CN1187189C - 包覆有贵金属的复合金属线和半导体封装组件及制造方法 - Google Patents
包覆有贵金属的复合金属线和半导体封装组件及制造方法 Download PDFInfo
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- CN1187189C CN1187189C CNB998109401A CN99810940A CN1187189C CN 1187189 C CN1187189 C CN 1187189C CN B998109401 A CNB998109401 A CN B998109401A CN 99810940 A CN99810940 A CN 99810940A CN 1187189 C CN1187189 C CN 1187189C
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01032—Germanium [Ge]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/012—Semiconductor purity grades
- H01L2924/01202—2N purity grades, i.e. 99%
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/012—Semiconductor purity grades
- H01L2924/01204—4N purity grades, i.e. 99.99%
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/207—Diameter ranges
- H01L2924/20751—Diameter ranges larger or equal to 10 microns less than 20 microns
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/207—Diameter ranges
- H01L2924/20752—Diameter ranges larger or equal to 20 microns less than 30 microns
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/207—Diameter ranges
- H01L2924/20753—Diameter ranges larger or equal to 30 microns less than 40 microns
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/207—Diameter ranges
- H01L2924/20754—Diameter ranges larger or equal to 40 microns less than 50 microns
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/207—Diameter ranges
- H01L2924/20755—Diameter ranges larger or equal to 50 microns less than 60 microns
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/207—Diameter ranges
- H01L2924/20756—Diameter ranges larger or equal to 60 microns less than 70 microns
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/207—Diameter ranges
- H01L2924/20757—Diameter ranges larger or equal to 70 microns less than 80 microns
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Wire Bonding (AREA)
- Conductive Materials (AREA)
- Non-Insulated Conductors (AREA)
- Extrusion Of Metal (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/154,417 US6610930B1 (en) | 1998-09-16 | 1998-09-16 | Composite noble metal wire |
US09/154,417 | 1998-09-16 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1318011A CN1318011A (zh) | 2001-10-17 |
CN1187189C true CN1187189C (zh) | 2005-02-02 |
Family
ID=22551286
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB998109401A Expired - Fee Related CN1187189C (zh) | 1998-09-16 | 1999-09-16 | 包覆有贵金属的复合金属线和半导体封装组件及制造方法 |
Country Status (7)
Country | Link |
---|---|
US (2) | US6610930B1 (zh) |
EP (1) | EP1115565A1 (zh) |
JP (1) | JP2002524887A (zh) |
KR (1) | KR100706885B1 (zh) |
CN (1) | CN1187189C (zh) |
TW (1) | TWI238777B (zh) |
WO (1) | WO2000015429A1 (zh) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6610930B1 (en) * | 1998-09-16 | 2003-08-26 | Kulicke & Soffa Investments, Inc. | Composite noble metal wire |
AU2001269687A1 (en) * | 2000-05-09 | 2001-11-20 | Usf Filtration And Separations Group Inc. | Apparatus and method for drawing continuous fiber |
MY137479A (en) * | 2000-09-18 | 2009-01-30 | Nippon Steel Corp | Bonding wire for semiconductor device and method for producing the same |
US8382739B2 (en) * | 2003-12-02 | 2013-02-26 | Boston Scientific Scimed, Inc. | Composite medical device and method of forming |
DE102004043020B3 (de) * | 2004-09-06 | 2006-04-27 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH | Bonddraht und Bondverbindung |
CN100433221C (zh) * | 2006-03-03 | 2008-11-12 | 段沛林 | 铜铝复合型导电杆的制备方法 |
US20090125637A1 (en) * | 2007-11-09 | 2009-05-14 | Nokia Corporation | Method, Apparatus and Computer Program Product for Providing Data Management in a P2P Network |
US20110147038A1 (en) * | 2009-12-17 | 2011-06-23 | Honeywell International Inc. | Oxidation-resistant high temperature wires and methods for the making thereof |
JP5616739B2 (ja) * | 2010-10-01 | 2014-10-29 | 新日鉄住金マテリアルズ株式会社 | 複層銅ボンディングワイヤの接合構造 |
CN102226991B (zh) * | 2011-06-12 | 2012-11-28 | 徐云管 | 铜钯合金单晶键合丝及其制造方法 |
