CN116982159A - 场效应晶体管 - Google Patents

场效应晶体管 Download PDF

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Publication number
CN116982159A
CN116982159A CN202180095443.1A CN202180095443A CN116982159A CN 116982159 A CN116982159 A CN 116982159A CN 202180095443 A CN202180095443 A CN 202180095443A CN 116982159 A CN116982159 A CN 116982159A
Authority
CN
China
Prior art keywords
layer
type deep
type
trench
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180095443.1A
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English (en)
Chinese (zh)
Inventor
高谷秀史
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Publication of CN116982159A publication Critical patent/CN116982159A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H10D62/051—Forming charge compensation regions, e.g. superjunctions
    • H10D62/052—Forming charge compensation regions, e.g. superjunctions by forming stacked epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H10D62/111—Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H10P30/2042—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors into crystalline silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
CN202180095443.1A 2021-03-11 2021-10-08 场效应晶体管 Pending CN116982159A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021039306A JP7517206B2 (ja) 2021-03-11 2021-03-11 電界効果トランジスタ
JP2021-039306 2021-03-11
PCT/JP2021/037475 WO2022190445A1 (ja) 2021-03-11 2021-10-08 電界効果トランジスタ

Publications (1)

Publication Number Publication Date
CN116982159A true CN116982159A (zh) 2023-10-31

Family

ID=83227727

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180095443.1A Pending CN116982159A (zh) 2021-03-11 2021-10-08 场效应晶体管

Country Status (5)

Country Link
US (1) US20230361171A1 (https=)
EP (1) EP4307381A4 (https=)
JP (3) JP7517206B2 (https=)
CN (1) CN116982159A (https=)
WO (1) WO2022190445A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025190499A1 (en) * 2024-03-15 2025-09-18 Hitachi Energy Ltd Unit cell of a multi-trench semiconductor device and semiconductor device

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4166627B2 (ja) * 2003-05-30 2008-10-15 株式会社デンソー 半導体装置
JP4194890B2 (ja) 2003-06-24 2008-12-10 株式会社豊田中央研究所 半導体装置とその製造方法
JP5369372B2 (ja) 2005-11-28 2013-12-18 富士電機株式会社 半導体装置および半導体装置の製造方法
JP5201307B2 (ja) 2005-12-22 2013-06-05 富士電機株式会社 半導体装置
US7507631B2 (en) 2006-07-06 2009-03-24 International Business Machines Corporation Epitaxial filled deep trench structures
JP4539680B2 (ja) 2007-05-14 2010-09-08 株式会社デンソー 半導体装置およびその製造方法
JP4793390B2 (ja) 2008-02-13 2011-10-12 株式会社デンソー 炭化珪素半導体装置およびその製造方法
US7943989B2 (en) * 2008-12-31 2011-05-17 Alpha And Omega Semiconductor Incorporated Nano-tube MOSFET technology and devices
JP5531787B2 (ja) 2010-05-31 2014-06-25 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP5728992B2 (ja) 2011-02-11 2015-06-03 株式会社デンソー 炭化珪素半導体装置およびその製造方法
US9515137B2 (en) * 2013-02-21 2016-12-06 Infineon Technologies Austria Ag Super junction semiconductor device with a nominal breakdown voltage in a cell area
JP6048317B2 (ja) 2013-06-05 2016-12-21 株式会社デンソー 炭化珪素半導体装置
JP2015072999A (ja) 2013-10-02 2015-04-16 株式会社デンソー 炭化珪素半導体装置
JP6409681B2 (ja) 2015-05-29 2018-10-24 株式会社デンソー 半導体装置およびその製造方法
JP6729523B2 (ja) * 2017-08-31 2020-07-22 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP6740986B2 (ja) * 2017-08-31 2020-08-19 株式会社デンソー 炭化珪素半導体装置およびその製造方法
WO2020110514A1 (ja) 2018-11-29 2020-06-04 富士電機株式会社 超接合炭化珪素半導体装置および超接合炭化珪素半導体装置の製造方法
JP7180402B2 (ja) 2019-01-21 2022-11-30 株式会社デンソー 半導体装置
JP7505217B2 (ja) 2019-05-15 2024-06-25 富士電機株式会社 超接合半導体装置および超接合半導体装置の製造方法
JP7439417B2 (ja) 2019-09-03 2024-02-28 富士電機株式会社 超接合半導体装置および超接合半導体装置の製造方法

Also Published As

Publication number Publication date
US20230361171A1 (en) 2023-11-09
JP2025159185A (ja) 2025-10-17
EP4307381A1 (en) 2024-01-17
JP2022139078A (ja) 2022-09-26
WO2022190445A1 (ja) 2022-09-15
JP7517206B2 (ja) 2024-07-17
JP2024107477A (ja) 2024-08-08
EP4307381A4 (en) 2024-09-04
JP7736123B2 (ja) 2025-09-09

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