DE69908800T2 - Kontinuierliches oxidationsverfahren für eine kristallziehungsvorrichtung - Google Patents
Kontinuierliches oxidationsverfahren für eine kristallziehungsvorrichtung Download PDFInfo
- Publication number
- DE69908800T2 DE69908800T2 DE69908800T DE69908800T DE69908800T2 DE 69908800 T2 DE69908800 T2 DE 69908800T2 DE 69908800 T DE69908800 T DE 69908800T DE 69908800 T DE69908800 T DE 69908800T DE 69908800 T2 DE69908800 T2 DE 69908800T2
- Authority
- DE
- Germany
- Prior art keywords
- oxygen
- silicon
- hot zone
- gas
- argon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims description 36
- 230000003647 oxidation Effects 0.000 title claims description 15
- 238000007254 oxidation reaction Methods 0.000 title claims description 15
- 239000007789 gas Substances 0.000 claims description 111
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 92
- 239000013078 crystal Substances 0.000 claims description 81
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 78
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 72
- 239000001301 oxygen Substances 0.000 claims description 72
- 229910052760 oxygen Inorganic materials 0.000 claims description 72
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 48
- 229910052786 argon Inorganic materials 0.000 claims description 46
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 30
- 229910052710 silicon Inorganic materials 0.000 claims description 30
- 239000010703 silicon Substances 0.000 claims description 30
- 235000012239 silicon dioxide Nutrition 0.000 claims description 24
- 239000000377 silicon dioxide Substances 0.000 claims description 22
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 238000004140 cleaning Methods 0.000 claims description 9
- 238000009792 diffusion process Methods 0.000 claims description 8
- 238000002844 melting Methods 0.000 claims description 5
- 230000008018 melting Effects 0.000 claims description 5
- 150000003377 silicon compounds Chemical class 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 238000002231 Czochralski process Methods 0.000 claims description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 32
- 230000001105 regulatory effect Effects 0.000 description 8
- 238000004090 dissolution Methods 0.000 description 6
- 238000004868 gas analysis Methods 0.000 description 5
- 238000010926 purge Methods 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000000155 melt Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- 230000035508 accumulation Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 238000005070 sampling Methods 0.000 description 3
- 238000011144 upstream manufacturing Methods 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US167747 | 1993-12-15 | ||
| US09/167,747 US6039801A (en) | 1998-10-07 | 1998-10-07 | Continuous oxidation process for crystal pulling apparatus |
| PCT/US1999/022380 WO2000020664A1 (en) | 1998-10-07 | 1999-09-28 | Continuous oxidation process for crystal pulling apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69908800D1 DE69908800D1 (de) | 2003-07-17 |
| DE69908800T2 true DE69908800T2 (de) | 2004-04-29 |
Family
ID=22608654
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69908800T Expired - Fee Related DE69908800T2 (de) | 1998-10-07 | 1999-09-28 | Kontinuierliches oxidationsverfahren für eine kristallziehungsvorrichtung |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US6039801A (https=) |
| EP (1) | EP1123426B1 (https=) |
| JP (1) | JP2002526377A (https=) |
| KR (1) | KR20010079936A (https=) |
| CN (1) | CN1208504C (https=) |
| DE (1) | DE69908800T2 (https=) |
| TW (1) | TW467973B (https=) |
| WO (1) | WO2000020664A1 (https=) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6039801A (en) | 1998-10-07 | 2000-03-21 | Memc Electronic Materials, Inc. | Continuous oxidation process for crystal pulling apparatus |
| DE10014650A1 (de) * | 2000-03-24 | 2001-10-04 | Wacker Siltronic Halbleitermat | Halbleiterscheibe aus Silicium und Verfahren zur Herstellung der Halbleiterscheibe |
| CN1145239C (zh) * | 2000-03-27 | 2004-04-07 | 信息产业部电信科学技术研究院 | 一种改进智能天线阵列覆盖范围的方法 |
| TWI226389B (en) * | 2001-09-28 | 2005-01-11 | Komatsu Denshi Kinzoku Kk | Single crystal semiconductor manufacturing apparatus and manufacturing method, and single crystal ingot |
| KR20040039012A (ko) * | 2002-10-30 | 2004-05-10 | 주식회사 실트론 | 실리콘 잉곳의 성장 장치 |
| TWI265217B (en) * | 2002-11-14 | 2006-11-01 | Komatsu Denshi Kinzoku Kk | Method and device for manufacturing silicon wafer, method for manufacturing silicon single crystal, and device for pulling up silicon single crystal |
| JP2005289776A (ja) * | 2004-04-05 | 2005-10-20 | Canon Inc | 結晶製造方法および結晶製造装置 |
| US7141114B2 (en) * | 2004-06-30 | 2006-11-28 | Rec Silicon Inc | Process for producing a crystalline silicon ingot |
| JP4730937B2 (ja) * | 2004-12-13 | 2011-07-20 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | 半導体単結晶製造装置および製造方法 |
| CN100415944C (zh) * | 2005-12-26 | 2008-09-03 | 北京有色金属研究总院 | 一种清除直拉硅单晶炉内SiO的方法及装置 |
| DE102006002682A1 (de) * | 2006-01-19 | 2007-08-02 | Siltronic Ag | Vorrichtung und Verfahren zur Herstellung eines Einkristalls, Einkristall und Halbleiterscheibe |
| US8790460B2 (en) * | 2009-05-18 | 2014-07-29 | Empire Technology Development Llc | Formation of silicon sheets by impinging fluid |
| JP2012066948A (ja) * | 2010-09-21 | 2012-04-05 | Covalent Materials Corp | シリコン単結晶引上装置のクリーニング方法 |
| US9114989B2 (en) | 2011-12-07 | 2015-08-25 | Praxair Technology, Inc. | Inert gas recovery and recycle for silicon crystal growth pulling process |
| KR101528055B1 (ko) * | 2013-11-25 | 2015-06-11 | 주식회사 엘지실트론 | 잉곳 성장 장치 |
| US10184193B2 (en) | 2015-05-18 | 2019-01-22 | Globalwafers Co., Ltd. | Epitaxy reactor and susceptor system for improved epitaxial wafer flatness |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5037503A (en) * | 1988-05-31 | 1991-08-06 | Osaka Titanium Co., Ltd. | Method for growing silicon single crystal |
| JPH02263793A (ja) * | 1989-04-05 | 1990-10-26 | Nippon Steel Corp | 酸化誘起積層欠陥の発生し難いシリコン単結晶及びその製造方法 |
| JPH0777994B2 (ja) * | 1989-11-16 | 1995-08-23 | 信越半導体株式会社 | 単結晶の酸素濃度コントロール方法及び装置 |
| JPH04317493A (ja) * | 1991-04-15 | 1992-11-09 | Nkk Corp | シリコン単結晶の製造装置 |
| JP2888089B2 (ja) * | 1992-03-31 | 1999-05-10 | 信越半導体株式会社 | シリコン単結晶引上げ装置 |
| JP2807609B2 (ja) * | 1993-01-28 | 1998-10-08 | 三菱マテリアルシリコン株式会社 | 単結晶の引上装置 |
| JPH09165291A (ja) * | 1995-12-14 | 1997-06-24 | Komatsu Electron Metals Co Ltd | 単結晶製造方法およびその装置 |
| DE19628851A1 (de) * | 1996-07-17 | 1998-01-22 | Wacker Siltronic Halbleitermat | Verfahren und Vorrichtung zur Herstellung eines Einkristalls |
| US5904768A (en) * | 1996-10-15 | 1999-05-18 | Memc Electronic Materials, Inc. | Process for controlling the oxygen content in silicon wafers heavily doped with antimony or arsenic |
| US6039801A (en) | 1998-10-07 | 2000-03-21 | Memc Electronic Materials, Inc. | Continuous oxidation process for crystal pulling apparatus |
-
1998
- 1998-10-07 US US09/167,747 patent/US6039801A/en not_active Expired - Lifetime
-
1999
- 1999-09-28 DE DE69908800T patent/DE69908800T2/de not_active Expired - Fee Related
- 1999-09-28 EP EP99948481A patent/EP1123426B1/en not_active Expired - Lifetime
- 1999-09-28 JP JP2000574754A patent/JP2002526377A/ja active Pending
- 1999-09-28 KR KR1020017003920A patent/KR20010079936A/ko not_active Ceased
- 1999-09-28 CN CNB998118168A patent/CN1208504C/zh not_active Expired - Fee Related
- 1999-09-28 WO PCT/US1999/022380 patent/WO2000020664A1/en not_active Ceased
- 1999-11-22 TW TW088117313A patent/TW467973B/zh not_active IP Right Cessation
-
2000
- 2000-01-21 US US09/489,481 patent/US6315828B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| CN1208504C (zh) | 2005-06-29 |
| EP1123426A1 (en) | 2001-08-16 |
| US6315828B1 (en) | 2001-11-13 |
| TW467973B (en) | 2001-12-11 |
| KR20010079936A (ko) | 2001-08-22 |
| WO2000020664A1 (en) | 2000-04-13 |
| WO2000020664A9 (en) | 2000-09-08 |
| DE69908800D1 (de) | 2003-07-17 |
| CN1322260A (zh) | 2001-11-14 |
| EP1123426B1 (en) | 2003-06-11 |
| US6039801A (en) | 2000-03-21 |
| JP2002526377A (ja) | 2002-08-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |