DE112022007109T5 - Gate-Ansteuervorrichtung und Gate-Ansteuersystem - Google Patents

Gate-Ansteuervorrichtung und Gate-Ansteuersystem Download PDF

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Publication number
DE112022007109T5
DE112022007109T5 DE112022007109.5T DE112022007109T DE112022007109T5 DE 112022007109 T5 DE112022007109 T5 DE 112022007109T5 DE 112022007109 T DE112022007109 T DE 112022007109T DE 112022007109 T5 DE112022007109 T5 DE 112022007109T5
Authority
DE
Germany
Prior art keywords
gate
control device
signal
output
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112022007109.5T
Other languages
German (de)
English (en)
Inventor
Makoto Takamiya
Katsuhiro HATA
Kohei Horii
Koji Tanaka
Kiyoto Watabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
University of Tokyo NUC
Original Assignee
Mitsubishi Electric Corp
University of Tokyo NUC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp, University of Tokyo NUC filed Critical Mitsubishi Electric Corp
Publication of DE112022007109T5 publication Critical patent/DE112022007109T5/de
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6877—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the control circuit comprising active elements different from those used in the output circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H03K17/163—Soft switching
    • H03K17/164—Soft switching using parallel switching arrangements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0036—Means reducing energy consumption
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0063—High side switches, i.e. the higher potential [DC] or life wire [AC] being directly connected to the switch and not via the load
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0072—Low side switches, i.e. the lower potential [DC] or neutral wire [AC] being directly connected to the switch and not via the load

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  • Power Conversion In General (AREA)
DE112022007109.5T 2022-04-28 2022-04-28 Gate-Ansteuervorrichtung und Gate-Ansteuersystem Pending DE112022007109T5 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/019327 WO2023209966A1 (ja) 2022-04-28 2022-04-28 ゲート駆動装置、および、ゲート駆動システム

Publications (1)

Publication Number Publication Date
DE112022007109T5 true DE112022007109T5 (de) 2025-02-20

Family

ID=88518156

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112022007109.5T Pending DE112022007109T5 (de) 2022-04-28 2022-04-28 Gate-Ansteuervorrichtung und Gate-Ansteuersystem

Country Status (5)

Country Link
US (1) US20250253846A1 (https=)
JP (1) JP7833030B2 (https=)
CN (1) CN119054203A (https=)
DE (1) DE112022007109T5 (https=)
WO (1) WO2023209966A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119070598B (zh) * 2024-11-06 2025-05-27 杭州飞仕得科技股份有限公司 驱动电源装置及自动化测试设备

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017135589A (ja) 2016-01-28 2017-08-03 国立大学法人 東京大学 ゲート駆動装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005217774A (ja) * 2004-01-29 2005-08-11 Fujitsu Ten Ltd スイッチング回路
CN107112988B (zh) * 2014-11-07 2018-05-04 贝能思科技有限公司 带有预防交叉导通电路的开关驱动器
US9793890B2 (en) 2015-05-07 2017-10-17 Infineon Technologies Austria Ag System and method for a switch transistor driver
JP7350702B2 (ja) * 2020-09-15 2023-09-26 株式会社東芝 駆動制御回路

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017135589A (ja) 2016-01-28 2017-08-03 国立大学法人 東京大学 ゲート駆動装置

Also Published As

Publication number Publication date
JPWO2023209966A1 (https=) 2023-11-02
JP7833030B2 (ja) 2026-03-18
US20250253846A1 (en) 2025-08-07
CN119054203A (zh) 2024-11-29
WO2023209966A1 (ja) 2023-11-02

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