KR101451361B1 (ko) * | 2012-12-04 | 2014-10-15 | 희성금속 주식회사 | 반도체 패키지용 동 합금 본딩 와이어 |
CN103074554A (zh) * | 2012-12-27 | 2013-05-01 | 昆明贵金属研究所 | 金/银/铜合金新型复合丝材及其制备方法 |
US10950570B2 (en) | 2014-04-21 | 2021-03-16 | Nippon Steel Chemical & Material Co., Ltd. | Bonding wire for semiconductor device |
KR102162906B1 (ko) | 2015-02-26 | 2020-10-07 | 닛데쓰마이크로메탈가부시키가이샤 | 반도체 장치용 본딩 와이어 |
DE102016101619A1 (de) * | 2016-01-29 | 2017-08-03 | Biotronik Se & Co. Kg | Verfahren zur Herstellung einer Elektrodenleitung oder eines Katheters und dazugehöriges Halbzeug |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3471925A (en) * | 1965-11-17 | 1969-10-14 | Avco Corp | Composite superconductive conductor and method of manufacture |
US3622285A (en) | 1969-12-08 | 1971-11-23 | Leach & Garner Co | Composite wire or the like |
US3791028A (en) * | 1971-09-17 | 1974-02-12 | Ibm | Ultrasonic bonding of cubic crystal-structure metals |
US3918998A (en) * | 1973-03-19 | 1975-11-11 | Airco Inc | Method for producing superconducting wire and products of the same |
US4330329A (en) * | 1979-11-28 | 1982-05-18 | Tanaka Denshi Kogyo Kabushiki Kaisha | Gold bonding wire for semiconductor elements and the semiconductor element |
JPS5737405A (en) | 1980-08-19 | 1982-03-01 | Tanaka Precious Metal Ind | Clad wire material for accesory |
DE3134896C2 (de) | 1981-09-03 | 1985-03-28 | W.C. Heraeus Gmbh, 6450 Hanau | Kabelzuleitung für Herzschrittmacher-Elektroden |
JPS59219819A (ja) | 1983-05-27 | 1984-12-11 | 田中貴金属工業株式会社 | 多線束摺動接点用刷子線材 |
EP0241721B1 (en) * | 1986-03-18 | 1992-09-23 | Sumitomo Electric Industries, Ltd. | Conductor and method of producing the same |
JPS62278241A (ja) * | 1986-05-26 | 1987-12-03 | Shoei Kagaku Kogyo Kk | ボンデイングワイヤ |
EP0282286B2 (en) * | 1987-03-13 | 2013-06-05 | Kabushiki Kaisha Toshiba | Superconducting wire and method of manufacturing the same |
JPH01255233A (ja) | 1988-04-05 | 1989-10-12 | Kobe Steel Ltd | 複合ボンディングワイヤ |
JPH0344453A (ja) * | 1989-07-11 | 1991-02-26 | Furukawa Electric Co Ltd:The | 電子部品および機器用リード線の製造方法 |
US4970365A (en) | 1989-09-28 | 1990-11-13 | International Business Machines Corporation | Method and apparatus for bonding components leads to pads located on a non-rigid substrate |
DE9013722U1 (de) | 1990-10-02 | 1991-01-24 | Berkenhoff GmbH, 6301 Heuchelheim | Drahtelektrode |
US5097100A (en) * | 1991-01-25 | 1992-03-17 | Sundstrand Data Control, Inc. | Noble metal plated wire and terminal assembly, and method of making the same |
EP0704862B1 (en) * | 1994-09-30 | 2003-01-22 | Canon Kabushiki Kaisha | Method of manufacturing a superconducting wire |
US5592732A (en) * | 1994-10-26 | 1997-01-14 | Wisconsin Alumni Research Foundation | Method of making super conducting bonds for thin film devices |
JP3337049B2 (ja) * | 1995-05-17 | 2002-10-21 | 田中電子工業株式会社 | ボンディング用金線 |
US6610930B1 (en) * | 1998-09-16 | 2003-08-26 | Kulicke & Soffa Investments, Inc. | Composite noble metal wire |
-
1998
- 1998-09-16 US US09/154,417 patent/US6610930B1/en not_active Expired - Fee Related
-
1999
- 1999-09-16 WO PCT/US1999/021409 patent/WO2000015429A1/en active IP Right Grant
- 1999-09-16 JP JP2000569997A patent/JP2002524887A/ja not_active Withdrawn
- 1999-09-16 TW TW088115993A patent/TWI238777B/zh not_active IP Right Cessation
- 1999-09-16 KR KR1020017003230A patent/KR100706885B1/ko not_active IP Right Cessation
- 1999-09-16 CN CNB998109401A patent/CN1187189C/zh not_active Expired - Fee Related
- 1999-09-16 EP EP99948286A patent/EP1115565A1/en not_active Withdrawn
-
2003
- 2003-08-26 US US10/648,742 patent/US20040065468A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
TWI238777B (en) | 2005-09-01 |
JP2002524887A (ja) | 2002-08-06 |
WO2000015429A1 (en) | 2000-03-23 |
KR100706885B1 (ko) | 2007-04-11 |
CN1318011A (zh) | 2001-10-17 |
US6610930B1 (en) | 2003-08-26 |
KR20010079810A (ko) | 2001-08-22 |
WO2000015429A9 (en) | 2001-07-12 |
US20040065468A1 (en) | 2004-04-08 |
WO2000015429A8 (en) | 2000-06-08 |
EP1115565A1 (en) | 2001-07-18 |
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