金属箔拉伸试验的标准试验方法)测得的,不同的是用10.2厘米的测量长度(gage length)代替规定的12.7厘米。
动态压缩-试验B
本发明所用弹性组分材料的杨氏模量基本上按照ASTM D5024-94(测量塑料压缩时动态机械性能的标准试验方法)进行动态机械试验来测得的。所用仪器是Rheometrics,Inc.,Piscataway,NJ制造的流变性固体分析仪(Rheometrics SolidsAnalyzer,RSA)。在样品上施加34.5kPa的标称平均压缩应力,然后将小量的周期性负载叠加到静态负载上以确定动态响应。等温频率在20℃和40℃下、0.015Hz至15Hz之间进行扫描。
压缩的应力松弛试验-试验C
根据ASTM E328-86(对材料或结构进行应力松弛试验的方法)测量应力松弛。将圆形的试样(直径为20.32毫米)放在两块按ASTM E328-86规定的直径为25.4毫米的平板之间,在这些平板上预加25克的负载以确保上面平板与样品接触。然后上面平板以25.4毫米/分钟的速率朝固定的下面平板移动,直至试样上的负载增加至2730克。当达到规定的负载时,停止移动上面平板,在其后120秒内记录样品的应力松弛。
材料
在以下实施例中使用了下列材料:
表1
刚性组分
材料 | 供应商 | 待测样品厚度(毫米) | E(MPa)试验A |
聚碳酸酯 | Minnesota Plastics Minneapolis,MN或 | ||
Cadillac Plastics Minneapolis,MN | Minneapolis MN | 0.51 | |
增强的环氧FR4 | Minnesota Plastics Minneapolis,MN | 0.51 | 16,000 |
铝 | All Foils,Inc.Brooklyn Heights,OH | N.S. | 72,000 |
IC1000 | Rodel,Inc.Newark,DE | 1.26 | 315 |
302不锈钢 | Teledyne Rodney Earth City,MO | N.S. | 193,000 |
*文献值
N.S.=未说明
表2
弹性组分
材料 | 说明 | 供应商 | 待测样品厚度(毫米) | E′(MPa)于0.1Hz/10Hz试验B | 应力残余%试验C |
CELLFLEX1200 | 乙烯-醋酸乙烯酯共聚物泡沫材料 | DertexCorporationLawrence,MA | 3.60 | 2.3/3.4 | 74.52 |
CELLFLEX1800 | ″ | ″ | 3.60 | 5.0/6.0 | 80.40 |
CELLFLEX2200XF | ″ | ″ | 3.68 | 8.0/1.2 | 87.10 |
HD200 | 聚氨酯泡沫材料 | Illbruck.Inc.Minneapolis,MN | 2.30 | 18/4.5 | 83.74 |
SUBA IV | 经浸渍的非织造织物 | Rodel,Inc.,Newark,DE | 1.32 | 3.9/6.4 | 70.55 |
用来制备本发明磨料结构的粘合剂包括442PC(市售SCOTCH品牌双面胶带)、9482PC(市售SCOTCH品牌粘合剂转移胶带)和7961PC(市售SCOTCH品牌Double Coated Membrane Switch Spacer)。所有这些粘合剂均来自3M Company,St.Paul,MN。
实施例1
将聚丙烯树脂浇注在具有由多个邻接的截顶4面棱锥体组成的铸件表面的金属母模上,制得聚丙烯生产模具。所得生产模具含有截顶棱锥形状的空腔。每个截顶棱锥的高度约80毫米,底边长约178毫米,顶边长约51毫米。空腔排列在方形平面内,间距为每厘米约50个空腔。
从卷绕机上展开聚丙烯生产模具,在室温下用真空缝形模头涂布机将磨料浆液(下述)涂布入生产模具的空腔内。将一块76毫米厚、一面底涂有乙烯/丙烯酸共聚物的聚对苯二甲酸乙二醇酯膜背衬(PPF)与涂有磨料浆液的生产模具接触,使磨料浆液润湿背衬的经底涂表面。通过紫外线透射PPF背衬进入磨料浆液来固化该磨料浆液。可以连续地使用两种不同的紫外灯来实现固化。第一种紫外灯是配有″V″灯泡、在236.2瓦特/厘米下工作的Fusion System紫外灯。第二种是配有中压汞灯泡、在157.5瓦特厘米下工作的ATEK紫外灯。从经固化的磨料复合体/背衬上取下生产模具。这一过程是在约3.0-7.6米/分钟之间操作的连续过程。
