CN1187189C - 包覆有贵金属的复合金属线和半导体封装组件及制造方法 - Google Patents

包覆有贵金属的复合金属线和半导体封装组件及制造方法 Download PDF

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CN1187189C
CN1187189C CNB998109401A CN99810940A CN1187189C CN 1187189 C CN1187189 C CN 1187189C CN B998109401 A CNB998109401 A CN B998109401A CN 99810940 A CN99810940 A CN 99810940A CN 1187189 C CN1187189 C CN 1187189C
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metal wire
core
composite
composite metal
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CN1318011A (zh
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J·M·佐伊恩蒂恩斯
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Heraeus Materials Singapore Pte Ltd
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Kulicke and Soffa Investments Inc
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C18/31—Coating with metals
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Abstract

本发明公开了一种复合金属线，其特征在于：一个贵金属环形部分焊接到包含导电非贵金属的金属线芯部上。本发明还公开了一种制造复合金属线的方法和一种具有至少一个与复合金属线相连的导线的半导体封装组件。

Description

包覆有贵金属的复合金属线和半导体封装组件及制造方法
技术领域
本发明涉及一种导电的复合贵金属线，其中，非贵金属芯部由贵金属环形部分所包覆。具体的是，本发明涉及一种由非贵金属芯部材料和贵金属复合挤压而成的复合金属线。本发明还涉及一种制造复合金属线的方法，该复合金属线的芯部包含非贵金属，并通过非贵金属芯部材料与贵金属的复合挤压而包覆有贵金属环形部分。
背景技术
半导体封装向小间距、长跨距和低封装成本的发展还远远不能满足现代金连接金属线技术的需要。金属线弹性模量、成本和强度要求使用比普通所用的4N金合金更为复杂的金属线材料。
未来的连接金属线需要以约20微米直径的金属线在大约5000微米的跨距上满足大约50微米间距的要求。连接金属线的弯曲和倾斜会影响这种结构。一条金属线相对于另一条金属线的偏移量应限制在大约30微米范围内。使相邻金属线之间产生短路的相对变形应小于0.005％，而且这是一种弹性变形。4N金合金比纯铜具有较高的弹性模量，但铜基连接金属线合金并没有满足未来这种对足够弹性模量的需求。
在弹性模量、电阻率、密度和成本方面，铜是一种理想的连接金属线。但是，氧化影响和较高的连接成本妨碍了铜成为一种通用的连接金属线材料。
US5097100公开了一种镀有贵金属的铜金属线。直径约为44-56微米的拉制铜金属线电镀有金，其表面可经冷拉来硬化其镀金层。
