CN1224533A - 一种光发射和/或接收的半导体本体的制作方法 - Google Patents
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Abstract
一种光发射和/或接收半导体本体的制作方法,它具有至少一层由GaAsxP1-x组成的半导体层,其中0≤x< 1。在根据本发明的方法中,至少半导体层的一部分顶面在第一刻蚀步骤中用H2SO4∶H2O2∶H2O混合物刻蚀溶液处理,在之后的第二刻蚀步骤中用氢氟酸处理,结果是至少半导体层的一部分顶面形成粗糙面。
Description
本发明涉及一种光发射和/或接收半导体本体的制作方法,它具有至少一层由GaAsxP1-x组成的半导体层,其中0≤x<1。
已知几种具有这类半导体本体的发光二极管。因此,比如在欧洲专利登记EP 584 599中描述了一种发光二极管芯片,其中在一层n-导电的GaP衬底上敷上一层n-导电的GaP外延层,而在这一层上再敷上一层p-导电的GaP外延层。GaP衬底的底面配备了由Au-Ge-合金构成的触极金属化层,而在p-GaP外延层的顶面敷一层触极金属化层,它由比如Au层、Au-zn层、Ti-W-N-层和Au或Al层一层一层地组成的p-导电的GaP外延层构成。
此外,还已知一些发光二极管,其中由GaAsP构成的层序列是靠外延敷在GaP衬底上的。这个层序列包括比如由GaP衬底开始,首先是增加了As-成分的GaAsP过渡层,一层n-掺杂的GaAsP层(掺杂材料:比如碲或硫)和一层p-掺杂的GaAsP层(掺杂材料:锌)。在p-掺杂的GaAsP层上敷一层触极金属化层,比如由p-掺杂的GaAsP层开始,由一层金-锌层,一层TiWN层和一层铝层组成。GaP衬底的底面配备了触极金属化层,它比如由在GaP衬底上敷的金-锗层组成。
依据As成分的情况可以用上述半导体本体制造发射从黄色到红外范围光的发光二极管。然而,这种半导体本体的缺点在于,从半导体本体耦合输出只是半导体本体产生的光的一部分。
美国专利US-4,582,952描述了一种太阳电池,它由透明的GaP衬底开始,由具有梯度分布的As成分的第一p-掺杂GaAsP层,第二p-掺杂GaAsP层,n-掺杂GaAsP层和GaP盖层组成。GaP衬底和GaP盖层分别配备了多个金属触极。
发光二极管或光电二极管或太阳电池的效率决定于由半导体本体辐射出或进入半导体本体的辐射发生损耗的那一重要部分。引起该损耗的主要原因是半导体材料和周边介质(比如空气或塑料封装)折射率的大区别。这种大区别对透过半导体本体顶面的辐射的总反射的非常小的临界角有影响。然而,从半导体本体直接透出的部分只是那些与上表面法线成角小于临界角的部分。留下的辐射部分反射回半导体本体。
本发明的任务在于,阐述一种制造改善了光输出或输入耦合的至少具有一层GaAsxP1-x半导体层的光发射和/或接收的半导体本体的方法,这里0≤x<1。
该任务通过具有权利要求1特征的方法得以解决。从属权利要求2到9涉及根据本发明方法有利的改进。
根据本发明设计为至少半导体层一部分顶面要在第一刻蚀步骤中用H2SO4∶H2O2∶H2O混合物处理,在之后的第二刻蚀步骤中用稀释的氢氟酸刻蚀,结果是至少一部分半导体层顶面形成粗糙面。
通过粗糙顶面实现的有利影响是,半导体本体内产生的辐射、与平坦的上表面相比较大的部分以小于总反射临界角的角度射在半导体层顶面上。
粗糙半导体顶面的另一个优点在于,当半导体元件中半导体本体直接由塑料封装包围的情况下,提高了半导体本体与塑料封装之间的粘接强度。因此降低了在工作和因而加速老化半导体元件期间塑料封装与半导体本体脱离的危险。
根据本发明方法的另一个有利的改进,当半导体本体具有其上敷有GaAsP层序列的n-掺杂GaP衬底时,半导体本体的所有自由表面被弄粗糙。这种情况下,自由表面应理解为不提供触极金属化层的那部分顶面。
对于具有这种半导体本体适于产生光的发光二极管的情况,由于GaAsP的能带间隙小于GaP的,GaP衬底对于在GaAsP层序列产生的电磁辐射是可透光的。因此,有利于该辐射由半导体本体穿过其整个自由表面耦合输出。
