CN1217409C - 防短路的绝缘栅极双极晶体管模块 - Google Patents
防短路的绝缘栅极双极晶体管模块 Download PDFInfo
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Abstract
一种通过压力接触的IGBT模块,它包括许多并联在一起的单独的芯片(4),其中还有一种层(7),该层使得短路很容易就能稳定。该层(7)可以为一种薄片,一种涂料或一种焊料成份,它与半导体芯片(4)的主电极(5,6)保持接触。典型地,该层(7)包含有银,且同半导体材料组成一种低共熔混合物,其熔点低于两种伙伴材料的熔点。
Description
技术领域
本发明涉及功率电子领域。本发明涉及一种高功率半导体模块,具体地讲,为一种IGBT(绝缘栅极双极晶体管)模块。
背景技术
事实表明,在通过压力接触的晶闸管中,出现故障后将会导致短路。该短路在大片芯片表面上将维持很长一段时间。倘若在一组串接的晶闸管中加上冗余晶闸管,那么在关断阶段中就由剩余完好的晶闸管来承受电压,晶闸管组也可继续运行。故障晶闸管随后就在设计的维护工作过程中被替换。
在晶闸管模块中,半导体硅通过机械、电的方式接于两块钼板之间。硅的熔点为1420℃,钼的熔点比它高,而硅钼金属间化合物的熔点则更高。因此,在故障过程中,硅首先局部熔化,当电流流过时,在半导体的整个厚度上由熔化硅形成一种导电渠。该故障区域可能扩散和/或移动,但只影响芯片面积的一小部分。在气密封闭的外壳内,熔化的硅不会氧化,但会与钼反应形成一种粉末。该过程将持续到所有硅被耗完,而且可能延续好些年。
与晶闸管半导体元件相反,IGBT芯片在制作时不是一种大面积单元,通常情况下,在IGBT模块中布有大量单个的小面积芯片,它们彼此绝缘且依次排列。譬如,专利EP 0499707B1中就公布了这样一种模块。
已经发现,通过压力实现接触的IGBT模块不能产生上述稳定的短路。这首先得归因于单个芯片的面积太小,而且硅的体积也太小,在这种情况下短路假稳态过程仅持续几个小时。此外,外壳经常是故意做成不气密的,熔化硅便会同氧气发生反应而形成绝缘SiO2。故障芯片中如果没有任何稳定的短路通径,很可能发生以下最糟的情形。假使模块中剩余的芯片及开关动作依旧完好,它们在关断过程中就要承受电压。这时迫使电流流过故障芯片,在电压高达完好的芯片的其击穿电压是,该电流就会形成功率密度极高的等离子体。结果是整个模块全被破毁。
发明内容
为此,本发明的目的就是提供一种功率半导体模块,它由单个小面积的芯片组成,而且当某个芯片发生短路时不会导致整个模块失灵。对于上述该种元件,可由一种功率半导体模块技术方案得以实现。该功率半导体模块具有模块外壳(1),在所述模块外壳(1)中包括衬底(2)和至少两个半导体芯片(4),每一半导体芯片(4)具有接触支柱(3)和两个主电极(5,6),其中,第一个主电极(5)与衬底(2)保持电接触,而第二个主电极(6)则与接触支柱(3)保持电接触,在一个主电极(5,6)与衬底(2)或接触支柱(3)之间提供一种导电层(7),其特征在于,所述半导体模块包括用于确保在一个半导体芯片(4)损坏的情况下使该所述半导体芯片(4)的两个主电极(5,6)之间稳定短路的装置,所述装置包括损坏的半导体芯片(4)的导电层(7),导电层(7)包含一种材料,该材料与半导体芯片(4)的材料一起组成一种化合物或合金,其熔点低于半导体芯片(4)的材料的熔点。
发明的核心在于,硅半导体的一个或两个主电极直接与一层接触,该层由一种合适的材料组成,例如银。该层材料必须与硅形成一种低共熔混合物。短路时,整个层状结构受到加热,一旦达到低共熔混合物的熔点后,在该层与硅的接触面上便开始形成一种导电熔体。然后该区域扩散到半导体的整个厚度,由此形成一种金属导电渠。
根据发明,在受损过程中,遭侵害的硅半导体芯片其主电极之间将形成一种金属导电渠,使得短路很容易就变得稳定。该导电渠只限制在芯片面积上的一部分,但传送全部的额定电流,由此杜绝了其它硅也产生发热现象。该导电渠中的金属导电熔体或相应的硅银固体化合物其熔点都必须低于纯硅的熔点。
附图说明
附图1示出了本发明的一种功率半导体模块剖面图。图形的尺寸比例不是实际的。
具体实施方式
附图1以剖面图形式示出了本发明的一种高功率半导体模块优选实施范例。在共同外壳1中,许多单个的半导体芯片(4)彼此绝缘且呈依次排列,附图1中只画出了两只单个的芯片。这些芯片并联电连接,而大电流所需的有源半导体结就是通过这种方式由许多单个的面组成的。附图1没有示出用于驱动该半导体器件的常规焊接的栅极连接。
半导体芯片4在其下面及上面各有一种金属化的主电极5、6,它们与金属接触面保持电接触。芯片装在导电的衬底2上,每个芯片正上方装有一个接触支柱3。另外还有薄片或板片,这在图中没有画出,它们的热膨胀与硅是相匹配的,一方面,该种薄片或板片可用在第一主电极5和衬底2之间,另一方面还用在第二主电极6和接触支柱3之间。这些薄片或板片由诸如钼、铜或钼铜复合物等材料制成。
在第一种实施方案中,只有通过给外壳1的端面施加压力才能产生足够的电接触。在该情形下,接触支柱3压到第二个主电极6上,从而接触到芯片4。因此本方案不需要焊料。根据本发明,层7位于主电极5、6中的一个与其相邻的金属接触面之间。依照本发明,层7也可紧贴于两个主电极之后。利用一种合适的材料薄片极容易制成发明中的层7,或者把层7作为一种涂料施加在主电极上,优选地,层7含有Ag材料。通常,发明中层7的厚度在选择时应大于半导体4厚度的一半。较薄的涂层不足以形成一种连续的导电渠。
在第二种实施方案中,接触不只是由压力产生,主电极5、6与金属接触面之间带有焊料层,目的是产生一种粘接材料结。焊料层可与第一个主电极5、6接触,而发明的另一种层7可与相反的主电极6、5保持接触。此外,焊料层也可以直接与发明的层7相接触,在这种情形下,相反各侧可选择为靠压力或是焊接方式接触。还有一种非常有优势的实施方案,其中焊料层与发明的层7是一样的。在此情况下,焊料中至少含有一种成份,它能与硅形成低共熔混合物。
