CN117897798A - 硅晶圆的清洗方法及制造方法、清洗液中的过氧化氢浓度的评估方法及管理方法 - Google Patents
硅晶圆的清洗方法及制造方法、清洗液中的过氧化氢浓度的评估方法及管理方法 Download PDFInfo
- Publication number
- CN117897798A CN117897798A CN202280059667.1A CN202280059667A CN117897798A CN 117897798 A CN117897798 A CN 117897798A CN 202280059667 A CN202280059667 A CN 202280059667A CN 117897798 A CN117897798 A CN 117897798A
- Authority
- CN
- China
- Prior art keywords
- cleaning
- concentration
- silicon wafer
- roughening
- cleaning liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 335
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 title claims abstract description 169
- 239000007788 liquid Substances 0.000 title claims abstract description 116
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 105
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 105
- 239000010703 silicon Substances 0.000 title claims abstract description 105
- 238000000034 method Methods 0.000 title claims abstract description 83
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 238000007788 roughening Methods 0.000 claims abstract description 119
- 238000011835 investigation Methods 0.000 claims abstract description 45
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims abstract description 34
- 239000000908 ammonium hydroxide Substances 0.000 claims abstract description 30
- 238000011156 evaluation Methods 0.000 claims abstract description 26
- 239000007864 aqueous solution Substances 0.000 claims abstract description 16
- 239000000243 solution Substances 0.000 claims description 40
- 238000012545 processing Methods 0.000 claims description 14
- 239000002245 particle Substances 0.000 claims description 13
- 238000007726 management method Methods 0.000 abstract description 6
- 235000012431 wafers Nutrition 0.000 description 143
- 235000011114 ammonium hydroxide Nutrition 0.000 description 26
- 239000000126 substance Substances 0.000 description 19
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 18
- 238000005530 etching Methods 0.000 description 16
- 229910052739 hydrogen Inorganic materials 0.000 description 13
- 238000007254 oxidation reaction Methods 0.000 description 11
- 239000000203 mixture Substances 0.000 description 9
- 230000003647 oxidation Effects 0.000 description 9
- 230000002940 repellent Effects 0.000 description 7
- 239000005871 repellent Substances 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000005498 polishing Methods 0.000 description 6
- 230000005660 hydrophilic surface Effects 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 238000005406 washing Methods 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 238000002835 absorbance Methods 0.000 description 4
- 230000001276 controlling effect Effects 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000004630 atomic force microscopy Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000386 microscopy Methods 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Weting (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021144950A JP7571691B2 (ja) | 2021-09-06 | シリコンウェーハの洗浄方法および製造方法、並びに洗浄液中の過酸化水素濃度評価方法および過酸化水素濃度管理方法 | |
| JP2021-144950 | 2021-09-06 | ||
| PCT/JP2022/028175 WO2023032497A1 (ja) | 2021-09-06 | 2022-07-20 | シリコンウェーハの洗浄方法および製造方法、並びに洗浄液中の過酸化水素濃度評価方法および過酸化水素濃度管理方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117897798A true CN117897798A (zh) | 2024-04-16 |
Family
ID=85412087
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202280059667.1A Pending CN117897798A (zh) | 2021-09-06 | 2022-07-20 | 硅晶圆的清洗方法及制造方法、清洗液中的过氧化氢浓度的评估方法及管理方法 |
Country Status (4)
| Country | Link |
|---|---|
| KR (1) | KR20240051142A (ja) |
| CN (1) | CN117897798A (ja) |
| TW (1) | TW202312266A (ja) |
| WO (1) | WO2023032497A1 (ja) |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0766195A (ja) | 1993-06-29 | 1995-03-10 | Sumitomo Sitix Corp | シリコンウェーハの表面酸化膜形成方法 |
| JPH07240394A (ja) | 1994-02-28 | 1995-09-12 | Sumitomo Sitix Corp | 半導体ウェーハの表面洗浄方法 |
| JPH0817775A (ja) * | 1994-06-28 | 1996-01-19 | Matsushita Electron Corp | 半導体装置の洗浄方法 |
| JPH10183185A (ja) * | 1996-12-24 | 1998-07-14 | Hitachi Ltd | 洗浄液、その配合決定方法ならびに製造方法、洗浄方法、および、半導体基板の製造方法 |
| US5800626A (en) | 1997-02-18 | 1998-09-01 | International Business Machines Corporation | Control of gas content in process liquids for improved megasonic cleaning of semiconductor wafers and microelectronics substrates |
| JP3039483B2 (ja) | 1997-10-16 | 2000-05-08 | 日本電気株式会社 | 半導体基板の処理薬液及び半導体基板の薬液処理方法 |
| JP3216125B2 (ja) * | 1999-01-12 | 2001-10-09 | 日本電気株式会社 | 薬液処理方法および薬液処理装置 |
| JP3201601B2 (ja) * | 1999-01-13 | 2001-08-27 | 日本電気株式会社 | 半導体基板の洗浄方法 |
| JP2003194732A (ja) * | 2001-12-27 | 2003-07-09 | Shin Etsu Handotai Co Ltd | Ｓｏｉウエーハの評価方法 |
| JP4694782B2 (ja) * | 2002-12-02 | 2011-06-08 | 財団法人国際科学振興財団 | 半導体装置、その製造方法、及び、半導体表面の処理方法 |
| JP2008194638A (ja) * | 2007-02-14 | 2008-08-28 | Schott Lithotec Usa Corp | マスク及びマスクブランク用の新規な洗浄方法 |
| WO2010118206A2 (en) | 2009-04-08 | 2010-10-14 | Sunsonix | Process and apparatus for removal of contaminating material from substrates |
| JP5671793B2 (ja) | 2009-10-08 | 2015-02-18 | 株式会社Sumco | 仕上研磨を施したシリコンウェーハの洗浄方法 |
| JP2012182201A (ja) * | 2011-02-28 | 2012-09-20 | Shin Etsu Chem Co Ltd | 半導体ウェーハの製造方法 |
| JP6206173B2 (ja) * | 2013-12-26 | 2017-10-04 | 信越半導体株式会社 | 半導体ウェーハの洗浄方法 |
-
2022
- 2022-07-20 KR KR1020247006740A patent/KR20240051142A/ko unknown
- 2022-07-20 WO PCT/JP2022/028175 patent/WO2023032497A1/ja active Application Filing
- 2022-07-20 CN CN202280059667.1A patent/CN117897798A/zh active Pending
- 2022-07-22 TW TW111127475A patent/TW202312266A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| TW202312266A (zh) | 2023-03-16 |
| WO2023032497A1 (ja) | 2023-03-09 |
| KR20240051142A (ko) | 2024-04-19 |
| JP2023038054A (ja) | 2023-03-16 |
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Legal Events
| Date | Code | Title | Description |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |