CN1192265A - 用惰性气体进行基片热调整的装置与方法 - Google Patents

用惰性气体进行基片热调整的装置与方法 Download PDF

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CN1192265A
CN1192265A CN96195957A CN96195957A CN1192265A CN 1192265 A CN1192265 A CN 1192265A CN 96195957 A CN96195957 A CN 96195957A CN 96195957 A CN96195957 A CN 96195957A CN 1192265 A CN1192265 A CN 1192265A
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R·S·木卡
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Abstract

一种基片热调整装置(10),带有一腔室(12)、一位于腔室(12)之中的盘(32)和一气源(14)。盘(32)具有一顶部导热表面,带有沿着表面的一些槽沟(42)。一基片(S)放置在传热表面的一些支脚(41)上面,而气体泵入腔室(12)。盘(32)或是予以加热或是予以冷却以改变基片(S)的温度。热量主要通过气体传导加热而传输到基片(S)与盘(32)之间。由于盘(32)上的各槽沟(42),气体可以在基片(S)与传热表面之间迅速和均匀地得以分布和抽空。

Description

用惰性气体进行基片热调整的装置与方法
参考相关专利
这是1993年12月17日提交的美国专利申请08/169,432号的一个部分继续申请。
发明背景
1.发明的领域
本发明涉及到一种用于加热一基片的装置和方法，更为具体地说，涉及应用于诸如半导体晶片和平板片等平面状物件的装置和方法。
2.先有技术
美国专利5060354；5252807和4597736公开了用于半导体晶片的热处理装置。美国专利4534816公开了一单晶等离子体蚀刻反应器。美国专利5013385公开了一种带有多个单晶等离子体反应器的系统。
发明概述
按照本发明的一实施例，提供了一种用于改变基片温度的装置。此装置包括一腔室、一盘、一用于把气体送进腔室的装置，以及一用于加热盘的装置。盘位于腔室之中。盘具有一顶部表面，带有一些沿着表面的槽沟。热量通过气体传导在盘与位于顶部表面上的各支脚之上的基片之间传输。
按照本发明的另一实施例，提供了一种用于改变平面状基片的温度的装置，此装置包括一基片安放室，一位于腔室之中的具有导热表面的盘，以及一用于控制盘温度的装置，改进之处包括盘的导热表面上具有槽沟以便在盘与位于盘上面的基片之间迅速地分布气体。
按照本发明的一种方法，提供了一种从热调整装置中的平面状基片和盘传热的方法。包括的步骤是：把基片放置在装置的一腔室之中的盘上面，此盘具有一传热表面，沿着表面分布有一些槽沟；把气体送进腔室；并通过气体传导在盘与基片间传输热量。
附图的简要说明
本发明的前述各方面及其他特性结合所附各图在以下的叙述中予以说明，附图中：
图1一种体现本发明各种特点的热调整装置的一局部剖视示意简图；
图2是示于图1装置的经过加热/冷却的盘的一顶视平面图；
图3是示于图2的盘的另一实施例的一局部顶视平面图；
图4是一传热率相对于压力的图线；以及
图5是本发明另一实施例的一局部剖视示意简图；
发明的详细描述
参看图1，其中表明体现本发明的、示于抬起或开启位置上的一部热调整装置10的局部剖视示意简图。虽然本发明将参照示于附图中的各项实施例予以说明，但应当理解，本发明可以体现在各种各样不同型式和种类的另外各项实施例中。此外，可以采用任何适当尺寸、形状或型式的各种另件或者各种材料。
装置10一般包括一腔室12、一气源14，以及一真空源16。一种类似的热处理装置在美国专利申请08/169432之中有所阐述，此申请文件在此全文引入作为参考。腔室12适于连通于一基片加工系统，诸如阐述在美国专利第5013385号之中的那种，此专利在此全文引入作为参考。不过，装置10可用于任何适当类型的基片加工系统。
一顶盘22通过两根立柱26、27连接于一底盘24。顶盘22包括当基片S被装进和取出腔室12的安放区20时用于托持基片S的各支架18。各支架18从顶盘22向下伸展。一热力组件28构成腔室的底部。此热力组件28一般包括传热元件30和一传热盘32。传热元件30具有两根立柱26、27设于其中的两个孔眼34、35。传热元件30可以作为或是一加热器，例如配置各加热灯具或各加热线圈，或是一冷却器，例如配置穿之而过的冷却导管。一垂直驱动装置36连接于底盘24。驱动装置36适于相对于腔室12和传热盘32上下推动底盘24。因为各立柱26、27连接于底盘24，所以各立柱26、27也随底盘24一起被上下推动。因为顶盘22连接于各立柱26、27，所以顶盘22随底盘24一起被上下推动。顶盘22也可以包含一加热器或冷却器。可伸缩的密封件38、39在底盘24与腔室12之间包围着立柱26、27。