对硅半导体芯片来说,银是一种合适的低共熔伙伴。银硅合金的熔点(低共熔点)为835℃,其中按原子量计银为11%,因此该熔点远远低于纯硅的熔点。利用银进行实验,产生的是可再生稳定短路,每个芯片(芯片面积为12×12mm)额定载流量可高达1500A,时间超过1000小时。当然,也可以采用金、铜、镁、铝等材料,但由于铝可能被氧化,所以将它优选地做在气密的外壳内。总之,如果选用不同的半导体材料,便可具体采用其它材料。
低共熔伙伴无需为纯净物形式,但它可以是化合物或合金的一部分,如一种含银的焊料。这种化合物的熔点远远低于低共熔混合物的熔点。低共熔伙伴的体积至少应占化合物或合金的10%。
对于上述所有实施方案,其损坏过程情形如下:首先,损坏过程是在一只单个芯片内发生短路,随后全部额定电流流经该芯片。包含半导体芯片4,电极5、6以及发明层7在内的多层结构受到加热,一旦温度达到低共熔点,就会产生一种含硅的熔体。倘使发明涂层足够厚,从接触面开始,在整个芯片上就会形成一种由熔体组成的导电渠。电流由该导电渠进行传送,从而防止了多层结构加热至纯硅熔点。
上述解释没有讲述半导体芯片本身的特性和内部结构。如果模块代表一种IGBT模块的话,则内部结构就相应代表IGBT或二极管的内部结构,当然,发明也可适用于其它小面积半导体元件。
显然,根据上述教导,可有本发明的各种修改和变型。因此,应该理解,在所附权利要求的范围内,在此明确地描述以外的内容也可以实施本发明。
符号清单
1.外壳
2.衬底
3.接触支柱
4.半导体芯片
5,6主电极
7.层
Claims (9)
1.一种功率半导体模块,该功率半导体模块具有模块外壳(1),在所述模块外壳(1)中包括衬底(2)和至少两个半导体芯片(4),每一半导体芯片(4)具有接触支柱(3)和两个主电极(5,6),
第一个主电极(5)与衬底(2)保持电接触,而第二个主电极(6)则与接触支柱(3)保持电接触,
在一个主电极(5,6)与衬底(2)或接触支柱(3)之间提供一种导电层(7),
其特征在于,
所述半导体模块包括用于确保在一个半导体芯片(4)损坏的情况下使该所述半导体芯片(4)的两个主电极(5,6)之间稳定短路的装置,
所述装置包括损坏的半导体芯片(4)的导电层(7),导电层(7)包含一种材料,该材料与半导体芯片(4)的材料一起组成一种化合物或合金,其熔点低于半导体芯片(4)的材料的熔点。
2.根据权利要求1的功率半导体模块,其特征在于,导电层(7)为一种薄片或一种涂料。
3.根据权利要求2的功率半导体模块,其特征在于,通过加压形成在衬底(2)与半导体芯片(4)之间的连接或半导体芯片(4)与接触支柱(3)之间的连接。
4.根据权利要求1的功率半导体模块,其特征在于,导电层(7)为一种焊料层。
5.根据权利要求2或4的功率半导体模块,其特征在于,导电层(7)的厚度至少为半导体芯片(4)厚度的一半。
6.根据权利要求5的功率半导体模块,其特征在于,在导电层(7)中与半导体材料组成低共熔混合物的元素的比例按体积至少占10%。
7.根据权利要求6的功率半导体模块,其特征在于,半导体材料为硅,且导电层(7)的材料包含有铝、银、金、铜或镁或这些元素的化合物。
8.根据权利要求7的功率半导体模块,其特征在于,半导体芯片(4)为一个IGBT或一个二极管。
9.根据权利要求8的功率半导体模块,其特征在于,外壳(1)在包围半导体芯片(4)时并不是气密的。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19843309A DE19843309A1 (de) | 1998-09-22 | 1998-09-22 | Kurzschlussfestes IGBT Modul |
DE19843309.3 | 1998-09-22 |
Publications (2)
Publication Number | Publication Date |
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CN1248794A CN1248794A (zh) | 2000-03-29 |
CN1217409C true CN1217409C (zh) | 2005-08-31 |
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CN99120350XA Expired - Lifetime CN1217409C (zh) | 1998-09-22 | 1999-09-22 | 防短路的绝缘栅极双极晶体管模块 |
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US (1) | US6426561B1 (zh) |
EP (1) | EP0989611B1 (zh) |
JP (1) | JP2000106374A (zh) |
CN (1) | CN1217409C (zh) |
CZ (1) | CZ294300B6 (zh) |
DE (2) | DE19843309A1 (zh) |
RU (1) | RU2225660C2 (zh) |
UA (1) | UA57774C2 (zh) |
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EP2530711A1 (en) | 2011-05-30 | 2012-12-05 | ABB Research Ltd. | Power semiconductor arrangement |