在GaP衬底的底面敷一触极金属化层,使得半导体本体的边界上具有镜平面是有利的。其结果是,GaAsP层序列在触极金属化层方向上发射的辐射大量地从后者反射并因此可以穿过自由表面耦合输出。
根据本发明方法的另一个优选的改进中,在第一刻蚀步骤中刻蚀溶液H2SO4∶H2O2∶H2O选择的比例为3∶1∶1,温度选择在20至80℃之间,而刻蚀时间选择为半分钟至10分钟之间。用这个方法还可实现要刻蚀的半导体本体顶面完全不被污染并没有其它的残留物。
根据本发明和所述方法的改进的另一个优选的改进中,在第二刻蚀步骤中采用40-50%浓度的氢氟酸。第二刻蚀步骤要在15至30℃,特别是大约25℃的温度下实施,持续时间为30分钟至120分钟。
借助上面规定的两个刻蚀步骤,有利地得到粗糙的顶面,具有彼此相连高约1μm的锯齿形状。对于发光二极管可以此有利地增加约40%的光。
根据本发明方法的另一个优选的改进中,半导体本体具有一个GaP衬底,其上敷有掺杂氮(N)-的GaP(缩写:GaP:N)的层序列。对于这种适于发光的半导体本体,同样,衬底对于GaP层序列中产生的辐射是有利透光的,于是,这种情况下同样通过半导体顶面的粗糙面大大提高了光的耦合输出。
在一个特别有利的用于同时制造大量的引言所述类型半导体本体的方法中,首先在GaP做的衬底晶片上敷由GaAsxP1-x组成的半导体层序列,其中0≤x<1,或GaP:N。然后在衬底晶片的底面敷第一触极金属化层和在层序列的顶面敷多个第二触极金属化层。接着,先在第一刻蚀步骤中用组分为H2SO4∶H2O2∶H2O的刻蚀溶液并在第二刻蚀步骤中用氢氟酸(HF)处理层序列的自由顶面。
最后,包括衬底晶片、层序列、第一和第二触极金属化层的半导体晶片被分离成分立的半导体本体,比如发光二极管芯片。
如果对于半导体本体的侧面规定同样要弄粗糙,那么,半导体本体在敷过第一和第二触极金属化层之后,将半导体晶片加上一个黏膜或其它的固定介质并分离成独立的发光二极管半导体本体。在分开的半导体本体脱离固定介质并进一步处理形成,比如,发光二极管之前,上述的两个刻蚀步骤依次进行。
现将本发明的方法用实施例和图1到4更详细地说明,其中:
图1根据本发明方法的第一实施例制作的半导体本体的原理示意图,
图2根据本发明方法的第二实施例制作的半导体本体的原理示意图,
图3同时大量制作根据本发明方法第一实施例具有粗糙表面的半导体本体的制作流程的原理示意图,以及
图4同时大量制作根据本发明方法第二实施例具有粗糙表面的半导体本体的制作流程的原理示意图
在这些图中相同部分用相同的符号表示。
图1所示半导体本体是一个发射光的半导体本体,比如一个发光二极管半导体本体。这种情况下,在GaP衬底1上配置了一光发射层序列。在GaP衬底1上的是,比如,第一GaAsxP1-x外延层2,这里0≤x<1,在它上面依次配置,比如n-掺杂的第二GaAsxP1-x外延层3,这里0≤x<1。比如可以用Te或S用做n-型掺杂材料。
在第二GaAsxP1-x外延层3上敷的是p-掺杂的第三GaAsxP1-x外延层4,这里0≤x<1,它是掺杂,比如,Zn。由GaP衬底1开始,第一GaAsxP1-x外延层2具有增加的As含量,比如由x=0直到x=第二GaAsxP1-x外延层4的As含量。
GaP衬底1的底面配置的是第一触极金属化层5,它包括一层序列,比如Au-Ge合金/Ag/Au。在第三GaAsxP1-x外延层4的顶面配置的是第二触极金属化层6。该第二触极金属化层具有,比如,直接敷在第三GaAsxP1-x外延层4上的Au-Zn层,以及敷在所述Au-Zn层上的Au层。然而,专业人士认为适合的任何其它材料和层组分也可以用于触极金属化层5和6。
整个自由表面7,即所述的半导体本体没有被第一5和第二6触极金属化层覆盖的顶面,在这种情况下就是顶面11的一部分和侧面12提供为粗糙面8。后者具有彼此相接的锯齿状(比如高度约为1μm)结构。
制造粗糙面8的方法包括第一和第二刻蚀步骤,半导体本体的自由表面7在第一刻蚀步骤中用组分为H2SO4∶H2O2∶H2O(3∶1∶1)的刻蚀溶液来处理,而在第二刻蚀步骤中用氢氟酸(40到50%)来处理。
第一刻蚀步骤在温度为15到80℃之间特别是25℃下实施,持续30秒到10分钟。第二刻蚀步骤在温度为15到30℃之间实施,持续30分钟到120分钟。