传热盘32连接在传热元件30的顶部。再参看图2，传热盘32配置一顶面40，带有三个适于接触，并支承它上面的基片S的支脚41。各支脚41是很小的，以限制与基片S的接触。各支脚41适于把基片S支承在顶面40上方大约0.1mm的一个距离或间隙处。不过，也可以配置其他适当数量或型式的支脚。此外，可以设置任何适当的间隙，但间隙最好是很小，诸如大约0.05mm到0.5mm，取决于基片的大小，以使在加热或冷却期间使处在间隙之内的气体有一定的粘滞特性。顶面40具有沿着顶面的一些槽沟42。各槽沟42在图示实施例中是平行的细长槽缝。每个槽沟42具有大约3mm的宽度和大约2mm的深度。不过，也可以设置其他的尺寸。各槽沟42彼此相间大约15mm的距离。不过，也可设置成别的间距。盘32还具有各支座19，用于当顶盘22被推向其下面位置时安放顶盘22上的各支架18。围绕顶面40周边的是一密封件43，用于当顶盘22被推到其下面位置时接触到顶盘22并在顶盘22与传热圆盘32之间形成密封。图3为一传热盘32a另一实施例的一局部顶视平面图。盘32具有两组槽沟：一第一组周向槽沟42a和一第二组直线槽沟42b。两组槽沟42a、42b以大体上的直角彼此相交叉。中心圆圈槽沟的直径D是大约50mm。从中心圆圈槽沟到(外围)各圆圈槽沟的半径R1、R2等的增量大约是25mm。各直线槽沟彼此倾斜的角度A大约是30°。各槽沟的宽度W在两组槽沟42a、42b中都是大约3mm，而深度都是大约2mm。在另外各实施例中，可以设置各槽沟的其他一些适当的型式或形状。
装置10可以适于或是加热或是冷却基片S。基片S通过一适当的基片传送装置(未画出)被插进安放区20的各支架18上面。当传送装置离开腔室12时，腔室12的一进口被关闭。驱动装置36随后朝向传热盘32推动顶盘22向下。各支脚41接触基片S的底侧并把基片S抬离各支架18。各支架18的底部被安放在盘32的各支座19上。顶盘22接触密封件43，借以在顶盘22与传热盘32之间密封基片S。这样构成了安放区20里面的一个子封闭区。一种惰性气体，诸如氩气，从气源14被供向安放区20里面的这一子封闭区。传热元件30或是向盘32供热或是从盘32除热。
在传热元件30作为一加热器的实施例中，热量由加热器生成并被直接传向盘32。盘32通过气体传导把热量传向基片。更为具体地说，顶面40与基片之间的很小间隙和较低气压使得气体具有接近于液体的粘滞特性。这种气体传导传热原理在美国专利申请08/145343之中有所说明，此申请在此全文引入作为参考。在基片S被加热到其所需的温度之后，惰性气体由一真空泵16从腔室12中抽空，而驱动装置36抬起顶盘22。当顶盘被抬起时基片S即被送回各支架18。腔室12的进口随后被打开，传送装置(未画出)从腔室12中取走基片。气体环境是用来加速热的传导的。真空环境是用来协助基片保持其温度的。真空环境还有利于加快气体充满安放区20的子封闭区的速度。
在传热元件30作为一冷却器的实施例中，传热过程简单地反转为通过气体传导把热量从基片S直接在表面40处传向盘32。元件30中的各冷却剂通道将连接于位于腔室12之外的一适当的换热器、压缩机或热泵(未画出)上。
本发明的优点之一是，在基片S上没有背面或底部真空抽吸。另一优点是，尽管安放区20中子封闭区的气体压力减小了，装置10仍然可以在与先前技术各种装置相同的时间内提供同样的热量。传向或传出基片S的传热速率(传热率)已知随着在装置中抵靠经过加热/冷却的盘的基片的压力的增大而增大。不过，不应使基片既承受来自安放区中气体的增大的压力，又承受保持在经过加热/冷却的盘上的真空。本发明不使用背压(真空吸持)或是顶压(来自加压气体)而迫使基片顶靠在盘32上。在一项优先实施例中，安放区20的子封闭区在供应气体和进行传热时具有一气体压力大约为50托尔(Torr)(大约0.1大气压)。参照图4可以看出，当气体压力达到大约50托尔时，装置10中的传热率在750托尔(1大气压)传热率的大约80％处达到稳定。这一低压使得安放区20的子封闭区既可较快地充满，也可较快地抽空。
各槽沟42的配置是为了使气体快速输进基片S与顶面40之间的间隙。更为具体地说，如果气体只是在间隙中输送的话，因为间隙小到例如大约0.1mm，而气体压力又低到大约50托尔，所以要花较长时间气体才能行进到基片的中心。间隙必须适当地分布，以便发生气体传导和防止气囊造成基片移动。因而，各槽沟42的配置可起到气体歧管的作用，很快地把气体传遍基片与顶面40之间的整个区域。因气体可以迅速地分布到间隙里面，所以可以较快地对基片进行加热而减少损坏基片的风险。不过，为了获得最佳传热，各槽沟42最好是占有顶面40总面积的5％或更少一些。
对加热/冷却系统进行单独控制是很困难的，因为各种不同型式和尺寸的基片有时是由同一装置予以调整的，而且当基片正被加热或冷却时，很难精确测定各个基片的温度。各个基片对于过热也是很敏感的。本发明通过使得加热/冷却系统保持在一比较恒定的温度上而提供一种较为均匀和可靠的传热系统。由于在真空之中的传热方式局限于辐射，对于小于300℃-400℃的温差它是非常缓慢的，所以直至气体被送进子封闭区，才发生基片与盘32之间的传热。由于各槽沟42的存在，气体迅速地分布于基片与顶面40之间的整个区域。因而，基片均匀地被加热/冷却，而且少有由于基片的过热敏性而造成基片损坏的风险。
现在参看图5，它表明本发明的另一实施例。装置110具有一腔室112、一气源114、一真空源116、一垂向驱动装置136、两块盘122和124、两个立柱126和127，以及两块换热盘121和132。底盘124连接于驱动装置136。顶盘122通过立柱126、127连接于底盘124上。立柱126、127穿过腔室112上的各孔眼。可伸缩的密封件138、139在底盘124与腔室112之间围绕立柱126、127设置。顶部换热盘121通过各隔热安装座129安装于顶盘122的底面。各支架118从顶部换热盘121的底部向下伸展以托持基片S。顶部换热盘121经由管线133被供以热量或冷却剂。
底盘124基本上类似于图2之中的盘24。不过，在此实施例中，围绕底盘124设置一封套133。封套133具有一连接于腔室112的底端和一带有密封件143的顶端。底盘132安装在底部换热元件130的上部。底部元件130通过管线131连接于一适当的加热或冷却源。底部元件130由各隔热安装座129支承在腔室112之中。
当驱动装置136从顶盘122的示于图5之中的开启位置向下推动顶盘122到一关闭位置时，密封件143被夹置在顶盘122与封套133之间。这在腔室112里面形成了子封闭区。基片S以一微小间隙位于盘132上的各支脚之上；此间隙例如大约0.1mm，在盘132的顶面与基片S的底部之间。装置110可以利用换热器121、132二者来加热或冷却基片S。这种双侧式传热可提高传热率。这种双侧式换热还较少可能造成基片S的热畸变；与单侧式换热相反。由于在基片S两侧之间的不均匀热应力所造成的、在一单侧式换热系统之中的最终温度梯度可能会使基片翘曲。因而，本发明的双侧式换热系统降低了由于不均匀加热或冷却而引起的基片损坏。
最好是，顶部换热器121的底面安置得非常靠近基片S的顶面；例如保持大约0.1mm的间隙。这样，就可由顶部和底部两套换热组件来提供气体传导换热。顶部换热盘121可以具有一些槽沟142，类似于图2和3之中的各槽沟，以便起到一种气体输送歧管的作用。气源114也可以连接于顶部换热盘121，如图示通过管线114a，把气体送到基片S上方。
在另外各项实施例中，可以采用别的压力。本发明也可用在一种包括基片的真空吸持的系统之中。可以配置任何适当型式的各槽沟结构。可以采用任何适当型式的加热和/或冷却系统。也可以配置任何适当型式的气源和真空源。同样可以配置任何适当型式的驱动装置或推动装置。
应当理解，以上说明只是本发明的例证。本技术领域中的熟练人员可以开发出各种替代型和改进型而不偏离本发明的精神。因而，本发明意欲包含属于所附各项权利要求范围以内的所有这种代换、改型和变更。

Claims (12)

1.一种用于改变一大体上为平面状的基片的温度的装置，此装置包括：
一腔室；
一盘，位于腔室之中，此盘具有一顶面，沿顶面带有一些槽沟，此顶面具有一在其上支承一基片的装置，在基片与顶面之间具有一微小间隙；
一种装置，用于把某种气体送进腔室；以及
一种装置，用于加热上述盘，其中热量通过气体传导在盘顶面与基片之间传输。
2.按照权利要求1所述的装置，其中各槽沟是细长的平行槽沟。
3.按照权利要求1所述的装置，其中各槽沟大约3mm宽和2mm深。
4.按照权利要求1所述的装置，其中槽沟包含交叉的槽沟。
5.按照权利要求1所述的装置，其中间隙大约为0.1mm。
6.按照权利要求1所述的装置，还包括用于从腔室中抽空气体的装置。
7.在一种用于改变一平面状基片的温度的装置中，此装置包括一基片安放腔室、一位于腔室之中的具有一换热表面的盘、以及一用于控制盘温度的装置，改进之处包括：
盘的传热表面具有沿着表面的一些槽沟，以便迅速地把气体分布在盘和一位于盘上并非常靠近盘的基片之间作气体传导。
8.按照权利要求7所述的装置，其中槽沟包括第一细长槽沟。
9.按照权利要求8所述的装置，其中槽沟包括与第一细长槽沟相交叉的第二环状槽沟。
10.一种在一种热调整装置中在一平面状基片与一盘之间传输热量的方法，此方法包括以下各步骤：
把基片放置在装置的腔室之中的盘上，盘具有一传热表面，在其上带有槽沟和用于把基片托持在离开传热表面某一距离处的支脚，间隔距离大约为0.05mm至0.5mm；
把气体送进腔室，此气体通过槽沟迅速地充满于基片与传热表面之间的整个区域；以及
通过气体传导在盘与基片之间传热。
11.按照权利要求10中所述的方法，其中传热步骤包括盘通过气体传导加热基片。
12.按照权利要求10所述的方法，其中传热步骤包括基片通过气体传导来加热盘。
CN96195957A 1995-06-07 1996-05-20 用惰性气体进行基片热调整的装置与方法 Pending CN1192265A (zh)

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100451745C (zh) * 2003-08-11 2009-01-14 周星工程股份有限公司 具有边缘框架的设备及其使用方法
CN103668123A (zh) * 2012-09-19 2014-03-26 甘志银 金属有机物化学气相沉积设备的载片盘
CN104928652A (zh) * 2015-04-27 2015-09-23 沈阳拓荆科技有限公司 一种圆形分布的凸台表面结构的可控温加热盘
CN105814243A (zh) * 2013-12-19 2016-07-27 Lpe公司 具有在基底支撑件上的弯曲的同心凹槽的衬托器
CN104515339B (zh) * 2013-09-26 2017-01-04 正达国际光电股份有限公司 冷却系统
CN106914375A (zh) * 2017-05-15 2017-07-04 惠州市忠邦电子有限公司 智能多头点胶系统

Families Citing this family (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5791895A (en) * 1994-02-17 1998-08-11 Novellus Systems, Inc. Apparatus for thermal treatment of thin film wafer
US5828070A (en) * 1996-02-16 1998-10-27 Eaton Corporation System and method for cooling workpieces processed by an ion implantation system
US5811762A (en) * 1996-09-25 1998-09-22 Taiwan Semiconductor Manufacturing Company, Ltd. Heater assembly with dual temperature control for use in PVD/CVD system
US6077157A (en) * 1996-11-18 2000-06-20 Applied Materials, Inc. Process chamber exhaust system
US6432203B1 (en) * 1997-03-17 2002-08-13 Applied Komatsu Technology, Inc. Heated and cooled vacuum chamber shield
JPH10284360A (ja) * 1997-04-02 1998-10-23 Hitachi Ltd 基板温度制御装置及び方法
US5911896A (en) * 1997-06-25 1999-06-15 Brooks Automation, Inc. Substrate heating apparatus with glass-ceramic panels and thin film ribbon heater element
US6054688A (en) * 1997-06-25 2000-04-25 Brooks Automation, Inc. Hybrid heater with ceramic foil serrated plate and gas assist
US6359264B1 (en) 1998-03-11 2002-03-19 Applied Materials, Inc. Thermal cycling module
US6215897B1 (en) 1998-05-20 2001-04-10 Applied Komatsu Technology, Inc. Automated substrate processing system
US6086362A (en) * 1998-05-20 2000-07-11 Applied Komatsu Technology, Inc. Multi-function chamber for a substrate processing system
US6787391B1 (en) 1998-06-19 2004-09-07 Matsushita Electric Industrial Co., Ltd. Method of forming bumps on a wafer utilizing a post-heating operation, and apparatus therefor
JP2000077318A (ja) * 1998-08-26 2000-03-14 Tokyo Electron Ltd 熱処理装置
US6610150B1 (en) 1999-04-02 2003-08-26 Asml Us, Inc. Semiconductor wafer processing system with vertically-stacked process chambers and single-axis dual-wafer transfer system
US6151794A (en) * 1999-06-02 2000-11-28 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for heat treating an object
US6450805B1 (en) * 1999-08-11 2002-09-17 Tokyo Electron Limited Hot plate cooling method and heat processing apparatus
US6345150B1 (en) 1999-11-30 2002-02-05 Wafermasters, Inc. Single wafer annealing oven
US6949143B1 (en) 1999-12-15 2005-09-27 Applied Materials, Inc. Dual substrate loadlock process equipment
JP3644880B2 (ja) * 2000-06-20 2005-05-11 東京エレクトロン株式会社 縦型熱処理装置
KR100960773B1 (ko) 2000-09-15 2010-06-01 어플라이드 머티어리얼스, 인코포레이티드 처리 장비용 더블 이중 슬롯 로드록
