CN1211073A - 半导体器件 - Google Patents

半导体器件 Download PDF

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CN1211073A
CN1211073A CN97117703A CN97117703A CN1211073A CN 1211073 A CN1211073 A CN 1211073A CN 97117703 A CN97117703 A CN 97117703A CN 97117703 A CN97117703 A CN 97117703A CN 1211073 A CN1211073 A CN 1211073A
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copper sheet
organic substrate
semiconductor device
semiconductor chip
produced
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CN1124649C (zh
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照井诚
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Oki Electric Industry Co Ltd
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Abstract

用粘合剂3将在键合区中带有用来暴露半导体芯片4及其键合引线5的窗口的铜片6连接到已在密封侧加有铜箔布线图形2的有机衬底1的密封侧。铜片6对密封树脂7的粘合性比对任何常规抗蚀剂的粘合性都更高。根据本发明得到的半导体器件可防止可能源于密封或回流工序中的热过程的密封树脂在界面处的剥离并消除水分的进入,从而使抗湿性能的降低减为最小。

Description

半导体器件
本发明涉及到半导体器件，确切地说是涉及到一种塑性网格焊球阵列封装件(以下称之为P-BGA)结构。
现参照有关的附图来解释普通P-BGA的结构。
图11是P-BGA的剖面图，而图12是图11中区域A的放大图。
所示出的是一个有机衬底1、一个铜箔布线图形2、一个半导体芯片4、键合引线5、密封树脂7、抗蚀剂8、接地层9和焊料球12。
制造P-BGA结构的一般步骤是用抗蚀剂8涂覆由例如由双马来三嗪(bismaleic triazine)树脂构成并带有厚度为10-40μm的铜箔布线图形2的有机衬底1以保护没有连接着键合引线的布线图形2的大部分区域、用导电胶将半导体芯片4置于衬底1上、用键合引线5将半导体芯片4的各电极连接到有机衬底1上的布线图形2、用密封树脂7密封衬底1上安装有半导体芯片4的一侧、并在衬底1的另一侧加上网格形球12。
但常规P-BGA允许用含有不利于与密封树脂7粘合的硅组分的抗蚀剂8来覆盖待要用密封树脂7密封的有机衬底1的大部分区域。具体类型的密封树脂7在安装到母板过程中的密封或回流工序中的热过程的触发下，可能使抗蚀利8释放其硅组分，并随后在界面处从密封树脂7剥离，从而降低抗湿性能。
考虑到常规半导体器件的前述缺点，本发明的一个主要目的是提供一种新颖的改进了的半导体器件。它能够防止可能源于密封或回流工序中热过程的界面处密封抗蚀剂的剥离，并消除水分的进入，从而将抗湿性能的降低减到最小。
本发明的另一目的是提供一种新颖的改进了的半导体器件，其中连接于衬底的铜片上整体制作了一个用来支持半导体芯片的管芯焊盘，以便建立辐射通道，用来释放半导体芯片所产生的热，从而可成功地采用较高功耗类型的半导体芯片。
本发明的又一目的是提供一种新颖的改进了的半导体器件，其中一个铜片被电连接于制作在有机衬底中的接地层，从而具有条形线结构，使信号线的电感得以减小，简化了特征阻抗的所需组合，并由于接地的密封效应而使信号线之间的串扰的产生减为最小。
本发明的再一目的是提供一种新颖的改进了的半导体器件，其中的有机衬底的侧边用铜片覆盖以防止水分从侧面方向进入，从而提高抗湿性能。
本发明的另一目的是提供一种新颖的改进了的半导体器件，其中球安装区中接地端的数目减为最小，从而使I/O端的数目可以增大，并使单位封装件的端口利用得以优化。
本发明的另一目的是提供一种新颖的改进了的半导体器件，其中的信号连接端位于内部以尽量缩短键合引线的长度，使信号线的电感得以降低并减少噪声的产生。
为了达到上述目的，本发明的第一特点体现在塑性网格焊球阵列封装件中，其中带有用于暴露半导体芯片及其键合引线的窗口的铜片被粘接于有机衬底的密封侧。
本发明的第二特点体现在一种塑性网格焊球阵列封装件中，其中，其上整体制作了用来支持半导体芯片的管芯焊盘的铜片，用粘合剂连接到有机衬底的密封侧。
本发明的第三特点体现在一种塑性网格焊球阵列封装件中，其中的铜片用粘合剂连接于有机衬底的密封侧，且通过通道孔电连接于制作在有机衬底中的接地层。
本发明的第四特点体现在一种塑性网格焊球阵列封装件中，其中的铜片用粘合剂连接于有机衬底的密封侧，在四侧端向下且向有机衬底的背面侧机械折叠以覆盖有机衬底的侧边，通过通道孔电连接于有机衬底中的接地层，且借助于镀以镍/金合金而在其折叠端加上焊胶球。
本发明的第五特点体现在一种塑性网格焊球阵列封装件中，其中，带有窗口的铜片用粘合剂连接于有机衬底的密封侧，通过通道孔电连接于有机衬底中的接地层，并在窗口的周围提供用作接地端的点状的镍/金镀层。
根据结合说明最佳实施例的附图给出的下列描述，本发明有关领域中的熟练人员将更好地理解本发明的上述和其它特点及其伴随的优点。在这些附图中：
图1是根据本发明第一实施例的P-BGA的剖面图；
图2是图1中区域B的放大图；
图3是从衬底密封侧看到的第一实施例的平面图；
图4是根据本发明第二实施例的P-BGA的剖面图；
图5是从衬底密封侧看到的第二实施例的的平面图；
图6是根据本发明第三实施例的P-BGA剖面图；
图7是从衬底密封侧看到的第三实施例的平面图；
图8是根据本发明第四实施例的P-BGA的剖面图；
图9是根据本发明第五实施例的P-BGA的剖面图；
图10是一个解释图，示出了第五实施例的P-BGA的优点；
图11是常规P-BGA的剖面图；以及
图12是图11区域A的放大图。
现参照附图以半导体器件形式更详细地描述本发明的最佳实施例。为便于描述，在结构与功能二方面基本相同的相似元件用相似的参考号表示，而且不重复解释。
图1是沿图3中A-A线的P-BGA的剖面图，示出了本发明的第一实施例。图2是图1中区域B的放大图。图3是从衬底密封侧看到的第一实施例的P-BGA的平面图。
如所示，P-BGA的制作方法是：在有机衬底1的一侧施加铜箔布线图形2，并用粘合剂3将带有用来暴露半导体芯片4和键合引线5的窗口6A的0.1-0.4mm厚的铜片连接到有机衬底1的密封侧。半导体芯片4用粘合剂4B连接到位于有机衬底1的预定区域中的管芯焊盘4A。
P-BGA的有机衬底1的密封侧用铜片6覆盖，铜片6对密封树脂7的粘合性比对普通抗蚀剂的高，从而可防止回流工序后密封树脂7的剥离，因而可尽量减少抗湿性能的降低。
根据第一实施例，连接在有机衬底1的密封侧的铜片6对密封树脂7的粘合比对普通抗蚀剂8的粘合更强。这就防止了可能源于密封或回流工序中热过程的密封树脂7的剥离，并使水分无法进入，从而使抗湿性能的降低减为最小。
此外，铜片6(导电材料)位于图形的信号线上方，从而降低了信号的感应。
现描述本发明的第二实施例。
图4是第二实施例的P-BGA沿图5中B-B线的剖面图。图5是从衬底密封侧看到的第二实施例的P-BGA平面图。
第二实施例与第一施例的不同之处在于，在连接于衬底1的密封侧的铜片6中有用来提供半导体芯片4及其键合引线5的连接区的窗口6A，窗口做成只通过键合引线5，而其上安装半导体芯片4的管芯焊盘6B则与铜片6制作成一个整体。
由于其上整体地制作了用来支持半导体芯片4的管芯焊盘6B的铜片6被连接在P-BGA的有机衬底1的密封侧上，故其对密封树脂7的高粘合性在密封或回流工序之后防止了从密封树脂7的剥离，并使抗湿性能的降低减为最小。
与其上安装半导体芯片4的管芯焊盘6B制作成一个整体的铜片6上还带有辐射通道6C，用来释放半导体芯片4所产生的热，从而降低了热阻。
根据第二实施例，连接在有机衬底1的密封侧上的铜片6对密封树脂7的粘合比对普通抗蚀剂的粘合更强。这就防止了可能源于密封或回流工序中热过程的密封树脂7的剥离，使水分无法进入，从而使抗湿性能的降低减为最小。
此外，由于铜片6带有整体地制作于其上的用来支持半导体芯片4的管芯焊盘6B，故半导体芯片4所产生的热可以沿管芯焊盘6B和热辐射通道6C而耗散到铜片6，从而改善了热辐射效率，并使得有可能采用高功耗型半导体芯片4。同时，2A所示的是键合端点。
现描述本发明的第三实施例。
图6是第三实施例的P-BGA沿图7中C-C线的剖面图。图7是从衬底密封侧看到的第三实施例的P-BGA的平面图。
如所示，在由铜箔制成的信号线图形10被置于有机衬底1的密封侧之后，用粘合剂3将厚度为0.1-0.4mm的铜片6连接到有机衬底1的密封侧。
铜片6还通过通道孔11被电连接到制作在有机衬底1中的接地层9。