图2中所示的半导体本体,同样是一个发射光的半导体本体,也还有一个GaP衬底层1。在GaP衬底层1上敷一n-掺杂的第一GaP:N的外延层9,在它上面配置一p-掺杂的第二GaP:N的外延层10。GaP的n-型掺杂导致带隙的降低,其影响是GaP衬底也透过由第一9和第二10GaP:N外延层制成的层序列17中产生的光。
与图1中所示的半导体本体的另一个区别在于,此处只设计了具有粗糙面8的半导体本体的顶面11而侧面12没有弄粗糙。制作粗糙面8所使用的方法相当于,比如,与图1相关描述的方法。
另外,图2以实施例示出,半导体本体可以怎样放入传统的LED外壳里,外壳包括一个第一电连接端19和一个第二电连接端20,一个透光的基本本体21和一个透光的封装22。这种情况下,半导体本体是靠比如导电的焊锡或导电胶把它的第一触极金属化层5固定在第二电连接端20上面。第二触极金属化层6借助导线23与第一电连接端19相连。基本本体21部分地包围着电连接端19、20并包含一个放置半导体本体的凹槽。比如可以这样来形成凹槽,使得它构成一个将光从半导体本体耦合输出的反射器。除此之外,凹槽内填满了可透光的封装22,它直接地界定了半导体本体的自由顶面7。封装22由比如透明的人造树脂构成并且与半导体本体的粗糙面8形成微啮合,它提高了半导体本体上封装22的附着强度并因此明显地降低了分离的危险。
为了完整起见,当然可以说,图1的半导体本体也可以装入这类的外壳里。微啮合自然不仅在半导体本体的顶面而且在其侧面形成。同样,外壳也可以整体地由透明人造树脂制作并具有任意希望的形状。
将半导体本体的自由上表面弄粗糙的结果是,比如对于由上述半导体本体构成的发光二极管,光增加超过了40%。
当然,也可以这样制造图1中的半导体本体,只在其顶面11有粗糙面8。同样,可以将图2中的半导体本体设计为其整个自由顶面7为粗糙面8。
在图3中原理地示意用于同时制造多个根据图1的半导体本体的制造过程中,首先(图A)在预先固定的GaP衬底晶片13上敷上第一GaAsxP1-x外延层2、第二GaAsxP1-x外延层3和第三GaAsxP1-x外延层4。衬底晶片13的底面14配置触极金属化层5。第三GaAsxP1-x外延层4的顶面15敷多个第二触极金属化层6。触极金属化层5、6借助比如蒸镀或溅射来制作。
接下来(图B),包括GaP衬底晶片13、第一2、第二3、第三4GaAsxP1-x外延层、第一5和第二6触极金属化层的半导体晶片敷在固定介质16,比如粘膜上,并被分割成独立的半导体本体。这可以,比如,靠锯来完成。
接下来(图C),自由表面,即所述各种情况下的半导体本体的顶面11和侧面12(侧切面)按如上所述的第一和第二刻蚀步骤弄粗糙。已完成的、弄粗糙的半导体本体再从固定介质16上分离并,比如,进一步处理以形成发光二极管。
在图4中原理地示意用于同时制造多个根据图2的半导体本体的制造过程与图3所述的方法过程基本的区别在于,第一和第二刻蚀步骤在分割半导体晶片之前实施。其造成的影响只是,半导体晶片顶部11称作没有复盖上触极金属化层6的那部分设计为粗糙面8。
同样可以设计为,半导体本体的顶面11和侧面12的部分区域具有粗糙面8。这种情况下半导体晶片在刻蚀步骤之前不完全锯透而是只锯开部分并在刻蚀之后分离。
如果使用一种在两个刻蚀步骤之一会受到侵蚀的材料用做第二触极金属化层6,那么可以事先将它们用抗刻蚀溶液的盖层覆盖。弄糙之后再将这个盖层去掉。
Claims (9)
1.一种光发射和/或接收半导体本体的制作方法,该半导体本体具有至少一层由GaAsxP1-x组成的半导体层,其中0≤x<1,其特征在于,至少半导体层的一部分顶面在第一刻蚀步骤中用H2SO4∶H2O2∶H2O混合物刻蚀溶液处理,在之后的第二刻蚀步骤中用氢氟酸处理,结果是至少半导体层一部分顶面形成粗糙面(8)。
2.根据权利要求1的方法,其特征在于,粗糙面(8)呈彼此相连的锯齿形状。
3.根据权利要求1或2的方法,其特征在于,使用了具有GaP衬底的半导体本体,在衬底上敷一层序列(17,18),它包括至少一用氮掺杂的GaP外延层。
