CN1208504C - 用于拉晶设备的连续氧化方法 - Google Patents

用于拉晶设备的连续氧化方法 Download PDF

Info

Publication number
CN1208504C
CN1208504C CNB998118168A CN99811816A CN1208504C CN 1208504 C CN1208504 C CN 1208504C CN B998118168 A CNB998118168 A CN B998118168A CN 99811816 A CN99811816 A CN 99811816A CN 1208504 C CN1208504 C CN 1208504C
Authority
CN
China
Prior art keywords
silicon
oxygen
equipment
gas
zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB998118168A
Other languages
English (en)
Chinese (zh)
Other versions
CN1322260A (zh
Inventor
J·D·侯尔德
B·K·约翰逊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SunEdison Inc
Original Assignee
SunEdison Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SunEdison Inc filed Critical SunEdison Inc
Publication of CN1322260A publication Critical patent/CN1322260A/zh
Application granted granted Critical
Publication of CN1208504C publication Critical patent/CN1208504C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CNB998118168A 1998-10-07 1999-09-28 用于拉晶设备的连续氧化方法 Expired - Fee Related CN1208504C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/167,747 US6039801A (en) 1998-10-07 1998-10-07 Continuous oxidation process for crystal pulling apparatus
US09/167,747 1998-10-07

Publications (2)

Publication Number Publication Date
CN1322260A CN1322260A (zh) 2001-11-14
CN1208504C true CN1208504C (zh) 2005-06-29

Family

ID=22608654

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB998118168A Expired - Fee Related CN1208504C (zh) 1998-10-07 1999-09-28 用于拉晶设备的连续氧化方法

Country Status (8)

Country Link
US (2) US6039801A (https=)
EP (1) EP1123426B1 (https=)
JP (1) JP2002526377A (https=)
KR (1) KR20010079936A (https=)
CN (1) CN1208504C (https=)
DE (1) DE69908800T2 (https=)
TW (1) TW467973B (https=)
WO (1) WO2000020664A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2256266C2 (ru) * 2000-03-27 2005-07-10 Чайна Акэдеми Оф Телекоммьюникейшнс Текнолоджи Способ улучшения зоны обслуживания интеллектуальной антенной решетки
CN100415944C (zh) * 2005-12-26 2008-09-03 北京有色金属研究总院 一种清除直拉硅单晶炉内SiO的方法及装置

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6039801A (en) 1998-10-07 2000-03-21 Memc Electronic Materials, Inc. Continuous oxidation process for crystal pulling apparatus
DE10014650A1 (de) * 2000-03-24 2001-10-04 Wacker Siltronic Halbleitermat Halbleiterscheibe aus Silicium und Verfahren zur Herstellung der Halbleiterscheibe
TWI226389B (en) * 2001-09-28 2005-01-11 Komatsu Denshi Kinzoku Kk Single crystal semiconductor manufacturing apparatus and manufacturing method, and single crystal ingot
KR20040039012A (ko) * 2002-10-30 2004-05-10 주식회사 실트론 실리콘 잉곳의 성장 장치
TWI265217B (en) * 2002-11-14 2006-11-01 Komatsu Denshi Kinzoku Kk Method and device for manufacturing silicon wafer, method for manufacturing silicon single crystal, and device for pulling up silicon single crystal
JP2005289776A (ja) * 2004-04-05 2005-10-20 Canon Inc 結晶製造方法および結晶製造装置
US7141114B2 (en) * 2004-06-30 2006-11-28 Rec Silicon Inc Process for producing a crystalline silicon ingot
JP4730937B2 (ja) * 2004-12-13 2011-07-20 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 半導体単結晶製造装置および製造方法
DE102006002682A1 (de) * 2006-01-19 2007-08-02 Siltronic Ag Vorrichtung und Verfahren zur Herstellung eines Einkristalls, Einkristall und Halbleiterscheibe
US8790460B2 (en) * 2009-05-18 2014-07-29 Empire Technology Development Llc Formation of silicon sheets by impinging fluid
JP2012066948A (ja) * 2010-09-21 2012-04-05 Covalent Materials Corp シリコン単結晶引上装置のクリーニング方法
US9114989B2 (en) 2011-12-07 2015-08-25 Praxair Technology, Inc. Inert gas recovery and recycle for silicon crystal growth pulling process
KR101528055B1 (ko) * 2013-11-25 2015-06-11 주식회사 엘지실트론 잉곳 성장 장치
US10184193B2 (en) 2015-05-18 2019-01-22 Globalwafers Co., Ltd. Epitaxy reactor and susceptor system for improved epitaxial wafer flatness

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5037503A (en) * 1988-05-31 1991-08-06 Osaka Titanium Co., Ltd. Method for growing silicon single crystal
JPH02263793A (ja) * 1989-04-05 1990-10-26 Nippon Steel Corp 酸化誘起積層欠陥の発生し難いシリコン単結晶及びその製造方法
JPH0777994B2 (ja) * 1989-11-16 1995-08-23 信越半導体株式会社 単結晶の酸素濃度コントロール方法及び装置
JPH04317493A (ja) * 1991-04-15 1992-11-09 Nkk Corp シリコン単結晶の製造装置
JP2888089B2 (ja) * 1992-03-31 1999-05-10 信越半導体株式会社 シリコン単結晶引上げ装置
JP2807609B2 (ja) * 1993-01-28 1998-10-08 三菱マテリアルシリコン株式会社 単結晶の引上装置
JPH09165291A (ja) * 1995-12-14 1997-06-24 Komatsu Electron Metals Co Ltd 単結晶製造方法およびその装置
DE19628851A1 (de) * 1996-07-17 1998-01-22 Wacker Siltronic Halbleitermat Verfahren und Vorrichtung zur Herstellung eines Einkristalls
US5904768A (en) * 1996-10-15 1999-05-18 Memc Electronic Materials, Inc. Process for controlling the oxygen content in silicon wafers heavily doped with antimony or arsenic
US6039801A (en) 1998-10-07 2000-03-21 Memc Electronic Materials, Inc. Continuous oxidation process for crystal pulling apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2256266C2 (ru) * 2000-03-27 2005-07-10 Чайна Акэдеми Оф Телекоммьюникейшнс Текнолоджи Способ улучшения зоны обслуживания интеллектуальной антенной решетки
CN100415944C (zh) * 2005-12-26 2008-09-03 北京有色金属研究总院 一种清除直拉硅单晶炉内SiO的方法及装置

Also Published As

Publication number Publication date
EP1123426A1 (en) 2001-08-16
US6315828B1 (en) 2001-11-13
TW467973B (en) 2001-12-11
KR20010079936A (ko) 2001-08-22
WO2000020664A1 (en) 2000-04-13
WO2000020664A9 (en) 2000-09-08
DE69908800D1 (de) 2003-07-17
DE69908800T2 (de) 2004-04-29
CN1322260A (zh) 2001-11-14
EP1123426B1 (en) 2003-06-11
US6039801A (en) 2000-03-21
JP2002526377A (ja) 2002-08-20

Similar Documents

Publication Publication Date Title
CN1208504C (zh) 用于拉晶设备的连续氧化方法
US4642227A (en) Reactor for producing large particles of materials from gases
CN1166822C (zh) 在晶体生长过程中使用的硅熔体的钡掺杂
KR101370180B1 (ko) 용융물 오염물 저감 및 웨이퍼 오염물 저감을 위한 방향성 응고로
CN1255735A (zh) 化学汽相淀积稀土掺杂的半导体层
CN1339072A (zh) 钨掺加层坩埚及其制造方法
EP1061042A1 (en) Method for gas phase purification of carbon nanotubes by thermal treatment in diffusion furnace
JP5143016B2 (ja) 結晶性組成物、デバイスと関連方法
US5990014A (en) In situ wafer cleaning process
CN1393907A (zh) 单晶碳化硅薄膜的制造方法及制造设备
US3536522A (en) Method for purification of reaction gases
US3540871A (en) Method for maintaining the uniformity of vapor grown polycrystalline silicon
JP3915054B2 (ja) 膜形成材料、膜形成方法、及び素子
TW200931500A (en) Vapor-phase growth apparatus and vapor-phase growth method
Chen et al. Simple and catalyst-free synthesis of silicon oxide nanowires and nanocoils
JP3119475B2 (ja) 半導体装置の製造方法
RU2189405C1 (ru) Способ получения монокристаллов соединения liins2
US6309458B1 (en) Method for fabricating silicon thin film
JPH0483711A (ja) 無水シリカの製造方法
JP2842743B2 (ja) エピタキシャル成長装置のクリーニング法
KR100372331B1 (ko) 확산로에서의 열처리를 이용한 탄소나노튜브의 가스상정제 방법
JPH06128082A (ja) エピタキシャル成長装置のクリーニング方法
JPH03243688A (ja) フッ化塩素ガスによるＳｉＯｘのクリーニング方法
KR100288988B1 (ko) 수직형저압화학기상증착장치의생산효율증대및박막질개선을위한공정및장치
JP4353379B2 (ja) 膜形成材料、膜形成方法、及び素子

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20050629

Termination date: 20140928

EXPY Termination of patent right or utility model