磨料浆液组成如下:三丙烯酸三甲醇丙烷酯(trimethanolpropane triacrylate)(10份,TMPTA,购自Sartomer Co.,Inc.,Exton,PA,牌号为″Sartomer351″)、二丙烯酸已二醇酯(30份,HDDA,购自Sartomer Co.,Inc.牌号为″Sartomer238″)、邻苯二甲酸烷基苄酯增塑剂(60份,PP,购自Monsanto Co.,St.Louis,MO,牌号为″SANTICIZER278″)、三异硬脂酰基钛酸异丙酯偶合剂(6.6份,CA3,购自Kenrich Petrochemicals Inc.,Bayonne NJ,牌号为″KR-TTS″)、2,4,6-三甲基苯甲酰基-二苯基-氧化膦(2,4,6-trimethylbenzoyl-diphenyl-phosphine oxide)光引发剂(93.2份,PH7,购自BASF,Charlotte,NC,牌号为″Lucirin TPO″)、氧化铈(165.9份,CEO1,平均粒度为0.5毫米,经三异硬脂酰基钛酸异丙酯偶合剂处理,购自Rhone Poulenc,Shelton,CT)、碳酸钙(80.93份,CACO3,平均粒度为4.6毫米,购自Pfizer Speciality Minerals,New York,NY,牌号为″USP-EX-HEAVY″)、碳酸钙(7.44份,CACO2,平均粒度为2.6毫米,购自Pfizer Speciality Minerals,牌号为″USP-MEDIUM″)和碳酸钙(1.85份,CACO4,平均粒度为0.07毫米,购自PfizerSpeciality Minerals,牌号为″MULTIFLEX-MM″)。混合TMPTA、HDDA、PP、CA3、PH7和PH1的混合物,得到均匀的共混物。将CEO1逐渐加入共混物中,接着逐渐加入CACO2、CACO3和CACO4,搅拌所得混合物直至得到均匀的共混物。
将上述粘固磨料制品与具有剥离衬垫的双面涂覆的压敏胶粘带(442PC)进行层压,使用钢制手压辊(2.05千克,8.2厘米直径)辊压20次。除去剥离衬垫,随后将粘固磨料制品与IC1000-SUBAIV浆液抛光垫(购自Rodel Inc.)进行层压,使用钢制手压辊辊压20次。然后将该层压制品转变成晶片抛光垫,例如通过模切50.8厘米直径的圆盘。
实施例2
基本上按照实施例1的方法制备粘固磨料,不同的是聚对苯二甲酸乙二醇酯背衬的厚度为127毫米。将压敏双面胶粘带(442PC)层压在一片厚0.51毫米的聚碳酸酯片材两面上,使用实施例1所述手压辊辊压30次。从胶粘带/聚碳酸酯/胶粘带结构的一面上除去剥离衬垫,将上述粘固磨料制品层压在暴露的胶粘剂表面上,使用手压辊辊压20次。从胶粘带/聚碳酸酯/胶粘带结构的另一面上除去剥离衬垫后将CELLFLEX1800泡沫材料(厚2.3毫米)层压在上面,使用手压辊辊压20次。然后将该层压制品转变成晶片抛光垫,例如通过模切50.8厘米直径的圆盘。
实施例3-15
用与实施例2类似的方法制备所有以下粘固磨料结构的实施例,其中聚对苯二甲酸乙二醇酯背衬的厚度为76毫米或127毫米,不同的是如表3所示变化弹性组分和刚性组分。
表3
基垫结构
实施例 | 弹性组分 | 刚性组分 |
3 | 1.0毫米CELLFLEX1800 | 0.51毫米聚碳酸酯 |
4 | 2.3毫米CELLFLEX1200 | 0.51毫米聚碳酸酯 |
5 | 2.3毫米HD200 | 0.51毫米聚碳酸酯 |
6 | 2.3毫米HD200 | 0.76毫米聚碳酸酯 |
7 | 2.3毫米CELLFLEX1800 | 0.76毫米聚碳酸酯 |
8 | 2.3毫米CELLFLEX1200 | 0.76毫米聚碳酸酯 |
9 | 2.3毫米HD200 | 0.38毫米聚碳酸酯 |
10 | 2.3毫米CELLFLEX2200XF | 0.51毫米FR4 |
11 | 2.3毫米CELLFLEX1800 | 0.51毫米FR4 |
12 | 2.3毫米CELLFLEX2200XF | 0.254毫米FR4 |
13 | 2.3毫米HD200 | 0.20毫米铝 |
14 | 2.3毫米HD200 | 0.13毫米不锈钢 |
15 | 2.3毫米CELLFLEX1800 | 0.13毫米不锈钢 |
用实施例1-15所述的所有磨料结构来修整包覆的有图案晶片,观察到当作为用于包覆的有图案硅晶片的抛光垫来评价时,所得经抛光晶片的平整度和均匀度都在工业合格的标准之内。
本文提到的所有专利、专利文献和公开出版物如同单独引用一样参考引用于本发明中。上述详细描述只是为了清楚地理解本发明,而不应该将其理解成不必要的限制。本发明不受所述精确细节的限制,因为本领域技术人员显而易见的变化将包括在权利要求书所定义的本发明范围内。
Claims (9)
1.一种磨料结构,它在对工件进行表面修整的过程中能够与工件表面的整体形态大体整合,而与工件表面的局部形态基本上不整合,所述磨料结构包含:
(a)三维、有纹理、粘固的磨料构件;
(b)至少一种弹性构件,它一般与粘固的磨料构件共同扩展;和
(c)至少一种刚性构件,它一般与弹性构件和粘固的磨料构件共同扩展,并位于这两者之间,所述刚性构件的杨氏模量大于弹性构件的杨氏模量。
2.一种用来修整工件表面的磨料结构,所述磨料结构包含:
(a)三维、有纹理、粘固的磨料制品,该制品包含其上有磨料涂层的背衬;和
(b)基垫,它一般与粘固磨料制品的背衬共同扩展,所述基垫包含:
(ⅰ)至少一种弹性构件,其杨氏模量小于约100MPa,压缩时残余应力至少约为60%;和
(ⅱ)至少一种刚性构件,它一般与弹性构件和粘固磨料制品的背衬共同扩展,并位于这两者之间,所述刚性构件的杨氏模量大于弹性构件的杨氏模量,至少约为100MPa。
3.如权利要求1或2所述的磨料结构,其中所述弹性构件的厚度约0.5-5毫米,所述刚性构件的厚度约0.075-1.5毫米。
4.如权利要求1或2所述的磨料结构,其中弹性构件的模量比刚性构件的模量低至少约25%。
5.如权利要求1或2所述的磨料结构,其中弹性构件的模量比刚性构件的模量低至少约50%。
6.如权利要求1或2所述的磨料结构,其中弹性构件包含一层或多层泡沫材料。
7.如权利要求1或2所述的磨料结构,它还包含位于刚性构件和弹性构件之间的连接件。
8.如权利要求1或2所述的磨料结构,它还包含位于粘固的磨料构件和基垫之间的连接件。
9.一种修整半导体晶片暴露表面的方法,包括以下步骤:
(a)将所述表面与一种磨料结构接触,所述磨料结构包含三维、有纹理、粘固的磨料构件;至少一种弹性构件,它一般与粘固的磨料构件共同扩展;和至少一种刚性构件,它一般与弹性构件和粘固的磨料构件共同扩展,并位于这两者之间,所述刚性构件的杨氏模量大于弹性构件的杨氏模量;和
(b)使晶片和磨料结构相对移动,从而修整晶片的表面。
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CN100551623C (zh) * | 2003-01-10 | 2009-10-21 | 3M创新有限公司 | 应用于化学机械平面化的垫结构 |
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- 1997-08-06 CA CA002262579A patent/CA2262579A1/en not_active Abandoned
- 1997-08-06 DE DE69713108T patent/DE69713108T2/de not_active Expired - Lifetime
- 1997-08-06 JP JP50974798A patent/JP2001505489A/ja active Pending
- 1997-08-06 CN CN97197153A patent/CN1068815C/zh not_active Expired - Lifetime
- 1997-08-06 EP EP97936207A patent/EP0921906B1/en not_active Expired - Lifetime
- 1997-08-06 KR KR10-1999-7001029A patent/KR100467400B1/ko not_active IP Right Cessation
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CN100551623C (zh) * | 2003-01-10 | 2009-10-21 | 3M创新有限公司 | 应用于化学机械平面化的垫结构 |
CN101106082B (zh) * | 2006-07-13 | 2011-07-06 | 硅电子股份公司 | 用于同时双面磨削多个半导体晶片的方法和平面度优异的半导体晶片 |
CN101214636B (zh) * | 2008-01-19 | 2010-09-08 | 广东奔朗新材料股份有限公司 | 金刚石磨具制作方法及金刚石磨具 |
CN103328158A (zh) * | 2011-01-26 | 2013-09-25 | 3M创新有限公司 | 具有复制的微结构化背衬的磨料制品以及其使用方法 |
CN106457508A (zh) * | 2014-05-21 | 2017-02-22 | 富士纺控股株式会社 | 研磨垫及其制造方法 |
CN106457508B (zh) * | 2014-05-21 | 2019-05-31 | 富士纺控股株式会社 | 研磨垫及其制造方法 |
CN113439010A (zh) * | 2019-02-13 | 2021-09-24 | 3M创新有限公司 | 具有精确成形特征部的磨料元件、用其制成的磨料制品及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
WO1998006541A1 (en) | 1998-02-19 |
JP2001505489A (ja) | 2001-04-24 |
DE69713108T2 (de) | 2002-12-12 |
AU3893297A (en) | 1998-03-06 |
KR100467400B1 (ko) | 2005-01-24 |
CA2262579A1 (en) | 1998-02-19 |
DE69713108D1 (de) | 2002-07-11 |
CN1068815C (zh) | 2001-07-25 |
US6007407A (en) | 1999-12-28 |
EP0921906B1 (en) | 2002-06-05 |
US5692950A (en) | 1997-12-02 |
KR20000029865A (ko) | 2000-05-25 |
EP0921906A1 (en) | 1999-06-16 |
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