CN117096040A - 半导体装置的制造方法 - Google Patents

半导体装置的制造方法 Download PDF

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Publication number
CN117096040A
CN117096040A CN202311062179.9A CN202311062179A CN117096040A CN 117096040 A CN117096040 A CN 117096040A CN 202311062179 A CN202311062179 A CN 202311062179A CN 117096040 A CN117096040 A CN 117096040A
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CN
China
Prior art keywords
light
layer
meth
curable resin
irradiated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202311062179.9A
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English (en)
Chinese (zh)
Inventor
赤须雄太
宫泽笑
川守崇司
祖父江省吾
大山恭之
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Resonac Corp
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Resonac Corp
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Filing date
Publication date
Application filed by Resonac Corp filed Critical Resonac Corp
Publication of CN117096040A publication Critical patent/CN117096040A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/019—Manufacture or treatment using temporary auxiliary substrates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6528—In-situ cleaning after layer formation, e.g. removing process residues
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6536—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7412—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/014—Manufacture or treatment using batch processing
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
    • C09J2301/416—Additional features of adhesives in the form of films or foils characterized by the presence of essential components use of irradiation
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/50—Additional features of adhesives in the form of films or foils characterized by process specific features
    • C09J2301/502—Additional features of adhesives in the form of films or foils characterized by process specific features process for debonding adherents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/35—Heat-activated
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7428—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to support diced chips prior to mounting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
    • H10P72/7442—Separation by peeling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Laminated Bodies (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Dicing (AREA)
  • Adhesive Tapes (AREA)
  • Recrystallisation Techniques (AREA)
CN202311062179.9A 2019-05-22 2020-05-20 半导体装置的制造方法 Pending CN117096040A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2019-096008 2019-05-22
JP2019096008 2019-05-22
CN202080036919.XA CN113840891B (zh) 2019-05-22 2020-05-20 半导体装置的制造方法
PCT/JP2020/019963 WO2020235597A1 (ja) 2019-05-22 2020-05-20 半導体装置を製造する方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN202080036919.XA Division CN113840891B (zh) 2019-05-22 2020-05-20 半导体装置的制造方法

Publications (1)

Publication Number Publication Date
CN117096040A true CN117096040A (zh) 2023-11-21

Family

ID=73458417

Family Applications (2)

Application Number Title Priority Date Filing Date
CN202311062179.9A Pending CN117096040A (zh) 2019-05-22 2020-05-20 半导体装置的制造方法
CN202080036919.XA Active CN113840891B (zh) 2019-05-22 2020-05-20 半导体装置的制造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN202080036919.XA Active CN113840891B (zh) 2019-05-22 2020-05-20 半导体装置的制造方法

Country Status (7)

Country Link
US (2) US12165882B2 (https=)
EP (1) EP3974491A4 (https=)
JP (2) JP7597025B2 (https=)
KR (1) KR102864887B1 (https=)
CN (2) CN117096040A (https=)
TW (2) TWI836077B (https=)
WO (1) WO2020235597A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019106846A1 (ja) * 2017-12-01 2019-06-06 日立化成株式会社 半導体装置の製造方法、仮固定材用樹脂組成物、及び仮固定材用積層フィルム
US11996384B2 (en) 2020-12-15 2024-05-28 Pulseforge, Inc. Method and apparatus for debonding temporarily bonded wafers in wafer-level packaging applications
DE102022114911A1 (de) * 2022-06-14 2023-12-14 Delo Industrie Klebstoffe Gmbh & Co. Kgaa Verfahren zum Herstellen von elektronischen Baugruppen und elektronische Baugruppe auf Wafer-Ebene

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6525493B2 (en) * 1998-08-26 2003-02-25 Q-Panel Lab Products Materials test chamber with xenon lamp radiation
JP2000260710A (ja) * 1999-03-11 2000-09-22 Seiko Epson Corp 半導体装置の製造方法及びアニール装置
US7094451B2 (en) * 1999-04-07 2006-08-22 Board Of Trustees Of Michigan State University Chemical functionalization of material surfaces using optical energy and chemicals
JP2003224117A (ja) * 2002-01-31 2003-08-08 Advanced Lcd Technologies Development Center Co Ltd 絶縁膜の製造装置
DE102004030268B4 (de) * 2003-06-24 2013-02-21 Fuji Electric Co., Ltd Verfahren zum Herstellen eines Halbleiterelements
US8486742B2 (en) * 2006-11-21 2013-07-16 Epistar Corporation Method for manufacturing high efficiency light-emitting diodes
JP5257314B2 (ja) * 2009-09-29 2013-08-07 大日本印刷株式会社 積層体、準備用支持体、積層体の製造方法、及びデバイスの製造方法
US8986497B2 (en) * 2009-12-07 2015-03-24 Ipg Photonics Corporation Laser lift off systems and methods
US20130087959A1 (en) * 2010-06-16 2013-04-11 3M Innovative Properties Company Opitcally tuned metalized light to heat conversion layer for wafer support system
JP4948629B2 (ja) 2010-07-20 2012-06-06 ウシオ電機株式会社 レーザリフトオフ方法
JP2012069919A (ja) * 2010-08-25 2012-04-05 Toshiba Corp 半導体装置の製造方法
JP2012069734A (ja) * 2010-09-24 2012-04-05 Toshiba Corp 半導体装置の製造方法
JP5789974B2 (ja) 2010-12-14 2015-10-07 住友ベークライト株式会社 仮固定剤および基材の加工方法
JP5861304B2 (ja) 2011-08-01 2016-02-16 Jsr株式会社 基材の処理方法、半導体装置および仮固定用組成物
JP2013145808A (ja) * 2012-01-13 2013-07-25 Sharp Corp 剥離方法、液晶ディスプレイの製造方法、有機ｅｌディスプレイの製造方法、およびタッチパネルの製造方法
JP5977532B2 (ja) 2012-02-20 2016-08-24 東京応化工業株式会社 支持体分離方法及び支持体分離装置
US20140231012A1 (en) * 2013-02-15 2014-08-21 Dainippon Screen Mfg, Co., Ltd. Substrate processing apparatus
JP6243616B2 (ja) * 2013-03-26 2017-12-06 キヤノン株式会社 露光装置および物品の製造方法
JP6050170B2 (ja) * 2013-03-27 2016-12-21 富士フイルム株式会社 半導体装置製造用仮接合用積層体、および、半導体装置の製造方法
CN106463473A (zh) * 2014-06-26 2017-02-22 凸版印刷株式会社 配线基板、半导体装置以及半导体装置的制造方法
JP2016048729A (ja) * 2014-08-27 2016-04-07 株式会社東芝 仮接着用支持基板及び半導体デバイスの製造方法
JP6437805B2 (ja) * 2014-12-03 2018-12-12 東京応化工業株式会社 積層体の製造方法、封止基板積層体の製造方法及び積層体
JP6404723B2 (ja) 2015-01-27 2018-10-17 デンカ株式会社 仮固定用接着剤組成物、それを用いた部材の仮固定方法及び硬化体残渣の除去方法
JP6718736B2 (ja) * 2015-05-22 2020-07-08 株式会社Ｓｃｒｅｅｎホールディングス 耐熱性有機高分子層の剥離方法およびフレキシブル配線板の製造方法
JP6517643B2 (ja) * 2015-09-16 2019-05-22 株式会社ジャパンディスプレイ 表示装置の製造方法、および、表示装置
JP6524972B2 (ja) * 2015-09-28 2019-06-05 Jsr株式会社 対象物の処理方法、仮固定用組成物、半導体装置及びその製造方法
JP6463664B2 (ja) * 2015-11-27 2019-02-06 信越化学工業株式会社 ウエハ加工体及びウエハ加工方法
JP6649111B2 (ja) * 2016-02-16 2020-02-19 東京応化工業株式会社 積層体、積層体の製造方法、及び基板の処理方法
EP3469635B1 (de) * 2017-01-26 2020-09-09 Gross, Leander Kilian Verfahren und vorrichtung zum trennen verschiedener materialschichten eines verbundbauteils
JP6387208B1 (ja) * 2017-10-26 2018-09-05 堺ディスプレイプロダクト株式会社 フレキシブルｏｌｅｄデバイスの製造方法および製造装置
WO2019106846A1 (ja) * 2017-12-01 2019-06-06 日立化成株式会社 半導体装置の製造方法、仮固定材用樹脂組成物、及び仮固定材用積層フィルム
US10505079B2 (en) * 2018-05-09 2019-12-10 X-Celeprint Limited Flexible devices and methods using laser lift-off

Also Published As

Publication number Publication date
KR102864887B1 (ko) 2025-09-25
US20220319872A1 (en) 2022-10-06
WO2020235597A1 (ja) 2020-11-26
EP3974491A1 (en) 2022-03-30
KR20220012877A (ko) 2022-02-04
JPWO2020235597A1 (https=) 2020-11-26
JP2025032136A (ja) 2025-03-11
TWI836077B (zh) 2024-03-21
US12165882B2 (en) 2024-12-10
EP3974491A4 (en) 2022-07-27
JP7597025B2 (ja) 2024-12-10
US20250046626A1 (en) 2025-02-06
TW202422724A (zh) 2024-06-01
CN113840891A (zh) 2021-12-24
CN113840891B (zh) 2023-08-29
TWI879437B (zh) 2025-04-01
TW202046421A (zh) 2020-12-16

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