CN1212052A - 在过程变送器中的压力传感器探测装置 - Google Patents
在过程变送器中的压力传感器探测装置 Download PDFInfo
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- G01L27/00—Testing or calibrating of apparatus for measuring fluid pressure
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Abstract
对一电容传感器输入一扰动,它可由一LED照亮,引起电容量增加(图4),其作用随真空度降低而下降,一阶跃电压能被用于产生一有效压力变化,振荡频率、衰变率、幅度被观察(图5),相应地,压力输出被补偿或出现报警。
Description
本发明涉及工业的过程控制,尤其是涉及在工业过程控制中测量流体压力所使用的一种压力传感器的探测装置。
压力变送器是用在过程压力的遥测以及把压力信息通过双线过程控制回路,传输到过程控制的控制室。变送器包括有一测量传感器,该传感器用于测出一过程的绝对压力或差分压力,差分压力是例如,用于在通过收缩管道时监视过程流量的变化。
当压力传感器处在恶劣的工作环境时,其精度是随着时间的推移而降低,因此,为了保持压力测量,就需要定期地更换或标定传感器,标定工作就需要工作人员进入现场,卸下传感器再加上测试压力,这是耗时、危险的以及可能需将过程关闭,一种对压力传感器有能力进行探测的压力变送器就不要求将变送器从管线上取下和同过程分离,这是对工业过程控制的有用贡献。
本发明的一个方面是:一变送器有能力在一过程控制系统中对压力传感器进行探测诊断。该变送器包括一具有一用于接收过程压力的压力敏感结构的压力传感器,在一实施例中,一电容器耦合于压力敏感结构而其电容相应于过程压力而变化。测量电路测试出该电容,并使用输出电路通过过程控制回路而将该电容发送出来。探测电路是耦合于压力传感路以及对压力传感器提供一探测输入而完成对压力传感器的探测,探测电路监测由测量电路响应于探测输入而确定的电容量的变化,根据电容的变化,确定关于压力传感器的条件。
图1为本发明的包含有探测电路的变送器的剖视图。
图2为本发明中所使用的传感器的剖面透视图。
图3为本发明在图1中包含有探测电路的变送器所使用电路的方块图。
图4为一实施例中电容对时间的曲线图。
图5为另一实施例的电容对时间的曲线图。
本发明提供一对压力传感器有能力进行探测的过程控制变送器,本发明对易碎材料制成的传感器特别有用,适合的材料包括陶瓷、兰宝石、硅、石英、红宝石和金刚石。
图1显示具有变送器主体52、传感器主体54、和法兰盘55的压力变送器50,传感器主体54包括压力传感器70A和70B,该传感器分别测量过程流体的绝对压力P1和绝对压力P2,变送器主体52包括变送器(I/O)电路60,它把压力P1和P2的信息通过双金属连线的过程控制环路,例如-4-20mA的电流环路而传送出来,线路板57,将传感线路板58耦合到传感器70A和70B上以及接收有关电感P1和P2的电压信号,传感器电路板58上的电路系统将这些信号作数字化处理及使用数据总线62把压力信息送到变送器电路60,在插件67A和67B上固定传感器70A和70B,过程障板71形成空腔75用以防止压力P1和P2从传感器主体54的插件67A或67B上消失。空腔75可以是真空或用惰性气体充满,电路板57和58之间横跨障板71提供了电学上的通路73A、73B和73C,图2是附有传感器70A的插板67A的剖切透视图,在一实施例中,插板70A包含有氧化铝。
本发明是使用易碎材料制成的压力传感器,一实施例采用了单晶体材料制成的压力传感结构,并以熔接方式加以接合以免引入异质材料而影响精确度。该结构可以被对结构施压的过程液体所环绕的,这是可能的,因为结构是由抗蚀材料所制成的,包含有易碎材料的传感器,由压缩产生了变形,该压缩所产生的工作应力对误差应力的比值较高,因此有一个较高的信噪比,这是由于易碎材料的受压强度比拉伸强度大所致,这种构造轮廓对腐蚀敏感度较低。因为将该结构直接放在过程液体中,从而省去了隔离膜及光油并改善了可靠性。一由同样单晶体材料所制成的长杆使应力得以隔离并有助于减少应力传递的误差。电学上的引线也通过长杆提供,并同过程液体相隔离,通过长杆件的路径也能被作用一基准压力。
因为传感器的工艺已经有了进步,变送器就能够在它的测量中提高精度,精度提高后就要求更好和更精确的探测技术,本发明提供一精确的技术,用于探测一压力传感器,在本发明中,一探测输入施加于压力传感器,探测的输入引起压力传感器输出的变化,这种变化可以被监测并用以确定传感器的状态,在图1中,光源100安装在靠近传感器70A和70B的支柱102上,已有技术已经披露光源100的幅射光照亮着传感器70A和70B,会使传感器70A和70B的输出发生变化。尤其是,如果压力传感器70A和70B包含有电容板104以及压力是由极板104之间的电容值来确定的话,则传感器70A和70B被照亮时,电容就会增加。最好是,光源100的位置和强度已使光源100幅射到达极板104。而且已经观察到的这种现象是正比于极板104之间的真空度,随着真空度的降低而降低,本发明提供的技术可用于直接地评估在绝对压力传感器中的一基准真空度,电容值的变化很小,在100微微微法(aF)量级,所以需要高灵敏的电子测量技术。本实施例尤其适合用于确定压力传感器的真空度损失。
