JP7833030B2 - ゲート駆動装置、および、ゲート駆動システム - Google Patents

ゲート駆動装置、および、ゲート駆動システム

Info

Publication number
JP7833030B2
JP7833030B2 JP2024517775A JP2024517775A JP7833030B2 JP 7833030 B2 JP7833030 B2 JP 7833030B2 JP 2024517775 A JP2024517775 A JP 2024517775A JP 2024517775 A JP2024517775 A JP 2024517775A JP 7833030 B2 JP7833030 B2 JP 7833030B2
Authority
JP
Japan
Prior art keywords
gate
level
control
voltage
switching element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2024517775A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2023209966A1 (https=
Inventor
真 高宮
勝裕 畑
康平 堀井
香次 田中
毅代登 渡部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
University of Tokyo NUC
Original Assignee
Mitsubishi Electric Corp
University of Tokyo NUC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp, University of Tokyo NUC filed Critical Mitsubishi Electric Corp
Publication of JPWO2023209966A1 publication Critical patent/JPWO2023209966A1/ja
Application granted granted Critical
Publication of JP7833030B2 publication Critical patent/JP7833030B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H03K17/163—Soft switching
    • H03K17/164—Soft switching using parallel switching arrangements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6877—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the control circuit comprising active elements different from those used in the output circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0036—Means reducing energy consumption
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0063—High side switches, i.e. the higher potential [DC] or life wire [AC] being directly connected to the switch and not via the load
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0072—Low side switches, i.e. the lower potential [DC] or neutral wire [AC] being directly connected to the switch and not via the load

Landscapes

  • Power Conversion In General (AREA)
JP2024517775A 2022-04-28 2022-04-28 ゲート駆動装置、および、ゲート駆動システム Active JP7833030B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/019327 WO2023209966A1 (ja) 2022-04-28 2022-04-28 ゲート駆動装置、および、ゲート駆動システム

Publications (2)

Publication Number Publication Date
JPWO2023209966A1 JPWO2023209966A1 (https=) 2023-11-02
JP7833030B2 true JP7833030B2 (ja) 2026-03-18

Family

ID=88518156

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024517775A Active JP7833030B2 (ja) 2022-04-28 2022-04-28 ゲート駆動装置、および、ゲート駆動システム

Country Status (5)

Country Link
US (1) US20250253846A1 (https=)
JP (1) JP7833030B2 (https=)
CN (1) CN119054203A (https=)
DE (1) DE112022007109T5 (https=)
WO (1) WO2023209966A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119070598B (zh) * 2024-11-06 2025-05-27 杭州飞仕得科技股份有限公司 驱动电源装置及自动化测试设备

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005217774A (ja) 2004-01-29 2005-08-11 Fujitsu Ten Ltd スイッチング回路
US20160134272A1 (en) 2014-11-07 2016-05-12 Balanstring Technology, Llc Switch Driver With a Low-Cost Cross-Conduction-Preventing Circuit
US20160329883A1 (en) 2015-05-07 2016-11-10 Infineon Technologies Austria Ag System and Method for a Switch Transistor Driver
JP2022048476A (ja) 2020-09-15 2022-03-28 株式会社東芝 駆動制御回路

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6346207B2 (ja) 2016-01-28 2018-06-20 国立大学法人 東京大学 ゲート駆動装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005217774A (ja) 2004-01-29 2005-08-11 Fujitsu Ten Ltd スイッチング回路
US20160134272A1 (en) 2014-11-07 2016-05-12 Balanstring Technology, Llc Switch Driver With a Low-Cost Cross-Conduction-Preventing Circuit
US20160329883A1 (en) 2015-05-07 2016-11-10 Infineon Technologies Austria Ag System and Method for a Switch Transistor Driver
JP2022048476A (ja) 2020-09-15 2022-03-28 株式会社東芝 駆動制御回路

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Ryunosuke Katada 他，Digital Gate Driving(DGD) is Double-Edged Sword: How to Avoid Huge Voltage Overshoots Caused by DGD for GaN FETs，2021 IEEE EnergyConversion Congress and Exposition(ECCE)，2021年11月16日，pp.5412-5416

Also Published As

Publication number Publication date
JPWO2023209966A1 (https=) 2023-11-02
US20250253846A1 (en) 2025-08-07
CN119054203A (zh) 2024-11-29
WO2023209966A1 (ja) 2023-11-02
DE112022007109T5 (de) 2025-02-20

Similar Documents

Publication Publication Date Title
KR101050696B1 (ko) 전압 구동형 소자를 구동시키는 구동 장치
JP6934087B2 (ja) ゲート駆動回路
JP2007505544A (ja) 半導体スイッチの高周波制御
KR20060059996A (ko) 제어 회로 및 공진 드라이버 회로 동작 방법
JP2022135911A (ja) バイポーラパルス電圧ゲートドライバ
JP2020124092A (ja) スイッチング回路
JP7833030B2 (ja) ゲート駆動装置、および、ゲート駆動システム
JP2020195213A (ja) スイッチングトランジスタの駆動回路
KR100687936B1 (ko) 전자기기 및 전원회로
US6813169B2 (en) Inverter device capable of reducing through current
JP4909684B2 (ja) 半導体装置
CN111869068B (zh) 开关装置以及开关装置的控制方法
JP2014079086A (ja) 電圧駆動型半導体素子の駆動回路
CN121217117A (zh) 栅极驱动器和开关装置
US20250015798A1 (en) Gate driver circuit
KR20190108785A (ko) 전원 변환기, 스위칭 소자 구동 장치 및 부하 구동 장치
JPH10210736A (ja) 降圧型ｄｃ−ｄｃコンバータ
KR101841159B1 (ko) 스위칭 게이트 드라이브
JP2004088892A (ja) 絶縁ゲート型半導体素子のゲート回路
JP2026046705A (ja) インバータ装置
WO2024154283A1 (ja) ゲートドライブ回路及び半導体装置
EP4664761A1 (en) Resonant mode gate driver and control apparatus
CN116722730A (zh) 驱动电路、开关转换器以及功率开关电路控制方法
JP2026000286A (ja) アクティブゲート駆動回路およびその動作方法
JP3633540B2 (ja) 降圧コンバータおよび降圧コンバータのｆｅｔ駆動方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20241128

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20250130

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20250701

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250822

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20251202

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20260129

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20260130

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20260210

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20260306

R150 Certificate of patent or registration of utility model

Ref document number: 7833030

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150