CN117396434A - 单晶球状硅纳米粒子 - Google Patents

单晶球状硅纳米粒子 Download PDF

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Publication number
CN117396434A
CN117396434A CN202280037575.3A CN202280037575A CN117396434A CN 117396434 A CN117396434 A CN 117396434A CN 202280037575 A CN202280037575 A CN 202280037575A CN 117396434 A CN117396434 A CN 117396434A
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CN
China
Prior art keywords
single crystal
silicon nanoparticles
spherical silicon
silicon
nanoparticles
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CN202280037575.3A
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English (en)
Chinese (zh)
Inventor
榎村真一
大川秀树
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M Technique Co Ltd
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M Technique Co Ltd
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Publication of CN117396434A publication Critical patent/CN117396434A/zh
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/023—Preparation by reduction of silica or free silica-containing material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/14—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions the crystallising materials being formed by chemical reactions in the solution
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/59—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/82—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by IR- or Raman-data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/30—Particle morphology extending in three dimensions
    • C01P2004/32—Spheres
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/45—Wavelength conversion means, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/80—Constructional details
    • H10H29/85—Packages
    • H10H29/851—Wavelength conversion means
    • H10H29/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H29/8512—Wavelength conversion materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN202280037575.3A 2022-05-12 2022-05-12 单晶球状硅纳米粒子 Pending CN117396434A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/020113 WO2023218617A1 (ja) 2022-05-12 2022-05-12 単結晶球状シリコンナノ粒子

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CN117396434A true CN117396434A (zh) 2024-01-12

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CN202280037575.3A Pending CN117396434A (zh) 2022-05-12 2022-05-12 单晶球状硅纳米粒子
CN202280035206.0A Active CN117396433B (zh) 2022-05-12 2022-05-19 单晶球状硅纳米粒子的制造方法

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Country Status (6)

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US (2) US20250333876A1 (https=)
EP (2) EP4524104A4 (https=)
JP (2) JPWO2023218617A1 (https=)
KR (2) KR102779630B1 (https=)
CN (2) CN117396434A (https=)
WO (2) WO2023218617A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102779630B1 (ko) * 2022-05-12 2025-03-12 엠. 테크닉 가부시키가이샤 단결정 구상 실리콘 나노 입자

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090047773A1 (en) * 2007-05-31 2009-02-19 The Administrators Of The Tulane Educational Fund Method of forming stable functionalized nanoparticles
JP2019156665A (ja) * 2018-03-09 2019-09-19 学校法人法政大学 シリコン量子ドットの製造方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1427873A1 (en) * 2001-09-19 2004-06-16 Evergreen Solar Inc. High yield method for preparing silicon nanocrystals with chemically accessible surfaces
US9402791B1 (en) * 2004-03-30 2016-08-02 James Beckman Ultra-violet radiation absorbing silicon particle nanoclusters
JP4504267B2 (ja) 2005-06-28 2010-07-14 株式会社東芝 半導体ナノ粒子の製造方法及び半導体材料の表面を被覆する方法
JP2009504423A (ja) * 2005-08-11 2009-02-05 イノヴァライト インコーポレイテッド 安定にパッシベートされたｉｖ族半導体ナノ粒子、並びにその製造方法及びその組成物
EP1760045A1 (en) * 2005-09-03 2007-03-07 Degussa GmbH Nanoscale silicon particles
JP2007197382A (ja) 2006-01-27 2007-08-09 Konica Minolta Medical & Graphic Inc 半導体ナノ粒子
EP2021279A2 (en) * 2006-04-13 2009-02-11 Cabot Corporation Production of silicon through a closed-loop process
CN101855713B (zh) 2007-08-09 2013-02-13 M技术株式会社 半导体微粒的制造方法及其微粒
JP5648986B2 (ja) 2007-11-02 2015-01-07 エム・テクニック株式会社 流体処理装置及び流体処理方法
CN101439859B (zh) * 2008-12-02 2011-08-03 浙江大学 一种绿色荧光纳米硅晶体
KR101053836B1 (ko) * 2009-02-10 2011-08-03 한국에너지기술연구원 Ｉｃｐ를 이용한 실리콘 나노입자 제조 장치
JP5598809B2 (ja) 2009-03-06 2014-10-01 独立行政法人物質・材料研究機構 発光素子
JP6057424B2 (ja) 2013-03-06 2017-01-11 学校法人東京電機大学 シリコンナノ粒子の製造方法
JP2015201621A (ja) * 2014-04-03 2015-11-12 国立研究開発法人物質・材料研究機構 発光性シリコンナノ粒子及び電流注入型発光素子
JP6520245B2 (ja) * 2015-03-12 2019-05-29 日本製鉄株式会社 シリコンナノ粒子発光体の製造方法およびそのシリコンナノ粒子発光体を用いた発光素子
JP6632052B2 (ja) * 2015-05-18 2020-01-15 国立大学法人群馬大学 発光シリコン粒子及び発光シリコン粒子の製造方法
KR102525331B1 (ko) * 2015-07-14 2023-04-25 엠. 테크닉 가부시키가이샤 산화물 입자의 제조 방법
JP6614651B2 (ja) 2015-10-23 2019-12-04 学校法人慶應義塾 シリコンナノ粒子の製造方法及び装置
CN107265462A (zh) * 2017-05-05 2017-10-20 北京大学 一种由四卤化硅制备纳米硅的方法
US20190071794A1 (en) * 2017-09-01 2019-03-07 Sri International Efficient solar grade silicon production system
KR102779630B1 (ko) * 2022-05-12 2025-03-12 엠. 테크닉 가부시키가이샤 단결정 구상 실리콘 나노 입자

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090047773A1 (en) * 2007-05-31 2009-02-19 The Administrators Of The Tulane Educational Fund Method of forming stable functionalized nanoparticles
JP2019156665A (ja) * 2018-03-09 2019-09-19 学校法人法政大学 シリコン量子ドットの製造方法

Also Published As

Publication number Publication date
EP4524104A1 (en) 2025-03-19
JPWO2023218617A1 (https=) 2023-11-16
CN117396433A (zh) 2024-01-12
WO2023218673A1 (ja) 2023-11-16
KR20230159458A (ko) 2023-11-21
EP4524104A4 (en) 2026-02-25
KR102756301B1 (ko) 2025-01-21
KR102779630B1 (ko) 2025-03-12
US20250333875A1 (en) 2025-10-30
CN117396433B (zh) 2026-04-10
US20250333876A1 (en) 2025-10-30
KR20230159459A (ko) 2023-11-21
EP4524095A1 (en) 2025-03-19
WO2023218617A1 (ja) 2023-11-16
JPWO2023218673A1 (https=) 2023-11-16

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