CN119054203A - 栅极驱动装置及栅极驱动系统 - Google Patents

栅极驱动装置及栅极驱动系统 Download PDF

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Publication number
CN119054203A
CN119054203A CN202280095072.1A CN202280095072A CN119054203A CN 119054203 A CN119054203 A CN 119054203A CN 202280095072 A CN202280095072 A CN 202280095072A CN 119054203 A CN119054203 A CN 119054203A
Authority
CN
China
Prior art keywords
gate
control
voltage
gate driving
driving device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280095072.1A
Other languages
English (en)
Chinese (zh)
Inventor
高宫真
畑胜裕
堀井康平
田中香次
渡部毅代登
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
University of Tokyo NUC
Original Assignee
Mitsubishi Electric Corp
University of Tokyo NUC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp, University of Tokyo NUC filed Critical Mitsubishi Electric Corp
Publication of CN119054203A publication Critical patent/CN119054203A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6877—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the control circuit comprising active elements different from those used in the output circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H03K17/163—Soft switching
    • H03K17/164—Soft switching using parallel switching arrangements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0036—Means reducing energy consumption
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0063—High side switches, i.e. the higher potential [DC] or life wire [AC] being directly connected to the switch and not via the load
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0072—Low side switches, i.e. the lower potential [DC] or neutral wire [AC] being directly connected to the switch and not via the load

Landscapes

  • Power Conversion In General (AREA)
CN202280095072.1A 2022-04-28 2022-04-28 栅极驱动装置及栅极驱动系统 Pending CN119054203A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/019327 WO2023209966A1 (ja) 2022-04-28 2022-04-28 ゲート駆動装置、および、ゲート駆動システム

Publications (1)

Publication Number Publication Date
CN119054203A true CN119054203A (zh) 2024-11-29

Family

ID=88518156

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280095072.1A Pending CN119054203A (zh) 2022-04-28 2022-04-28 栅极驱动装置及栅极驱动系统

Country Status (5)

Country Link
US (1) US20250253846A1 (https=)
JP (1) JP7833030B2 (https=)
CN (1) CN119054203A (https=)
DE (1) DE112022007109T5 (https=)
WO (1) WO2023209966A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119070598B (zh) * 2024-11-06 2025-05-27 杭州飞仕得科技股份有限公司 驱动电源装置及自动化测试设备

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005217774A (ja) * 2004-01-29 2005-08-11 Fujitsu Ten Ltd スイッチング回路
CN107112988B (zh) * 2014-11-07 2018-05-04 贝能思科技有限公司 带有预防交叉导通电路的开关驱动器
US9793890B2 (en) 2015-05-07 2017-10-17 Infineon Technologies Austria Ag System and method for a switch transistor driver
JP6346207B2 (ja) 2016-01-28 2018-06-20 国立大学法人 東京大学 ゲート駆動装置
JP7350702B2 (ja) * 2020-09-15 2023-09-26 株式会社東芝 駆動制御回路

Also Published As

Publication number Publication date
JPWO2023209966A1 (https=) 2023-11-02
JP7833030B2 (ja) 2026-03-18
US20250253846A1 (en) 2025-08-07
WO2023209966A1 (ja) 2023-11-02
DE112022007109T5 (de) 2025-02-20

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