CN1205520A - 半导体存储器冗余电路 - Google Patents
半导体存储器冗余电路 Download PDFInfo
- Publication number
- CN1205520A CN1205520A CN98115951A CN98115951A CN1205520A CN 1205520 A CN1205520 A CN 1205520A CN 98115951 A CN98115951 A CN 98115951A CN 98115951 A CN98115951 A CN 98115951A CN 1205520 A CN1205520 A CN 1205520A
- Authority
- CN
- China
- Prior art keywords
- segmentation
- signal
- word line
- circuit
- redundant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 10
- 230000007547 defect Effects 0.000 claims abstract description 6
- 230000011218 segmentation Effects 0.000 claims description 73
- 239000004020 conductor Substances 0.000 abstract 2
- 230000002950 deficient Effects 0.000 abstract 1
- 238000011156 evaluation Methods 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/785—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
- G11C29/808—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout using a flexible replacement scheme
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
Landscapes
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Dram (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
Abstract
Description
Claims (2)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19729579.7 | 1997-07-10 | ||
DE19729579A DE19729579C2 (de) | 1997-07-10 | 1997-07-10 | Verfahren zum Aktivieren einer redundanten Wortleitung bei Inter-Segment-Redundanz bei einem Halbleiterspeicher mit in Segmenten organisierten Wortleitungen |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1205520A true CN1205520A (zh) | 1999-01-20 |
CN1269132C CN1269132C (zh) | 2006-08-09 |
Family
ID=7835296
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB981159516A Expired - Fee Related CN1269132C (zh) | 1997-07-10 | 1998-07-10 | 半导体存储器冗余电路 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6188617B1 (zh) |
EP (1) | EP0890902A3 (zh) |
JP (1) | JP3660804B2 (zh) |
KR (1) | KR100325649B1 (zh) |
CN (1) | CN1269132C (zh) |
DE (1) | DE19729579C2 (zh) |
TW (1) | TW394955B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100442434C (zh) * | 2000-06-14 | 2008-12-10 | 微米技术股份有限公司 | 具有分段行修复的半导体存储器 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7111193B1 (en) * | 2002-07-30 | 2006-09-19 | Taiwan Semiconductor Manufacturing Co. Ltd. | Semiconductor memory having re-configurable fuse set for redundancy repair |
US7613060B2 (en) | 2007-05-21 | 2009-11-03 | Micron Technology, Inc. | Methods, circuits, and systems to select memory regions |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4754434A (en) * | 1985-08-28 | 1988-06-28 | Advanced Micro Devices, Inc. | Switching plane redundancy |
US5126973A (en) * | 1990-02-14 | 1992-06-30 | Texas Instruments Incorporated | Redundancy scheme for eliminating defects in a memory device |
JP3040625B2 (ja) * | 1992-02-07 | 2000-05-15 | 松下電器産業株式会社 | 半導体記憶装置 |
EP0636258B1 (de) * | 1992-04-16 | 1996-03-27 | Siemens Aktiengesellschaft | Integrierter halbleiterspeicher mit redundanzeinrichtung |
KR950004623B1 (ko) * | 1992-12-07 | 1995-05-03 | 삼성전자주식회사 | 리던던시 효율이 향상되는 반도체 메모리 장치 |
KR100192574B1 (ko) * | 1995-10-04 | 1999-06-15 | 윤종용 | 디코디드 퓨즈를 사용한 반도체 메모리 장치의 컬럼 리던던시 회로 |
-
1997
- 1997-07-10 DE DE19729579A patent/DE19729579C2/de not_active Expired - Lifetime
-
1998
- 1998-07-06 TW TW087110889A patent/TW394955B/zh not_active IP Right Cessation
- 1998-07-07 JP JP19135398A patent/JP3660804B2/ja not_active Expired - Fee Related
- 1998-07-09 EP EP98112767A patent/EP0890902A3/de not_active Withdrawn
- 1998-07-10 KR KR1019980027747A patent/KR100325649B1/ko not_active IP Right Cessation
- 1998-07-10 CN CNB981159516A patent/CN1269132C/zh not_active Expired - Fee Related
- 1998-07-13 US US09/115,618 patent/US6188617B1/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100442434C (zh) * | 2000-06-14 | 2008-12-10 | 微米技术股份有限公司 | 具有分段行修复的半导体存储器 |
Also Published As
Publication number | Publication date |
---|---|
EP0890902A3 (de) | 1999-09-22 |
US6188617B1 (en) | 2001-02-13 |
DE19729579A1 (de) | 1999-01-14 |
TW394955B (en) | 2000-06-21 |
EP0890902A2 (de) | 1999-01-13 |
KR19990013743A (ko) | 1999-02-25 |
JP3660804B2 (ja) | 2005-06-15 |
JPH1173795A (ja) | 1999-03-16 |
DE19729579C2 (de) | 2000-12-07 |
CN1269132C (zh) | 2006-08-09 |
KR100325649B1 (ko) | 2002-05-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: INFINEON TECHNOLOGIES AG Free format text: FORMER OWNER: SIEMENS AKTIENGESELLSCHAFT Effective date: 20130217 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20130217 Address after: German Neubiberg Patentee after: Infineon Technologies AG Address before: Munich, Germany Patentee before: Siemens AG Effective date of registration: 20130217 Address after: Munich, Germany Patentee after: QIMONDA AG Address before: German Neubiberg Patentee before: Infineon Technologies AG |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160113 Address after: German Berg, Laura Ibiza Patentee after: Infineon Technologies AG Address before: Munich, Germany Patentee before: QIMONDA AG |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20060809 Termination date: 20170710 |
|
CF01 | Termination of patent right due to non-payment of annual fee |