US6634882B2 (en) 2000-12-22 2003-10-21 Asm America, Inc. Susceptor pocket profile to improve process performance
US7316966B2 (en) 2001-09-21 2008-01-08 Applied Materials, Inc. Method for transferring substrates in a load lock chamber
US7033445B2 (en) * 2001-12-27 2006-04-25 Asm America, Inc. Gridded susceptor
JP2004055722A (ja) * 2002-07-18 2004-02-19 Renesas Technology Corp 洗浄装置、基板の洗浄方法および半導体装置の製造方法
US6709267B1 (en) 2002-12-27 2004-03-23 Asm America, Inc. Substrate holder with deep annular groove to prevent edge heat loss
JP3718688B2 (ja) * 2003-06-17 2005-11-24 東京エレクトロン株式会社 加熱装置
JP4540953B2 (ja) 2003-08-28 2010-09-08 キヤノンアネルバ株式会社 基板加熱装置及びマルチチャンバー基板処理装置
US20050067147A1 (en) * 2003-09-02 2005-03-31 Thayer John Gilbert Loop thermosyphon for cooling semiconductors during burn-in testing
US7129731B2 (en) * 2003-09-02 2006-10-31 Thermal Corp. Heat pipe with chilled liquid condenser system for burn-in testing
US7013956B2 (en) 2003-09-02 2006-03-21 Thermal Corp. Heat pipe evaporator with porous valve
US20050067146A1 (en) * 2003-09-02 2005-03-31 Thayer John Gilbert Two phase cooling system method for burn-in testing
US7207766B2 (en) 2003-10-20 2007-04-24 Applied Materials, Inc. Load lock chamber for large area substrate processing system
US7497414B2 (en) 2004-06-14 2009-03-03 Applied Materials, Inc. Curved slit valve door with flexible coupling
KR100601979B1 (ko) * 2004-12-30 2006-07-18 삼성전자주식회사 반도체 웨이퍼의 베이킹 장치
KR101463581B1 (ko) 2005-01-18 2014-11-20 에이에스엠 아메리카, 인코포레이티드 박막 성장용 반응 시스템
US8282768B1 (en) 2005-04-26 2012-10-09 Novellus Systems, Inc. Purging of porogen from UV cure chamber
US8137465B1 (en) 2005-04-26 2012-03-20 Novellus Systems, Inc. Single-chamber sequential curing of semiconductor wafers
US20100270004A1 (en) * 2005-05-12 2010-10-28 Landess James D Tailored profile pedestal for thermo-elastically stable cooling or heating of substrates
US7941039B1 (en) 2005-07-18 2011-05-10 Novellus Systems, Inc. Pedestal heat transfer and temperature control
US20070048877A1 (en) * 2005-08-26 2007-03-01 Karl Skold Method and device for preparing a biological sample for biological analyses
US7845891B2 (en) 2006-01-13 2010-12-07 Applied Materials, Inc. Decoupled chamber body
JP4827569B2 (ja) * 2006-03-23 2011-11-30 大日本スクリーン製造株式会社 基板支持構造とこれを用いた熱処理装置と基板支持構造に用いられるシート状物と基板支持構造の製造方法
