JPWO2023209966A1 - - Google Patents

Info

Publication number
JPWO2023209966A1
JPWO2023209966A1 JP2024517775A JP2024517775A JPWO2023209966A1 JP WO2023209966 A1 JPWO2023209966 A1 JP WO2023209966A1 JP 2024517775 A JP2024517775 A JP 2024517775A JP 2024517775 A JP2024517775 A JP 2024517775A JP WO2023209966 A1 JPWO2023209966 A1 JP WO2023209966A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2024517775A
Other languages
Japanese (ja)
Other versions
JP7833030B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2023209966A1 publication Critical patent/JPWO2023209966A1/ja
Application granted granted Critical
Publication of JP7833030B2 publication Critical patent/JP7833030B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6877Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the control circuit comprising active elements different from those used in the output circuit
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16Modifications for eliminating interference voltages or currents
    • H03K17/161Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H03K17/163Soft switching
    • H03K17/164Soft switching using parallel switching arrangements
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16Modifications for eliminating interference voltages or currents
    • H03K17/168Modifications for eliminating interference voltages or currents in composite switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K2217/00Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0036Means reducing energy consumption
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K2217/00Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0063High side switches, i.e. the higher potential [DC] or life wire [AC] being directly connected to the switch and not via the load
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K2217/00Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0072Low side switches, i.e. the lower potential [DC] or neutral wire [AC] being directly connected to the switch and not via the load
JP2024517775A 2022-04-28 2022-04-28 ゲート駆動装置、および、ゲート駆動システム Active JP7833030B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/019327 WO2023209966A1 (ja) 2022-04-28 2022-04-28 ゲート駆動装置、および、ゲート駆動システム

Publications (2)

Publication Number Publication Date
JPWO2023209966A1 true JPWO2023209966A1 (https=) 2023-11-02
JP7833030B2 JP7833030B2 (ja) 2026-03-18

Family

ID=88518156

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024517775A Active JP7833030B2 (ja) 2022-04-28 2022-04-28 ゲート駆動装置、および、ゲート駆動システム

Country Status (5)

Country Link
US (1) US20250253846A1 (https=)
JP (1) JP7833030B2 (https=)
CN (1) CN119054203A (https=)
DE (1) DE112022007109T5 (https=)
WO (1) WO2023209966A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119070598B (zh) * 2024-11-06 2025-05-27 杭州飞仕得科技股份有限公司 驱动电源装置及自动化测试设备

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005217774A (ja) * 2004-01-29 2005-08-11 Fujitsu Ten Ltd スイッチング回路
US20160134272A1 (en) * 2014-11-07 2016-05-12 Balanstring Technology, Llc Switch Driver With a Low-Cost Cross-Conduction-Preventing Circuit
US20160329883A1 (en) * 2015-05-07 2016-11-10 Infineon Technologies Austria Ag System and Method for a Switch Transistor Driver
JP2022048476A (ja) * 2020-09-15 2022-03-28 株式会社東芝 駆動制御回路

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6346207B2 (ja) 2016-01-28 2018-06-20 国立大学法人 東京大学 ゲート駆動装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005217774A (ja) * 2004-01-29 2005-08-11 Fujitsu Ten Ltd スイッチング回路
US20160134272A1 (en) * 2014-11-07 2016-05-12 Balanstring Technology, Llc Switch Driver With a Low-Cost Cross-Conduction-Preventing Circuit
US20160329883A1 (en) * 2015-05-07 2016-11-10 Infineon Technologies Austria Ag System and Method for a Switch Transistor Driver
JP2022048476A (ja) * 2020-09-15 2022-03-28 株式会社東芝 駆動制御回路

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
RYUNOSUKE KATADA 他: "Digital Gate Driving(DGD) is Double-Edged Sword: How to Avoid Huge Voltage Overshoots Caused by DGD", 2021 IEEE ENERGYCONVERSION CONGRESS AND EXPOSITION(ECCE), JPN6025048432, 16 November 2021 (2021-11-16), pages 5412 - 5416, ISSN: 0005744764 *

Also Published As

Publication number Publication date
JP7833030B2 (ja) 2026-03-18
US20250253846A1 (en) 2025-08-07
CN119054203A (zh) 2024-11-29
WO2023209966A1 (ja) 2023-11-02
DE112022007109T5 (de) 2025-02-20

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