EP2544229A1 (en) | 2011-07-07 | 2013-01-09 | ABB Research Ltd. | Power semiconductor arrangement |
EP2560203A1 (en) * | 2011-08-17 | 2013-02-20 | ABB Technology AG | Power semiconductor arrangement |
CN103890941B (zh) * | 2011-10-21 | 2016-10-26 | Abb技术有限公司 | 功率半导体模块和具有多个功率半导体模块的功率半导体模块组件 |
JP5894780B2 (ja) * | 2011-12-13 | 2016-03-30 | 昭和電工株式会社 | 磁気記録媒体の製造方法 |
EP2790217A1 (de) * | 2013-04-09 | 2014-10-15 | ABB Technology AG | Leistungshalbleitermodul |
CN104183556B (zh) * | 2013-05-23 | 2018-09-14 | 国家电网公司 | 一种全压接式绝缘栅双极晶体管器件 |
EP2827366A1 (en) * | 2013-07-18 | 2015-01-21 | ABB Technology AG | Power semiconductor module |
DE102014207174A1 (de) | 2014-04-15 | 2015-10-29 | Siemens Aktiengesellschaft | Kurzschlussvorrichtung zum automatischen Kurzschließen eines Transistors und Verfahren zu einem solchen Kurzschließen |
DE102014207928A1 (de) | 2014-04-28 | 2015-10-29 | Siemens Aktiengesellschaft | Schaltungseinheit für einen Transistor und Verfahren zum Betreiben einer solchen |
DE102014207927A1 (de) | 2014-04-28 | 2015-10-29 | Siemens Aktiengesellschaft | Transistoranordnung für einen Spannverband und Spannverband mit zumindest einer solchen Transistoranordnung |
DE102014107287A1 (de) | 2014-05-23 | 2015-11-26 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Vorrichtung und Verfahren zur Überbrückung eines elektrischen Energiespeichers |
DE102015206531A1 (de) | 2014-07-09 | 2016-01-14 | Siemens Aktiengesellschaft | Leistungselektronikschaltung und Umrichter mit einer Leistungselektronikschaltung |
CN104134648B (zh) * | 2014-07-15 | 2017-02-22 | 株洲南车时代电气股份有限公司 | 功率半导体器件 |
DE102015103247A1 (de) | 2015-03-05 | 2016-09-08 | Ge Energy Power Conversion Technology Limited | Schaltmodul mit Kurzschlussschutz und Leistungselektronikmodul mit diesem |
JP6407422B2 (ja) * | 2015-05-26 | 2018-10-17 | 三菱電機株式会社 | 圧接型半導体装置 |
JP6860510B2 (ja) | 2015-06-22 | 2021-04-14 | アーベーベー・シュバイツ・アーゲーABB Schweiz AG | パワー半導体モジュール用のばね要素 |
EP3306663A1 (en) * | 2016-10-05 | 2018-04-11 | ABB Schweiz AG | Sic-on-si-based semiconductor module with short circuit failure mode |
EP3352213B1 (en) | 2017-01-23 | 2021-10-06 | ABB Power Grids Switzerland AG | Semiconductor power module comprising graphene |
EP3566246B1 (en) | 2017-02-01 | 2020-11-18 | ABB Power Grids Switzerland AG | Power semiconductor module with short circuit failure mode |
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JP6834815B2 (ja) * | 2017-07-06 | 2021-02-24 | 株式会社デンソー | 半導体モジュール |