US7665951B2 (en) 2006-06-02 2010-02-23 Applied Materials, Inc. Multiple slot load lock chamber and method of operation
US7845618B2 (en) 2006-06-28 2010-12-07 Applied Materials, Inc. Valve door with ball coupling
US8124907B2 (en) 2006-08-04 2012-02-28 Applied Materials, Inc. Load lock chamber with decoupled slit valve door seal compartment
US7960297B1 (en) 2006-12-07 2011-06-14 Novellus Systems, Inc. Load lock design for rapid wafer heating
US8052419B1 (en) 2007-11-08 2011-11-08 Novellus Systems, Inc. Closed loop temperature heat up and control utilizing wafer-to-heater pedestal gap modulation
US8033771B1 (en) 2008-12-11 2011-10-11 Novellus Systems, Inc. Minimum contact area wafer clamping with gas flow for rapid wafer cooling
JP2010181054A (ja) * 2009-02-03 2010-08-19 Sharp Corp 加熱装置および加熱方法
US8371567B2 (en) 2011-04-13 2013-02-12 Novellus Systems, Inc. Pedestal covers
US9835388B2 (en) 2012-01-06 2017-12-05 Novellus Systems, Inc. Systems for uniform heat transfer including adaptive portions
US9273413B2 (en) 2013-03-14 2016-03-01 Veeco Instruments Inc. Wafer carrier with temperature distribution control
US10347547B2 (en) 2016-08-09 2019-07-09 Lam Research Corporation Suppressing interfacial reactions by varying the wafer temperature throughout deposition
US10872804B2 (en) 2017-11-03 2020-12-22 Asm Ip Holding B.V. Apparatus and methods for isolating a reaction chamber from a loading chamber resulting in reduced contamination
US10872803B2 (en) 2017-11-03 2020-12-22 Asm Ip Holding B.V. Apparatus and methods for isolating a reaction chamber from a loading chamber resulting in reduced contamination
US11961756B2 (en) 2019-01-17 2024-04-16 Asm Ip Holding B.V. Vented susceptor
USD920936S1 (en) 2019-01-17 2021-06-01 Asm Ip Holding B.V. Higher temperature vented susceptor
USD914620S1 (en) 2019-01-17 2021-03-30 Asm Ip Holding B.V. Vented susceptor
US11404302B2 (en) 2019-05-22 2022-08-02 Asm Ip Holding B.V. Substrate susceptor using edge purging
US11764101B2 (en) 2019-10-24 2023-09-19 ASM IP Holding, B.V. Susceptor for semiconductor substrate processing
EP3916482A1 (en) * 2020-05-27 2021-12-01 ASML Netherlands B.V. Conditioning device and corresponding object handler, stage apparatus and lithographic apparatus
