WO2009020188A1 - 半導体微粒子の製造方法及びその微粒子 - Google Patents

半導体微粒子の製造方法及びその微粒子 Download PDF

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Publication number
WO2009020188A1
WO2009020188A1 PCT/JP2008/064246 JP2008064246W WO2009020188A1 WO 2009020188 A1 WO2009020188 A1 WO 2009020188A1 JP 2008064246 W JP2008064246 W JP 2008064246W WO 2009020188 A1 WO2009020188 A1 WO 2009020188A1
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fluid
fine particles
thin
semiconductor
semiconductor fine
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PCT/JP2008/064246
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English (en)
French (fr)
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Masakazu Enomura
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M.Technique Co., Ltd.
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Priority to CN2008801110410A priority Critical patent/CN101855713B/zh
Priority to KR1020107005163A priority patent/KR101378413B1/ko
Priority to JP2009526491A priority patent/JP4458202B2/ja
Priority to KR1020147001276A priority patent/KR101432093B1/ko
Priority to EP08827049.1A priority patent/EP2184772B1/en
Priority to US12/672,836 priority patent/US8841352B2/en
Publication of WO2009020188A1 publication Critical patent/WO2009020188A1/ja
Priority to US14/466,803 priority patent/US9337382B2/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0083—Processes for devices with an active region comprising only II-VI compounds
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F27/00—Mixers with rotary stirring devices in fixed receptacles; Kneaders
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F27/00—Mixers with rotary stirring devices in fixed receptacles; Kneaders
    • B01F27/27—Mixers with stator-rotor systems, e.g. with intermeshing teeth or cylinders or having orifices
    • B01F27/271—Mixers with stator-rotor systems, e.g. with intermeshing teeth or cylinders or having orifices with means for moving the materials to be mixed radially between the surfaces of the rotor and the stator
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G9/00—Compounds of zinc
    • C01G9/08—Sulfides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/28—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table
    • H01L33/285—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table characterised by the doping materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/40—Organosilicon compounds, e.g. TIPS pentacene
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F27/00—Mixers with rotary stirring devices in fixed receptacles; Kneaders
    • B01F27/27—Mixers with stator-rotor systems, e.g. with intermeshing teeth or cylinders or having orifices
    • B01F27/271—Mixers with stator-rotor systems, e.g. with intermeshing teeth or cylinders or having orifices with means for moving the materials to be mixed radially between the surfaces of the rotor and the stator
    • B01F27/2714—Mixers with stator-rotor systems, e.g. with intermeshing teeth or cylinders or having orifices with means for moving the materials to be mixed radially between the surfaces of the rotor and the stator the relative position of the stator and the rotor, gap in between or gap with the walls being adjustable
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y35/00—Methods or apparatus for measurement or analysis of nanostructures
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    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
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    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02617—Deposition types
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    • H01L21/02628—Liquid deposition using solutions
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    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S516/00—Colloid systems and wetting agents; subcombinations thereof; processes of
    • Y10S516/924—Significant dispersive or manipulative operation or step in making or stabilizing colloid system
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  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
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  • Inorganic Compounds Of Heavy Metals (AREA)

Abstract

　目的に応じて単分散の化合物半導体微粒子が作成出来、さらに自己排出性により生成物の詰まりも無く、大きな圧力を必要とせず、また生産性も高い、化合物半導体微粒子の製造方法を提供することを課題とするものであって、半導体原料を流体中において析出・沈殿させて化合物半導体微粒子を製造するに際して、上記の流体を、近接・離反可能に互いに対向して配設され、少なくとも一方が他方に対して回転する処理用面の間にできる薄膜流体とするものであり、当該薄膜流体中において半導体原料を析出・沈殿させる。また、半導体元素を含む化合物を流体中において還元剤と反応させて前記半導体元素を含む半導体微粒子を製造するに際して、上記の流体を、近接・離反可能に互いに対向して配設され、少なくとも一方が他方に対して回転する処理用面の間にできる薄膜流体とするものであり、当該薄膜流体中において上記半導体元素を含む化合物と還元剤とを反応させる。
PCT/JP2008/064246 2007-08-09 2008-08-07 半導体微粒子の製造方法及びその微粒子 WO2009020188A1 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
CN2008801110410A CN101855713B (zh) 2007-08-09 2008-08-07 半导体微粒的制造方法及其微粒
KR1020107005163A KR101378413B1 (ko) 2007-08-09 2008-08-07 반도체 미립자의 제조방법 및 그 미립자
JP2009526491A JP4458202B2 (ja) 2007-08-09 2008-08-07 半導体微粒子の製造方法
KR1020147001276A KR101432093B1 (ko) 2007-08-09 2008-08-07 반도체 미립자의 제조방법 및 그 미립자
EP08827049.1A EP2184772B1 (en) 2007-08-09 2008-08-07 Process for producing semiconductor fine particles and the fine particles
US12/672,836 US8841352B2 (en) 2007-08-09 2008-08-07 Method for producing semiconductor microparticles and the microparticles
US14/466,803 US9337382B2 (en) 2007-08-09 2014-08-22 Method for producing semiconductor microparticles and the microparticles

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-207426 2007-08-09
JP2007207426 2007-08-09
JP2008062315 2008-03-12
JP2008-062315 2008-03-12

Related Child Applications (2)

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US12/672,836 A-371-Of-International US8841352B2 (en) 2007-08-09 2008-08-07 Method for producing semiconductor microparticles and the microparticles
US14/466,803 Division US9337382B2 (en) 2007-08-09 2014-08-22 Method for producing semiconductor microparticles and the microparticles

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US (2) US8841352B2 (ja)
EP (2) EP2184772B1 (ja)
JP (1) JP4458202B2 (ja)
KR (2) KR101378413B1 (ja)
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Cited By (5)

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WO2011148463A1 (ja) 2010-05-25 2011-12-01 エム・テクニック株式会社 ドープ元素量を制御された析出物質の製造方法
JP4868558B1 (ja) * 2011-04-28 2012-02-01 エム・テクニック株式会社 酸化物・水酸化物の製造方法
JPWO2012165000A1 (ja) * 2011-05-28 2015-02-23 エム・テクニック株式会社 強制薄膜式流体処理装置を用いた処理物の付着防止方法
WO2023218673A1 (ja) * 2022-05-12 2023-11-16 エム・テクニック株式会社 単結晶球状シリコンナノ粒子の製造方法
KR20240053033A (ko) 2021-08-31 2024-04-23 디아이씨 가부시끼가이샤 발광 입자 및 발광 입자 함유 조성물의 제조 방법

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WO2009008393A1 (ja) * 2007-07-06 2009-01-15 M.Technique Co., Ltd. 強制超薄膜回転式処理法を用いたナノ粒子の製造方法
US8980958B2 (en) * 2007-11-09 2015-03-17 M. Technique Co., Ltd. Method for producing emulsion and thereby obtained emulsion
US8865055B2 (en) 2008-07-16 2014-10-21 Materials And Electrochemical Research (Mer) Corporation Production of sintered three-dimensional ceramic bodies
WO2010008596A1 (en) * 2008-07-16 2010-01-21 Materials And Electrochemical Research (Mer) Corporation Production of sintered three-dimensional ceramic bodies
EP2418015B1 (en) * 2008-11-25 2016-01-06 M. Technique Co., Ltd. Fluid treatment equipment and treatment method
US9481694B2 (en) * 2010-11-24 2016-11-01 M. Technique Co., Ltd. Solid solution pigment nanoparticles and method for producing solid solution pigment nanoparticles having controlled solid solution ratio
WO2012137628A1 (ja) * 2011-04-01 2012-10-11 エム・テクニック株式会社 バリウムチタニル塩及びチタン酸バリウムの製造方法
RU2014137149A (ru) * 2012-02-13 2016-04-10 Киова Кемикал Индастри Ко., Лтд. Тонкодисперсные частицы гидроксида магния
JP6014521B2 (ja) * 2013-03-11 2016-10-25 株式会社日立製作所 相変化メモリおよび半導体記録再生装置
WO2024180594A1 (ja) * 2023-02-27 2024-09-06 エム・テクニック株式会社 白金担持単結晶球状カーボンナノ粒子の製造方法

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TOYOKI KUNITAKE: "Handbook of nanomaterials", 25 February 2005, NTS INC.

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011148463A1 (ja) 2010-05-25 2011-12-01 エム・テクニック株式会社 ドープ元素量を制御された析出物質の製造方法
CN102905783A (zh) * 2010-05-25 2013-01-30 M技术株式会社 控制了掺杂元素量的析出物质的制造方法
CN102905783B (zh) * 2010-05-25 2016-04-27 M技术株式会社 控制了掺杂元素量的析出物质的制造方法
US9346685B2 (en) 2010-05-25 2016-05-24 M. Technique Co., Ltd. Method for producing substances to be separated having controlled amounts of dopant element
JP4868558B1 (ja) * 2011-04-28 2012-02-01 エム・テクニック株式会社 酸化物・水酸化物の製造方法
WO2012147209A1 (ja) * 2011-04-28 2012-11-01 エム・テクニック株式会社 酸化物・水酸化物の製造方法
US9127331B2 (en) 2011-04-28 2015-09-08 M. Technique Co., Ltd. Method for producing oxide/hydroxide
JPWO2012165000A1 (ja) * 2011-05-28 2015-02-23 エム・テクニック株式会社 強制薄膜式流体処理装置を用いた処理物の付着防止方法
KR20240053033A (ko) 2021-08-31 2024-04-23 디아이씨 가부시끼가이샤 발광 입자 및 발광 입자 함유 조성물의 제조 방법
WO2023218673A1 (ja) * 2022-05-12 2023-11-16 エム・テクニック株式会社 単結晶球状シリコンナノ粒子の製造方法
WO2023218617A1 (ja) * 2022-05-12 2023-11-16 エム・テクニック株式会社 単結晶球状シリコンナノ粒子

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CN101855713B (zh) 2013-02-13
EP2184772B1 (en) 2016-08-03
EP2184772A4 (en) 2012-12-26
KR20100053629A (ko) 2010-05-20
CN101855713A (zh) 2010-10-06
EP2184772A1 (en) 2010-05-12
US8841352B2 (en) 2014-09-23
KR20140013113A (ko) 2014-02-04
EP3106227A1 (en) 2016-12-21
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US20110042626A1 (en) 2011-02-24
US9337382B2 (en) 2016-05-10

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