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DE1949731A1 (de) * | 1969-10-02 | 1971-04-15 | Bbc Brown Boveri & Cie | Halbleiterelement mit kombinierten Loet-Druckkontakten |
DE2257078A1 (de) * | 1972-11-21 | 1974-05-30 | Siemens Ag | Halbleiterbauelement mit druckkontakt |
US3852805A (en) * | 1973-06-18 | 1974-12-03 | Gen Electric | Heat-pipe cooled power semiconductor device assembly having integral semiconductor device evaporating surface unit |
DE2825682C2 (de) * | 1978-06-12 | 1984-09-20 | Brown, Boveri & Cie Ag, 6800 Mannheim | Halbleiterbauelement mit Isoliergehäuse |
EP0499707B1 (de) * | 1991-02-22 | 1996-04-03 | Asea Brown Boveri Ag | Abschaltbares Hochleistungs-Halbleiterbauelement |
JP3256636B2 (ja) * | 1994-09-15 | 2002-02-12 | 株式会社東芝 | 圧接型半導体装置 |
JP3588503B2 (ja) * | 1995-06-20 | 2004-11-10 | 株式会社東芝 | 圧接型半導体装置 |
DE19530264A1 (de) * | 1995-08-17 | 1997-02-20 | Abb Management Ag | Leistungshalbleitermodul |
JPH09312357A (ja) * | 1996-05-21 | 1997-12-02 | Fuji Electric Co Ltd | 半導体装置 |
JPH10335579A (ja) * | 1997-05-27 | 1998-12-18 | Toshiba Corp | 大電力半導体モジュール装置 |
KR100219806B1 (ko) * | 1997-05-27 | 1999-09-01 | 윤종용 | 반도체장치의 플립 칩 실장형 솔더 범프의 제조방법, 이에 따라 제조되는 솔더범프 및 그 분석방법 |
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1998
- 1998-09-22 DE DE19843309A patent/DE19843309A1/de not_active Withdrawn
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1999
- 1999-08-11 EP EP99810723A patent/EP0989611B1/de not_active Expired - Lifetime
- 1999-08-11 DE DE1999511223 patent/DE59911223D1/de not_active Expired - Lifetime
- 1999-09-13 US US09/394,717 patent/US6426561B1/en not_active Expired - Lifetime
- 1999-09-13 CZ CZ19993229A patent/CZ294300B6/cs not_active IP Right Cessation
- 1999-09-17 JP JP11264189A patent/JP2000106374A/ja active Pending
- 1999-09-21 RU RU99120099/28A patent/RU2225660C2/ru active
- 1999-09-21 UA UA99095235A patent/UA57774C2/uk unknown
- 1999-09-22 CN CN99120350XA patent/CN1217409C/zh not_active Expired - Lifetime
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CZ294300B6 (cs) | 2004-11-10 |
EP0989611A3 (de) | 2000-08-02 |
DE19843309A1 (de) | 2000-03-23 |
DE59911223D1 (de) | 2005-01-13 |
EP0989611A2 (de) | 2000-03-29 |
UA57774C2 (uk) | 2003-07-15 |
CN1248794A (zh) | 2000-03-29 |
RU2225660C2 (ru) | 2004-03-10 |
EP0989611B1 (de) | 2004-12-08 |
CZ322999A3 (cs) | 2000-04-12 |
US6426561B1 (en) | 2002-07-30 |
JP2000106374A (ja) | 2000-04-11 |
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