用铜片6将P-BGA的有机衬底1的密封侧覆盖，铜片6对密封树脂7的粘合比对普通抗蚀剂的粘合更强，从而可防止回流工序之后密封树脂7的剥离，并使抗湿性能的降低减为最小。
由于铜片6用通道孔11被电连接到制作在有机衬底1中的接地层9，故铜片6和接地层9之间的信号线10承受地电位，从而提高了电学特性。参照图6,10A所示的是键合端点。
根据第三实施例，连接于有机衬底1的密封侧上的铜片6对密封树脂7的粘合比对普通抗蚀剂8的粘合更强。这就防止了可能源于密封或回流工序中的热过程的密封树脂7的剥离，并使水分无法进入，从而使抗湿性能的降低减为最小。
用通道孔11将铜片6电连接到制作在有机衬底1中的接层9，使铜片6和接地层9之间的信号线10能够承受地电位(在条状线结构中)。其结果是，信号线10的电感将被减小，简化了特征阻抗的所需组合，并由于地电位的密封效应而使信号线之间的串扰的产生减为最小。
现描述本发明的第四实施例。
图8是本发明第四实施例的P-BGA的剖面图。
在此实施例中，在铜箔布线图形2被置于有机衬底1的密封侧上之后，用粘合剂3将厚度为0.1-0.4mm的铜片粘接到有机衬底1的密封侧。然后在四个侧端将铜片6向下并向有机衬底1的背面侧折叠，以便覆盖有机衬底1的侧边。
铜片6还通过通道孔11被电连接到制作在有机衬底1中的接地层9。铜片6在有机衬底1背面侧边处的四个折叠的端边被镀以镍金合金，然后加上焊胶球12A。
根据第四实施例，连接在有机衬底1的密封侧上的铜片6对密封树脂7的粘合比对普通抗蚀剂8的粘合更强。这就防止了可能源于密封或回流工序中的热过程的密封树脂7的剥离，并使水分无法进入，从而使抗湿性能的降低减为最小。
有机衬底1的侧边也被铜片6覆盖，从而防止了水分从侧向进入，提高了抗湿性能。
焊胶球12也被安装在铜片6的折叠端上，铜片6通过通道孔11被电连接到制作在有机衬底1中的接地层9，从而比之常规半导体器件，使球安装区处磨合端(grinding terminals)的数目减为最小。这就有可能安装更多的I/O端点，从而优化单位封装件的端点的使用。
现描述本发明的第五实施例。
图9是本发明第五实施例的P-BGA的剖面图，而图10是P-BGA优点的解释图。
在此实施例中，第三或第四实施例所述的连接于有机衬底的铜片6在窗口周围的特定点处(离边缘0.5-1.00mm)镀以镍金合金16。这些镀过的点16用作磨合部并用连接引线5连接到半导体芯片4的磨合端。
在高速器件中，如图10(a)所示，信号键合引线5s延伸到位于源键合端14和磨合端13(围绕管芯焊盘呈圆形安排)之外的信号键合端15，从而将增加长度。
参照图10(b)，第五实施例使镍金镀点16能够制作在有机衬底1上的铜片6上并用作接地端，致使源键合端14和信号键合端15位置向内。其结果是，从信号键合端15伸出的键合引线5S的长度可缩短。
根据第五实施例，除了第三和第四实施例的优点之外，信号键合端15比任何常规半导体器件都位于更里边，于是键合引线长度减为最小，从而减小信号线的电感并降低噪音的产生。
虽然以半导体器件的形式已描述了本发明的各种最佳实施例，但这些并不是限制。对本技术领域熟练人员来说，显然可作出各种改变和修改而不超越所附权利要求所确定的本发明的范围与构思。
如上所述，本发明提供了下列优点。
根据本发明的第一特点，连接于有机衬底密封侧的铜片对密封树脂的粘合性比对任何常规抗蚀剂的粘合性都高，这就防止了可能源于密封或回流工艺中的热过程的密封树脂在界面处的剥离并消除了水分的进入，从而使抗湿性能的降低减为最小。
根据本发明的第二特点，有机衬底上的铜片与其上装有半导体芯片的管芯焊盘制作成一个整体，使半导体芯片所产生的热能够以更高的效率耗散。由于热辐射的效率提高了，故能够安装更高功耗类型的半导体芯片。
根据本发明的第三特点，有机衬底上的铜片通过通道孔电连接到制作在有机衬底中的接地层，从而组成一个带状线结构，其中铜片和接地层之间的信号线承受地电位。其结果是，可减小信号线的电感，简化特征阻抗的所需组合，并由于接地电位的密封效应而使其间串扰的产生减为最小。
根据本发明的第四特点，有机衬底的侧边被铜片覆盖，从而防止了水分从侧向进入，提高了抗湿性能。此外，焊胶球被安装在用通道孔电连接于有机衬底中的接地层的铜片的折叠端，从而使球安装区处磨合端的数目比起常规半导体器件来说减为最小。这就可以安装更多的I/O端，从而优化单位封装件的端点的使用。
根据本发明的第五实施例，接地端制作在连接于有机衬底的铜片的折叠端上，以致信号键合端的位置更向内，从而缩短了键合引线的长度。
其结果是，信号线的电感被成功地降低并降低了噪声的产生。
此处将1997年2月12日提出的日本专利申请No.9-27425的整个公开(包括说明书、权利要求、附图和概述)全部列为参考。

Claims (16)

1．一种半导体器件，它包含：
有机衬底；
安装在有机衬底预定位置处的半导体芯片；
在键合区中带有用来暴露半导体芯片及其键合引线的窗口的铜片；以及
将铜片粘接到有机衬底的密封侧的粘合剂层。
2．根据权利要求1的半导体器件，其中的制作在有机衬底密封侧上的电路布线图形用粘合剂层与铜片隔离。
3．根据权利要求1的半导体器件，还包含至少密封半导体芯片及其键合引线的键合区的密封树脂。
4．根据权利要求1的半导体器件，其中的铜片通过通道孔电连接到制作在有机衬底中的接地层。
5．根据权利要求4的半导体器件，其中的铜片在其窗口的周围配置用于接地的点状连接端。
6．根据权利要求1的半导体器件，其中的铜片带有延伸的周边，它机械地向下并向有机衬底背面侧折叠以覆盖有机衬底侧边。
7．根据权利要求6的半导体器件，其中的铜片通过通道孔电连接到制作在有机衬底中的接地层。
8．根据权利要求7的半导体器件，其中铜片的折叠的周边延伸配备有连接端。
9．一种半导体器件，它包含：
有机衬底；
安装在有机衬底预定位置上的半导体芯片；
在键合引线区中带有用来暴露连接于半导体芯片的键合引线的窗口的铜片以及整体制作于其上用来支持半导体芯片的管芯焊盘；
将铜片连接于有机衬底密封侧的第一粘合剂层；以及
将半导体芯片连接于管芯焊盘的第二粘合剂层。
10．根据权利要求9的半导体器件，其中制作在有机衬底密封侧上的电路布线图形用第一粘合剂层与铜片隔离。
11．根据权利要求9的半导体器件，还包含至少密封半导体芯片和键合引线的引线键合区的密封树脂。
12．根据权利要求9的半导体器件，其中的铜片通过通道孔电连接到制作在有机衬底中的接地层。
13．根据权利要求12的半导体器件，其中的铜片在其窗口的周围配置用于接地的点状连接端。
14．根据权利要求9的半导体器件，其中的铜片带有延伸的周边，它机械地向下并向有机衬底背面侧折叠以覆盖有机衬底侧边。
15．根据权利要求14的半导体器件，其中的铜片通过通道孔电连接到制作在有机衬底中的接地层。
16．根据权利要求15的半导体器件，其中铜片的折叠的周边延伸配备有连接端。
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KR19980069914A (ko) 1998-10-26
US6060774A (en) 2000-05-09
JPH10223672A (ja) 1998-08-21
EP0863549A2 (en) 1998-09-09
DE69733193D1 (de) 2005-06-09
EP0863549A3 (en) 1999-02-24
DE69733193T2 (de) 2006-03-02
JP3483720B2 (ja) 2004-01-06
CN1124649C (zh) 2003-10-15
KR100369879B1 (ko) 2003-06-18

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