4.根据权利要求1或2的方法,其特征在于,使用了具有GaP衬底的半导体本体,在衬底上敷一层序列(17,18),它包括至少一GaAsxP1-x外延层,其中0<x<1。
5.根据权利要求1至4的其中一项的方法,其特征在于,整个半导体本体的自由顶面(7)包括粗糙面(8)。
6.同时制作多个光发射和/或接收半导体本体的方法,该半导体本体具有至少一层由GaAsxP1-x组成的半导体层,其中0≤x<1,或由GaP∶N组成的半导体层,其特征在于,
a)首先在GaP组成的衬底晶片(13)上敷一GaAsxP1-x组成的层序列(17,18)其中0≤x<1,
b)在衬底晶片(13)的底面(14)敷一第一触极金属化层(5)而在层序列(17,18)的顶面(15)敷至少一第二触极金属化层(6),
c)层序列(17,18)的自由顶面首先在第一刻蚀步骤中用H2SO4∶H2O2∶H2O混合物刻蚀溶液处理,在第二刻蚀步骤中用氢氟酸(HF)处理,结果是自由顶面形成粗糙面(8),及,
d)包括衬底晶片(13)、层序列(17,18)、第一(5)和第二(6)触极金属化层的半导体晶片被分离成分立的半导体本体。
7.同时制作多个光发射和/或接收半导体本体的方法,该半导体本体具有至少一层由GaAsxP1-x组成的半导体层,其中0≤x<1,或由GaP∶N组成的半导体层,其特征在于,
a)首先在GaP组成的衬底晶片(13)上敷一GaAsxP1-x组成的层序列(17,18)其中0≤x<1,
b)在衬底晶片(13)的底面(14)敷一第一触极金属化层(5)而在层序列(17,18)的顶面(15)敷多个第二触极金属化层(6),
c)包括衬底晶片(13)、层序列(17,18)、第一(5)和第二(6)触极金属化层的半导体晶片被敷在一固定介质(16)上,
d)半导体晶片被分离成分立的半导体本体,及,
e)半导体本体的自由顶面首先在第一刻蚀步骤中用H2SO4∶H2O2∶H2O混合物刻蚀溶液处理,在第二刻蚀步骤中用氢氟酸(HF)处理,结果是自由顶面形成粗糙面(8)。
8.根据权利要求1至7其中一项的方法,其特征在于,在第一刻蚀步骤中刻蚀溶液H2SO4∶H2O2∶H2O选择的比例为3∶1∶1,温度选择在15至80℃之间,而刻蚀时间选择为半分钟至10分钟之间。
9.根据权利要求1至8其中一项的方法,其特征在于,在第二刻蚀步骤中氢氟酸为40-50%,温度选择在15至30℃之间,而刻蚀时间选择为30分钟至120分钟之间。
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CN105428475B (zh) * | 2015-12-17 | 2018-05-01 | 映瑞光电科技(上海)有限公司 | 垂直led芯片结构及其制备方法 |
WO2019029170A1 (zh) * | 2017-08-11 | 2019-02-14 | 厦门三安光电有限公司 | 一种发光装置及其制造方法 |
US11005008B2 (en) | 2017-08-11 | 2021-05-11 | Xiamen San'an Optoelectronics Co., Ltd. | Method for manufacturing light emitting device |
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DE19632627A1 (de) | 1998-02-19 |
JP2001501365A (ja) | 2001-01-30 |
US6531405B1 (en) | 2003-03-11 |
EP0944924A1 (de) | 1999-09-29 |
WO1998007195A1 (de) | 1998-02-19 |
TW353237B (en) | 1999-02-21 |
DE59708575D1 (de) | 2002-11-28 |
CN1227748C (zh) | 2005-11-16 |
EP0944924B1 (de) | 2002-10-23 |
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