图3是本发明一实施例的变送器50的电路图,变送器50包括接口电路110、微处理器112及电容测量/补偿电路114,微处理器112耦合于接口110也连接于存储器116及系统时钟118。图3显示了本发明一实施例中微处理器112耦合于光源100,光源100可以包括,例如光发射二极管(LED)。在操作中,变送器50耦合于过程控制环路120,该环路中有一环流I,典型的情况是,变送器50位于远距离测量过程的现场,过程控制环路是连接于控制室的设备上,接口电路110在端点119处耦合到环路120上并提供使用电流I的电源输出,该电流I通常作为变送器50的电源。电容测量/补偿电路114测量传感器70A(和70B,在图3中未示)的极板104之间的电容。电容误差的变化。由电路114作补偿,该电路即提供一代表过程压力的压力输出到微处理器112。微处理器112按照在存储器116中存储的指令并采用系统时钟118所确定的速度运行,微处理器112根据电路114的压力输出确定一过程变量,例如过程的流量或产生高于微处理器112将过程变量提供给接口110在环路上输出。以便接口110将信息格式化。环路120可以按在工业过程控制中的任何控制方案运行,例如,过程变量能用4mA信号代表零电平和20mA代表满刻度电平之间的控制环路电流I加以传输,同时或按另一方式数字信息也可使用任何公知的数字传输技术被送到环路120上,例如按HART方式或按Feildbus方式。通常测量电路114是放在电路板58上,而微处理器112,接口110,存储器116和时钟118是处在图1中的变送器电路60中,另外,电路114包括一模一数转换器。
按照实施例,光源100耦合于微处理器112,但是,光源100根据控制电路114或者根据未图示的独立探测电路的控制而操作,周期性地或根据环路120接收命令的控制,而使光源100进行探测试验,光源100的瞬时脉冲照亮了极板104之间区域的传感器70A。开关126把板104耦合到电容测量/补偿电路114上。开关126的运作将在后面作更详细说明。电路114监测极板104间的电容,图4是显示了极板104间电容的电容对时间关系曲线,注意的是,当光源100打开时,电容产生一阶跃上升并保持相对不变直到光源100被关闭,当光源100被关闭时,电容类似地降落一相应的阶跃,反应阶跃128的幅度正比于板104间出现的气体分子的数量。
微处理器112监测阶跃128的大小,如果阶跃128的幅度是适当的小,那么压力测量能被补偿,例如,根据阶跃128的振幅,压力测量能稍微减小。这种减小可以是线性减小、多项式减小或一些其它类型的曲线,用于补偿在传感器70A中的真空度损失。另外,如果阶跃128的振幅度比预定极限大,则一警示状态就被启动,指示传感器70A和70B已失效。该警示状态可由接口110通过环路120上传输出来。
开关126使用在本发明的另一实施例中,希望验证压力传感器70A和70B是适当响应于压力的变化。开关126通过应用一由电压源130产生的阶跃电压对压力传感器输入一个微小的扰动。阶跃电压的变化被加到传感器上然后监测传感器的响应,由于外加电压所产生的有效电压由方程给出:
在方程式中,ΔP是由于外加电压V而产生的有效电压的变化,G是极板104之间的额定间隙,Epsilon(ε。)是气体的介电常数,在实施例中,G大约等于0.5微米,如果加以5伏的阶跃电压输入,那么有效的电压变化大约为0.064磅/英寸2。
本发明包括了上述的不同方面的技术,以便得到用于压力传感器的探测信息。在实施例中,一已知的电压加到极板104上,由于压力变化而引起的电容变化被监测出来。这可通过微处理机112的控制,将开关126瞬时同电压源接触,然后重新将电路板114接到极板104上而达到。一动作传感器将响应于一预定的偏置电压。注意的是,如果测量电路把直流偏置电压加到传感器70A,那么所能加的外加直流偏压的量是有一极限的。
在另一实施例中,一电压脉冲被瞬间加到极板104上,这可以采用快速的转换开关126来达到,这将促使极板104产生如图5所示的振荡,该图是电容对时间的曲线图。输出信息中包含了衰变信号和振荡信号的频率的方式出现的振幅和动态信息。信号的初始幅度给出了如上相同的信息,而振荡频率则可测出从而可得到附加的信息。衰变率信息则标志了过程液体的环境。例如,衰变率能用于提供一相关的闭塞或把变送器包上外壳的警示,阻尼由方程给出:
式中A。是初始振幅,f。是共振频率以及Q是传感器的Q值,在这实施例中,微处理器112能够对电路114上所接收到的信号进行信号处理。从而确定信号的频率、幅度和衰变率,为了确定频率响应,该技术需要相当高的带宽电路,该技术可以使用抽真空的传感器或非真空的例如一个充满油或惰性气体的基准水平的传感器。
根据初始振幅、频率和Q值,传感器能被补偿,于是就延长了它的使用寿命。另外,如果任何这些参数超过预定的界限,那么一报警状态将能启动并通过环路120发送出产生报警信号。
虽然本发明已经结合优选实施例进行描述,本领域的技艺人员将会认识到,在形式和细节上进行的变化并没有脱离本发明的精神和范围,例如,虽然已经结合电容式的传感器进行了描述,但本发明还可以使用其它的传感技术。而且,所描述的技术可以使用由任何构造和使用已经开发或将来可以被开发的任何其它材料制成的传感器。在电路上所提供的是一个实施例,但本发明可以任何适当实施例包括任何数模电路的组合来完成,可以使用任意类型探测输入、任意类型的光辐射源、脉冲输入、切换技术或其它输入都可以被使用,所有在此使用的,对传感器的任何输入像辐射或电学上的输入,都是一种“扰动输入”。
Claims (10)
1、一种过程控制系统中的变送器,其特征在于它包括有:
一压力传感器,它包括有:
一用于接收过程压力的一压力响应结构;
一电容器至少具有一对极板耦合于该压力响应结构,该电容器
的电容值与过程压力相关;
一测量电路耦合于电容器并提供与电容有关的压力输出信号;
一输出电路把压力输出信号传输到过程控制环路上;以及
一探测电路耦合于压力传感器并提供扰动输入到压力传感器,及根据响应于扰动输入而产生的电容变化所引起的压力输出变化提供出一传感器探测输出。
2、按权利要求1所说的变送器,其特征在于所说的探测电路包括一辐射发射装置,及扰动输入包括由辐射发射装置所产生的指向压力响应结构上的电磁辐射。
3、按权利要求1所说的变送器,其特征在于:辐射发射装置包括有一光发射二极管。
4、按权利要求1所说的变送器,其特征在于所说的扰动输入包括有一电输入信号加到电容器上。
5、按权利要求4所说的变送器,其特征在于所说的电输入信号包括有一电压。
6、按权利要求1所说的变送器,其特征在于探测电路监测出压力输出中的变化以便提供出一探测输出。
7、按权利要求1所说的变送器,其特征在于扰动输入包含有一脉冲,及探测电路根据压力输出中的振荡频率提供探测输出。
8、按权利要求1所说的变送器,其特征在于扰动输入包括有一脉冲,以及探测电路根据压力输出中的衰变率提供探测电路。
9、按权利要求1所说的变送器,其特征在于所说的扰动输入包括一脉冲,以及探测电路根据压力输出的幅度,提供探测输出。
10、按权利要求1所说的变送器,其特征在于测量电路根据传感器的探测输出而补偿压力输出。
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US08/605,941 US5665899A (en) | 1996-02-23 | 1996-02-23 | Pressure sensor diagnostics in a process transmitter |
US08/605,941 | 1996-02-23 |
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EP (1) | EP0882221B1 (zh) |
JP (1) | JP4510148B2 (zh) |
CN (1) | CN1212052A (zh) |
BR (1) | BR9707621A (zh) |
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CN103148976A (zh) * | 2011-12-06 | 2013-06-12 | 罗斯蒙德公司 | 用于压力变送器的改进的铁磁流体填充流体 |
CN103148976B (zh) * | 2011-12-06 | 2016-12-21 | 罗斯蒙特公司 | 用于压力变送器的改进的铁磁流体填充流体 |
Also Published As
Publication number | Publication date |
---|---|
EP0882221A1 (en) | 1998-12-09 |
EP0882221B1 (en) | 2003-07-09 |
DE69723423T2 (de) | 2003-12-24 |
WO1997031252A1 (en) | 1997-08-28 |
US5665899A (en) | 1997-09-09 |
JP2000509484A (ja) | 2000-07-25 |
CA2246613A1 (en) | 1997-08-28 |
JP4510148B2 (ja) | 2010-07-21 |
DE69723423D1 (de) | 2003-08-14 |
BR9707621A (pt) | 1999-07-27 |
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