CN1210764C - Cvd方法 - Google Patents

Cvd方法 Download PDF

Info

Publication number
CN1210764C
CN1210764C CNB021062137A CN02106213A CN1210764C CN 1210764 C CN1210764 C CN 1210764C CN B021062137 A CNB021062137 A CN B021062137A CN 02106213 A CN02106213 A CN 02106213A CN 1210764 C CN1210764 C CN 1210764C
Authority
CN
China
Prior art keywords
space
film
material gas
film forming
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB021062137A
Other languages
English (en)
Chinese (zh)
Other versions
CN1372302A (zh
Inventor
高尚台
汤田克久
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
NEC Corp
Original Assignee
NEC Corp
Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Anelva Corp filed Critical NEC Corp
Publication of CN1372302A publication Critical patent/CN1372302A/zh
Application granted granted Critical
Publication of CN1210764C publication Critical patent/CN1210764C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45514—Mixing in close vicinity to the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Liquid Crystal (AREA)
  • Formation Of Insulating Films (AREA)
CNB021062137A 2001-02-15 2002-02-10 Cvd方法 Expired - Fee Related CN1210764C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP038631/2001 2001-02-15
JP2001038631A JP2002246381A (ja) 2001-02-15 2001-02-15 Ｃｖｄ方法

Publications (2)

Publication Number Publication Date
CN1372302A CN1372302A (zh) 2002-10-02
CN1210764C true CN1210764C (zh) 2005-07-13

Family

ID=18901567

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB021062137A Expired - Fee Related CN1210764C (zh) 2001-02-15 2002-02-10 Cvd方法

Country Status (5)

Country Link
US (1) US6537911B2 (cg-RX-API-DMAC10.html)
JP (1) JP2002246381A (cg-RX-API-DMAC10.html)
KR (2) KR20020067647A (cg-RX-API-DMAC10.html)
CN (1) CN1210764C (cg-RX-API-DMAC10.html)
TW (1) TW529086B (cg-RX-API-DMAC10.html)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3991315B2 (ja) * 2002-09-17 2007-10-17 キヤノンアネルバ株式会社 薄膜形成装置及び方法
JP4051619B2 (ja) * 2002-09-17 2008-02-27 キヤノンアネルバ株式会社 シリコン酸化膜作製方法
US7023010B2 (en) * 2003-04-21 2006-04-04 Nanodynamics, Inc. Si/C superlattice useful for semiconductor devices
WO2006043433A1 (ja) * 2004-10-19 2006-04-27 Mitsubishi Denki Kabushiki Kaisha プラズマｃｖｄ装置
US20060223788A1 (en) * 2005-03-29 2006-10-05 Cathcart Clifton H Analgesic composition for topical use
CN101647103B (zh) * 2007-03-27 2012-05-23 佳能安内华股份有限公司 真空处理装置
JP5276101B2 (ja) * 2008-06-24 2013-08-28 東芝三菱電機産業システム株式会社 窒素ラジカル発生器、窒化処理装置、窒素ラジカルの発生方法および窒化処理方法
US8580993B2 (en) * 2008-11-12 2013-11-12 Air Products And Chemicals, Inc. Amino vinylsilane precursors for stressed SiN films
US8889235B2 (en) 2009-05-13 2014-11-18 Air Products And Chemicals, Inc. Dielectric barrier deposition using nitrogen containing precursor
US10039157B2 (en) 2014-06-02 2018-07-31 Applied Materials, Inc. Workpiece processing chamber having a rotary microwave plasma source
US10269541B2 (en) * 2014-06-02 2019-04-23 Applied Materials, Inc. Workpiece processing chamber having a thermal controlled microwave window
US11244808B2 (en) 2017-05-26 2022-02-08 Applied Materials, Inc. Monopole antenna array source for semiconductor process equipment
KR102670124B1 (ko) * 2018-05-03 2024-05-28 주성엔지니어링(주) 기판 처리 장치

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2506539B2 (ja) * 1992-02-27 1996-06-12 株式会社ジーティシー 絶縁膜の形成方法
US5614055A (en) * 1993-08-27 1997-03-25 Applied Materials, Inc. High density plasma CVD and etching reactor
US5865896A (en) * 1993-08-27 1999-02-02 Applied Materials, Inc. High density plasma CVD reactor with combined inductive and capacitive coupling
US6151071A (en) * 1996-02-29 2000-11-21 Eastman Kodak Company Circuit for generating control signals
US6125859A (en) * 1997-03-05 2000-10-03 Applied Materials, Inc. Method for improved cleaning of substrate processing systems
US6063441A (en) * 1997-12-02 2000-05-16 Applied Materials, Inc. Processing chamber and method for confining plasma
JP2000345349A (ja) * 1999-06-04 2000-12-12 Anelva Corp Ｃｖｄ装置
JP2001023918A (ja) * 1999-07-08 2001-01-26 Nec Corp 半導体薄膜形成装置

Also Published As

Publication number Publication date
KR20090092257A (ko) 2009-08-31
US6537911B2 (en) 2003-03-25
US20020110998A1 (en) 2002-08-15
KR20020067647A (ko) 2002-08-23
TW529086B (en) 2003-04-21
CN1372302A (zh) 2002-10-02
JP2002246381A (ja) 2002-08-30

Similar Documents

Publication Publication Date Title
US20250357114A1 (en) Method of forming low-k material layer, structure including the layer, and system for forming same
CN100390943C (zh) 薄膜形成装置及形成方法
CN100350574C (zh) 在被处理基板上形成硅氮化膜的cvd方法
US7825038B2 (en) Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen
US5387546A (en) Method for manufacturing a semiconductor device
US10177025B2 (en) Method and apparatus for filling a gap
US8187951B1 (en) CVD flowable gap fill
TWI535882B (zh) 使用非碳可流動ｃｖｄ製程形成氧化矽的方法
KR101533464B1 (ko) 박막 증착 장치, 박막 증착 방법 및 컴퓨터로 판독가능한 기억 매체
US8921235B2 (en) Controlled air gap formation
CN1734726A (zh) 氧化硅膜的成膜方法以及成膜装置
JP2004047996A (ja) 窒素がドープされたシリコンカーバイド膜の蒸着方法
CN1428825A (zh) 氧化硅膜制作方法
JP2017531920A (ja) 高温酸化ケイ素原子層堆積技術
CN1898409A (zh) 形成高质量低温氮化硅层的方法和设备
TW201518535A (zh) 以電漿輔助製程形成氧化物膜的方法
KR20120111738A (ko) 융통성을 가진 질소／수소 비율을 이용하여 제조된 라디칼에 의한 유전체 필름의 성장
KR20130014543A (ko) 라디칼 성분 ｃｖｄ에 의한 컨포멀 층들
CN1791972A (zh) 等离子体处理装置
CN107408493A (zh) 脉冲氮化物封装
CN101167177A (zh) 制造受应力电晶体结构的集成制程
US9312167B1 (en) Air-gap structure formation with ultra low-k dielectric layer on PECVD low-k chamber
CN1460130A (zh) 无机/有机介电薄膜的沉积系统及方法
CN1198480A (zh) 等离子体增强化学汽相淀积装置和进行所述淀积的方法
JP2017168788A (ja) 半導体装置の製造方法、基板処理装置およびプログラム

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20050713

Termination date: 20170210

CF01 Termination of patent right due to non-payment of annual fee