CN118431888A - 光学部件和发光装置 - Google Patents
光学部件和发光装置 Download PDFInfo
- Publication number
- CN118431888A CN118431888A CN202410397802.4A CN202410397802A CN118431888A CN 118431888 A CN118431888 A CN 118431888A CN 202410397802 A CN202410397802 A CN 202410397802A CN 118431888 A CN118431888 A CN 118431888A
- Authority
- CN
- China
- Prior art keywords
- light
- wiring
- holding member
- conversion member
- optical component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 138
- 238000006243 chemical reaction Methods 0.000 claims abstract description 208
- 238000000605 extraction Methods 0.000 claims abstract description 37
- 238000001514 detection method Methods 0.000 claims abstract description 27
- 230000008859 change Effects 0.000 claims abstract description 10
- 239000004020 conductor Substances 0.000 claims abstract description 8
- 230000005284 excitation Effects 0.000 claims abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims description 105
- 239000002184 metal Substances 0.000 claims description 105
- 238000000034 method Methods 0.000 claims description 54
- 239000000463 material Substances 0.000 claims description 41
- 230000001681 protective effect Effects 0.000 claims description 26
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 20
- 230000017525 heat dissipation Effects 0.000 claims description 15
- 239000000919 ceramic Substances 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 11
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 10
- 238000012790 confirmation Methods 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 description 77
- 239000011521 glass Substances 0.000 description 30
- 230000004048 modification Effects 0.000 description 21
- 238000012986 modification Methods 0.000 description 21
- 238000010586 diagram Methods 0.000 description 17
- 238000005245 sintering Methods 0.000 description 15
- 238000010438 heat treatment Methods 0.000 description 13
- 230000005856 abnormality Effects 0.000 description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 9
- 239000000843 powder Substances 0.000 description 9
- 239000005416 organic matter Substances 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 8
- 238000002834 transmittance Methods 0.000 description 8
- 239000000470 constituent Substances 0.000 description 7
- 238000003860 storage Methods 0.000 description 7
- 238000000231 atomic layer deposition Methods 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 238000002844 melting Methods 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 230000005855 radiation Effects 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- -1 cerium-activated Yttrium Aluminum Garnet Chemical class 0.000 description 5
- 238000005304 joining Methods 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000009751 slip forming Methods 0.000 description 4
- 229910001128 Sn alloy Inorganic materials 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 239000011147 inorganic material Substances 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000002490 spark plasma sintering Methods 0.000 description 3
- 229910001936 tantalum oxide Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910000484 niobium oxide Inorganic materials 0.000 description 2
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910001570 bauxite Inorganic materials 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- IQDXNHZDRQHKEF-UHFFFAOYSA-N dialuminum;dicalcium;dioxido(oxo)silane Chemical compound [Al+3].[Al+3].[Ca+2].[Ca+2].[O-][Si]([O-])=O.[O-][Si]([O-])=O.[O-][Si]([O-])=O.[O-][Si]([O-])=O.[O-][Si]([O-])=O IQDXNHZDRQHKEF-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 229910052909 inorganic silicate Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000005355 lead glass Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0087—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for illuminating phosphorescent or fluorescent materials, e.g. using optical arrangements specifically adapted for guiding or shaping laser beams illuminating these materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
- H01S5/02326—Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02257—Out-coupling of light using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0239—Combinations of electrical or optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06233—Controlling other output parameters than intensity or frequency
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/06825—Protecting the laser, e.g. during switch-on/off, detection of malfunctioning or degradation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0071—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for beam steering, e.g. using a mirror outside the cavity to change the beam direction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02208—Mountings; Housings characterised by the shape of the housings
- H01S5/02216—Butterfly-type, i.e. with electrode pins extending horizontally from the housings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Lasers (AREA)
- Engineering & Computer Science (AREA)
- Optical Filters (AREA)
- Plasma & Fusion (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Engineering & Computer Science (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017249795 | 2017-12-26 | ||
| JP2017-249795 | 2017-12-26 | ||
| PCT/JP2018/046999 WO2019131439A1 (ja) | 2017-12-26 | 2018-12-20 | 光学部材、発光装置及び光学部材の製造方法 |
| CN201880083937.6A CN111512505B (zh) | 2017-12-26 | 2018-12-20 | 光学部件、发光装置以及光学部件的制造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201880083937.6A Division CN111512505B (zh) | 2017-12-26 | 2018-12-20 | 光学部件、发光装置以及光学部件的制造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN118431888A true CN118431888A (zh) | 2024-08-02 |
Family
ID=66950789
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202410397802.4A Pending CN118431888A (zh) | 2017-12-26 | 2018-12-20 | 光学部件和发光装置 |
| CN201880083937.6A Active CN111512505B (zh) | 2017-12-26 | 2018-12-20 | 光学部件、发光装置以及光学部件的制造方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201880083937.6A Active CN111512505B (zh) | 2017-12-26 | 2018-12-20 | 光学部件、发光装置以及光学部件的制造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (3) | US11108210B2 (https=) |
| EP (1) | EP3734778B1 (https=) |
| JP (2) | JP7319549B2 (https=) |
| CN (2) | CN118431888A (https=) |
| WO (1) | WO2019131439A1 (https=) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10587090B1 (en) * | 2015-12-31 | 2020-03-10 | Soraa Laser Diode, Inc. | Safe laser light |
| JP6702349B2 (ja) * | 2018-03-27 | 2020-06-03 | 日亜化学工業株式会社 | 発光装置 |
| FR3079623B1 (fr) * | 2018-03-29 | 2022-04-08 | St Microelectronics Grenoble 2 | Capot pour dispositif electronique et procede de fabrication |
| US11056855B2 (en) * | 2018-07-04 | 2021-07-06 | Namuga, Co., Ltd. | Beam projector module for performing eye-safety function using temperature, and control method thereof |
| DE102018120508A1 (de) * | 2018-08-22 | 2020-02-27 | Osram Opto Semiconductors Gmbh | Optoelektronische Vorrichtung und Verfahren zum Steuern einer optoelektronischen Vorrichtung |
| CN110175499B (zh) * | 2018-10-15 | 2024-09-03 | 华为技术有限公司 | 光学元件及其监测系统和方法、主动发光模组、终端 |
| TWI701882B (zh) * | 2018-11-08 | 2020-08-11 | 晶智達光電股份有限公司 | 雷射元件 |
| WO2020122815A1 (en) * | 2018-12-10 | 2020-06-18 | Ams Sensors Asia Pte. Ltd. | Light emitting module including enhanced eye-safety feature |
| DE102019104986A1 (de) * | 2019-02-27 | 2020-08-27 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils |
| US11205886B2 (en) * | 2019-03-12 | 2021-12-21 | Nichia Corporation | Method of manufacturing optical member, optical member, and light emitting device |
| CN114830466A (zh) * | 2019-12-20 | 2022-07-29 | 索尼半导体解决方案公司 | 发光装置和制造发光装置的方法 |
| JP7538399B2 (ja) | 2020-04-06 | 2024-08-22 | 日亜化学工業株式会社 | 発光装置、又は、光学部材 |
| US12212119B2 (en) * | 2020-04-23 | 2025-01-28 | Analog Devices International Unlimited Company | Laser system |
| JP7525775B2 (ja) * | 2020-06-05 | 2024-07-31 | 日亜化学工業株式会社 | 金属成膜部材の製造方法、金属成膜部材、波長変換部材、又は、発光装置 |
| JP7758960B2 (ja) * | 2020-06-08 | 2025-10-23 | 日亜化学工業株式会社 | 発光装置 |
| JP7553772B2 (ja) * | 2020-06-17 | 2024-09-19 | 日亜化学工業株式会社 | 光学部材、及び、発光装置 |
| JP7562071B2 (ja) * | 2021-01-27 | 2024-10-07 | 日亜化学工業株式会社 | 発光モジュール |
| JP2022190310A (ja) | 2021-06-14 | 2022-12-26 | セイコーエプソン株式会社 | 波長変換部材および発光装置 |
| JP2023047990A (ja) * | 2021-09-27 | 2023-04-06 | 日亜化学工業株式会社 | 光学部材、発光装置 |
| JP2023135681A (ja) * | 2022-03-16 | 2023-09-29 | 日亜化学工業株式会社 | 光学部材及び発光装置並びにそれらの製造方法 |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5708530A (en) * | 1996-03-29 | 1998-01-13 | Electronics Research & Service Organization | Multi-zoned dichroic mirror for liquid crystal projection system |
| US7728274B2 (en) * | 2007-03-30 | 2010-06-01 | Subrahmanyam Pilla | Imaging system with negative electron affinity photocathode |
| JP4946737B2 (ja) | 2007-09-03 | 2012-06-06 | セイコーエプソン株式会社 | 光源装置、照明装置、モニタ装置及び画像表示装置 |
| JP2009096653A (ja) * | 2007-10-15 | 2009-05-07 | Panasonic Electric Works Co Ltd | 色変換部材の製造方法 |
| JP2010024278A (ja) * | 2008-07-16 | 2010-02-04 | Stanley Electric Co Ltd | 蛍光体セラミック板およびそれを用いた発光素子 |
| JP2010057180A (ja) | 2008-08-30 | 2010-03-11 | Mitsubishi Digital Electronics America Inc | 破損したスクリーンの検出器 |
| KR101215342B1 (ko) * | 2010-09-20 | 2012-12-26 | 삼성전자주식회사 | 사이알론 형광체, 그 제조방법 및 이를 이용한 발광소자 패키지 |
| WO2012124522A1 (ja) * | 2011-03-15 | 2012-09-20 | シャープ株式会社 | 発光装置、照明装置、前照灯および車両 |
| JP5870736B2 (ja) * | 2012-02-16 | 2016-03-01 | コニカミノルタ株式会社 | 蛍光体分散液の製造方法、およびそれを用いてｌｅｄ装置を製造する方法 |
| JP2013168587A (ja) * | 2012-02-16 | 2013-08-29 | Sharp Corp | 発光装置、半導体レーザ素子、および照明装置 |
| JP2013168586A (ja) | 2012-02-16 | 2013-08-29 | Sharp Corp | 発光装置、半導体レーザ素子、車両用前照灯、および照明装置 |
| JP5975692B2 (ja) * | 2012-03-21 | 2016-08-23 | スタンレー電気株式会社 | 光源装置および照明装置 |
| US8931922B2 (en) * | 2012-03-22 | 2015-01-13 | Osram Sylvania Inc. | Ceramic wavelength-conversion plates and light sources including the same |
| CN104379987B (zh) * | 2012-08-02 | 2017-07-28 | 日亚化学工业株式会社 | 波长转换装置 |
| JP2014190823A (ja) | 2013-03-27 | 2014-10-06 | Sanyo Electric Co Ltd | 情報取得装置および物体検出装置 |
| JP6202313B2 (ja) * | 2013-09-20 | 2017-09-27 | カシオ計算機株式会社 | 蛍光発光装置及びプロジェクタ |
| JP6252982B2 (ja) * | 2014-02-06 | 2017-12-27 | 日本電気硝子株式会社 | ガラス部材及びその製造方法 |
| JP2016092288A (ja) * | 2014-11-07 | 2016-05-23 | スタンレー電気株式会社 | 光源装置及びこれを用いた照明装置 |
| JP2016122715A (ja) * | 2014-12-24 | 2016-07-07 | スタンレー電気株式会社 | 半導体発光装置及びその駆動方法 |
| JP6657559B2 (ja) | 2014-12-24 | 2020-03-04 | 日亜化学工業株式会社 | 発光装置およびその製造方法 |
| JP6380096B2 (ja) * | 2014-12-26 | 2018-08-29 | 日亜化学工業株式会社 | 発光装置 |
| JP2016177923A (ja) | 2015-03-19 | 2016-10-06 | ウシオ電機株式会社 | 蛍光光源装置 |
| US10330527B2 (en) * | 2015-04-01 | 2019-06-25 | Osram Gmbh | Device and method for light conversion device monitoring |
| DE102015213460A1 (de) | 2015-07-17 | 2017-01-19 | Osram Gmbh | Wellenlängenumwandlung von Primärlicht mittels eines Konversionskörpers |
| JP6225976B2 (ja) * | 2015-10-30 | 2017-11-08 | 日亜化学工業株式会社 | 発光装置 |
| JP6940749B2 (ja) * | 2016-04-28 | 2021-09-29 | 日亜化学工業株式会社 | 発光装置 |
| JP6493308B2 (ja) * | 2016-05-31 | 2019-04-03 | 日亜化学工業株式会社 | 発光装置 |
| JP6656088B2 (ja) * | 2016-06-01 | 2020-03-04 | アズビル株式会社 | 制御盤および交換ユニット |
| JP6862110B2 (ja) * | 2016-07-04 | 2021-04-21 | 株式会社小糸製作所 | 焼結体および発光装置 |
-
2018
- 2018-12-20 CN CN202410397802.4A patent/CN118431888A/zh active Pending
- 2018-12-20 EP EP18894540.6A patent/EP3734778B1/en active Active
- 2018-12-20 WO PCT/JP2018/046999 patent/WO2019131439A1/ja not_active Ceased
- 2018-12-20 JP JP2019561611A patent/JP7319549B2/ja active Active
- 2018-12-20 CN CN201880083937.6A patent/CN111512505B/zh active Active
- 2018-12-21 US US16/230,690 patent/US11108210B2/en active Active
-
2021
- 2021-07-29 US US17/388,728 patent/US11646544B2/en active Active
-
2023
- 2023-03-09 US US18/181,150 patent/US11984697B2/en active Active
- 2023-07-18 JP JP2023117100A patent/JP7614526B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2023126547A (ja) | 2023-09-07 |
| US11108210B2 (en) | 2021-08-31 |
| US20230216268A1 (en) | 2023-07-06 |
| EP3734778B1 (en) | 2024-02-14 |
| WO2019131439A1 (ja) | 2019-07-04 |
| JP7614526B2 (ja) | 2025-01-16 |
| EP3734778A4 (en) | 2021-10-13 |
| US20190199052A1 (en) | 2019-06-27 |
| CN111512505A (zh) | 2020-08-07 |
| JP7319549B2 (ja) | 2023-08-02 |
| US11984697B2 (en) | 2024-05-14 |
| JPWO2019131439A1 (ja) | 2021-01-21 |
| US11646544B2 (en) | 2023-05-09 |
| US20210359489A1 (en) | 2021-11-18 |
| CN111512505B (zh) | 2024-04-12 |
| EP3734778A1 (en) | 2020-11-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111512505B (zh) | 光学部件、发光装置以及光学部件的制造方法 | |
| US12348004B2 (en) | Light emitting device | |
| JP7206494B2 (ja) | 発光装置の製造方法、発光装置 | |
| JP7393685B2 (ja) | 光学部材及び発光装置 | |
| CN111834515B (zh) | 波长转换部件、波长转换部件的制造方法以及发光装置 | |
| JP2005011953A (ja) | 発光装置 | |
| US20240063348A1 (en) | Method of manufacturing wavelength converting member and method of manufacturing light emitting device | |
| CN116157932A (zh) | 半导体发光装置及半导体发光模块 | |
| US11626706B2 (en) | Method of manufacturing optical member, optical member, and light emitting device | |
| US20250300422A1 (en) | Method of manufacturing metal-coated member, metal-coated member, wavelength conversion member, and light emitting device | |
| JP7116333B2 (ja) | 発光装置 | |
| US20230118200A1 (en) | Optical member and light-emitting device | |
| US11631965B2 (en) | Light emitting device and optical part |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |