JPWO2023218673A1 - - Google Patents

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Publication number
JPWO2023218673A1
JPWO2023218673A1 JP2023545771A JP2023545771A JPWO2023218673A1 JP WO2023218673 A1 JPWO2023218673 A1 JP WO2023218673A1 JP 2023545771 A JP2023545771 A JP 2023545771A JP 2023545771 A JP2023545771 A JP 2023545771A JP WO2023218673 A1 JPWO2023218673 A1 JP WO2023218673A1
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2023545771A
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Japanese (ja)
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/023—Preparation by reduction of silica or free silica-containing material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/14—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions the crystallising materials being formed by chemical reactions in the solution
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/59—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/82—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by IR- or Raman-data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/30—Particle morphology extending in three dimensions
    • C01P2004/32—Spheres
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/45—Wavelength conversion means, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/80—Constructional details
    • H10H29/85—Packages
    • H10H29/851—Wavelength conversion means
    • H10H29/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H29/8512—Wavelength conversion materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2023545771A 2022-05-12 2022-05-19 Pending JPWO2023218673A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PCT/JP2022/020113 WO2023218617A1 (ja) 2022-05-12 2022-05-12 単結晶球状シリコンナノ粒子
PCT/JP2022/020825 WO2023218673A1 (ja) 2022-05-12 2022-05-19 単結晶球状シリコンナノ粒子の製造方法

Publications (1)

Publication Number Publication Date
JPWO2023218673A1 true JPWO2023218673A1 (https=) 2023-11-16

Family

ID=88729928

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2023545770A Pending JPWO2023218617A1 (https=) 2022-05-12 2022-05-12
JP2023545771A Pending JPWO2023218673A1 (https=) 2022-05-12 2022-05-19

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2023545770A Pending JPWO2023218617A1 (https=) 2022-05-12 2022-05-12

Country Status (6)

Country Link
US (2) US20250333876A1 (https=)
EP (2) EP4524104A4 (https=)
JP (2) JPWO2023218617A1 (https=)
KR (2) KR102779630B1 (https=)
CN (2) CN117396434A (https=)
WO (2) WO2023218617A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102779630B1 (ko) * 2022-05-12 2025-03-12 엠. 테크닉 가부시키가이샤 단결정 구상 실리콘 나노 입자

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005503984A (ja) * 2001-09-19 2005-02-10 エバーグリーン ソーラー， インコーポレイテッド 化学的に接近可能な表面を有するケイ素ナノクリスタルを調製するための高収率方法
JP2007012702A (ja) * 2005-06-28 2007-01-18 Toshiba Corp 半導体ナノ粒子の製造方法及び半導体材料の表面を半導体元素で被覆する方法、並びにそれらにより製造された半導体ナノ粒子、表面が被覆された半導体材料、及び発光素子
WO2009020188A1 (ja) * 2007-08-09 2009-02-12 M.Technique Co., Ltd. 半導体微粒子の製造方法及びその微粒子
CN101439859A (zh) * 2008-12-02 2009-05-27 浙江大学 一种绿色荧光纳米硅晶体
WO2023218617A1 (ja) * 2022-05-12 2023-11-16 エム・テクニック株式会社 単結晶球状シリコンナノ粒子

Family Cites Families (18)

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US9402791B1 (en) * 2004-03-30 2016-08-02 James Beckman Ultra-violet radiation absorbing silicon particle nanoclusters
JP2009504423A (ja) * 2005-08-11 2009-02-05 イノヴァライト インコーポレイテッド 安定にパッシベートされたｉｖ族半導体ナノ粒子、並びにその製造方法及びその組成物
EP1760045A1 (en) * 2005-09-03 2007-03-07 Degussa GmbH Nanoscale silicon particles
JP2007197382A (ja) 2006-01-27 2007-08-09 Konica Minolta Medical & Graphic Inc 半導体ナノ粒子
EP2021279A2 (en) * 2006-04-13 2009-02-11 Cabot Corporation Production of silicon through a closed-loop process
US7883995B2 (en) * 2007-05-31 2011-02-08 The Administrators Of The Tulane Educational Fund Method of forming stable functionalized nanoparticles
JP5648986B2 (ja) 2007-11-02 2015-01-07 エム・テクニック株式会社 流体処理装置及び流体処理方法
KR101053836B1 (ko) * 2009-02-10 2011-08-03 한국에너지기술연구원 Ｉｃｐ를 이용한 실리콘 나노입자 제조 장치
JP5598809B2 (ja) 2009-03-06 2014-10-01 独立行政法人物質・材料研究機構 発光素子
JP6057424B2 (ja) 2013-03-06 2017-01-11 学校法人東京電機大学 シリコンナノ粒子の製造方法
JP2015201621A (ja) * 2014-04-03 2015-11-12 国立研究開発法人物質・材料研究機構 発光性シリコンナノ粒子及び電流注入型発光素子
JP6520245B2 (ja) * 2015-03-12 2019-05-29 日本製鉄株式会社 シリコンナノ粒子発光体の製造方法およびそのシリコンナノ粒子発光体を用いた発光素子
JP6632052B2 (ja) * 2015-05-18 2020-01-15 国立大学法人群馬大学 発光シリコン粒子及び発光シリコン粒子の製造方法
KR102525331B1 (ko) * 2015-07-14 2023-04-25 엠. 테크닉 가부시키가이샤 산화물 입자의 제조 방법
JP6614651B2 (ja) 2015-10-23 2019-12-04 学校法人慶應義塾 シリコンナノ粒子の製造方法及び装置
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JP2005503984A (ja) * 2001-09-19 2005-02-10 エバーグリーン ソーラー， インコーポレイテッド 化学的に接近可能な表面を有するケイ素ナノクリスタルを調製するための高収率方法
JP2007012702A (ja) * 2005-06-28 2007-01-18 Toshiba Corp 半導体ナノ粒子の製造方法及び半導体材料の表面を半導体元素で被覆する方法、並びにそれらにより製造された半導体ナノ粒子、表面が被覆された半導体材料、及び発光素子
WO2009020188A1 (ja) * 2007-08-09 2009-02-12 M.Technique Co., Ltd. 半導体微粒子の製造方法及びその微粒子
CN101439859A (zh) * 2008-12-02 2009-05-27 浙江大学 一种绿色荧光纳米硅晶体
WO2023218617A1 (ja) * 2022-05-12 2023-11-16 エム・テクニック株式会社 単結晶球状シリコンナノ粒子

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Title
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BALDWIN, R. K. ET AL., CHEMICAL COMMUNICATIONS, vol. 2002, JPN6022028335, 22 July 2002 (2002-07-22), pages 1822 - 1823, ISSN: 0005797032 *
ZOU, JING ET AL.: ""Size and Spectroscopy of Silicon Nanoparticles Prepared via Reduction of SiCl4"", JOURNAL OF CLUSTER SCIENCE, vol. 17, no. 4, JPN6026005759, 28 November 2006 (2006-11-28), pages 565 - 578, ISSN: 0005797033 *

Also Published As

Publication number Publication date
EP4524104A1 (en) 2025-03-19
JPWO2023218617A1 (https=) 2023-11-16
CN117396433A (zh) 2024-01-12
WO2023218673A1 (ja) 2023-11-16
KR20230159458A (ko) 2023-11-21
EP4524104A4 (en) 2026-02-25
KR102756301B1 (ko) 2025-01-21
KR102779630B1 (ko) 2025-03-12
US20250333875A1 (en) 2025-10-30
CN117396433B (zh) 2026-04-10
CN117396434A (zh) 2024-01-12
US20250333876A1 (en) 2025-10-30
KR20230159459A (ko) 2023-11-21
EP4524095A1 (en) 2025-03-19
WO2023218617A1 (ja) 2023-11-16

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