USD1031676S1 (en) 2020-12-04 2024-06-18 Asm Ip Holding B.V. Combined susceptor, support, and lift system

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3935646A (en) * 1974-11-15 1976-02-03 Millipore Corporation Gel electrophoresis slide drying
US4261762A (en) * 1979-09-14 1981-04-14 Eaton Corporation Method for conducting heat to or from an article being treated under vacuum
US4680061A (en) * 1979-12-21 1987-07-14 Varian Associates, Inc. Method of thermal treatment of a wafer in an evacuated environment
US4367114A (en) * 1981-05-06 1983-01-04 The Perkin-Elmer Corporation High speed plasma etching system
US4381965A (en) * 1982-01-06 1983-05-03 Drytek, Inc. Multi-planar electrode plasma etching
US4490111A (en) * 1982-09-23 1984-12-25 California Linear Circuits, Inc. Apparatus for making stacked high voltage rectifiers
US4666366A (en) * 1983-02-14 1987-05-19 Canon Kabushiki Kaisha Articulated arm transfer device
US4909701A (en) * 1983-02-14 1990-03-20 Brooks Automation Inc. Articulated arm transfer device
US4534816A (en) * 1984-06-22 1985-08-13 International Business Machines Corporation Single wafer plasma etch reactor
US4544446A (en) * 1984-07-24 1985-10-01 J. T. Baker Chemical Co. VLSI chemical reactor
US4597736A (en) * 1985-05-03 1986-07-01 Yield Engineering Systems, Inc. Method and apparatus for heating semiconductor wafers
DE3516490A1 (de) * 1985-05-08 1986-11-13 Elektroschmelzwerk Kempten GmbH, 8000 München Brennhilfsmittel
JPS62104049A (ja) * 1985-10-30 1987-05-14 Mitsubishi Electric Corp ベ−キング炉装置
US5013385A (en) * 1986-04-18 1991-05-07 General Signal Corporation Quad processor
US4715921A (en) * 1986-10-24 1987-12-29 General Signal Corporation Quad processor
US4770630A (en) * 1986-08-23 1988-09-13 Toray Industries, Inc. Heat treatment apparatus
US4721462A (en) * 1986-10-21 1988-01-26 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Active hold-down for heat treating
JPH0834205B2 (ja) * 1986-11-21 1996-03-29 株式会社東芝 ドライエツチング装置
US4951601A (en) * 1986-12-19 1990-08-28 Applied Materials, Inc. Multi-chamber integrated process system
JPH0521876Y2 (zh) * 1987-05-30 1993-06-04
JPS6455821A (en) * 1987-08-26 1989-03-02 Dainippon Screen Mfg Rapid cooling type heat treating apparatus
FR2628985B1 (fr) * 1988-03-22 1990-12-28 Labo Electronique Physique Reacteur d'epitaxie a paroi protegee contre les depots
DE58909880D1 (de) * 1988-05-24 2001-12-20 Unaxis Balzers Ag Vakuumanlage
DE3914065A1 (de) * 1989-04-28 1990-10-31 Leybold Ag Vorrichtung zur durchfuehrung von plasma-aetzverfahren
DE3915039A1 (de) * 1989-05-08 1990-11-15 Balzers Hochvakuum Hubtisch
US5177878A (en) * 1989-05-08 1993-01-12 U.S. Philips Corporation Apparatus and method for treating flat substrate under reduced pressure in the manufacture of electronic devices
GB9010833D0 (en) * 1990-05-15 1990-07-04 Electrotech Research Limited Workpiece support
US5252807A (en) * 1990-07-02 1993-10-12 George Chizinsky Heated plate rapid thermal processor
US5060354A (en) * 1990-07-02 1991-10-29 George Chizinsky Heated plate rapid thermal processor
US5304279A (en) * 1990-08-10 1994-04-19 International Business Machines Corporation Radio frequency induction/multipole plasma processing tool
US5180276A (en) * 1991-04-18 1993-01-19 Brooks Automation, Inc. Articulated arm transfer device
US5199483A (en) * 1991-05-15 1993-04-06 Applied Materials, Inc. Method and apparatus for cooling wafers
US5429498A (en) * 1991-12-13 1995-07-04 Tokyo Electron Sagami Kabushiki Kaisha Heat treatment method and apparatus thereof
US5447431A (en) * 1993-10-29 1995-09-05 Brooks Automation, Inc. Low-gas temperature stabilization system
US5431700A (en) * 1994-03-30 1995-07-11 Fsi International, Inc. Vertical multi-process bake/chill apparatus

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100451745C (zh) * 2003-08-11 2009-01-14 周星工程股份有限公司 具有边缘框架的设备及其使用方法
CN103668123A (zh) * 2012-09-19 2014-03-26 甘志银 金属有机物化学气相沉积设备的载片盘
CN104515339B (zh) * 2013-09-26 2017-01-04 正达国际光电股份有限公司 冷却系统
CN105814243A (zh) * 2013-12-19 2016-07-27 Lpe公司 具有在基底支撑件上的弯曲的同心凹槽的衬托器
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CN104928652A (zh) * 2015-04-27 2015-09-23 沈阳拓荆科技有限公司 一种圆形分布的凸台表面结构的可控温加热盘
CN106914375A (zh) * 2017-05-15 2017-07-04 惠州市忠邦电子有限公司 智能多头点胶系统

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EP0832407B1 (en) 2003-07-30
JPH11506821A (ja) 1999-06-15
WO1996041109A1 (en) 1996-12-19
JP4060356B2 (ja) 2008-03-12
DE69629297T2 (de) 2004-05-27
DE69629297D1 (de) 2003-09-04
EP0832407A4 (en) 2000-05-24
AU5754296A (en) 1996-12-30
EP0832407A1 (en) 1998-04-01
US5588827A (en) 1996-12-31
KR19990022729A (ko) 1999-03-25

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