CN1209201C - 负压等离子体装置及负压等离子体清洗方法 - Google Patents

负压等离子体装置及负压等离子体清洗方法 Download PDF

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Publication number
CN1209201C
CN1209201C CNB021472416A CN02147241A CN1209201C CN 1209201 C CN1209201 C CN 1209201C CN B021472416 A CNB021472416 A CN B021472416A CN 02147241 A CN02147241 A CN 02147241A CN 1209201 C CN1209201 C CN 1209201C
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CN
China
Prior art keywords
substrate
plasma
processing chamber
film substrate
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB021472416A
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English (en)
Chinese (zh)
Other versions
CN1411920A (zh
Inventor
笹冈达雄
铃木直树
小林研
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
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Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of CN1411920A publication Critical patent/CN1411920A/zh
Application granted granted Critical
Publication of CN1209201C publication Critical patent/CN1209201C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32733Means for moving the material to be treated
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32697Electrostatic control
    • H01J37/32706Polarising the substrate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/015Manufacture or treatment of bond wires
    • H10W72/01571Cleaning, e.g. oxide removal or de-smearing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • H10W72/07511Treating the bonding area before connecting, e.g. by applying flux or cleaning
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • H10W72/07541Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07551Controlling the environment, e.g. atmosphere composition or temperature characterised by changes in properties of the bond wires during the connecting
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Wire Bonding (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Manufacturing Of Printed Wiring (AREA)
CNB021472416A 2001-10-18 2002-10-18 负压等离子体装置及负压等离子体清洗方法 Expired - Fee Related CN1209201C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001-320472 2001-10-18
JP2001320472 2001-10-18
JP2001320472A JP4027072B2 (ja) 2001-10-18 2001-10-18 減圧プラズマ処理装置及びその方法

Publications (2)

Publication Number Publication Date
CN1411920A CN1411920A (zh) 2003-04-23
CN1209201C true CN1209201C (zh) 2005-07-06

Family

ID=19137859

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB021472416A Expired - Fee Related CN1209201C (zh) 2001-10-18 2002-10-18 负压等离子体装置及负压等离子体清洗方法

Country Status (3)

Country Link
US (1) US6949144B2 (https=)
JP (1) JP4027072B2 (https=)
CN (1) CN1209201C (https=)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004083485A2 (en) * 2003-03-14 2004-09-30 Genus, Inc. Methods and apparatus for atomic layer deposition
JP4040037B2 (ja) * 2004-05-11 2008-01-30 ジャパン・フィールド株式会社 被洗浄物の洗浄方法及びその装置
JP4684703B2 (ja) * 2005-03-28 2011-05-18 富士機械製造株式会社 洗浄装置、液晶表示器の基板洗浄装置及び液晶表示器組付装置
DE102005016405A1 (de) * 2005-04-08 2006-10-12 Von Ardenne Anlagentechnik Gmbh Vorrichtung zur Vakuumbeschichtung von Substraten unterschiedlicher Größe
JP4884811B2 (ja) * 2006-03-20 2012-02-29 三菱重工業株式会社 ガラス基板の静電吸着装置及びその吸着離脱方法
JP4682917B2 (ja) * 2006-05-30 2011-05-11 パナソニック株式会社 大気圧プラズマ発生方法及び装置
TW200816880A (en) * 2006-05-30 2008-04-01 Matsushita Electric Industrial Co Ltd Atmospheric pressure plasma generating method, plasma processing method and component mounting method using same, and device using these methods
JP4682946B2 (ja) * 2006-07-25 2011-05-11 パナソニック株式会社 プラズマ処理方法及び装置
JP4670905B2 (ja) * 2007-06-18 2011-04-13 セイコーエプソン株式会社 接合方法、接合体、液滴吐出ヘッドおよび液滴吐出装置
JP5173699B2 (ja) * 2008-09-25 2013-04-03 株式会社日立ハイテクノロジーズ 有機elデバイス製造装置
CN101890414B (zh) * 2010-07-12 2012-01-11 中国电子科技集团公司第二研究所 在线等离子清洗机
JP5429124B2 (ja) * 2010-09-29 2014-02-26 パナソニック株式会社 プラズマ処理方法及び装置
US8844793B2 (en) * 2010-11-05 2014-09-30 Raytheon Company Reducing formation of oxide on solder
CN102468118B (zh) * 2010-11-12 2015-04-22 北大方正集团有限公司 治具及清洗机
JP2012182384A (ja) * 2011-03-02 2012-09-20 Toshiba Corp テンプレート用の基板の処理装置及びテンプレート用の基板の処理方法
CN102820204A (zh) * 2011-06-07 2012-12-12 中国科学院微电子研究所 一种射频、介质阻挡常压辉光等离子体扫描去胶系统
JP6099007B2 (ja) * 2012-12-17 2017-03-22 パナソニックIpマネジメント株式会社 プラズマ発生装置およびプラズマ発生装置を用いた洗浄装置
CN105234130B (zh) * 2015-10-22 2017-10-27 苏州求是真空电子有限公司 适用于可扰曲材料的等离子清洗装置
DE102018120269A1 (de) * 2018-08-21 2020-02-27 Relyon Plasma Gmbh Anordnung und Verfahren zur Behandlung von Objekten
CN110252739B (zh) * 2019-07-11 2020-11-24 东莞市科路科技有限公司 电极板及等离子清洗机
CN111354617B (zh) * 2020-03-13 2022-07-05 苏州市奥普斯等离子体科技有限公司 一种自动进出料等离子体处理装置及其使用方法
CN112553054A (zh) * 2020-12-10 2021-03-26 上海艾众生物科技有限公司 用于生物反应器的细胞分离设备

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5788868A (en) * 1995-09-04 1998-08-04 Dainippon Screen Mfg. Co., Ltd. Substrate transfer method and interface apparatus
US5882413A (en) * 1997-07-11 1999-03-16 Brooks Automation, Inc. Substrate processing apparatus having a substrate transport with a front end extension and an internal substrate buffer
US6350321B1 (en) * 1998-12-08 2002-02-26 International Business Machines Corporation UHV horizontal hot wall cluster CVD/growth design
KR100613674B1 (ko) * 1999-05-14 2006-08-21 동경 엘렉트론 주식회사 웨이퍼 처리 장치 및 처리 방법

Also Published As

Publication number Publication date
US20040084148A1 (en) 2004-05-06
JP2003124612A (ja) 2003-04-25
US6949144B2 (en) 2005-09-27
CN1411920A (zh) 2003-04-23
JP4027072B2 (ja) 2007-12-26

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Granted publication date: 20050706

Termination date: 20131018