但是，却不可能在合理的价格范围内均匀地电镀具有足够纯度的镀金层。US5097100所公开的技术不能使金充分地镀覆在铜制芯部。该发明所公开的其它的金属镀覆技术包括无电敷镀、汽相淀积、溅镀、浸镀等，也存在同样的问题。另外，这些技术都不能将4N金合金连接金属线包皮包覆在铜金属线芯部。
US5097100公开了铜和金可共同进行拉制，但并没有给出怎样来制得微米尺寸的金属线，更不用说给出一个实际生产的例子了。因此，仍然需要提供一种复合包金铜金属线以合理的价格来满足半导体工业未来的性能要求。
发明内容
本发明就满足了这种需求。本发明的复合金属线具有恒定直径的非贵金属芯部和牢固地敷在芯部上的均匀厚度的贵金属层，这种复合金属线可通过在拉制金属线之前在非贵金属芯部上形成贵金属层来较为经济地进行生产。
因此，根据本发明的一个方面，复合金属线的特征在于：贵金属环形部分环绕着包含导电非贵金属的金属线芯部，并具有由贵金属构成的金属线的连接性能。
即一种由复合挤压型材拉制而成的复合金属线，其直径大于15微米且小于100微米，并且由一种环绕着金属线芯部的4N金合金环形部分构成，该金属线芯部包含导电的非贵金属，所述复合金属线具有以下至少一种性能：a)1.70×10-6Ohm·cm至2.00×10-6Ohm·cm的电阻率；b)95GPa至120GPa的弹性模量；以及c)9.0g/cc至15.0g/cc的复合密度。
铜是一种优选的非贵金属，最好，金属线芯部主要由铜构成。贵金属优选为金，最好，金的纯度大于90％。纯度优选大于99％，更好是大于99.99％。最好，金是一种金合金，其中，对金进行掺杂，以使金/铜复合材料在拉制时可较好地变形并使复合金属线具有良好的连接性能，例如，金掺杂有小于30ppm的钙、小于20ppm的铍和小于50ppm的其它元素。特别优选的金合金是4N金。
本发明提供一种生产复合金属线的方法，其中，首先将非贵金属的金属线包敷贵金属，然后将其拉制成微米尺寸，而不是在微米尺寸金属线上形成贵金属层。因此，根据本发明的另一个方面，提供一种制造微米尺寸复合金属线的方法，该复合金属线主要由包含非贵金属的导电金属线芯部和附着在芯部上的贵金属环形部分构成，其中，所述方法包括：
提供直径为0.5-5mm的第一复合金属线，其中，第一复合金属线的特征是：贵金属环形部分环绕着包含导电非贵金属的金属线芯部；以及
将第一复合金属线拉拔成直径为15-75微米的第二复合金属线，第二复合金属线芯部所占横截面面积的比例基本上与第一复合金属线的芯部比例相同。
第一复合金属线由复合棒材拉制而成，复合棒材通过具有与贵金属环形部分焊接在一起的非贵金属芯部材料的贵金属坯料复合挤压而成。直径为20微米的复合金属线由毫米尺寸的复合金属线拉制而成，毫米尺寸的复合金属线由复合圆柱体棒材形成，复合圆柱体棒材则由复合坯料挤压而成，在从坯料变到棒材再变到金属线的过程中，复合体芯部与贵金属层的相对横截面面积保持不变。这就可直接将标称直径为20微米的复合金属线芯部比例控制到一个迄今闻所未闻的程度。因此，根据本发明的又一个方面，提供一种通过本发明方法生产的具有微米尺寸直径的复合金属线。
换句话说，对于所需要的芯部比例，例如直径为20微米的复合金属线，可通过具有相同的芯部材料相对比例的复合坯料来进行生产。通过生产一种具有复合金属线成品所需芯部材料比例的坯料，就可制造出具有所需芯部材料比例的微米尺寸复合金属线。
本发明的复合金属线具有半导体封装组件所需的弹性模量、强度和导电性，且具有价格优势。因此，根据本发明的另一个方面，提供一种半导体封装组件，其具有至少一个与本发明第二复合金属线相连的导线。直径为25微米的复合金属线在不破坏贵金属外层连续性的情况下进行楔入连接，为了避免非贵金属芯部的氧化，这是必须的。
本发明的复合金属线可用于其它需要使用细小连接金属线的场合。这种应用包括但不限于用于珠宝和阴极保护或者用于恶劣环境的金属线或金属缆线。本发明上述的和其它的目的、特征和优点可通过结合附图对本发明优选实施例所进行的描述中清楚地看出。
附图说明
图1是本发明实施例的复合金属线的横截面图；
图2是本发明实施例的复合坯料的侧视横截面图，所述复合坯料可经挤压而形成复合棒材，本发明的复合金属线可由上述复合棒材拉制而成；
图3是本发明实施例的半导体封装组件的透视图，表示与本发明复合金属线连接的导线；
图4是通过楔入半导体封装组件导线而与其相连接的本发明实施例的复合金线的纵向横截面SEM显微图；以及
图5是本发明实施例的复合金线与AW-14金线(一种4N金合金)的延伸率与破坏载荷性能的比较图。
具体实施方式
图1示出了本发明实施例的复合金属线，其中，包含非贵金属的芯部12与贵金属的环形部分14相连。(贵金属被定义为在空气中加热而不被氧化的金属，除金以外，还包括铂、钯、银或类似金属。)R表示由芯部12和环形部分14构成的金属线10的半径，而r表示芯部12的半径。芯部材料12相对于环形部分14和金属线10的量表示为由横截面面积度量的″部比率”，它是r与R比值(r/R)的函数。
连接通过加热加压而成。所施加的热量和压力根据所用的非贵金属或金属合金芯部材料和贵金属或金属合金环形部分材料而定，冶金领域的普通技术人员可在进行适当试验的情况下很容易地进行确定。例如，对于铜或铜合金芯部和金或金合金环形部分，所采用的温度大于200℃，压力大于50kg/mm2。
金属线由通过图2所示的复合坯料20挤压而成的复合棒材拉制而成。例如，含铜的芯部金属圆柱体22包覆在套筒状的金中或形成中间层24的包覆层中。将形成的组件放置于带有端盖28和30的铜制挤压套26中，对所形成的坯料20进行焊接、抽空和密封处理。将坯料预热到200-700℃，最好是400-500℃，并在单位面积力为50-200kg/mm2、最好约为100-150kg/mm2的情况下进行直接挤压来形成直径适合于拉制金属线的挤压复合圆柱棒材。
挤压棒材经切头、清理并通过普通简单模进行拉拔而制成直径约为0.5-5mm、最好小于约3mm的复合金属线。最好通过腐蚀的方法去掉由挤压套形成的外表层，从而制成一卷带有铜芯的包金复合金属线，通过标准接合线工艺将其进一步拉制成直径小于100微米，最好是约15-75微米。芯部横截面面积比相对原先的复合坯料未发生变化，因此，金属线产品的芯部比例是由坯料结构决定的。
坯料的直径最好是25-100mm，这样进行挤压就较为经济。芯部、贵金属层和外表层的相对尺寸与坯料的尺寸成比例，也就是，通过选定尺寸来获得制造复合金属线所需的芯部比例。挤压套大约占整个坯料横截面的10-20％。套内由非贵金属芯部和中间贵金属层所限定的圆柱体的芯部横截面面积比大约为25-95％，最好大约是50-90％。
挤压压缩比(坯料横截面面积除以挤压棒材的横截面面积)最好约为10-100，更好是约为15-50。由坯料挤压而成的圆柱形棒材的直径大约为2-25mm。圆柱形棒材最好挤压成直径约为4-20mm。棒材与其挤压坯料具有相同的芯部比例。
为满足将来半导体工业的模量要求，非贵金属12或由坯料20的芯部圆柱体22制成的金属线10最好其弹性模量大于约95GPa。适当的芯部材料包括金属铜、镍和类似金属及其合金。芯部材料最好是具有高导电率和高拉延性的金属或金属合金。因此，芯部材料最好是铜或铜合金，它们还具有明显的价格优势。
楔形接合的芯部材料最好是无氧高纯铜(OFHC)。对于球形接合，芯部材料的熔点最好在与环形部分金属熔点相差5℃范围之内。对于金或金合金环形部分，芯部材料最好是具有该熔点的铜合金。更为有利的是，铜合金比纯铜的抗氧化性要高。最好，包金的铜芯复合金属线的电阻率大约为1.70×10-6Ohm·cm至2.00×10-6Ohm·cm，弹性模量大约为95-120GPa，复合密度大约为9.0-15.0g/cc。每种特性都超过了4N金线。
如上所述，构成连接于非贵金属芯部12的环形部分14的贵金属最好是纯度至少为90％的金，纯度优选至少为99％，更优选为至少99.99％。金最好是一种掺杂合金，以使复合材料可较好地变形并使复合金属线具有良好的连接性能。金合金最好掺杂有小于30ppm的钙、小于20ppm的铍和小于50ppm的其它元素。金合金最好是包含小于10ppm的钙和小于10ppm的铍。特别优选的金合金是4N金，最好是标称含有7.5ppm的铍、6.5ppm的钙和小于30ppm其它元素的4N金。
本发明的复合金属线通过普通的技术与半导体封装组件的导线相连。图3示出了半导体封装组件40，其中，导线42a、42b、42c等通过楔入接头44a、44b、44c等与金属线10a、10b、10c等相连。金属线10b的局部剖视图示出了由环形部分14b所包围的芯部12b。
本发明提供了一种比标准4N金合金连接金属线具有较高弹性模量、较高强度和较高导电率的复合连接金属线。复合连接金属线的贵金属含量名义上是普通金属线的一半，因此，复合金属线比等尺寸的4N金合金金属线便宜，而且复合金属线还保持了标准4N金合金的连接特性。
下面非限制性的例子可展示出本发明的某些特定方面。除非特别指出，所有的的比例和百分比都是重量百分比，所有的温度都是摄氏温度。
由本发明方法制成的复合金属线可用于半导体封装组件。例子
将800gAW-14(American Fine Wire，Ltd.，Willow Grove，Pa.)，含小于10ppm的Ca和Be以及小于20ppm的In和小于20ppm的Ge的4N金合金浇铸到直径为28mm的模中。浇铸过程是普通的分批浇铸，其包括在石墨坩埚中熔化合金并将熔融物浇铸到圆筒形的石墨模中。
对成品金锭进行钻孔，形成内径(ID)为18mm的中心孔，并将其外径(CD)加工到25mm。对成品管进行加工，使其长度为76mm。将OFHC级铜圆柱体加工成外径为18mm、长度为76mm的圆柱体。将铜圆柱体以小于1.0mm的误差装入金合金管中。
OFHC铜套的内径为25mm、外径为28mm、长度约为85mm。对坯料端盖进行加工以使其可装到铜套的端部。
然后，对坯料端盖进行电子束焊接来密封坯料。将坯料在450℃下预热1小时。将预热的坯料放置到也预热到450℃的50吨挤压机中。将坯料在48吨的标称工作挤压力下挤压到6.4mm的直径。
用研磨片对挤压物进行清理，并用水进行冲洗。切去坯料的头尾，并取得试样。通过普通的简单模拉制将所得的棒材拉制成1mm直径。将成品金属线放置到50％硝酸溶液中，通过化学的方法将挤压套产生的铜皮除去。腐蚀过的金属线用水进行冲洗，然后再用酒精进行冲洗。
再将金属线在王水(1份硝酸、3份盐酸和4份水)中酸洗大约10秒钟，以除去金属线表面上的金铜混合物。利用8-12％的标准压模工艺在标准多模拔丝机上并采用含油的水乳胶润滑剂将成品金属线拉拔到标称直径为25微米。金属线的拉延性是很好的，拉延长度超过5千米都不会断裂。
测量复合金属线的延伸率和破坏-载荷性能。如图5所示，在延伸率高于2％的情况下，直径为24.8微米的复合金属线比AW-14金合金的破坏载荷大约高20％(在大多数情况下，连接金属线的延伸率都大于2％)，在延伸率为4％时，其破坏载荷大约为14g。沿金属线的轴线铜制芯部是非常均匀的。在金属线最终直径为24.8微米时，铜制芯部的横截面的标准偏差仅有0.26％。
退火后，复合金属线的弹性模量约为108GPa，比AW-14约高26％。复合金属线的电阻率是2.0微欧姆·厘米，比AW-14大约低12％。复合金属线的测量电阻率与时间和温度的关系曲线表明在温度小于或等于200℃、时间高达500小时内电阻率增加很小。
在24.8微米的复合金属线上开始的楔入连接试验显示出较高的连接强度。图4示出了楔入连接复合金属线的半导体封装组件横截面的SEM显微图。楔形接头内的金皮保持连续。
本发明提供了一种适宜于用作连接金属线的高强度、柔性复合金属线，其具有一个包在均匀的贵金属环形部分内并与其相连的非贵金属芯部。通过采用铜或铜合金作为芯部材料，复合金属线就具有优选的弹性模量、强度和导电性，并且大大降低了成本。
上述的例子和对优选实施例的描述仅仅是示意性的，而不是限制性的，本发明的保护范围由权利要求书进行限定。在不脱离本发明权利要求书所限定的范围内，可作出多种变型和组合。不应当认为这些变型背离了本发明的宗旨和范围，而应当认为它们都包含在本发明的权利要求书中。

Claims (20)

1.一种由复合挤压型材拉制而成的复合金属线，其直径大于15微米且小于100微米，其特征在于，复合金属线由一种环绕着金属线芯部的4N金合金环形部分构成，该金属线芯部包含导电的非贵金属，所述复合金属线具有至少一种以下性能：
a)1.70×10-6Ohm·cm至2.00×10-6Ohm·cm的电阻率；
b)95GPa至120GPa的弹性模量；以及
c)9.0g/cc至15.0g/cc的复合密度。
2.根据权利要求1所述的复合金属线，其特征在于：所述芯部金属包括铜。
3.根据权利要求2所述的复合金属线，其特征在于：所述芯部金属由铜构成。
4.根据权利要求1所述的复合金属线，其特征在于：所述芯部占所述复合金属线的整个横截面面积的比例为25-95％。
5.根据权利要求1所述的复合金属线，其特征在于：所述直径为15-75微米。
6.根据权利要求1所述的复合金属线，其特征在于：所述4N金合金掺杂有小于30ppm的钙、小于20ppm的铍和小于50ppm的其它元素。
7.根据权利要求6所述的复合金属线，其特征在于：所述4N金合金包括小于10ppm的铍和小于10ppm的钙。
8.根据权利要求1所述的复合金属线，其特征在于：所述芯部金属和所述4N金合金的熔融温度差距在5℃范围内。
9.根据权利要求1所述的复合金属线，其特征在于：所述金属线的弹性模量大于95GPa。
10.一种半导体封装组件，包括接合到权利要求1所述的复合金属线上的至少一条导线。
11.根据权利要求10所述的半导体封装组件，其特征在于：所述导线楔入连接到所述复合金属线中。
12.根据权利要求11所述的半导体封装组件，其特征在于：所述复合金属线的芯部由铜构成。
13.一种制造微米尺寸复合金属线的方法，该复合金属线由一种环绕着金属线芯部且以冶金术方式附着于其上的4N金合金环形部分构成，该金属线芯部包含导电的非贵金属，其特征在于，所述方法包括以下步骤：
A)用力挤压复合坯料，该复合坯料由所述非贵金属的芯部、所述金合金的中间层以及外金属层构成，由此形成一个复合棒材，其中由通过挤压所述坯料形成的芯部和中间层所限定的圆柱体的芯部比例大体上与由所述坯料的芯部和中间层所限定的圆柱体的芯部比例相同；
B)由所述复合棒材拉制出直径为0.5-5mm的第一复合金属线，并且去除所述外金属层，其中，由所述复合棒材的芯部和中间层所限定的圆柱体的芯部比例大体上与由所述第一复合金属线所限定的芯部比例相同；以及
C)将第一复合金属线拉拔成直径为15-75微米的第二复合金属线，其中，第二复合金属线的芯部比例与第一复合金属线的芯部比例相同。
14.根据权利要求13所述的方法，其特征在于：所述非贵金属是铜。
15.根据权利要求13所述的方法，其特征在于：所述金合金包括掺杂有小于30ppm的钙、小于20ppm的铍和小于50ppm的其它元素的金。
16.根据权利要求15所述的方法，其特征在于：所述金合金包括掺杂有小于10ppm的铍和小于10ppm的钙的金。
17.根据权利要求13所述的方法，其特征在于：所述非贵金属和所述金合金的熔融温度差距在5℃范围以内。
18.根据权利要求13所述的方法，其特征在于：所述第一复合金属线的芯部占其整个横截面面积的比例为25-95％。
19.根据权利要求13所述的方法，其特征在于：在挤压之前，将所述坯料预热到200-700℃的温度。
20.根据权利要求13所述的方法，其特征在于：采用50kg/mm2至200kg/mm2之间的力来挤压所述坯料。
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